Ferromagnetism in amorphous Ge1−xMnx grown by low temperature vapor deposition

Magnetic properties of amorphous Ge_1−xMn_x thin films were investigated. The thin films were grown at 373 K on (100) Si wafers by using a thermal evaporator. Growth rate was ∼35 nm/min and average film thickness was around 500 nm. The electrical resistivities of Ge_1−xMn_x thin films are 5.0×10⁻⁴∼100 Ω cm at room temperature and decrease with increasing Mn concentration. Low temperature magnetization characteristics and magnetic hysteresis loops measured at various temperatures show that the amorphous Ge_1−xMn_x thin films are ferromagnetic but the ferromagnetic magnetizations are changing gradually into paramagnetic as increasing temperature. Curie temperature and saturation magnetization vary with Mn concentration. Curie temperature of the deposited films is 80-160 K, and saturation magnetization is 35-100 emu/cc at 5 K. Hall effect measurement at room temperature shows the amorphous Ge_1−xMn_x thin films have p-type carrier and hole densities are in the range from 7×10¹⁷ to 2×10²² cm⁻³.     

Effect of Fe substitution on magnetocaloric effect in La0.7Sr0.3Mn1−xFexO3 (0.05≤x≤0.20)

We have studied the effect of Fe substitution on magnetic and magnetocaloric properties in La_0.7Sr_0.3Mn_1−xFe_xO₃ (x=0.05, 0.07, 0.10, 0.15, and 0.20) over a wide temperature range (T=10-400 K). It is shown that substitution by Fe gradually decreases the ferromagnetic Curie temperature (T_C) and saturation magnetization up to x=0.15 but a dramatic change occurs for x=0.2. The x=0.2 sample can be considered as a phase separated compound in which both short-range ordered ferromagnetic and antiferromagnetic phases coexist. The magnetic entropy change (−ΔS_m) was estimated from isothermal magnetization curves and it decreases with increase of Fe content from 4.4 J kg⁻¹ K⁻¹ at 343 K (x=0.05) to 1.3 J kg⁻¹ K⁻¹ at 105 K (x=0.2), under ΔH=5 T. The La_0.7Sr_0.3Mn_0.93Fe_0.07O₃ sample shows negligible hysteresis loss, operating temperature range over 60 K around room temperature with refrigerant capacity of 225 J kg⁻¹, and magnetic entropy of 4 J kg⁻¹ K⁻¹ which will be an interesting compound for application in room temperature refrigeration.     

DC conductivity of silver vanadium tellurite glasses

The mixed electronic-ionic conduction in 0.5[xAg₂O-(1−x)V₂O₅]-0.5TeO₂ glasses with x=0.1-0.8 has been investigated over a wide temperature range (70-425 K). The mechanism of dc conductivity changes from predominantly electronic to ionic within the 30?mol% Ag₂O?40 range; it is correlated with the underlying change in glass structure. The temperature dependence of electronic conductivity has been analyzed quantitatively to determine the applicability of various models of conduction in amorphous semiconducting glasses. At high temperature, T>θ_D/2 (where θ_D is the Debye temperature) the electronic dc conductivity is due to non-adiabatic small polaron hopping of electrons for 0.1?x?0.5. The density of states at Fermi level is estimated to be N(E_F)≈10¹⁹-10²⁰ eV⁻¹ cm⁻³. The carrier density is of the order of 10¹⁹ cm⁻³, with mobility ≈2.3×10⁻⁷-8.6×10⁻⁹ cm² V⁻¹ s⁻¹ at 300 K. The electronic dc conductivity within the whole range of temperature is best described in terms of Triberis-Friedman percolation model. For 0.6?x?0.8, the predominantly ionic dc conductivity is described well by the Anderson-Stuart model.     

