Design and manufacture of planar GaAs Gunn diode for millimeter wave application

GaAs-based planar Gunn diodes with AlGaAs hot electron injector have been successfully developed to be used as a local oscillator of 76 GHz in monolithic millimeter-wave integrated circuits.We designed two kinds of structure diode,one has a fixed distance between the anode and cathode,but has variational cathode area,the other has a fixed cathode area,but has different distances between two electrodes.The fabrication of Gunn diode is performed in accordance with the order of operations:cathode defining,mesa etching,anode defining,isolation,passivation,via hole and electroplating.A peak current density of 29.5 kA/cm 2 is obtained.And the characteristics of negative differential resistance and the asymmetry of the current-voltage curve due to the AlGaAs hot electron injector are discussed in detail.It is demonstrated that the smaller size of active area corresponds to the smaller current,and the shorter distance between anode and cathode also corresponds to the lower threshold voltage and higher peak current,and hot electron injector can effectively enhance the radio frequency conversion efficiency and output power.     

The design and manufacture of a notch structure for a planar InP Gunn diode

A planar InP-based Gunn diode with a notch doping structure is designed and fabricated for integration into millimeter-wave and terahertz integrated circuits.We design two kinds of InP-based Gunn diodes.One has a fixed diameter of cathode area,but has variable spacing between anode and cathode;the other has fixed spacing,but a varying diameter.The threshold voltage and saturated current exhibit their strong dependences on the spacing(10 μm-20 μm) and diameter(40 μm-60 μm) of the InP Gunn diode.The threshold voltage is approximately 4.5 V and the saturated current is in a range of 293 mA-397 mA.In this work,the diameter of the diode and the space between anode and cathode are optimized.The devices are fabricated using a wet etching technique and show excellent performances.The results strongly suggest that low-cost and reliable InP planar Gunn diodes can be used as single chip terahertz sources.     

Investigation of chlorine-based etchants in wet and dry etching technology for an InP planar Gunn diode

Mesa etching technology is considerably important in the Gunn diode fabrication process. In this paper we fabricate InP Gunn diodes with two different kinds of chlorine-based etchants for the mesa etching for comparative study. We use two chlorine-based etchants, one is HCl-based solution (HCl/H 3 PO 4 ), and the other is Cl 2 -based gas mixture by utilizing inductively coupled plasma system (ICP). The results show that the wet etching (HCl-based) offers low cost and approximately vertical sidewall, whilst ICP system (Cl 2 -based) offers an excellent and uniform vertical sidewall, and the over-etching is tiny on the top and the bottom of mesa. And the fabricated mesas of Gunn diodes have average etching rates of ～ 0.6 μm/min and ～ 1.2 μm/min, respectively. The measured data show that the current of Gunn diode by wet etching is lower than that by ICP, and the former has a higher threshold voltage. It provides a low-cost and reliable method which is potentially applied to the fabrication of chip terahertz sources.     

新的高能注量电子束二极管系统

 为“闪光二号”加速器研制了新的二极管系统, 其电子束能注量比原二极管系统大3倍多。该系统由带滑闪开关的二极管、漂移管、脉冲磁场和真空靶室等部分组成, 通过减小阴极直径、增大轴向磁场强度和磁透镜比,调节滑闪开关距离和预脉冲开关气压等技术措施, 使二极管具有高能注量电子束输出的稳定工作状态, 在Marx发生器充电电压70kV条件下,在距阴极22cm的靶上获得了总能量21.5kJ、束斑直径52mm和能注量1.01kJ/cm²的电子束输出。     

2MeV注入器脉冲电子束时间分辨能谱诊断研究

介绍了利用磁分析器和电子束产生的契伦科夫辐射光诊断直线感应加速器脉冲电子束时间分辨能谱的原理、方法及诊断系统,对中物院2MeV感应叠加型注入器的2kA强流脉冲电子束时间分辨能谱进行实验诊断,并与二极管电压进行对比分析。测得能量约2.2MeV,60ns内最大能量变化为4%。     

2MeV注入器脉冲电子束时间分辨能谱诊断研究

 介绍了利用磁分析器和电子束产生的契伦科夫辐射光诊断直线感应加速器脉冲电子束时间分辨能谱的原理、方法及诊断系统,对中物院2MeV感应叠加型注入器的2kA强流脉冲电子束时间分辨能谱进行实验诊断,并与二极管电压进行对比分析。测得能量约2.2MeV,60ns内最大能量变化为4%。     

强流电子束二极管等离子体光学诊断

通过处理强流电子束加速器主开关导通之后所形成的高压电脉冲,得到了二极管等离子体光学诊断的同步时间基准。采用高压电脉冲延时结合二极管等离子体光信号延时的方案,实现了相机曝光过程与等离子体发光过程的ns级精度同步。综合采取屏蔽、滤波等措施,实现了整个系统的电磁兼容,最终稳定地拍摄到了ns时间分辨的二极管等离子体发光过程。     

低阻抗强流箍缩电子束二极管的3阶段电子束流模型

 在顺位流模型与“4阶段”粒子流动模型的基础上,提出了一种用于分析100ns／MA级电子束流的低阻抗强箍缩二极管物理过程的理论模式。在这种理论分析模式中,将电子和离子的流动情况随时间的演变过程分成非箍缩电子流、弱箍缩电子流、强箍缩电子流3个不同的阶段,分别结合聚焦流和顺位流模型对各个阶段特性进行估算。利用KARAT PIC数值模拟软件并结合“强光一号”加速器的工作状态,对该类型二极管中电子束的流动过程作了数值模拟,并在“强光一号”加速器上开展了实验研究。数值模拟和实验结果的对比表明,所提出的新的理论分析模式是合理可行的 。     

A new design of pulsed laser diode driver system for multistate quantum key distribution

In this paper, we describe a new design of laser diode driver system based on MOSFET current mirror and digital signal controller (DSC). The system is designed to emit stream pairs of photons from three semiconductor laser diodes. The DSC is able to switch between the three laser diodes at constant rate. The duty cycle is maintained at 1% in order to reduce its thermal effect and thus prolong the laser diodes’ life cycles. The MOSFET current mirror circuits are capable of delivering constant modulation current with peak current up to 58 mA to each laser diode. This laser driver system will allow the generating biphotons automatically with qubit rate around 8-13% for μ less than or equal to 1, thus making it practical for six-states quantum key distribution implementation.     

