Infrared reflection studies of ceramics: characterization of SiC layers on graphite substrates

Summary Technical CVD-grown silicon carbide (-SiC) layers on graphite substrates have been studied by infrared spectroscopy. Specular reflectance spectra were measured at oblique incidence, and for the same experimental conditions such spectra were simulated starting from oscillator parameters which basically determine the optical behaviour of the material. Both the roughness of the surface and the roughness of the interface within the coated material, have considerable influence on the spectra. Modelling these zones as gradient layers on the basis of effective-medium approximations, convincing agreement between experiment and simulation can be obtained. In this way the effective dielectric function of the layer, as well as its thickness, are derived. Certain features within the reststrahlen band can be assigned to the excitation of surface phonons which strongly depend on the morphology of the layer.     

XRD-Studies of SiC/Si layers on carbon substrates

Structural investigations of thin films of SiC, SiC with free silicon and various titanium suicides (TiSi₂, TiSi and Ti₅Si₃) are described. The crystal phases have been identified using X-ray diffractometry. The growth of reaction products from surface reactions between silicon and deposited titanium can be observed.Dedicated to Professor Dr. rer.nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthday     

Thermal behaviour of advanced composite materials based on SiC fibres

Emanation thermal analysis (ETA) was used for characterization of thermal behaviour of SiC_f/SiC composites on heating in argon and air, respectively. Effect of gas environment (argon, air) and helium ions implantation on the microstructure development of the SiC_f/SiC composite prepared by chemical vapour infiltration (CVI) from Nicalon CG fibres was investigated under in situ conditions of heating. The annealing of near surface structure irregularities was observed in the range 280-700°C and evaluated by means of the mathematical model, assuming that the structure irregularities served as diffusion paths for radon. The ETA reflected the formation of amorphous silica and its subsequent crystallization to crystoballite. Morphology of the SiC_f/SiC samples before and after the heat treatments was characterized by means of SEM. This revised version was published online in July 2006 with corrections to the Cover Date.     

C60 on SiC nanomesh

A SiC nanomesh is used as a nanotemplate to direct the epitaxy of C60 molecules. The epitaxial growth of C60 molecules on SiC nanomesh at room temperature is investigated by in situ scanning tunneling microscopy, revealing a typical Stranski-Krastanov mode (i.e., for the first one or two monolayers, it is a layer-by-layer growth or 2-D nucleation mode; at higher thicknesses, it changes to island growth or a 3-D nucleation mode). At submonolayer (0.04 and 0.2 ML) coverage, C60 molecules tend to aggregate to form single-layer C60 islands that mainly decorate terrace edges, leaving the uncovered SiC nanomesh almost free of C60 molecules. At 1 ML C60 coverage, a complete wetting layer of hexagonally close-packed C60 molecules forms on top of the SiC nanomesh. At higher coverage from 4.5 ML onward, the C60 stacking adopts a (111) oriented face-centered-cubic (fcc) structure. Strong bright and dim molecular contrasts have been observed on the first layer of C60 molecules, which are proposed to originate from electronic effects in a single-layer C60 island or the different coupling of C60 molecules to SiC nanomesh. These STM molecular contrast patterns completely disappear on the second and all the subsequent C60 layers. It is also found that the nanomesh can be fully recovered by annealing the C60/SiC nanomesh sample at 200 degrees C for 20 min.     

Interpretation of Auger depth profiles of thin SiC layers on Si

Silicon carbide thin films, prepared by carbonization of Si-wafers are analysed by Auger depth profiling. The influence of atomic mixing is simulated with a Monte Carlo model. By using mixing simulations the dependence of the two mixing parameters (width of the mixing zone and recoil depth) on ion beam energy, incidence angle and ion mass can be calculated. For comparison of the simulated data with Auger measurements an Auger electron escape depth correction is necessary. The simulated and -corrected data of several layer structures show good qualitative agreement with Auger depth profiles of thin carbonized SiC-layers.Dedicated to Professor Dr. rer. nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthday     

Analytical characterization of coated carbon fibres

Summary Carbon fibres must be coated with a barrier layer in their application as reinforcement in metal matrix composites (MMC) to avoid reactions between the matrix and carbon. Materials frequently used are SiC, pyrolytical carbon or these materials in combination. The reactivity between the metallic matrix and the barrier layer depends on the stoichiometry and structure of the barrier material. XPS and AES are suitable methods for the investigation of the surface and of composition of the layer of the coated fibres. Additionally Raman-spectroscopy has been used to aid the distinction between the bonding states of carbon in the barrier layer and the fibre. The problems of the analysis of small, fibre-like materials are discussed.     