Elastic, thermal and structural properties of platinum

The thermal equation of state (EOS) for platinum has been calculated to 300 GPa and 3000 K using ab initio molecular dynamics employing the local density approximation (LDA) and the projector augmented-wave methods (PAW). Direct ab initio molecular dynamics avoids the simplifying assumptions inherent in empirical treatments of thermoelasticity. A third-order Birch-Murnaghan equation EOS fitted to the 300 K data yielded an isothermal bulk modulus of B_T0=290.8 GPa and a pressure derivative of B_T′=5.11, which are in better agreement with the measured values than those obtained by previous calculations. The high-temperature data were fitted to a thermal pressure EOS and a Mie-Grüneisen-Debye EOS. The resulting calculated thermal expansion coefficient, α₀, temperature derivative of the isothermal bulk modulus, (∂B_T/∂T)_V, and second temperature derivative of the pressure, (∂²P/∂T²)_V, were 1.94×10⁻⁵ K⁻¹, −0.0038 GPa K⁻¹, and 1.7×10⁻⁷ GPa² K⁻², respectively. A fit to the Mie-Grüneisen-Debye EOS yielded values for the Grüneisen parameter, γ₀, and its volume dependence parameter, q, of 2.18 and 1.75, respectively. An analysis of our data revealed a strong volume dependence of the thermal pressure of platinum. We also present a qualitative analysis of the effects of intrinsic anharmonicity from the calculated Grüneisen parameter at high temperatures.     

The effect of ferroelectric polarization on the interaction of water and methanol with the surface of LiNbO3(0 0 0 1)

Water and methanol temperature programmed desorption (TPD) measurements were performed on the positive (c⁺) and negative (c⁻) surfaces of poled ferroelectric lithium niobate (LiNbO₃) single crystals. The results indicate that the molecule-surface interactions are both coverage and polarization-dependent. From a comparison of the TPD spectra for the positive and negative surfaces, it is shown that the desorption temperatures of water and methanol are consistently lower on the negative surface by 15 K and 20 K, respectively. The TPD spectra were simulated using the Polanyi-Wigner equation with a coverage-dependent energy term. These calculations show that the polarization dependence of the desorption temperature is due to a difference in the zero-coverage desorption energies on the two surfaces equal to a few kJ per mole. The mechanism for the polarization effect is explored with in situ pyroelectric voltage measurements, which indicate that a surface voltage of ±2 mV develops in the LiNbO₃(0 0 0 1) samples during TPD measurements. The magnitude of the pyroelectric-induced surface charge is heating rate dependent.     

Oxygen deficiency, vacancy clustering and ionic transport in (La,Sr)CoO3 − δ

The equilibrium p(O₂)-T-δ diagrams of perovskite-type La_1 − xSr_xCoO_3 − δ (x = 0.3-0.7), collected at 873-1223 K in the oxygen partial pressure range 10^− 5-1 atm by coulometric titration and thermogravimetric analysis, were analyzed in order to appraise the effects of the point-defect interactions. The nonstoichiometry variations were adequately described combining the rigid-band approach for delocalized holes and the pair-cluster formation reaction involving oxygen vacancies and Co²⁺ cations, whilst coulombic repulsion between the positively charged vacancies can be neglected. The resultant relationships between the oxygen chemical potential and mobile vacancy concentration were used for numerical regression analysis of the steady-state oxygen permeation through dense La_1 − xSr_xCoO_3 − δ membranes, affected by the surface exchange kinetics when Sr²⁺ content is higher than 40-50%. The calculated ionic conductivity is strongly influenced by the defect association processes, and decreases with decreasing concentration of the mobile vacancies as clustering starts to prevail on reduction. The Mössbauer spectroscopy studies of La_1 − xSr_xCoO_3 − δ, doped with 1 mol% ⁵⁷Fe isotope and moderately reduced at p(O₂) ≈ 10⁻⁵ atm, show no long-range vacancy ordering at x ≤ 0.5.     

Analysis of the current-transport mechanism across a CVD diamond/silicon interface

This work presents a study on the mechanism of injection and charge transport through a CVD diamond/n⁺-Si interface. The current-voltage-temperature characteristics of CVD diamond/silicon heterojunctions measured in the temperature range 119-400 K have been interpreted according to thermionic theory and thermionic field-emission theory. This junction shows deviations from the ideal thermionic theory current model, suggesting the presence of surface states, thin-layer depletion and/or non-homogeneity in the diamond/silicon interface. The T₀ anomaly has been used to explain the behaviour of the ideality factor with temperature. At very low temperatures tunnelling may occur because the E₀₀ values for these junctions are close to the value expected by thermionic field-emission theory. The usual activation-energy plot deviates from linearity at low temperatures. This deviation has been corrected supposing a ln(J_S/T²) versus 10³/nT plot. Under these conditions the Richardson constant is found to be 0.819 A cm⁻² K⁻², which is close to the theoretical value of 1.2 A cm⁻² K⁻². Field-emission device is a promising application for diamond/silicon structure.     

