Quantum dot resonant tunneling FET on graphene

At this paper a field effect transistor based on graphene nanoribbon (GNR) is modeled. Like in most GNR-FETs the GNR is chosen to be semiconductor with a gap, through which the current passes at on state of the device. The regions at the two ends of GNR are highly n-type doped and play the role of metallic reservoirs so called source and drain contacts. Two dielectric layers are placed on top and bottom of the GNR and a metallic gate is located on its top above the channel region. At this paper it is assumed that the gate length is less than the channel length so that the two ends of the channel region are un-gated. As a result of this geometry, the two un-gated regions of channel act as quantum barriers between channel and the contacts. By applying gate voltage, discrete energy levels are generated in channel and resonant tunneling transport occurs via these levels. By solving the NEGF and 3D Poisson equations self consistently, we have obtained electron density, potential profile and current. The current variations with the gate voltage give rise to negative transconductance.     

Electronic properties of graphene nanoribbon doped by boron/nitrogen pair: a first-principles study

By using the first-principles calculations, the electronic properties of graphene nanoribbon (GNR) doped by boron/nitrogen (B/N) bonded pair are investigated. It is found that B/N bonded pair tends to be doped at the edges of GNR and B/N pair doping in GNR is easier to carry out than single B doping and unbonded B/N co-doping in GNR. The electronic structure of GNR doped by B/N pair is very sensitive to doping site besides the ribbon width and chirality. Moreover, B/N pair doping can selectively adjust the energy gap of armchair GNR and can induce the semimetal-semiconductor transmission for zigzag GNR. This fact may lead to a possible method for energy band engineering of GNRs and benefit the design of graphene electronic device.     

Electronic properties of Z-shaped graphene nanoribbon under uniaxial strain

Based on tight-binding approximation and a generalized Green's function method, the effect of uniaxial strain on the electron transport properties of Z-shaped graphene nanoribbon (GNR) composed of an armchair GNR sandwiched between two semi-infinite metallic armchair GNR electrodes is numerically investigated. Our results show that the increase of uniaxial strain enhances the band gap and leads to a metal-to-semiconductor transition for Z-shaped GNR. Furthermore, in the Landauer–Büttiker formalism, the current–voltage characteristics, the noise power resulting from the current fluctuations and Fano factor of strained Z-shaped GNR are explored. It is found the threshold voltage for the current and the noise power increased so that with reinforcement of the uniaxial strain parameter strength, the noise power goes from the Poisson limit to sub-Poisson region at higher bias voltages.     

Size,Shape, and Wavelength Effect on Photothermal Heat Elevation of Gold Nanoparticles: Absorption Coefficient Experimental Measurement

Complex-shaped nanoparticles as gold nanourchins (GNU) and nanorods (GNR) are very suitable agents in the case of photothermal therapy due to their photon-heat conversion ability in the red and near-infrared region (NIR). The quantification in heat generation of complex shaped nanostructures is an important key to predict the therapeutic effect of these nanoparticles. For that, the determination of the nanoparticles absorption cross section (σ_Abs) responsible for the heat generation is one of the important steps before any application. Although it is obvious to determine σ_Abs for spheres via Mie's theory, in the case of complex structures like GNU or GNR, this parameter is difficult to model. In this work, a new methodology is used to determine experimentally σ_Abs for both GNU and GNR. Experimental measurements of the photothermal properties of 100 nm size GNU and two different sizes of GNRs are studied regarding different parameters such as concentration, laser excitation wavelength, and exposure time. By using the heat transfer theory, the temperature elevation in the nanoparticles solutions is converted to temperature elevation at the nanoparticles surface and σ_Abs values are then calculated for both GNU and GNR in the NIR spectral region.     

