Electric field effects on the linear and nonlinear intersubband optical properties of double semi-parabolic quantum wells

In this work, the effects of the electric field on the optical properties of the symmetric and asymmetric double semi-parabolic quantum wells (DSPQWs) are investigated numerically for typical GaAs/Al_xGa_1−xAs. Optical properties are obtained using the compact density matrix approach. Our calculations for the asymmetric DSPQW show that the resonant peak values of the total refractive index change and total optical absorption coefficient are maximum for a certain value of the applied electric field, due to the anti-crossing effect. However, for the symmetric DSPQW, the resonant peak values of these optical properties decrease monotonically with increasing the applied electric field. Also, our results indicate that a larger value of the optical rectification coefficient of the symmetric DSPQW can be induced by applying a small electric field.     

Linear and nonlinear intersubband optical absorption and refractive index changes of asymmetric double semi-parabolic quantum wells

The optical properties of the asymmetric double semi-parabolic quantum wells (DSPQWs) are investigated numerically for typical GaAs/Al_xGa_1−xAs. Optical properties are obtained using the compact density matrix approach. In this work, effects of the structure parameters such as the barrier width and the well widths on the optical properties of the asymmetric DSPQWs are investigated. The results show that the linear and nonlinear optical properties of asymmetric DSPQW are non-monotonic functions of these structure parameters. The behavior of the refractive index changes of asymmetric DSPQW with the variation of the barrier width is different substantially with that of symmetric DSPQW. Results reveal that the resonant peak values of the total absorption coefficient of asymmetric DSPQW is usually greater than that of symmetric DSPQW. Our calculations also show that the total absorption coefficient of asymmetric DSPQW is larger than that of asymmetric double square quantum well.     

Effect of position-dependent effective mass on linear and nonlinear optical properties of a cubic quantum dot

In this paper, we first obtain an analytic relation for studying the position-dependent effective mass in a GaAs/Al_xGa_1−xAs cubic quantum dot. Then, the effect of position-dependent effective mass on the intersubband optical absorption coefficient and the refractive index change in the quantum dot are studied. Our numerical calculations are performed using both a constant effective mass and the position-dependent effective mass. We calculate the linear, nonlinear and total intersubband absorption coefficient and refractive index change as a function of the incident optical intensity and structural parameters such as dot length. The results obtained from the present work show that spatially varying electron effective mass plays an important role in the intersubband optical absorption coefficient and refractive index change in a cubic quantum dot.     

The correlation energies and nonlinear optical absorptions of an exciton in a disc-like quantum dot

Using exact diagonalization techniques, the low-lying states of an exciton, and the linear and nonlinear optical absorptions in a disc-like quantum dot are theoretically studied. The numerical results for the typical GaAs material show the so-called quantum size effect. Also, our study is restricted on the transition between the S state (L = 0) and the P state (L = 1). The optical absorption coefficients are greatly enhanced because of the induced size confinement. Meantime, we find that the total optical absorption coefficient is about two times bigger than that obtained by without considering exciton effects. Additionally, the optical absorption saturation intensity can be controlled by the incident optical intensity I.     

Linear and nonlinear optical absorption coefficients and binding energy of a spherical quantum dot

The binding energy and wavefunctions of the 1s, 1p, 1d and 1f energy states of a spherical quantum dot (QD) with parabolic potential were calculated by using a method which is a combination of the quantum genetic algorithm (QGA) and the Hartree–Fock–Roothaan (HFR) approach. In addition, the linear and the third-order nonlinear optical absorption coefficients based on optical transitions in QDs with and without impurity were calculated. The results show that the parabolic potential has a great effect not only on the binding energies and but also on the optical absorption coefficients. Moreover, the calculated results also reveal that the linear and nonlinear optical absorption coefficients are strongly affected by the existence of impurity and the incident optical intensity.     

Third-order nonlinear optical properties of excitonic state in a semiconductor quantum dot

By considering usual matrix procedures we examine how the exciton affects the nonlinear optical properties of 3-D semiconductor GaAs quantum dot. We calculate the third-order optical susceptibility of the GaAs (well) Al_xGaAs_1?x (barrier), and consequently the refractive index and the absorption coefficient. By increasing the Al content (x) in barrier material, carrier relaxation time is enhanced and the susceptibility peaks and their positions showed a blue shift, which agrees with the existing experimental work. For an anisotropic QD, the third-order nonlinear absorption coefficient depends strongly on the quantum dot width.     