Direct observation of the D′ 2g(P2)-A′ Π(2u) system for Cl2 by laser induced fluorescence spectroscopy: Determination of the absolute position of the A′ state

In a discharged supersonic jet of Cl₂, transitions of the D′ 2_g(³P₂)-A′ ³Π(2_u) system for ³⁵Cl₂ were observed directly by laser induced fluorescence spectroscopy. By a discharge in Cl₂, the Cl₂ molecules were populated into the A′ state, which is a metastable and optically forbidden state, from the state. An ultraviolet laser radiation excites the molecules to the D′ ion-pair state. A set of Dunham parameters for the A′ state is determined from a global least-squares fitting for 59 vibronic bands with v″ = 0-7. In the fitting, the previously reported data, T(v) and B(v) for the v = 14 and 15 bands of the A′ state [T. Ishiwata, A. Ishiguro, K. Obi, J. Mol. Spectrosc. 147 (1991) 300-320], were included. Y₀₀ = 57295.723(5) cm⁻¹ of the D′ state [J.-H. Si, T. Ishiwata, K. Obi, J. Mol. Spectrosc. 147 (1991) 334-345] was also included in the global fitting in order to determine the absolute position of the A′ state. The determined parameters of the A′ state are Y₀₀ = 17171.506(14), Y₁₀ = 255.915(85), Y₂₀ = −4.465(70), Y₃₀ = −8.7(23) × 10⁻², Y₄₀ = 6.3(35) × 10⁻³, Y₅₀ = −4.9(26) × 10⁻⁴, Y₆₀ = 1.43(69) × 10⁻⁵, Y₀₁ = 0.16282(15), Y₁₁ = −2.363(68) × 10⁻³, Y₂₁ = −5.01(93) × 10⁻⁵, and Y₃₁ = −3.01(36) × 10⁻⁶ (in cm⁻¹ and one standard deviations of the fit in parentheses). The absolute position of the A′ state is determined with good accuracy.     

Highly active Ce1−xCuxO2 nanocomposite catalysts for the low temperature oxidation of CO

A series of Ce_1−xCu_xO₂ nanocomposite catalysts with various copper contents were synthesized by a simple hydrothermal method at low temperature without any surfactants, using mixed solutions of Cu(II) and Ce(III) nitrates as metal sources. These bimetal oxide nanocomposites were characterized by means of XRD, TEM, HRTEM, EDS, N₂ adsorption, H₂-TPR and XPS. The influence of Cu loading (5-25 mol%) and calcination temperature on the surface area, particle size and catalytic behavior of the nanocomposites have been discussed. The catalytic activity of Ce_1−xCu_xO₂ nanocomposites was investigated using the test of CO oxidation reaction. The optimized performance was achieved for the Ce_0.80Cu_0.20O₂ nanocomposite catalyst, which exhibited superior reaction rate of 11.2 × 10⁻⁴ mmol g⁻¹ s⁻¹ and high turnover frequency of 7.53 × 10⁻² s⁻¹ (1% CO balanced with air at a rate of 40 mL min⁻¹, at 90 °C). No obvious deactivation was observed after six times of catalytic reactions for Ce_0.80Cu_0.20O₂ nanocomposite catalyst.     

Low-temperature thermoelectric properties of Bi85Sb15−xNbx alloys prepared by high-press sintering

The nanocrystalline materials with the general formula Bi₈₅Sb_15−xNb_x (x=0, 0.5, 1, 2, 3) were prepared by mechanical alloying and subsequent high-pressure sintering. Their transport properties involving electrical conductivity, Seebeck coefficient and thermal conductivity have been investigated in the temperature range of 80-300 K. The absolute value of Seebeck coefficient of Bi₈₅Sb₁₃Nb₂ reaches a maximum of 161 μV/K at 105 K, which is 69% larger than that of Bi₈₅Sb₁₅ at the same temperature. The power factor and figure-of-merit are 4.45×10⁻³ WK⁻²m⁻¹ at 220 K and 1.79×10⁻³ K⁻¹ at 196 K, respectively. These results suggest that thermoelectric properties of Bi₈₅Sb₁₅ based material can be improved by Nb doping.     

