共查询到20条相似文献,搜索用时 15 毫秒
1.
Fecioru-Morariu M Ali SR Papusoi C Sperlich M Güntherodt G 《Physical review letters》2007,99(9):097206
The effect of nonmagnetic dilution in metallic antiferromagnets (AFMs) on the exchange bias (EB) has been investigated from a structural, magnetic, and Monte Carlo simulation point of view in bilayers of CoFe/(IrMn)1-xCux. Dilution by Cu atoms throughout the volume of the AFM IrMn gives rise to an enhanced EB field (HEB) for 5 K相似文献
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Yong-Goo Yoo Seong-Gi Min Ho-Jun Ryu Nam-Seok Park Seong-Cho Yu 《Journal of magnetism and magnetic materials》2006
Exchange biased IrMn/NiFe/IrMn thin films were studied as a function of NiFe thickness. In plane angular dependence of a resonance field distribution which is measured by FMR was analyzed as a combined effect of an unidirectional anisotropy and an uniaxial anisotropy. The unidirectional anisotropic field and the uniaxial anisotropic field were linearly varied with NiFe thickness while the films with a thicker NiFe layer do not follow the linear variation. Resonance field and linewidth variations were also analysed with NiFe thickness. 相似文献
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A significant exchange bias(EB) training effect has been observed in sputter deposited FeAu/FeNi bilayers, wherein the exchange field(HE) exhibits a special sign-changeable temperature dependence. Very interestingly, despite the absence of multiple easy axes in the FeAu spin glass(SG) layer, HEdrops abruptly between the first and second magnetic cycles,which is followed by a more gradual continuous change in the subsequent cycles. This training behavior cannot be described by the empirical n-1/2law because of the asymmetric magnetization reversal processes. We propose modifying Binek’s model to include the asymmetric changes of the pinning SG spins at the descending and ascending branches. This new model successfully describes the EB training effect in FeAu/FeNi bilayers. 相似文献
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Qiu XP Yang DZ Zhou SM Chantrell R O'Grady K Nowak U Du J Bai XJ Sun L 《Physical review letters》2008,101(14):147207
For polycrystalline NiFe/FeMn bilayers, we have observed and quantified the rotation of the pinning direction in the exchange bias training and recovery effects. During consecutive hysteresis loops, the rotation of the pinning direction strongly depends on the magnetization reversal mechanism of the ferromagnet layer. The interfacial uncompensated magnetic moment of antiferromagnetic grains may be irreversibly switched and rotated when the magnetization reversal process of the ferromagnet layer is accompanied by domain wall motion and domain rotation, respectively. 相似文献
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P.Y. Yang 《Journal of magnetism and magnetic materials》2010,322(5):542-289
A series of polycrystalline Ag-doped Ni1−xAgxO/Ni bilayers with x up to 0.2 were prepared by magnetron sputtering. X-ray diffraction, atomic force microscopy and transmission electron microscopy analyses reveal that Ag doping significantly reduces the mean NiO grain size and leads to the appearance of Ag nanoparticles on the surface of the Ag-doped NiO films. As x increases, the exchange bias field and coercivity at room temperature decrease as a consequence of the reduced thermal stability of smaller NiO grains and the screening effect resulting from the interfacial Ag nanoparticles. At lower temperatures, a slight enhancement of the exchange bias field is observed in the Ag-doped sample, indicating that the Ag doping increases the uncompensated NiO spin density. In addition, our studies find that the training effect of the Ag-doped sample can be well described by a spin configurational relaxation model, regardless of the presence of Ag nanopartiles at the interface. 相似文献
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This paper reports that a CoFe/IrMn bilayer was deposited by high vacuum magnetron sputtering on silicon wafer
substrate; the thermal relaxation of the CoFe/IrMn bilayer is investigated by means of holding the film in a negative saturation field at various temperatures. The exchange bias decreases with increasing period of time while holding the film in a negative saturation field at a given temperature. Increasing the temperature accelerates the decrease of exchange field. The results can be explained by the quantitative model of the nucleation and growth of antiferromagnetic domains suggested by Xi H W et al. [2007 Phys. Rev. B 75 014434], and it is believed that two energy barriers exist in the
investigated temperature range. 相似文献
8.
