Microstructure and microwave permeability of FeCo thin films with Co underlayer

Microstructure, static magnetic properties and microwave permeability of sputtered FeCo films were examined. Fe₆₀Co₄₀ films (100 nm in thickness) deposited on glass substrates exhibited in-plane isotropy and a large coercivity of 161.1 Oe. When same thickness films were deposited on 2.5 nm Co underlayer, well-defined in-plane anisotropy was formed with an anisotropy field of 65 Oe. The sample had a static initial permeability of about 285, maximum imaginary permeability of 1255 and ferromagnetic resonance frequency of 2.71 GHz. Cross-sectional TEM image revealed that the Co underlayer had induced a columnar grain structure with grain diameter of 10 nm in the FeCo films. In comparison, FeCo films without Co underlayer showed larger grains of 70 nm in diameter with fewer distinct vertical grain boundaries. In addition, the Co underlayer changed the preferred orientation of the FeCo from (1 0 0) to (1 1 0). The improvement in soft magnetic properties and microwave behavior originates from the modification of the film microstructure, which can be well understood by the random anisotropy theory.     

Theoretic 3-D study of the high-frequency magnetic moment dynamics in thin ferromagnetic films with in-plane uniaxial anisotropy by considering eddy-current generation

In the present paper, theoretic investigations of polarisation vector precession trajectories represented by a macro spin in ferromagnetic films with in-plane uniaxial anisotropy were realised. For this purpose, the Landau–Lifschitz–Gilbert differential equation (LLG) in combination with the Maxwell equations were solved for three dimensions by considering a linear progression of the magnetisation or polarisation with an external field. The frequency and time dependent polarisation trajectories illustrate how a magnetic moment precesses if effective damping and eddy-currents impacts its motion. For computation, typical parameter values like the saturation polarisation J_s=μ₀·M_s=1.4 T and in-plane uniaxial anisotropy μ₀·H_u=4.5 mT were employed. The main focus of simulation was on the variation of the effective damping parameter α_eff between 0.01 and 0.05 and ferromagnetic film thickness t_m between 200 nm and 1200 nm. The frequency-dependent calculations were carried out between 50 MHz and 6 GHz. The time-dependent simulations were done for a duration between 5 and 30 ns.     

Extracting uniaxial anisotropy of ferromagnetic layer in exchange-biased system

Effective anisotropy of the ferromagnetic pinned layer of ferro(FM)-antiferromagnetic (AF)-coupled NiFe(FM)/FeMn(AF) exchange-biased system was investigated in a broad frequency range (100 MHz-5 GHz) using a complex permeability spectrum. The exchange bias and effective uniaxial anisotropy fields of the thin film have been computed theoretically using the Landau-Lifschitz-Gilbert (LLG) equation. From the measurements, uniaxial anisotropy of the pinned FM layer has been extracted to understand the nature of the exchange bias in the system. It is found that the uniaxial anisotropy field of NiFe layer when exchange biased with the AF layer increases from 5 to 15 Oe at different external magnetic fields.     

Microstructure and magnetic properties of nanocomposite FePt/MgO and FePt/Ag films

An in-plane magnetic anisotropy of FePt film is obtained in the MgO 5 nm/FePt t nm/MgO 5 nm films (where t=5, 10 and 20 nm). Both the in-plane coercivity (H_c∥) and the perpendicular magnetic anisotropy of FePt films are increased when introducing an Ag-capped layer instead of MgO-capped layer. An in-plane coercivity is 3154 Oe for the MgO 5 nm/FePt 10 nm/MgO 5 nm film, and it can be increased to 4846 Oe as a 5 nm Ag-capped layer instead of MgO-capped layer. The transmission electron microscopy (TEM)-energy disperse spectrum (EDS) analysis shows that the Ag mainly distributed at the grain boundary of FePt, that leads the increase of the grain boundary energy, which will enhance coercivity and perpendicular magnetic anisotropy of FePt film.     

