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1.
Natural rubber (NR) grafted with 30 wt% poly (methyl methacrylate) (PMMA) and designated as MG30 has been added with varying amounts of LiCF3SO3. X-ray diffraction (XRD) shows the samples to be amorphous. Fourier transform infrared (FTIR) spectroscopy indicates complexation between the cation of the salt and the oxygen atom of the CO and –COO- groups of MG30. From electrochemical impedance spectroscopy (EIS), MG30 with 30 wt% LiCF3SO3 salt exhibits the highest ambient conductivity of 1.69×10−6 S cm−1 and lowest activation energy of 0.24 eV. The dielectric behavior has been analyzed using dielectric permittivity (ε′), dissipation factor (tan δ) and dielectric modulus (M?) of the samples. The dielectric constant of pure MG30 has been estimated to be ∼1.86.  相似文献   

2.
A single phase rare earth double perovskite oxide Ba2CeNbO6 (BCN) is synthesized by solid-state reaction technique for the first time. The X-ray diffraction pattern of the sample at room temperature shows monoclinic structure, with the lattice parameters, a=5.9763 Å, b=5.975 Å and c=8.48 Å and β=90.04°. Impedance spectroscopy is used to study the ac electrical behavior of this material as a function of frequency (102-106 Hz) at various temperatures (30-450 °C). A relaxation is observed in the entire temperature range. Conduction mechanism is investigated by fitting the complex impedance data to Cole-Cole equation. Complex impedance plane plots show only one semicircular arc, indicating only the grain contribution of dielectric relaxation. The scaling behavior of imaginary part of electric modulus (M″) and imaginary part of electrical impedance (Z″) suggests that the relaxation describes the same mechanism at various temperatures. The frequency dependence of conductivity is interpreted in terms of the jump relaxation model and is fitted to Jonscher's power law. The values of dc conductivities extracted from the Jonscher power law varies from 2.79×10−7 to 3.5×10−5 Sm−1 with the increase in temperature from 100 to 450 °C. The activation energies (0.37 eV) extracted from M″(ω) and Z″(ω) peaks are found to follow the Arrhenius law.  相似文献   

3.
The study of coupled substitution of In3+ by Sn4+/M2+ species in In2O3 has allowed In2−2xSnxMxO3 solid solutions with bixbyite structure to be synthesized for M=Ni, Mg, Zn, Cu and Ca. The latter exhibit a rather broad homogeneity range and are characterized by an ordered cationic distribution. More importantly, these novel oxides are transparent conductors, and among them the Zn and Cu phases show a great potential, since one observes a semi-metallic behavior with conductivity up to 3×102 and 3×103 (Ω cm)−1, respectively, to be compared to 2×103 (Ω cm)−1 for reduced ITO. Moreover, in contrast to the latter no reducing conditions are required for reaching such performances.  相似文献   

4.
The electrical properties of elastic alternating propylene-carbon monoxide copolymer (PCO-200) were investigated using the impedance spectroscopy technique. The results revealed a phase transition at about 70 °C where the material transforms from its insulating phase of conductivity in the order of 6×10−9 to about 9×10−5 (Ω m)−1, The second phase is characterized by temperature dependent electrical relaxation phenomena. The plot of the complex electric modulus and the complex impedance yields semicircles in the temperature range 70 up to 110 °C and a decreasing radius with increasing temperature. The activation energy was found to be in the order of 0.8 eV.  相似文献   