Investigation of diode parameters using I-V and C-V characteristics of In/SiO2/p-Si (MIS) Schottky diodes

A study on interface states density distribution and characteristic parameters of the In/SiO₂/p-Si (MIS) capacitor has been made. The thickness of the SiO₂ film obtained from the measurement of the corrected capacitance in the strong accumulation region for MIS Schottky diodes was 220 Å. The diode parameters from the forward bias I-V characteristics such as ideality factor, series resistance and barrier heights were found to be 1.75, 106-112 Ω and 0.592 eV, respectively. The energy distribution of the interface state density D_it was determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. The interface state density obtained using the I-V characteristics had an exponential growth, with bias towards the top of the valance band, from 9.44×10¹³ eV⁻¹ cm⁻² in 0.329-E_v eV to 1.11×10¹³ eV⁻¹ cm⁻² in 0.527-E_v eV at room temperature. Furthermore, the values of interface state density D_it obtained by the Hill-Coleman method from the C-V characteristics range from 52.9×10¹³ to 1.11×10¹³ eV⁻¹ cm⁻² at a frequency range of 30kHz-1 MHz. These values of D_it and R_s were responsible for the non-ideal behaviour of I-V and C-V characteristics.     

Iron isotope effect on Tc in optimally-doped (Ba,K)Fe2As2 (Tc = 38 K) and SmFeAsO1−y (Tc = 54 K) superconductors

We report the iron isotope effect on a transition temperature (T_c) in an optimally-doped (Ba,K)Fe₂As₂ (T_c = 38 K) and SmFeAsO_1−y (T_c = 54 K) superconductors. In order to obtain the reliable isotope shift in T_c, twin samples with different iron isotope mass are synthesized in the same conditions (simultaneously) under high-pressure. We have found that (Ba,K)Fe₂As₂ shows an inverse iron isotope effect α_Fe = −0.18 ± 0.03 while SmFeAsO_1−y shows a small iron isotope effect α_Fe = −0.02 ± 0.01, where the isotope exponent α is defined by T_c ∼ M^−α (M is the isotopic mass). The results show that α_Fe changes in the iron-based superconductors depending on the system. The distinct iron isotope effects imply the exotic coupling mechanism in the iron-based superconductors.     

Adsorption of iso-butane on ZnO(0 0 0 1)-Zn

Presented are thermal desorption spectroscopy (TDS) and adsorption probability measurements of iso-butane on the Zn-terminated surface of ZnO. The initial adsorption probability, S₀, decreases linearly from 0.57 to 0.22 (±0.02) with impact energy, E_i = 0.74-1.92 eV, and is independent of adsorption temperature, T_s = 91-114 K (±5 K), indicating non-activated molecular adsorption. The coverage, Θ, dependent adsorption probabilities, S(Θ), show a cross-over from adsorbate-assisted adsorption (S increases with Θ) to Kisliuk-like dynamics at about the desorption temperature of iso-butane bi-layers (∼110 K). Thus, the adsorption dynamics are precursor-mediated. The enhanced (gas-surface) mass-match, caused by forming a second layer of the alkane, leads to adsorbate-assisted adsorption. A direct fitting procedure of the TDS data yields a pre-exponential factor of 2.5 × 10¹³/s and a coverage dependent heat of adsorption of E_d(Θ) = 39 − 6 ∗ Θ + 2.5 ∗ exp(−Θ/0.07) kJ/mol.     

Ab initio chemical kinetics for the reactions of HNCN with O(P) and O2

The kinetics and mechanisms of the reactions of cyanomidyl radical (HNCN) with oxygen atoms and molecules have been investigated by ab initio calculations with rate constant prediction. The doublet and quartet state potential energy surfaces (PESs) of the two reactions have been calculated by single-point calculations at the CCSD(T)/6-311+G(3df, 2p) level based on geometries optimized at the CCSD/6-311++G(d, p) level. The rate constants for various product channels of the two reactions in the temperature range of 300-3000 K are predicted by variational transition state and RRKM theories. The predicted total rate constants of the O(³P) + HNCN reaction at 760 Torr Ar pressure can be represented by the expressions k_total (O + HNCN) = 3.12 × 10⁻¹⁰ × T^−0.05 exp (−37/T) cm³ molecule⁻¹ s⁻¹ at T = 300-3000 K. The branching ratios of primary channels of the O(³P) + HNCN are predicted: k₁ for producing the NO + CNH accounts for 0.72-0.64, k₂ + k₉ for producing the ³NH + NCO accounts for 0.27-0.32, and k₆ for producing the CN + HNO accounts for 0.01-0.07 in the temperature range studied. Meanwhile, the predicted total rate constants of the O₂ + HNCN reaction at 760 Torr Ar pressure can be represented by the expression, k_total(O₂ + HNCN) = 2.10 × 10⁻¹⁶ × T^1.28exp (−12200/T) cm³ molecule⁻¹ s⁻¹ at T = 300-3000 K. The predicted branching ratio for k₁₁ + k₁₃ producing HO₂ + ³NCN as the primary products accounts for 0.98-1.00 in the temperature range studied.     