Influence of the nitrogen contents on the permeability characteristics and soft magnetic properties of FeHfN films

High permeability magnetic films can enhance the inductance of thin-film inductors in DC-DC converters. In order to obtain high permeability, the uniaxial anisotropy and coercivity should be as low as possible. This study employed dc reactive magnetron sputtering to fabricate nanocrystalline FeHfN thin films. The influence of the nitrogen flow on the composition, microstructure, and permeability characteristics, as well as magnetic properties was investigated. Increasing the nitrogen content can alter FeHfN films from amorphous-like to crystalline phases. The magnetic properties and permeability depend on variations in the microstructure. With the optimum N₂/Ar flow ratio of 4.8% (N₂ flow: 1.2 sccm), low anisotropy (H_K = 18 Oe), low coercivity (H_C = 1.1 Oe) and high permeability (μ′ > 600 at 50 MHz) were obtained for fabrication of a nanocrystalline FeHfN film with a thickness of around 700 nm. Such as-fabricated FeHfN films with a permeability of over 600 should be a promising candidate for high-permeability ferromagnetic material applications.     

On the relation between the effective ferromagnetic resonance linewidth Δfeff and damping parameter αeff in ferromagnetic Fe-Co-Hf-N nanocomposite films

Ferromagnetic Fe-Co-Hf-N nanocomposite films were investigated concerning their microstructure-dependent frequency behaviour. To modify the composition, the films were deposited by reactive RF magnetron sputtering by using three different 6 in. targets with various Hf fractions. The films were post-annealed up to 600 °C in a static magnetic field to induce an in-plane uniaxial anisotropy and to obtain different crystal sizes. Depending on the annealing temperature, high-frequency losses were investigated by considering the full-width at half-maximum (FWHM) Δf_eff of the imaginary part of the frequency-dependent permeability which showed a resonance frequency f_FMR of 2.3 GHz for an in-plane uniaxial anisotropy field H_u of 4 mT. The FWHM in correlation with the damping parameter α_eff is discussed, e.g., in terms of two-magnon scattering. Damping occurs due to film inhomogeneity in magnetisation and uniaxial anisotropy caused by a magnetocrystalline anisotropy H_a and/or non-magnetic phases. This will result in homogenous or even inhomogeneous resonance line broadening if additional and resonance as well as precession frequencies of independent grains arise.     

具有条纹磁畴结构的NiFe薄膜的制备与磁各向异性研究

具有条纹磁畴结构的磁性薄膜表现出面内转动磁各向异性,对于解决高频电子器件的方向性问题起着至关重要的作用.本文采用射频磁控溅射的方法,研究了NiFe薄膜的厚度、溅射功率密度、溅射气压等制备工艺参数对条纹磁畴结构、面内静态磁各向异性、面内转动磁各向异性、垂直磁各向异性的影响规律.研究发现,在功率密度15.6 W/cm~2与溅射气压2 mTorr(1 Torr=1.33322×102Pa)下生长的NiFe薄膜,表现出条纹磁畴的临界厚度在250 nm到300 nm之间.厚度为300 nm的薄膜比250 nm薄膜的垂直磁各向异性场增大近一倍,从而磁矩偏离膜面形成条纹磁畴结构,并表现出面内转动磁各向异性.高溅射功率密度可以降低薄膜出现条纹磁畴的临界厚度.在相同功率密度15.6 W/cm~2下生长300 nm的NiFe薄膜,随着溅射气压由2 mTorr增大到9 mTorr,NiFe薄膜的垂直磁各向异性场逐渐由1247.8 Oe(1 Oe=79.5775 A/m)增大到3248.0 Oe,面内转动磁各向异性场由72.5 Oe增大到141.9 Oe,条纹磁畴周期从0.53μm单调减小到0.24μm.NiFe薄膜的断面结构表明柱状晶的形成是表现出条纹磁畴结构的本质原因,高功率密度下低溅射气压有利于柱状晶结构的形成,表现出规整的条纹磁畴结构,高溅射气压会导致柱状晶纤细化,面内转动磁各向异性与面外垂直磁各向异性增强,条纹磁畴结构变得混乱.     