聚吡咯修饰的金纳米棒对肿瘤的光学相干层析成像的影响

聚吡咯(PPy)制备简单、生物相容性好,且在近红外(NIR)光谱范围内有很强的吸收,可作为一种良好的光热治疗试剂;同时,其NIR光吸收性质也可用于增强光学相干层析成像(OCT)的对比效果。因此,采用PPy对传统的OCT对比试剂——金纳米棒(GNR)进行表面修饰,有望获得对比效果更好且生物毒性较小的新型OCT对比试剂。选用吡咯为起始原料,在GNR表面进行一步简单的氧化聚合反应即可制备得到PPy修饰的金纳米棒(GNR-PPy)。利用紫外-可见吸收光谱,拉曼光谱和透射电子显微镜对制备的样品进行了分析和表征。构建小鼠荷瘤模型,以研究GNR-PPy对肿瘤OCT图像对比度的增强效果。采用中心波长为840 nm的OCT系统对注射了纳米粒子的肿瘤区域进行OCT成像。结果表明,肿瘤组织注射了GNR-PPy后,OCT信号衰减非常明显;与注射了GNR的OCT图像相比,840 nm光在GNR-PPy的OCT图像中的穿透深度明显更低。从OCT图像中抽提出一维的衰减曲线对OCT图像进行定量分析,发现注射有GNR-PPy肿瘤组织的OCT信号衰减系数明显高于注射了GNR的组织。表明,相对于GNR,GNR-PPy具有更好的OCT信号对比效果,这在增强肿瘤成像效果方面具有潜在应用价值。     

Electronic transport properties of metallic graphene nanoribbons with two vacancies

We studied theoretically the electronic transport of metallic graphene nanoribbons (GNRs) with two vacancies using the tight-binding model and Green’s function method. The results show that the conductance of zigzag GNR (ZGNR) varies with the relative position of two vacancies. However, when two vacancies reside on the edges, the conductance remain unchanged compared to that of perfect GNRs due to the interaction between vacancy state and edge state. Moreover, the conductance at the Fermi level for armchair GNR (AGNR) can be zero or finite depending on the position of vacancies on the GNRs. The demonstrated features of electronic transport open extremely attractive perspectives for designing well-defined GNR-based nanoelectronic devices.     

Electronic and magnetic properties of copper-family-element atom adsorbed graphene nanoribbons with zigzag edges

We have investigated the electronic and magnetic properties of copper-family-element (CFE) atom adsorbed graphene nanoribbons (GNRs) with zigzag edges using first-principles calculations based on density functional theory. We found that CFE atoms energetically prefer to be adsorbed at the edges of nanoribbons. Charges are transferred between the CFE atom and carbon atoms at the edge, which reduce the local magnetic moment of carbon atoms in the vicinity of adsorption site and change the electronic structure of GNRs. As a result, Cu adsorbed zigzag GNR is a semiconductor with energy band gap of 0.88 eV in beta-spin and energy gap of 0.22 eV in alpha-spin, while Ag adsorbed zigzag GNR and Au adsorbed zigzag GNR are both half-metallic with the energy gaps of 0.68 eV and 0.63 eV in beta-spin, respectively. These results show that CFE atom adsorbed zigzag GNRs can be applied in nanoelectronics and spintronics.     

Magnetoelastic Instability of a Long Graphene Nano-Ribbon Carrying Electric Current

This paper aims at investigating the resonance frequencies and stability of a long Graphene Nano-Ribbon (GNR) carrying electric current. The governing equation of motion is obtained based on the Euler-Bernoulli beam model along with Hamilton's principle. The transverse force distribution on the GNR due to the interaction of the electric current with its own magnetic field is determined by the Biot-Savart and Lorentz force laws. Using Galerkin's method, the governing equation is solved and the effect of current strength and dimensions of the GNR on the stability and resonance frequencies are investigated.     

Electronic transport for pristine and doped crossed graphene nanoribbon junctions with zigzag interfaces

Using the fully self-consistent non-equilibrium Green?s function (NEGF) method combined with density functional theory, we investigate numerically the electronic transport property for pristine and doped crossed graphene nanoribbon (GNR) junctions. It is demonstrated that in the case of zigzag interfaces, the I–V characteristics of the junction with or without doping always show semiconducting behavior, which is different from that in the case of armchair interfaces [Zhou, Liao, Zhou, Chen, Zhou, Eur. Phys. J. B 76 (2010) 421]. Interestingly, negative differential resistance (NDR) behavior can be clearly observed in a certain bias region for nitrogen-doped shoulder crossed junction. A mechanism for the NDR behavior is suggested.     