Grazing incidence X-ray diffraction analysis of surface modified SiC layers

Thin films of silicon carbide with codeposited elemental silicon were prepared by chemical vapor deposition (CVD). In a second CVD-process a thin titanium layer was deposited on the SiC(Si) basic layer. The solid state reaction between titanium and the codeposited silicon can be observed by X-ray diffractometry. A helpful analytical method for the observation of the growth of the reaction products is grazing incidence X-ray diffractometry. Various diffraction patterns of titanium silicides can be obtained by decreasing incidence angles. Received: 24 June 1996 / Accepted: 5 December 1996     

Generation and characterization of surface layers on acoustically levitated drops

Surface layers of natural and technical amphiphiles, e.g., octadecanol, stearic acid and related compounds as well as perfluorinated fatty alcohols (PFA), have been investigated on the surface of acoustically levitated drops. In contrast to Langmuir troughs, traditionally used in the research of surface layers at the air-water interface, acoustic levitation offers the advantages of a minimized and contact-less technique. Although the film pressure cannot be directly adjusted on acoustically levitated drops, it runs through a wide pressure range due to the shrinking surface of an evaporating drop. During this process, different states of the generated surface layer have been identified, in particular the phase transition from the gaseous or liquid-expanded to the liquid-condensed state of surface layers of octadecanol and other related amphiphiles. Characteristic parameters, such as the relative permeation resistance and the area per molecule in a condensed surface layer, have been quantified and were found comparable to results obtained from surface layers generated on Langmuir troughs.     

Initial formation of contact layers on Ni/SiC samples studied by XPS

This study deals with the quantitative assessment of the coverage and thickness of Ni silicide films formed during annealing of SiC substrates with sputtered thin films of Ni. The analytical approach involves the use of XPS and depth profiling by means of successive ion etchings and XPS analyses. For either 3 or 6 nm initial Ni film thickness, a 10 nm Ni₂Si product is formed. On top of this product, the C released is accumulated in a very thin (1–2 nm) film. In neither case, the Ni₂Si covers the whole surface, although the coverage is almost complete (～90%) in the latter case. For the greater initial Ni‐film thickness of 17 nm, the thickness of the Ni₂Si product corresponds well to the value of 25 nm expected from the Ni/Ni₂Si stoichiometric relationship. This thickness is significantly greater than a critical level and the film covers the whole surface. Carbon is similarly accumulated in a very thin layer on the top surface, although the major part of C (～70%) is found inside the main reaction product layer. Copyright © 2008 John Wiley & Sons, Ltd.     

Surface- and microanalytical characterization of ion-implanted Si-C-N layers

The development of production methods for carbonitridic hard coatings needs information on depth distributions of the layer components as well as on stoichiometries and binding states of the layer constituents. Si-C-N samples were produced by implanting ¹³C- and ¹⁵N-ions into c-Si <111>, and the implanted layers were investigated by means of NRA depth profiling. Afterwards several samples were characterized by surface analytical techniques, and XPS- and AES depth profiles were measured for typical samples. The measurements confirm the NRA depth profiles and stoichiometries. Furthermore, in all depth ranges C 1s- and N 1s binding energies are observed which are consistent with those of carbonitrides.     

Surface and in-depth characterization of TiC/C and Ti(C,N) layers by means of AES and Factor Analysis

Magnetron sputtered TiC/C multilayers and Plasma Vapour Deposited Ti(C,N) layers have been investigated by AES. The carbon sensivity factor has been calibrated for the correct composition of a TiC standard sample. Nitrogen has been measured indirectly based on the Ti_L3M23M23/Ti_L3M23V peak area ratio in the direct EN(E) spectrum using Ti, TiC and TiN standard samples. The influence of Tougaard background removal has been tested. As the less accurate method taking the Ti peak-to-peak ratio has been found to give adequately good results. It has been possible to recalculate AES depth profiles, where only peak-to-peak values and no peak areas in the direct spectrum are available. Factor Analysis has been applied to AES depth profiling results. The data matrix in each column contains the linked experimental spectra of the measured elements. Based on the standard spectra the main components of a TiN layer on silicon have been identified by Factor Analysis. The structure of a TiC/C multilayer system has been resolved by the characteristic C_KLL peak shape in C and TiC. Factor Analysis enables to calculate the individual profiles for Ti, TiC and C.     