High-frequency characteristics of CoFeVAlONb thin films

High-frequency characteristics of CoFeVAlONb thin films were studied. A thin film of Co_43.47Fe_35.30V_1.54Al_5.55O_9.93Nb_4.21 is observed to exhibit excellent magnetic properties; magnetic coercivity of 1.24 Oe, uniaxial in-plane anisotropy field of 66.99 Oe, and saturation magnetization of 19.8 kG. The effective permeability of the film is as high as 1089 and is stable up to 1.8 GHz, and with ferromagnetic resonance over 3 GHz. This film also has very high electrical resistivity of about 628 μΩ cm. These superior properties make it ideal for high-frequency magnetic applications.     

Role of crystal orientation on the magnetic properties of CoFe2O4 thin films grown on Si (1 0 0) and Al2O3 (0 0 0 1) substrates using pulsed laser deposition

We report the influence of crystal orientation on the magnetic properties of CoFe₂O₄ (CFO) thin films grown on single crystal Si (1 0 0) and c-cut sapphire (Al₂O₃) (0 0 0 1) substrates using pulsed laser deposition technique. The thickness was varied from 200 to 50 nm for CFO films grown on Si substrates, while it was fixed at 200 nm for CFO films grown on Al₂O₃ substrates. We observed that the 200 and 100 nm thick CFO-Si films grew in both (1 1 1) and (3 1 1) directions and displayed out-of-plane anisotropy, whereas the 50 nm thick CFO-Si film showed only an (1 1 1) orientation and an in-plane anisotropy. The 200 nm thick CFO film grown on an Al₂O₃ substrate was also found to show a complete (1 1 1) orientation and a strong in-plane anisotropy. These observations pointed to a definite relation between the crystalline orientation and the observed magnetic anisotropy in the CFO thin films.     

In-plane magnetic anisotropy and coercive field dependence upon thickness of CoFeB

The structural and magnetic properties of as-grown 5–50 nm thin ion-beam sputter deposited transition metal–metalloid Co₂₀Fe₆₀B₂₀ (CFB) films are reported in this communication. A broad peak observed at 2θ∼45° in the glancing angle X-ray diffraction pattern revealed the formation of very fine nano-sized grains embedded in majority amorphous CFB matrix. Although no magnetic field is applied during deposition, the longitudinal magneto-optic Kerr effect measurements performed at 300 K in these as-grown films clearly established the presence of in-plane uniaxial magnetic anisotropy (K_u). It is argued that this observed anisotropy is strain-induced. This is supported by the observed dependence of direction of K_u on the angle between applied magnetic field and crystallographic orientation of the underlying Si(100) substrate, and increase in the coercivity with the increase of the film thickness.     

Spin-engineering in the Co75Fe25/Cu(1 1 0) system

We present results on the growth and magnetic anisotropies of Co₇₅Fe₂₅ films grown on a Cu(1 1 0) single crystal. Angular dependent MOKE measurements show a thickness dependent, in-plane rotation of the easy axis of magnetisation of up to 60° from the [0 0 1] direction (towards [−1 1 0]). For a film thickness of 5 ML, just greater than that required for the onset of ferromagnetism, uniaxial anisotropy is observed with the easy axis along the [0 0 1] direction. As the film thickness increases this is seen to rotate in-plane towards the [−1 1 0] direction as the contribution from the cubic anisotropy constant grows. At a film thickness of 9 ML there is predominantly cubic anisotropy and at 10 ML the easy axis is rotated to 150° with respect to the [1 −1 0] axis, where it is stabilised.     

On the comparison of the polarisation behaviour of exchange-biased AF/F NiMn/Fe37Co48Hf15 bi-layer and multi-layer films with increased ferromagnetic cut-off frequencies

Antiferromagnetic/ferromagnetic (AF/F) NiMn/Fe₃₇Co₄₈Hf₁₅ films were investigated with respect to their exchange bias, in-plane unidirectional anisotropy, polarisation and high frequency behaviour. After deposition, carried out by r.f. magnetron sputtering, the films were post-annealed for 4 h at 300 °C in a static magnetic field, in order to induce exchange-bias, which results in a unidirectional anisotropy. Dependent on the presence of a bi-layer or multi-layer sandwich structure the films show a different exchange-bias field-ferromagnetic inter-layer thickness behaviour with exchange-bias fields μ₀?H_eb between 2 and 10 mT. The in-plane uniaxial (single film) or unidirectional anisotropy fields μ₀*H_UF were between 4 and 18 mT. This results in a significant increase of the cut-off frequency in the GHz range in comparison to a single Fe₃₇Co₄₈Hf₁₅ film, which is shown by frequency-dependent permeability plots. High damping in the imaginary part of the permeability, i.e., high resonance line broadening could be observed for films with high coercivity μ₀*H_c of around 7 mT in the easy axis of magnetisation.     