Numerical model of electron injector for a traveling-wave tube based on a coupled-cavity chain

A 2.5D numerical model of electron injector has been developed taking into account the thermal-electron velocities at the cathode. Three modes of operation are considered for hot-cathode diodes: initial-current, space-charge-limited current, and emission-current-saturation modes. The simulation results are compared with the measured current-temperature and current-voltage characteristics of injector for a traveling-wave tube based on a coupled-cavity chain.     

Projected spin functions for many electron systems

The krypton potentials of Barker et al., Buck et al., Gough et al. (Maitland and Smith (n-6)) and Thakkar and Smith (MIST 2C and 6B) are compared as to their ability to predict dilute gas properties (second virial, viscosity, self-diffusion and thermal conductivity coefficients and thermal diffusion factors). The potentials of Barker et al. and Buck et al. and Gough et al. (MS) accurately predict these properties almost equally. The MIST potentials do not fare quite so well. The isotopic thermal diffusion factor, the dilute gas property most sensitive to the shape of the potential, is best described by the Buck et al. and MS potentials. An analysis of this property suggests the correctness of the slope of the repulsive wall of these potentials.     

Hot electron streaming and population inversion for polar and deformation scattering

Comparison of hot electron phenomena under polar (n-GaAs) and deformation (p-Ge) inelastic optical phonon scattering is made on the basis of analytical calculation and numerical simulation by the Monte-Carlo method. The difference in the character of drift velocity saturation in these materials is demonstrated. It is shown that population inversion of hot carriers in crossed E ⊥ B fields provides negative magnetoresistance and may give rise (in p-Ge) even to NDC. It is shown that in p-Ge in crossed fields overpopulation of the light hole band arises which can strongly affect J-E characteristics and can result in amplification of FIR radiation.     

Narrow bandwidth interference filter-stabilized diode laser systems for the manipulation of neutral atoms

We present and investigate different external cavity diode laser (ECDL) configurations for the manipulation of neutral atoms, wavelength-stabilized by a narrow-band high transmission interference filter. A novel diode laser, providing high output power of more than 1 W, with a linewidth of less than 85 kHz, based on a self-seeded tapered amplifier chip has been developed. Additionally, we compare the optical and spectral properties of two laser systems based on common laser diodes, differing in their coating, as well as one, based on a distributed-feedback (DFB) diode. The linear cavity setup in all these systems combines a robust and compact design with a high wavelength tunability and an improved stability of the optical feedback compared to diode laser setups using diffraction gratings for wavelength discrimination.     

Hot electron temperature and coupling efficiency scaling with prepulse for cone-guided fast ignition

The effect of increasing prepulse energy levels on the energy spectrum and coupling into forward-going electrons is evaluated in a cone-guided fast-ignition relevant geometry using cone-wire targets irradiated with a high intensity (10(20) W/cm(2)) laser pulse. Hot electron temperature and flux are inferred from Kα images and yields using hybrid particle-in-cell simulations. A two-temperature distribution of hot electrons was required to fit the full profile, with the ratio of energy in a higher energy (MeV) component increasing with a larger prepulse. As prepulse energies were increased from 8 mJ to 1 J, overall coupling from laser to all hot electrons entering the wire was found to fall from 8.4% to 2.5% while coupling into only the 1-3 MeV electrons dropped from 0.57% to 0.03%.     

Prospects of developing multibeam systems for low-voltage electron lithography

The prospects of developing tiny multibeam systems for electron lithography have been considered. Designs of tiny basic elements of electron-optical systems, including a magnetic lens with an open magnetic circuit and a lens with aligned axially symmetric fields (whose magnetic circuit simultaneously plays the role of electrodes of an electrostatic lens), are represented, as well as their analysis. The results of the investigation of high-speed one-turn deflection systems without or with a core and the analysis of a stigmator are reported. Radically new approaches to design of tiny electron-optical systems have been considered, which make it possible to increase the efficiency of electron beam formation and pass to micro-and nanotechnological design of vacuum microsystems.     

Monotonicity of ionization energies for three electron lithium-type systems

Although it is quite obvious that an increasing amount of energy is required to remove more and more electrons from an atom, the proof of this observation seems to be a remarkably difficult problem in mathematical physics. Here, by using well-known energy bounds, we show the monotonicity of ionization energies for the simplest nontrivial system, i.e., a nucleus (with infinite mass) and three electrons, which physically corresponds to ionization in the lithium isoelectronic series via the para-channel.PHYMAT, Dept. de math. Univ. de Toulon et du Var F-83130 La Garde, France.On leave from Stranski Institut, TEL 33 Tech. Univ. Berlin D-1000 Berlin 10, F.R.G.Laboratoire propre du Centre Nationale de la Recherche Scientifique.     

Development of compact compensation systems for magnetic electron spectrometers

A radically new version of a system for compensating external magnetic fields in magnetic electron spectrometers is proposed. The main difference of the proposed system is that it, being fairly small, forms a highly uniform compensating magnetic field not in the central region of the instrument, as is generally done, but in the region of motion of analyzed electrons.