Surface and in-depth characterization of TiC/C and Ti(C,N) layers by means of AES and Factor Analysis

Magnetron sputtered TiC/C multilayers and Plasma Vapour Deposited Ti(C,N) layers have been investigated by AES. The carbon sensivity factor has been calibrated for the correct composition of a TiC standard sample. Nitrogen has been measured indirectly based on the Ti(L3M23M23)/Ti(L3M23V) peak area ratio in the direct E.N(E) spectrum using Ti, TiC and TiN standard samples. The influence of Tougaard background removal has been tested. As the less accurate method taking the Ti peak-to-peak ratio has been found to give adequately good results. It has been possible to recalculate AES depth profiles, where only peak-to-peak values and no peak areas in the direct spectrum are available. Factor Analysis has been applied to AES depth profiling results. The data matrix in each column contains the linked experimental spectra of the measured elements. Based on the standard spectra the main components of a TiN layer on silicon have been identified by Factor Analysis. The structure of a TiC/C multilayer system has been resolved by the characteristic C(KLL) peak shape in C and TiC. Factor Analysis enables to calculate the individual profiles for Ti, TiC and C.     

SIMS-analysis on B, N, and C containing layers

B, N, and C containing layers produced by the “Chemical Vapour Deposition” (CVD) method were investigated by SIMS in respect of their elemental composition and impurities. The atomic B/N ratios found are between 1:0.15 and 1:0.46 referred to an h-BN powder (B/N = 1:1 supposed) as reference material. The carbon content was 5 to 12 at-%, additional H and O impurities were detected. Dependencies of the film composition on process parameters and the problems occurring during SIMS measurements of such layers are discussed.     

Ion‐beam synthesis of 3C‐SiC surface layers on silicon

The attempt to grow 3C‐SiC thin films on silicon substrates has become an area of significant scientific interest, largely as a consequence of the impressive electrical properties that this polytype displays. In this paper, we have utilized low‐energy (20 keV) high‐fluence carbon implantation and a subsequent annealing step to form layers of 3C‐SiC directly on a silicon surface, and have investigated the effect of implantation fluence on the resultant materials properties. The quality of the Si/SiC interface is shown to be highly fluence‐dependent, with the formation of voids decreasing significantly with increased fluence. The conversion of carbon into 3C‐SiC is found to be most efficient at near‐stoichiometric concentrations, while at higher implantation fluences clusters of excess carbon are discovered to form within the silicon and to diffuse to the surface of the grown 3C‐SiC layer upon annealing. Copyright © 2011 John Wiley & Sons, Ltd.     

Design, synthesis and characterization of monomolecular interfacial layers

We have designed a series of monomolecular films comprised of four basic structural motifs. We have used these films for a variety of purposes, ranging from support structures for chromophore arrays to the creation of selective and biomimetic interfaces. We will discuss the several different types of interfacial binding chemistry that are used in the construction of these interfacial films, for both monomeric and polymeric layer structures. Following a discussion of the construction of the adlayers, we describe several uses of these assemblies, in areas ranging from adsorption to optical signal processing, and the formation of biomimetic interfacial structures.     

Theoretical characterization of the SiC3H- anion

Highly correlated ab initio methods are used to predict the equilibrium structures and spectroscopic parameters of the SiC(3)H(-) anion. The total energies and physical properties are reported using CASSCF/MRCI, RCCSD(T), and RCCSD(T)-F12 approaches and extended basis sets. The search of stable geometries leads to a total of 12 isomers (4 linear and 8 cyclic), for which electronic ground states have close-shell configurations. The stability of the linear form, l-SiC(3)H(-), is prominent. For the most stable linear isomer, the B(e) equilibrium rotational constant has been calculated with RCCSD(T) and a complete basis set. Core-correlation and vibrational effects have been taken into account to predict a B(0) of 2621.68 MHz for l-SiC(3)H(-) and 2460.48 MHz for l-SiC(3)D(-). The dipole moment of l-SiC(3)H(-) was found to be 2.9707 D with CASSCF/aug-cc-pV5Z and the electron affinity to be 2.7 eV with RCCSD(T)-F12A/aug-cc-pVTZ. Anharmonic spectroscopic parameters are derived from a quadratic, cubic, and quartic RCCSD(T)-F12A force field and second order perturbation theory. CASSCF/MRCI vertical excitations supply three metastable electronic states, (1)Σ(+) (3)Σ(+) and (3)Δ. Electron affinities calculated for a series of chains type SiC(n)H and SiC(n) (n=1-5) allow us to discuss the anion formation probabilities.