Anisotropy and dynamic properties of Co2MnGe Heusler thin films

Co₂MnGe films of 30 and 50 nm in thickness were grown by RF-sputtering. Their magnetic anisotropies, dynamic properties and the different excited spin wave modes have been studied using conventional ferromagnetic resonance (FMR) and Microstrip line FMR (MS-FMR). From the in-plane and the out-of-plane resonance field values, the effective magnetization (4πM_eff) and the g-factor are deduced. These values are then used to fit the in-plane angular-dependence of the uniform precession mode and the field-dependence of the resonance frequency of the uniform mode and the first perpendicular standing spin wave to determine the in-plane uniaxial, the four-fold anisotropy fields, the exchange stiffness constant and the magnetization at saturation. The samples exhibit a clear predominant four-fold magnetic anisotropy besides a smaller uniaxial anisotropy. This uniaxial anisotropy is most probably induced by the growth conditions.     

Low-field microwave absorption behaviors on single layer magnetic film and exchange coupled multilayer magnetic film

This study examined the magnetization reversal effects on low-field microwave absorption in a Fe_91.6B_2.5N_5.9 single layered film with in-plane uniaxial magnetic anisotropy and a multi-layered film with giant magnetoresistivity using ferromagnetic resonance measurements at 9.84 GHz. Two different kinds of absorption modes were observed at near zero dc field and high dc field. The signals at high-field showed all the features of ferromagnetic resonance due to spin precession. However, the absorption signals at low-field should be associated with the switching field at unsaturated magnetic field region.     

Recovery of soft magnetic properties of FeNiSm films by Ta interlayer

The magnetic properties of FeNiSm thin films with different thicknesses, different Ta interlayer thicknesses and different numbers of Ta interlayers were investigated. The single layer FeNiSm shows in-plane uniaxial anisotropy at a thickness below critical value, but shows weak perpendicular anisotropy with a stripe domain structure at thickness above the critical value. Experiments indicate that one or more Ta interlayers inserted into thick FeNiSm films with weak perpendicular anisotropy were effective not only in canceling the perpendicular anisotropy, but also in recovering the in-plane uniaxial anisotropy. Blocking of the columnar growth of FeNi grains by the Ta interlayer is considered to be responsible for this spin reorientation phenomenon. Moreover, the magnetization reversal mechanism in FeNiSm films with uniaxial anisotropy can be ascribed to coherent rotation when the applied field is close to the hard axis and to domain-wall unpinning when the applied field is close to the easy axis. The dynamic magnetic properties of FeNiSm films with uniaxial anisotropy were investigated in the frequency range 0.1-5 GHz. The degradation of the soft magnetic properties of magnetic thin films due to the growth of columnar grains can be avoided by insertion of a Ta interlayer.     

Soft magnetic properties of FeCo films with Co underlayer

Bilayered Fe₆₅Co₃₅ (=FeCo)/Co films were prepared by facing targets sputtering with 4πM_s∼24 kg. The soft magnetic properties of FeCo films were induced by a Co underlayer. H_c decreased rapidly when the Co underlayer was 2 nm or more. The films showed well-defined in-plane uniaxial anisotropy with the typical values of H_ce=10 Oe and H_ch=3 Oe, respectively. High frequency characteristics of the films show the films can work at 0.8 GHz with real permeability as high as 250.     