Brems S Buntinx D Temst K Van Haesendonck C Radu F Zabel H 《Physical review letters》2005,95(15):157202
We performed a detailed study of the training effect in exchange biased CoO/Co bilayers. High-resolution measurements of the anisotropic magnetoresistance (AMR) display an asymmetry in the first magnetization reversal process and training in the subsequent reversal processes. Surprisingly, the AMR measurements as well as magnetization measurements reveal that it is possible to partially reinduce the untrained state by performing a hysteresis measurement with an in-plane external field perpendicular to the cooling field. Indeed, the next hysteresis loop obtained in a field parallel to the cooling field resembles the initial asymmetric hysteresis loop, but with a reduced amount of spin rotation occurring at the first coercive field. This implies that the antiferromagnetic domains, which are created during the first reversal after cooling, can be partially erased. 相似文献
9.
Influence of Ga+ ion irradiation on thermal relaxation of exchange bias field in exchange-coupled CoFe/IrMn bilayers 下载免费PDF全文
This paper reports that the CoFe/IrMn bilayers are deposited by magnetron sputtering on the surfaces of thermallyoxidized Si substrates.It investigates the thermal relaxations of both non-irradiated and Ga + ion irradiated CoFe/IrMn bilayers by means of holding the bilayers in a negative saturation field.The results show that exchange bias field decreases with the increase of holding time period for both non-irradiated and Ga + ion irradiated CoFe/IrMn bilayers.Exchange bias field is also found to be smaller upon irradiation at higher ion dose.This reduction of exchange bias field is attributed to the change of energy barrier induced by ion-radiation. 相似文献
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N.T. Thanh M.G. Chun N.D. Ha K.Y. Kim C.O. Kim C.G. Kim 《Journal of magnetism and magnetic materials》2006
Planar Hall Effect (PHE) in NiFe(t)/IrMn(10.0 nm) thin film structures has been experimentally investigated as a function of NiFe thickness in the range from 3 to 20 nm, under the applied magnetic field perpendicular to the easy axis. The PHE voltage change and its field sensitivity increase with NiFe thickness, but the field interval of two voltage maxima decreases with the thickness. There are good agreements between measured and calculated PHE voltage profiles, where the parameters of exchange-biased and effective anisotropy fields have been characterized to decrease with NiFe thickness. However, an anisotropic resistivity change increases as the NiFe thickness increases. These analyses suggest that PHE is the effective method, inferred to single domain, to determine the electrical and magnetic parameters in magnetic devices. 相似文献
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The structure dependence of exchange bias in ferromagnetic/antiferromagnetic (FM/AF) bilayers has been investigated in detail by extending Slonczewski's 'proximity magnetism' idea. Here three important parameters are discussed for FM/AF bilayers, i.e. interracial bilinear exchange coupling J1, interracial biquadratic (spin-flop) exchange coupling J2 and antiferromagnetic layer thickness tAF. The results show that both the occurrence and the variety of the exchange bias strongly depend on the above parameters. More importantly, the small spin-flop exchange coupling may result in an exchange bias without the interracial bilinear exchange coupling. However, in general, the spin-flop exchange coupling cannot result in the exchange bias. The corresponding critical parameters in which the exchange bias will occur or approach saturation are also presented. 相似文献
15.