Enhanced ferroelectric properties of (Pb0.90La0.10)Ti0.975O3 multilayered thin films prepared by RF magnetron sputtering

The (Pb_0.90La_0.10)Ti_0.975O₃/PbTiO₃ (PLT/PT), PbTiO₃/(Pb_0.90La_0.10)Ti_0.975O₃/PbTiO₃ (PT/PLT/PT) multilayered thin films with a PbO_x buffer layer were in situ deposited by RF magnetron sputtering at the substrate temperature of 600 °C. With this method, highly (1 0 0)-oriented PLT/PT and PT/PLT/PT multilayered thin films were obtained. The PbO_x buffer layer leads to the (1 0 0) orientation of the films. The dielectric, ferroelectric and pyroelectric properties of the PLT multilayered thin films were investigated. It is found that highly (1 0 0)-oriented PT/PLT/PT multilayered thin films possess higher remnant polarization 2P_r (44.1 μC/cm²) and better pyroelectric coefficient at room temperature p (p = 2.425 × 10⁻⁸ C/cm² K) than these of PLT and PLT/PT thin films. These results indicate that the design of the PT/PLT/PT multilayered thin films with a PbO_x buffer layer should be an effective way to enhance the dielectric, ferroelectric and pyroelectric properties. The mechanism of the enhanced ferroelectric properties was also discussed.     

Near room temperature magnetocaloric properties of melt-spun Gd100−xBx (x=0, 5, 10, 15, and 20 at%) alloys

The magnetocaloric properties of melt-spun Gd-B alloys were examined with the aim to explore their potential application as magnetic refrigerants near room temperature. A series of Gd_100−xB_x (x=0, 5, 10, 15, and 20 at%) alloys were prepared by melt spinning. With the decrease in Gd/B ratio, Curie temperature (T_C) remains constant at ∼293 K, and saturation magnetization, at 275 K, decreases from ∼100 to ∼78 emu/g. Negligible magnetic hysteresis was observed in these alloys. The peak value of magnetic entropy change, (−ΔS_M)_max, decreased from ∼9.9 J/kg K (0-5 T) and ∼5.5 J/kg K (0-2 T) for melt-spun Gd to ∼7.7 J/kg K (0-5 T) and ∼4.0 J/kg K (0-2 T), respectively for melt-spun Gd₈₅B₁₅ and Gd₈₀B₂₀ alloys. Similarly, the refrigeration capacity (q) decreased monotonously from ∼430 J/kg (0-5 T) for melt-spun Gd to ∼330 J/kg (0-5 T) for melt-spun Gd₈₀B₂₀ alloy. The near room temperature magnetocaloric properties of melt-spun Gd_100−xB_x (0≤x≤20) alloys were found to be comparable to few first-order transition based magnetic refrigerants.     

High temperature enthalpy, heat capacity and other thermodynamic functions of solid InN

The heat capacity and the heat content of indium nitride were measured by Calvet calorimetry (305-390 K) and by drop calorimetry (427-774 K). The temperature dependence of the heat capacity in the form C_pm=43.886+8.194×10⁻³T−1.007×10⁶T⁻²+8.353×10⁷T⁻³(J K⁻¹ mol⁻¹) was derived by the least squares method from the experimental data. Furthermore, the standard molar entropy S⁰_m (298 K)=42.51 J K⁻¹ mol⁻¹ was assessed taking into account the recently reported phonon density of states, low temperature C_pm and the current data. Thermodynamic functions calculated on the basis of our results and literature data on the heat of formation of InN are given.     