Specific heat of graphene nanoribbons

We studied the specific heat of graphene nanoribbons (GNRs) using an extended force constant model. We found that at low temperature, the specific heat decreases, and its variation with temperature increases with increasing GNR width. However, the specific heat increases with increasing GNR width after crossing a chaotic region. Free boundary conditions, -CHOH-terminated and armchair-edge-induced phonon nondegeneracy, shift and distortion and localized vibrational modes significantly influence GNR specific heat compared with periodic boundary conditions and bare and zigzag edges in GNRs. Finally, we found a uniform expression for specific heat vs. width at every temperature except for the chaotic region.     

Resonant transport and quantum bound states in Z-shaped graphene nanoribbons

We study the transport properties of a Z-shaped graphene nanoribbon (GNR). It is found that the quasibound states in the Z-shaped junction induce resonant peaks around the Dirac point in the conductance profile. The resonant transmission via the quantum bound state is very sensitive to the size of the junction. The number and also the lifetimes of the quasibound states increase with the size of the Z-shaped junction. Long lifetime bound states which do not induce obvious resonant peaks exist in the junction with a wider or longer zigzag edged GNR. The resonant characteristics of the Z-shaped GNR can be tuned by the variation of the geometrical size.     

Effect of thallium impurities in the DAMA experiment on the allowed parameter space for inelastic dark matter

The inelastic dark matter scenario was proposed to reconcile the DAMA annual modulation with null results from other experiments. In this scenario, weakly interacting massive particles (WIMPs) scatter into an excited state, split from the ground state by an energy δ comparable to the available kinetic energy of a galactic WIMP. We note that for large splittings δ the dominant scattering at DAMA can occur off of thallium nuclei, with A～205, which are present as a dopant at the 10(-3) level in NaI(Tl) crystals. For a WIMP mass mχ≈100 GeV/c2 and δ≈200 keV, we find a region in δ-mχ-parameter space which is consistent with all experiments. These parameters, in particular, can be probed in experiments with thallium in their targets, such as KIMS, but are inaccessible to lighter target experiments. Depending on the tail of the WIMP velocity distribution, a highly modulated signal may or may not appear at CRESST-II.     

An ab initio study on the effect of junctions on transport characteristics of nitrogen and aluminum mixed chain

We have studied the effect of junctions on transport characteristics of Nitrogen and Aluminum (AlN)_n (n represents the number of “AlN” units) mixed chain between Al (100) electrodes by using the first-principle based on density functional theory and non-equilibrium Green's function in this paper. From the results of the study, the longer the atomic chain, the weaker the coupling between the atom chain and the electrodes. When n?>?2, the equilibrium conductance in Fermi level is very small and tends to zero, in a non-conducting state. In the case of bias, when the bias voltage increases, the resonance transmission peaks move from the Fermi level. When the bias is increased to 4?V, the device is in the cut-off in the energy region of -2–0?eV, there are several resonant transmittance peaks at the same time in the energy region of 0–2?eV, showing a good diode behavior.     

Effects of edge chemistry doping on graphene nanoribbon mobility

Doping of semiconductor is necessary for various device applications. Exploiting chemistry at its reactive edges was shown to be an effective way to dope an atomically thin graphene nanoribbon (GNR) for realizing new devices in recent experiments. The carrier mobility limited by edge doping is studied as a function of the GNR width, doping density, and carrier density by using ab initio density functional and parameterized tight binding simulations combined with the non-equilibrium Green's function formalism for quantum transport. The results indicate that for GNRs wider than about 4 nm, the mobility scales approximately linearly with the GNR width, inversely proportional to the edge doping concentration and decreases for an increasing carrier density. For narrower GNRs, dependence of the mobility on the GNR width and carrier density can be qualitatively different.     

Numerical study of localization length in disordered graphene nanoribbons

In this work, we study quantum transport properties of a defective graphene nanoribbon (DGNR) attached to two semi-infinite metallic armchair graphene nanoribbon (AGNR) leads. A line of defects is considered in the GNR device with different configurations, which affects on the energy spectrum of the system. The calculations are based on the tight-binding model and Green’s function method, in which localization length of the system is investigated, numerically. By controlling disorder concentration, the extended states can be separated from the localized states in the system. Our results may have important applications for building blocks in the nano-electronic devices based on GNRs.     