Intersubband resonant enhancement of the nonlinear optical properties in asymmetric (CdS/ZnSe) based quantum wells

In this work, the linear and nonlinear optical properties are studied theoretically in asymmetric (CdS/ZnSe/BeTe)/(ZnSe/BeTe) quantum wells. The electronic states are calculated using the envelope wave function approximation and the intersubband transition energies are studied as a function of CdS and ZnSe well thicknesses as well as doping concentration. The optimum parameters carrying out the transition energy 0.8 eV (1.55 μm wavelength) are given. Results are presented for the linear, the third order nonlinear optical absorption and the refractive index changes in the studied heterostructure. Results show that the changes in the linear and the third order nonlinear optical absorption as well as refractive index change are as important as the temperature is high, the nonlinear terms must be taken into consideration especially near the resonance.     

Electronic structure and optical properties of zinc-blende GaN quantum dots

The energy levels of zinc-blende GaN quantum dots (QDs) are studied within the framework of the effective-mass envelope-function approximation. The dependence of the energy of electron and hole states on the quantum dot (QD) size is presented. The selection rules for optical transitions are given and the oscillator strengths of the dipole-allowed transitions for various QD radii are calculated with the wavefunctions of quantized energy levels. The theoretical absorption spectrum of GaN QDs is in good agreement with the existing experimental result.     

Linear and nonlinear intersubband optical absorption in a disk-shaped quantum dot with a parabolic potential plus an inverse squared potential in a static magnetic field

The linear and nonlinear optical absorption in a disk-shaped quantum dot (DSQD) with parabolic potential plus an inverse squared potential in the presence of a static magnetic field are theoretically investigated within the framework of the compact-density-matrix approach and iterative method. The energy levels and the wave functions of an electron in the DSQD are obtained by using the effective mass approximation. Numerical calculations are presented for typical GaAs/AlAs DSQD. It is found that the optical absorption coefficients are strongly affected not only by a static magnetic field, but also by the strength of external field, the confinement frequency and the incident optical intensity.     

Linear and nonlinear optical properties in a disk-shaped quantum dot with a parabolic potential plus a hyperbolic potential in a static magnetic field

Linear and nonlinear optical properties in a disk-shaped quantum dot (DSQD) with a parabolic potential plus a hyperbolic potential in a static magnetic field are theoretically investigated within the framework of the compact-density-matrix approach and iterative method. The energy levels and the wave functions of an electron are obtained by three kinds of approximation methods. It is found that optical absorption coefficients and refractive index changes are not only by the characteristic parameters of the hyperbolic potential and the confinement frequency, but also by the magnetic field.     

CdSe/HgSe/CdSe量子点量子阱(QDQW)晶粒的光学性质和电子结构

以CdSe纳米晶体为核,用胶体化学的方法,通过化学替代反应,获得了不同阱层或不同垒层的CdSeHgSeCdSe量子点量子阱(QDQW)晶体.紫外可见光吸收谱研究表明,通过调节QDQW中间HgSe阱层的厚度从0.9nm至0,可以调节QDQW颗粒的带隙从1.8变化至2.1eV,实现QDQW纳米晶体的剪裁.光致荧光(PL)谱研究显示,QDQW形成后,CdSeHgSe纳米颗粒表面态得到钝化,显现出发光强度加强的带边荧光峰.利用有效质量近似模型,对QDQW晶粒内部电子的1s—1s态进行了估算,估算结果总体趋势与实验数据相符 关键词： 量子点量子阱晶体 能带剪裁 加强的带边荧光峰     

Effect of laser radiation on optical properties of disk shaped quantum dot in magnetic fields

The optical absorption coefficients and changes in the refractive index in GaAs/AlGaAs, disk shaped quantum dots (DSQD) with simultaneously applied laser and magnetic field are studied in detail. The use of the density matrix formalism is made to study the variations in linear and non-linear polarizability with the frequency of the electric field. It is found that the absorption coefficient and the refractive index changes depend not only on the optical wave but also on the strength of the static magnetic field.     

Photoluminescence and optical absorption properties of silicon quantum dots embedded in Si-rich silicon nitride matrices

Silicon nitride (SiN_x) films were prepared with a gas mixture of SiH₄ and NH₃ on Si wafers using the plasma-enhanced chemical vapor deposition (PECVD) method. High-resolution transmission electron microscopy and infrared absorption have been used to reveal the existence of the Si quantum dots (Si QDs) and to determine the chemical composition of the silicon nitride layers. The optical properties of these structures were studied by photoluminescence (PL) spectroscopy and indicate that emission mechanisms are dominated by confined excitons within Si QDs. The peak position of PL could be controlled in the wavelength range from 1.5 to 2.2 eV by adjusting the flow rates of ammonia and silane gases. Absorbance spectra obtained in the transmission mode reveal optical absorption from Si QDs, which is in good correlation with PL properties. These results have implications for future nanomaterial deposition controlling and device applications.     