5.
Photoluminescence of Eu(TTA)3DPBT (TTA=thenoyltrifluoro-acetonate DPBT=2-(N,N-diethylanilin-4-yl)-4,6-bis(3,5-dimethylpyrazol-1-yl)-1,3,5-triazine) in toluene and PMMA thin film are measured with excitation at 350 and 404 nm, respectively, and analyzed using Judd-Ofelt theory. Under excitation at 350 nm, it is found that Eu(TTA)3DPBT in toluene has a larger Ω2 value (14.33×10−20 cm2) than that (12.70×10−20 cm2) of Eu(TTA)3Phen (Phen=1,10-phenanthroline) in the same solvent, and has a smaller Ω2 value (12.70×10−20 cm2) in PMMA than that (Ω2=14.09×10−20 cm2) of Eu(TTA)3Phen in PMMA. At the same time, it can be seen that under excitation at 350 nm Ω2 value of Eu(TTA)3DPBT in toluene is larger than that in PMMA. Excited by 404 nm, Ω2 of Eu(TTA)3DPBT obtained in toluene and in PMMA are the same as that excited at 350 nm. The transition probability (A), emission cross-section (σ) and the fluorescence branching ratio (β) are also evaluated. The lifetime of 5D0 metastable state is measured on 350 and 404 nm excitation, respectively. For the former situation, it is 455 μs in toluene and 640 μs in PMMA, for the latter it is 460 μs in toluene and 664 μs in PMMA. By comparing absorptions with excitations, it can be found that DPBT is more efficient than TTA as an energy donor. Phosphorescence spectra are also measured to estimate the lowest triplet level and analyze the energy transfer for DPBT and TTA, from which it is found that the energy transfer from TTA to DPBT occurs in the luminescent process.  相似文献   

6.
Copper substituted bismuth vanadate films have been successfully deposited first time by spray pyrolysis technique on glass substrates suitable for low temperature solid oxide fuel cells. Desired phase formation of polycrystalline Bi2V0.9Cu0.1O5.35 (BICUVOX.10) was confirmed by X-ray diffraction technique. These films were further studied with EDAX and SEM techniques for their compositional and morphological characterization. Electrical conductivity of BICUVOX.10 is found to be 5.7 × 10−2 (Ω cm)−1 at 698 K, predicts the onset temperature for ionic contribution suitable for low temperature SOFC applications. Room temperature complex impedance plot reveals that electrical process arises due to contribution from the grain interior.  相似文献   

7.
The effects of surface preparation and illumination on electric parameters of Au/InSb/InP(100) Schottky diode were investigated, in the later diode InSb forms a fine restructuration layer allowing to block In atoms migration to surface. In order to study the electric characteristics under illumination, we make use of an He-Ne laser of 1 mW power and 632.8 nm wavelength. The current-voltage I(VG), the capacitance-voltage C(VG) measurements were plotted and analysed. The saturation current Is, the serial resistance Rs and the mean ideality factor n are, respectively, equal to 2.03 × 10−5 A, 85 Ω, 1.7 under dark and to 3.97 × 10−5 A, 67 Ω, 1.59 under illumination. The analysis of I(VG) and C(VG) characteristics allows us to determine the mean interfacial state density Nss and the transmission coefficient θn equal, respectively, to 4.33 × 1012 eV−1 cm−2, 4.08 × 10−3 under dark and 3.79 × 1012 eV−1 cm−2 and 5.65 × 10−3 under illumination. The deep discrete donor levels presence in the semiconductor bulk under dark and under illumination are responsible for the non-linearity of the C−2(VG) characteristic.  相似文献   

8.
The crystal structure, the 13C NMR spectroscopy and the complex impedance have been carried out on [Cd3(SCN)2Br6(C2H9N2)2]n. Crystal structure shows a 2D polymeric network built up of two crystallographically independent cadmium atoms with two different octahedral coordinations. This compound exhibits a phase transition at (T=355±2 K) which has been characterized by differential scanning calorimetry (DSC), X-rays powder diffraction, AC conductivity and dielectric measurements. Examination of 13C CP/MAS line shapes shows indirect spin–spin coupling (14N and 13C) with a dipolar coupling constant of 1339 Hz. The AC conductivity of this compound has been carried out in the temperature range 325–376 K and the frequency range from 10−2 Hz to 10 MHz. The impedance data were well fitted to two equivalent electrical circuits. The results of the modulus study reveal the presence of two distinct relaxation processes. One, at low frequency side, is thermally activated due to the ionic conduction of the crystal and the other, at higher frequency side, gradually disappears when temperature reaches 355 K which is attributed to the localized dipoles in the crystal. Moreover, the temperature dependence of DC-conductivity in both phases follows the Arrhenius law and the frequency dependence of σ(ω,T) follows Jonscher's universal law. The near values of activation energies obtained from the conductivity data and impedance confirm that the transport is through the ion hopping mechanism.  相似文献   