Edge-modified zigzag-shaped graphene nanoribbons: Structure and electronic properties

Control of the band gap of graphene nanoribbons is an important problem for the fabrication of effective radiation detectors and transducers operating in different frequency ranges. The periodic edge-modified zigzag-shaped graphene nanoribbon (GNR) provides two additional parameters for controlling the band gap of these structures, i.e., two GNR arms. The dependence of the band gap E _g on these parameters is investigated using the π-electron tight-binding method. For the considered nanoribbons, oscillations of the band gap E _g as a function of the nanoribbon width are observed not only in the case of armchair-edge graphene nanoribbons (as for conventional graphene nanoribbons) but also for zigzag GNR edges. It is shown that the change in the band gap E _g due to the variation in the length of one GNR arm is several times smaller than that due to the variation in the nanoribbon width, which provides the possibility for a smooth tuning of the band gap in the energy spectrum of the considered graphene nanoribbons.     

Concept of infrared photodetector based on graphene–graphene nanoribbon structure

We study the mechanisms of photoconductivity in graphene layer–graphene nanoribbon–graphene layer (GL–GNR–GL) structures with the i-type gapless GL layers as sensitive elements and I-type GNRs as barrier elements. The effects of both an increase in the electron and hole densities under infrared illumination and the electron and hole heating and cooling in GLs are considered. The device model for a GL–GNR–GL photodiode is developed. Using this model, the dark current, photocurrent, and responsivity are calculated as functions of the structure parameters, temperature, and the photon energy. The transition from heating of the electron–hole plasma in GLs to its cooling by changing the incident photon energy can result in the change of the photoconductivity sign from positive to negative. It is demonstrated that GL–GNR–GL photodiodes can be used in effective infrared and terahertz detectors operating at room temperature. The change in the photoconductivity sign can be used for the discrimination of the incident radiation with the wavelength 2–3 μm and 8–12 μm.     

Molecular dynamics simulation study on mechanical responses of nanoindented monolayer-graphene-nanoribbon

We investigated the mechanical responses of the nanoindented graphene-nanoribbon (GNR)-resonator using classical molecular dynamics simulations. The nanoindented force in this work was applied to the GNR's local point and then, GNR-resonator's frequency could be tuned by a nanoindented depth. We found the hardening or the softening of the GNR during its nanoindented-deflections, and such properties were recognized by the shift of the resonance frequency. The linear elastic regime in low applied force is explicitly separated with the non-linear elastic regime in high applied force. In particular, at the threshold point, a very small change of the nanoindented depth can cause great change in the resonance frequency, and this property can enable the GNR to be applied to electromechanical relay switching devices and the quantum-computer in quantum-mechanical coupling as well as mass detectors, pressure sensors, accelerometers, and alarms.     

石墨烯纳米带量子点中的量子混沌现象

在20 mK的极低温下测量了石墨烯纳米带量子点的电子输运性质,观测到清晰的库仑阻塞菱形块和对应量子点激发态的电导峰.对库仑阻塞近邻电导峰间距和峰值进行了统计分析,发现其统计分布分别满足无规矩阵理论描述的Wigner-Dyson分布和Porter-Thomas分布,说明石墨烯纳米带量子点在低温下出现了量子混沌现象.还讨论了这种长方形量子点中量子混沌的可能成因. 关键词： 石墨烯纳米带 量子点 库仑阻塞 量子混沌     

Ultrasensitive terahertz/infrared waveguide modulators based on multilayer graphene metamaterials

This paper studies and classifies the electromagnetic regimes of multilayer graphene‐dielectric artificial metamaterials in the terahertz/infrared range. The employment of such composites for waveguide‐integrated modulators is analysed and three examples of novel tunable devices are presented. The first one is a modulator with excellent ON‐state transmission and very high modulation depth: >38 dB at 70 meV graphene's electrochemical potential (Fermi energy) change. The second one is a modulator with extreme sensitivity towards graphene's Fermi energy ‐ a minute 1 meV variation of the latter leads to >13.2 dB modulation depth. The third one is a tunable waveguide‐based passband filter. The narrow‐band cut‐off conditions around the ON‐state allow the latter to shift its central frequency by 1.25% per every meV graphene's Fermi energy change.