High sensitivity absorption spectroscopy of methane at 80 K in the 1.58 μm transparency window: Temperature dependence and importance of the CH3D contribution

The high resolution absorption spectrum of methane in the 1.58 μm transparency window has been recorded at room temperature and at 79 K by CW-Cavity Ring Down Spectroscopy using a cryogenic cell and a series of Distributed Feed Back (DFB) diode lasers. The achieved sensitivity (α_min ∼ 3 × 10⁻¹⁰ cm⁻¹) has allowed for a detailed characterization of the 6289-6526 cm⁻¹ region which corresponds to the lowest opacity of the transparency window. A list of 6868 and 4555 transitions with intensities as weak as 1 × 10⁻²⁹ cm/molecule was constructed from the recordings at 297 and 79 K, respectively. By comparison with a spectrum of CH₃D recorded separately by Fourier Transform Spectroscopy, 1282 and 640 transitions of monodeuterated methane, CH₃D, in natural abundance in our sample were identified at 297 and 79 K, respectively.The rotational temperature determined from the intensity distribution of the 3ν₂ band of CH₃D (79.3 K) was found in good agreement with the temperature value previously obtained from the Doppler line broadening. The reduction of the rotational congestion by cooling down to 79 K reveals a spectral region near 6300 cm⁻¹ where CH₃D transitions are dominant.The low energy values of the transitions observed both at 79 K and at room temperature were derived from the variation of their line intensities. These transitions with lower energy determination represent 93.9% and 68.4% of the total absorbance in the region, at 79 K and room temperature, respectively. The quality of the obtained empirical low energy values is demonstrated for CH₄ by the marked propensity of the empirical low J values to be close to integers. The line lists at 79 K and room temperature provided as Supplementary Material allow accounting for the temperature dependence of methane absorption between these two temperatures. The investigated region covering the 5ν₄ band of the ¹²CH₄ isotopologue will be valuable for the theoretical treatment of this band which is the lowest energy band of the icosad.     

Theoretical study on the kinetics for OH reactions with CH3OH and C2H5OH

Kinetics and mechanisms for reactions of OH with methanol and ethanol have been investigated at the CCSD(T)/6-311 + G(3df, 2p)//MP2/6-311 + G(3df, 2p) level of theory. The total and individual rate constants, and product branching ratios for the reactions have been computed in the temperature range 200-3000 K with variational transition state theory by including the effects of multiple reflections above the wells of their pre-reaction complexes, quantum-mechanical tunneling and hindered internal rotations. The predicted results can be represented by the expressions k₁ = 4.65 × 10⁻²⁰ × T^2.68 exp(414/T) and k₂ = 9.11 × 10⁻²⁰ × T^2.58 exp(748/T) cm³ molecule⁻¹ s⁻¹ for the CH₃OH and C₂H₅OH reactions, respectively. These results are in reasonable agreements with available experimental data except that of OH + C₂H₅OH in the high temperature range. The former reaction produces 96-89% of the H₂O + CH₂OH products, whereas the latter process produces 98-70% of H₂O + CH₃CHOH and 2-21% of the H₂O + CH₂CH₂OH products in the temperature range computed (200-3000 K).     

Determination of the low energy values of CH4 transitions in the 2ν3 region near 1.66 μm from absorption spectra at 296 and 81 K

The high resolution absorption spectra of ¹³CH₄ were recorded at 81 K by differential absorption spectroscopy using a cryogenic cell and a series of distributed feed back (DFB) diode lasers and at room temperature by Fourier transform spectroscopy. The investigated spectral region corresponds to the high energy part of the ¹³CH₄ tetradecad dominated by the 2ν₃ overtone near 5988 cm⁻¹. Empirical line lists were constructed containing, respectively, 1629 ¹³CH₄ transitions detected at 81 K (5852-6124 cm⁻¹) and 3481 features (including 85 lines of ¹²CH₄) measured at room temperature (5850-6150 cm⁻¹); the smallest measured intensities are about 3 × 10⁻²⁶ and 4 × 10⁻²⁵ cm/molecule at 81 and 296 K, respectively. The lower state energy values were derived for 1196 ¹³CH₄ transitions from the variation of the line intensities between 81 and 296 K. These transitions represent 99.2% and 84.6% of the total absorbance in the region, at 81 and 296 K, respectively. Over 400 additional weak features were measured at 81 K and could not be matched to lines observed at room temperature. The quality of the resulting empirical low energy values is demonstrated by the excellent agreement with the already-assigned transitions and the clear propensity of the empirical low J values to be close to integers. The two line lists at 81 and at 296 K provided as Supplementary material will enable future theoretical analyses of the upper ¹³CH₄ tetradecad.