9.
Laser-induced fluorescence spectra have been obtained at low resolution using a laser ablation source and pulsed dye laser, and at high resolution using a Broida oven and cw ring dye laser. Dispersed fluorescence spectra from two different excited states, A[16.4]8.5 and B[15.4]Ω (unknown Ω) (the states are labelled [10−3T0]Ω according to their energy and Ω assignment) showed transitions to the same four low lying electronic states, X7.5, Y[0.15]8.5, Z[0.85]7.5, and an unassigned state at 970 cm−1. High resolution excitation spectra of the A-X 0-0, A-Y 0-0 and 0-1, and A-Z 0-0 and 0-1 transitions were obtained and a global fit to all the data yielded rotational constants for both 162Dy35Cl and 164Dy35Cl. From the band origins, vibrational frequencies of 291 and 284 cm−1 were obtained for the Y[0.15]8.5 and Z[0.85]7.5 states, respectively, suggesting that these two states originate from the Dy+(4f106s)Cl configuration. The 162Dy-164Dy and 35Cl-37Cl isotope effects were studied and both indicated a ground state, X7.5, vibrational frequency of ∼230 cm−1 which was reinforced by the observation, in dispersed fluorescence from the B[15.4] state, of a weak transition to a state 233 cm−1 above the ground state. The observed electronic states and their configurational origin are discussed in terms of ligand field theory predictions.  相似文献   

10.
Laser induced fluorescence spectra of HoS have been obtained using a Broida oven and a ring dye laser. Dispersed fluorescence spectra showed transitions from a common upper state, A[14.79]8.5 to the v = 0 and 1 vibrational levels of three low lying states, labelled X8.5, W[0.25]7.5 and V[0.98]7.5 (the states are labelled [10−3T0]Ω according to their energy and Ω assignment). High resolution excitation spectra were obtained for all six transitions and a rotational analysis yielded the following principal constants, in cm−1, for the X, W and V states, respectively: T0 = 0, 251.8713(31), 980.6969(37); Be = 0.121903(42), 0.121729(37), 0.122561(34); ΔG1/2 = 463.8811(46), 462.9411(45), 461.2084(127). For the A state, T0 = 14794.6987(28) cm−1 and B0 = 0.112596(29) cm−1. The three low lying states are shown to arise from the Ho2+[4f10(5I8)6s]S2− configuration in accord with Ligand Field Theory predictions. The atomic origin of each of the three low lying electronic states was determined from the observed resolved hyperfine structure.  相似文献   

11.
The [TMA]2Zn0.5Cu0.5Cl4 hybrid material was prepared and its dielectric spectra were measured in the 10−1 Hz-106 Hz frequency range and 200-305 K temperature interval. The dielectric permittivity showed a ferroelectric-paraelectric phase transition at 293 K. Double relaxation peaks are observed in the imaginary part of the electrical modulus, suggesting the presence of grain and grain boundary in the sample. The frequency dependent conductivity was interpreted in term of Jonscher's law: σ(ω)=σdc+n. The temperature dependent of the dc conductivity (σdc) was well described by the Arrhenius equation: σdcT=σo×exp(−Ea/kT).  相似文献   

12.
Physical characterizations of 4-tricyanovinyl-N,N-diethylaniline, TCVA, have been reported. The differential scanning calorimetry measurements of TCVA showed that this compound is stable up to 423 K. The temperature dependence of electrical conductivity, in the temperature range from 298 to 403 K, was studied on pellet samples of TCVA with evaporated ohmic Au electrodes. The electrical conductivity was found to be 7.01×10−9 Ω−1 cm−1 at room temperature. The temperature dependence of the electrical conductivity is typical for semiconducting compounds. The current density-voltage (J-V) characteristics of TCVA pellet samples have been investigated at different temperatures. In low-voltage region, the conduction current obeys Ohm's law while the charge transport phenomenon appears to be space-charge-limited current in the higher voltage regions.  相似文献   