Thickness dependence of magnetic domain formation in La0.6Sr0.4MnO3 epitaxial thin films studied by XMCD-PEEM

We have used photoelectron emission microscopy (PEEM) and X-ray magnetic circular dichroism (XMCD) to study the effect of thin film thickness on the magnetic domain formation in La_0.6Sr_0.4MnO₃ samples that were epitaxially grown on stepped SrTiO₃ (0 0 1) substrates. The magnetic image exhibited a stripe structure elongated along the step direction, irrespective of film thickness, suggesting that uniaxial magnetic anisotropy induced by step-and-terrace structures plays an important role in the magnetic domain formation. Additional domains evolved gradually with increasing film thickness. In these domains, the direction of magnetization differed from the step direction due to biaxial magneto-crystalline anisotropy. The evolution of additional magnetic domains with increasing film thickness implies that a competition exists between the two anisotropies in LSMO films.     

Influence of grain growth on the high-frequency behaviour of ferromagnetic Fe-Co-(M)-N (M=Ta, Hf) nanocomposite films

The CMOS compatible ferromagnetic Fe-Co-(M)-N (M=Ta, Hf) films were investigated with regard to their grain size-dependent frequency behaviour. Predominantly Fe₃₃Co₄₀Ta₁₀N₁₇ films were deposited by reactive r.f. magnetron sputtering. These films were compared to Fe₃₆Co₄₄Hf₉N₁₁ films. In order to induce an in-plane uniaxial anisotropy H_u as well as to investigate the grain growth behaviour, the films were annealed in a static magnetic field. The in-plane uniaxial anisotropy field of around 4 mT as well as a good soft magnetic behaviour with a saturation polarisation of approximately 1.2-1.4 T could be observed after heat treatment. Ferromagnetic resonance frequencies (FMR) of approximately up to 2.4 GHz could be achieved according to the Kittel theory. Depending on the heat treatment, high-frequency losses through energy dissipation was made conspicuous by means of the full-width at half-maximum (FWHM) Δf_eff of the imaginary part of the frequency-dependent permeability which was between 0.4 and 1 GHz. This FWHM was basically discussed in terms of two-magnon scattering theories, in combination with the Herzer random anisotropy model. In order to correlate the resonance line broadening with a phenomenological damping parameter α_eff, which ranged from about 0.0125 to 0.028, the modified Landau-Lifschitz-Gilbert equation was used to fit and describe the permeability spectra of the ferromagnetic films.     

Effect of nanoparticle size on magnetic damping parameter in Co92Zr8 soft magnetic films

Co₉₂Zr₈(50 nm)/Ag(x) soft magnetic films have been prepared on Si (111) substrates by oblique sputtering at 45°. Nanoparticle size of Co₉₂Zr₈ soft magnetic films can be tuned by thickening Ag buffer layer from 9 nm to 96 nm. The static and dynamic magnetic properties show great dependence on Ag buffer layer thickness. The coercivity and effective damping parameter of Co₉₂Zr₈ films increase with thickening Ag buffer layer. The intrinsic and extrinsic parts of damping were extracted from the effective damping parameter. For x=96 nm film, the extrinsic damping parameter is 0.028, which is significantly larger than 0.004 for x=9 nm film. The origin of the enhancement of extrinsic damping can be explained by increased inhomogeneity of anisotropy. Therefore, it is an effective method to tailor magnetic damping parameter of thin magnetic films, which is desirable for high frequency application.     

Mǒsbauer study of the field induced uniaxial anisotropy in electro-deposited FeCo alloy films

Thin ferromagnetic films with in-plane magnetic anisotropy are promising materials for obtaining high microwave permeability.The paper reports a Mo¨ssbauer study of the field induced in-plane uniaxial anisotropy in electro-deposited FeCo alloy films.The FeCo alloy films were prepared by the electro-deposition method with and without an external magnetic field applied parallel to the film plane during deposition.Vibrating sample magnetometry and Mo¨ssbauer spectroscopy measurements at room temperature indicate that the film deposited in external field shows an in-plane uniaxial anisotropy with an easy direction coinciding with the external field direction and a hard direction perpendicular to the field direction,whereas the film deposited without external field does not show any in-plane anisotropy.Mo¨ssbauer spectra taken in three geometric arrangements show that the magnetic moments are almost constrained in the film plane for the film deposited with applied magnetic field.Also,the magnetic moments tend to align in the direction of the applied external magnetic field during deposition,indicating that the observed anisotropy should be attributed to directional ordering of atomic pairs.