Effect of size and indium-composition on linear and nonlinear optical absorption of InGaN/GaN lens-shaped quantum dot

Based on the Schr ¨odinger equation for envelope function in the effective mass approximation, linear and nonlinear optical absorption coefficients in a multi-subband lens quantum dot are investigated. The effects of quantum dot size on the interband and intraband transitions energy are also analyzed. The finite element method is used to calculate the eigenvalues and eigenfunctions. Strain and In-mole-fraction effects are also studied, and the results reveal that with the decrease of the In-mole fraction, the amplitudes of linear and nonlinear absorption coefficients increase. The present computed results show that the absorption coefficients of transitions between the first excited states are stronger than those of the ground states. In addition, it has been found that the quantum dot size affects the amplitudes and peak positions of linear and nonlinear absorption coefficients while the incident optical intensity strongly affects the nonlinear absorption coefficients.     

不同盖层对InAs/GaAs量子点结构和光学性质的影响

利用金属有机化合物气相沉积设备生长了不同盖层结构的InAs/GaAs量子点,采用原子力显微镜和光致发光光谱仪对量子点的结构和光学性质进行了研究.量子点层之间的盖层由一个低温层和一个高温层组成.对不同材料结构的低温盖层的对比研究表明,In组分渐变的InGaAs低温盖层有利于改善量子点均匀性、减少结合岛数目、提高光致发光强度;当组分渐变InGaAs低温盖层厚度由6.8 nm增加到12 nm,发光波长从1256.0 nm红移到1314.4 nm.另外,还对不同材料结构的高温盖层进行了对比分析,发现高温盖层采用In组分渐变的InGaAs材料有利于光致发光谱强度的提高. 关键词： 半导体量子点 盖层 组分渐变     

Study of the structural and optical properties of GaN/AlN quantum dot superlattices

We study GaN/AlN Quantum Dot (QD) superlattices utilizing the STREL environment which allows the building of atomistic models, relaxation of the structures, the calculation of the electronic states and optical transitions and the visualization of the results. The forces are calculated using an appropriate Keating or Stillinger–Weber interatomic potential model and the electronic states and optical transitions using a tight-binding formulation which is economical and produces realistic electronic properties. The relaxed structure has strains mainly in the GaN region which are compressive and small tensile strains in the AlN region, mainly below the QD. In the calculation of the electronic states and of the optical transitions the strains are included realistically at the atomistic level. The study of the wavefunctions close to the fundamental gap show how these strains influence the form and spatial extent of the wavefunction. Very close to the fundamental gap the valence and some conduction states are confined in the QD and have considerable oscillator strength.     

Effects of external electric and magnetic fields on the linear and nonlinear intersubband optical properties of finite semi-parabolic quantum dots

In this work, influences of external electric and magnetic fields on the optical rectification coefficient, the linear and the third-order nonlinear optical absorption coefficients as well as refractive index changes of finite semi-parabolic quantum dots are investigated. In this regard, energy eigenvalues and eigenfunctions of the system are calculated numerically, and optical properties are obtained using the compact density matrix approach. The results show that external electric and magnetic fields have a great influence on these optical quantities.     

Electric field and impurity effects on optical property of a three-dimensional quantum dot: A combinational potential scheme

The present study seeks to scrutinize the optical properties of an ellipsoidal quantum dot (EQD) containing an electron in the presence of an external electric field and a donor (acceptor) impurity. In this regard, the perturbation theory is used and for different values of the confinement strength and the electric field, the linear, nonlinear and total absorption coefficients are calculated as functions of the incident photon energy. The oscillator strength between the ground and first excited states in the EQD is also calculated in terms of the confinement strength. The results show that the optical properties of an EQD decrease with increases in the ellipticity constant and electric field.     

Linear and nonlinear intersubband optical absorption coefficients and refractive index changes with the ring-shaped non-spherical oscillator potential

Linear and nonlinear intersubband optical absorption coefficients and refractive index changes with the ring-shaped non-spherical oscillator potential (RNOP) are theoretically investigated within the framework of the compact-density-matrix approach and iterative method. The energy levels and the wave functions of an electron in the RNOP are obtained by using the effective mass approximation. It is found that the optical absorption coefficients and refractive index changes are strongly affected not only by the dimensionless parameters γ$\gamma$ and β$\beta$, but also by the confinement frequency _ω0${\omega }_0$.