13.
Solid polymer electrolytes have attracted considerable attention due to their wide variety of electrochemical device applications. The present paper is focused on the effect of plasticizer to study the structural, electrical and dielectric properties of PVA-H3PO4 complex polymer electrolytes. XRD results show that the crystallinity decreases due to addition of plasticizer up to particular amount of polyethylene glycol (PEG) and thereafter it increases. Consequently, there is an enhancement in the amorphicity of the samples responsible for process of ion transport. This characteristic behavior can be verified by the analysis of the differential scanning calorimetry results. FTIR spectroscopy has been used to characterize the structure of polymer and confirms the complexation of plasticizer with host polymeric matrix. Electrical and dielectric properties have been studied for different wt% of plasticizer and their variations have been observed. The addition of PEG has significantly improved the ionic conductivity. The optimum ionic conductivity value of the plasticized polymer electrolyte film of 30 wt% PEG has been achieved to be of the order of 10−4 S cm−1 at room temperature and corresponding ionic transference number is 0.98. The minimum activation energy is found to be 0.25 eV for optimum conductivity condition.  相似文献   

14.
Layered misfit cobaltite Bi2Ca2.4Co2Oy has been synthesized by a sol-gel method. This compound exhibits large thermoelectric (TE) power (S300 K∼170 μV K−1), low resistivity (ρ300 K∼42 mΩ cm) and relatively small thermal conductivity (κ300 K∼2.8 W K−1 m−1) at room temperature. Furthermore, the resistivity of this compound displays a metallic behavior above T?∼150 K with a semiconducting behavior below this temperature. This abnormal behavior in resistivity is analogous to those observed in Sr and Ba based misfit cobaltites. The observed features of the TE have been discussed based on the narrow band model.  相似文献   

15.
Highly conducting and transparent aluminum-doped CdO thin films were deposited on quartz by ablating the sintered target of CdO containing 2 wt% of aluminum with a KrF excimer laser (λ = 248 nm and pulsed duration of 20 ns). The effect of oxygen partial pressure on structural, electrical, and optical properties was studied. It is observed that the (2 0 0) plane is highly preferred for the films grown under high oxygen pressure. The conductivity, carrier concentration and mobility of the films decrease with increase in the oxygen pressure after attaining maximum. Low resistivity (2.27 × 10−5 Ω cm), and high mobility (79 cm2 V−1 s−1) is observed for the film grown under oxygen pressure of 1.0 × 10−3 mbar. The optical band gap is found varying between 2.68 and 2.90 eV for various oxygen pressure.  相似文献   

16.
Impedance spectroscopy was utilized to investigate the dielectric properties, ac conductivity and charge transport mechanisms in propylene-alt-CO/ethylene-alt-CO (EPEC) random terpolymer filled with multi-walled carbon nanotubes (MWCNT) as a function of nanofiller content, frequency, and temperature. Equivalent resistor-capacitor (RC) circuit models were proposed to describe the impedance characteristics of the unfilled terpolymer and the nanocomposite at different temperatures. For the nanocomposites, the ac conductivity tended to be frequency independent at low frequencies. At high frequencies, the ac conductivity increased with frequency. The dc conductivity (i.e., plateau of the ac conductivity at low frequencies) at room temperature increased from 10?9 (Ω·m)?1 for the unfilled polymer to l0?3 (Ω·m)?1 for the 6 wt% MWCNT/EPEC nanocomposite. At low temperatures, the equivalent RC model for EPEC-0 and EPEC-2 was found to consist of a parallel RC circuit. However, for 6 wt% MWCNT/EPEC nanocomposite, an RC model consisting of an R/constant phase element (CPE) circuit and a resistor in series was required to describe the impedance behavior of the nanocomposite.  相似文献   