For the ferromagnetic (FM)/antiferromagnetic (AFM) bilayers, both negative and positive exchange bias HE have been observed for low and high cooling field HCF, respectively. The thickness dependence of HE and coercivity HC have been investigated for the cases of negative and positive HE. It is found that the negative HE and the positive one have similar FM thickness dependence that is attributed to the interfacial nature of exchange bias. However, the AFM thickness dependence of positive HE is completely contrary to that of the negative one, which clearly demonstrates that the AFM spins play different roles for the cases of positive and negative HE. In particular, the AFM thickness of positive HE was first highlighted by an AFM spin canting model. These results should be attributed to the interfacial spin configuration after field cooling procedure. 相似文献
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采用了Monte-Carlo方法,讨论了反铁磁层中不同非磁性掺杂浓度下,铁磁/反铁磁双层膜中交换偏置的温度特性. 模拟结果显示:反铁磁层中非磁性掺杂能导致铁磁/反铁磁双层膜中交换偏置的增强. 同时,交换偏置随非磁性掺杂浓度的变化存在极大值,即同一温度下交换偏置随掺杂浓度的变化是非单调的. 并且,随着温度的升高交换偏置的最大值所对应的掺杂浓度向浓度低的方向移动. 它和Hong Jung-Il等人的实验结果完全一致. 究其原因在于反铁磁层相应的自旋排布、磁畴结构等随掺杂浓度的改变发生大的变化,当其正向磁畴和负向磁畴都形成连通的网络结构时,系统的交换偏置达最大. 比较了随机掺杂与规则掺杂的模拟结果. 模拟结果表明规则掺杂能够获得比随机掺杂更大的交换偏置,进一步表明了铁磁/反铁磁双层膜中交换偏置的特性与铁磁/反铁磁界面磁畴结构密切相关. 相似文献
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Nguyen Nguyen Phuoc Nguyen Phu Thuy Nguyen Anh Tuan Le Thanh Hung Nguyen Trung Thanh Nguyen Thanh Nam 《Journal of magnetism and magnetic materials》2006
Exchange-biased CrMn/Co bilayers with various thicknesses of Co sputtered onto Si(1 0 0) substrates by the RF sputtering system have been studied. Double-shifted loops have been observed with the thickness of Co layer in a narrow range and become single-shifted loops after some cycles of measurement. Those results are interpreted as the association of positive and negative exchange bias. 相似文献
19.
Hu Jing-guo Jin Guojun Hu An Ma Yu-qiang 《The European Physical Journal B - Condensed Matter and Complex Systems》2004,40(3):265-271
A model for the temperature dependence of exchange bias and coercivity in epitaxial ferromagnetic (FM)/ antiferromagnetic (AFM) bilayers is developed. In this model, the interface coupling includes two contributions, the direct coupling and the spin-flop coupling. The temperature dependence arises from the thermal disturbance to the system, involved in the thermal fluctuations of magnetization of AFM grains and the temperature modulation of the relevant magnetic parameters. In addition, the randomness of original orientations of easy axes of AFM grains after field cooling is taken into account. A self-consistent calculation scheme is proposed and numerical treatment is carried out. The results show that the temperature dependence of exchange bias and coercivity is closely related to the sizes of AFM grains and the interface exchange coupling constants. Especially, the exchange bias will have a peak and the blocking temperature will increase if the spin-flop coupling plays a role. On the other hand, the original orientation distribution of easy axes of AFM grains will affect exchange bias and coercivity prominently. The prediction has been well supported by experiments.Received: 12 May 2004, Published online: 31 August 2004PACS:
75.30.Et Exchange and superexchange interactions - 75.50.Ee Antiferromagnetics - 75.30.Gw Magnetic anisotropy 相似文献
20.
采用自由能极小的方法研究了铁磁/反铁磁双层膜系统在外应力场下的交换各向异性.本模型中铁磁层具有单轴磁晶各向异性和立方磁晶各向异性,而反铁磁层仅具有单轴磁晶各向异性,但其厚度趋于半无穷.理论上解析地给出了系统的等效交换偏置和钉扎角(它显示了反铁磁层对铁磁层磁化的钉扎作用)与外应力场之间的关系.数值计算表明:系统的等效交换偏置与外磁场的方向有关,而与其大小无关;然而外应力场的大小和方向均对系统的等效交换偏置有影响,其根源在于外应力场的大小和方向都影响着钉扎角.
关键词:
铁磁/反铁磁双层膜
交换偏置
钉扎角
应力场 相似文献