17.
M. Din 《Applied Surface Science》2006,252(15):5508-5511
Cadmium arsenide is a II-V semiconductor, exhibiting n-type intrinsic conductivity with high mobility and narrow bandgap. It is deposited by thermal evaporation, and has shown the Schottky and Poole-Frenkel effects at high electric fields, but requires further electrical characterisation. This has now been extended to low-field van der Pauw lateral resistivity measurements on films of thickness up to 1.5 μm. Resistivity was observed to decrease with increasing film thickness up to 0.5 μm from about 3 × 10−3 Ω m to 10−5 Ω m, where the crystalline granular size increases with film thickness. This decrease in resistivity was attributed to a decrease in grain boundary scattering and increased mobility. Substrate temperature during deposition also influenced the resistivity, which decreased from around 10−4 Ω m to (10−5 to 10−6) Ω m for an increase in substrate deposition temperature from 300 K to 423 K. This behaviour appears to result from varying grain sizes and ratios of crystalline to amorphous material. Resistivity decreased with deposition rate, reaching a minimum value at about 1.5 nm s−1, before slowly increasing again at higher rates. It was concluded that this resulted from a dependence of the film stoichiometry on deposition rate. The dependence of resistivity on temperature indicates that intercrystalline barriers dominate the conductivity at higher temperatures, with a hopping conduction process at low temperatures.  相似文献   

18.
The Ce6−xYxMoO15−δ solid solution with fluorite-related structure have been characterized by differential thermal analysis/thermogravimetry (DTA/TG), X-ray diffraction (XRD), IR, Raman, scanning electric microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) methods. The electric conductivity of samples is investigated by Ac impedance spectroscopy. An essentially pure oxide-ion conductivity of the oxygen-deficiency was observed in pure argon, oxygen and air. The highest oxygen-ion conductivity was found in Ce5.5Y0.5MoO15−δ ranging from 5.9×10−5 (S cm−1) at 300 °C to 1.3×10−2 (S cm−1) at 650 °C, respectively. The oxide-ion conductivities remained stable over 80 h-long test at 800 °C. These properties suggested that significant oxide-ionic conductivity exists in these materials at moderately elevated temperatures.  相似文献   

19.
The role of inorganic ceramic fillers namely nanosized Al2O3 (15-25 nm) and TiO2 (10-14 nm) and ferroelectric filler SrBi4Ti4O15 (SBT CIT) (0.5 μm) synthesized by citrate gel technique (CIT) on the ionic conductivity and electrochemical properties of polymer blend 15 wt% PMMA+PEO8:LiClO4+2 wt% EC/PC electrolytes were investigated. Enhancement in conductivity was obtained with a maximum of 0.72×10−5 S cm−1 at 21 °C for 2 wt% of SrBi4Ti4O15 (SBT CIT) composite polymer electrolyte. The lithium-ion transport number and the electrochemical stability of the composite polymer electrolytes at ambient temperature were analyzed. An enhancement in electrochemical stability was observed for polymer composites containing 2 wt% of SrBi4Ti4O15 (SBT CIT) as fillers.  相似文献   

20.
In this paper Mössbauer, Raman and dielectric spectroscopy studies of BiFeO3 (BFO) ceramic matrix with 3 or 10 wt% of Bi2O3 or PbO added, obtained through a new procedure based on the solid-state method, are presented. Mössbauer spectroscopy shows the presence of a single magnetically ordered phase with a hyperfine magnetic field of 50 T. Raman spectra of BFO over the frequency range of 100-900 cm−1 have been investigated, at room temperature, under the excitation of 632.8 nm wavelength in order to evaluate the effect of additives on the structure of the ceramic matrix. Detailed studies of the dielectric properties of BiFeO3 ceramic matrix like capacitance (C), dielectric permittivity (ε) and dielectric loss (tan δ), were investigated in a wide frequency range (1 Hz-1 MHz), and in a temperature range (303-373 K). The complex impedance spectroscopy (CIS) technique, showed that these properties are strongly dependent on frequency, temperature and on the added level of impurity. The temperature coefficient of capacitance (TCC) of the samples was also evaluated. The study of the imaginary impedance (−Z″) and imaginary electric modulus (M″) as functions of frequency and temperature leads to the measurement of the activation energy (Eac), which is directly linked to the relaxation process associated with the interfacial polarization effect in these samples.  相似文献   

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