FDTD法对二维正方格子光子晶体带隙的数值计算

通过optiFDTD模拟软件对二维椭圆柱构造的正方格子光子晶体的禁带特性进行了数值模拟。分别研究了在空气中椭圆介质(Ge,Si,GaAs)柱和在介质(Ge,Si,GaAs)中椭圆空气柱构造的二维正方格子光子晶体中椭圆柱的横轴半径和纵轴半径的大小,以及椭圆柱的不同旋转角度对光子禁带的影响;并计算出了在上述两种情况下的空气和介质中的最优结构参数。     

石墨点阵柱状光子晶体共振腔的温度特性

构造了一种二维GaAs石墨点阵柱状光子晶体共振腔. 利用时域有限差分方法计算了这种光子晶体共振腔TE_y模的共振峰随温度变化的情况. 计算结果表明这种结构的光子晶体共振腔的共振峰主峰随温度呈分段线性变化趋势,且具有1.60 nm/℃以上的温度响应灵敏度. 同时,计算结果显示,这种结构的光子晶体共振腔具有很好的频率开关特性. 最后,利用计算结果解释了频率开关特性的成因. 关键词： 光子晶体 温度 共振腔 开关     

Decay lifetime and evolution of semiconductor quantum dots in photonic crystals

Spontaneous emission from GaAs/AlGaAs quantum dots (QDs) embedded in photonic crystals with a narrow photonic band gap is studied theoretically. The results show that the decay lifetime is very sensitive to the sizes of QDs, and both inhibited and accelerated emission can occur, which had been indicated in a previous experiment. The Weisskopf–Wigner approximation, good for atoms and molecules, may be incorrect for QDs. A damped Rabi oscillation of the excited state with the transition frequency outside the photonic band gap may appear, which is impossible for atoms and molecules.     

高频区具有大带隙的二维像素型光子晶体结构

针对方块像素组成的二维光子晶体，传统平面波展开法可经修正使之收敛速度大大提高。采用快速算法，在高频区域找到了一种具有稳定的较大绝对禁带宽度的GaAs光子晶体结构，绝对禁带宽度为0．0995ωc(ωc-2π／α，α为晶格常量，c为光速)，中心频率为1．2625ω。     

Pressure, temperature and plasma frequency effects on the band structure of a 1D semiconductor photonic crystal

In this work using the transfer-matrix formalism we study pressure, temperature and plasma frequency effects on the band structure of a 1D semiconductor photonic crystal made of alternating layers of air and GaAs. We have found that the temperature dependence of the photonic band structure is negligible, however, its noticeable changes are due mainly to the variations of the width and the dielectric constant of the layers of GaAs, caused by the applied hydrostatic pressure. On the other hand, by using the Drude's model, we have studied the effects of the hydrostatic pressure by means of the variation of the effective mass and density of the carriers in n-doped GaAs, finding firstly that increasing the amount of n-dopants in GaAs, namely, increasing the plasma frequency, the photonic band structure is shifted to regions of higher frequencies, and secondly the appearance of two regimes of the photonic band structure: one above the plasma frequency with the presence of usual Bragg gaps, and the other, below this frequency, where there are no gaps regularly distributed, with their width diminishing with the increasing of the plasma frequency as well as with the appearance of more bands, but leaving a wide frequency range in the lowest part of the spectrum without accessible photon states. Also, we have found characteristic frequencies in which the dielectric constant equals for different applied pressures, and from which to higher or lower values the photonic band structure inverts its behavior, depending on the value of the applied hydrostatic pressure. We hope this work may be taken into account for the development of new perspectives in the design of new optical devices.     

基于GaAs/AlxGa1-xAs多量子阱光子晶体的窄带滤波器

讨论了利用GaAs/AlxGa1-xAs多量子阱构成的一维光子晶体实现窄带滤波的原理.研究了外加电场下GaAs/AlxGa1-xAs多量子阱的激子吸收所导致的反常色散行为.研究发现,在反常色散材料的共振频率附近,存在一个较强色散且吸收很小的区域,该区域内的色散可以在PCs的带隙中产生一个窄的通频带,其对应的最大透过率约为0.73,全固态滤光器的带宽约为4.9 nm,并可利用外加电场进行调谐,这将为设计一种全新的固态滤波器提供指导.     

大带隙二维三角格子光子晶体结构参数的优化设计

光子晶体结构设计优化是理论研究的一个重要内容.运用平面波展开法对圆柱、方柱及正六边柱构造的二维三角格子光子晶体的禁带进行仿真计算,讨论了介质材料分别为GaAs、Si和Ge情况下,柱子形状、旋转角度、填充比的变化对完全光子禁带的影响.发现:对于二维三角格子光子晶体,相对于介质柱,空气柱更易获得完全光子禁带;而相对于圆柱及...     

The two-dimensional square and triangular photonic lattice under the effects of magnetic field, hydrostatic pressure, and temperature

A standard plane-wave expansion method is used to investigate the photonic band structure of two-dimensional square and triangular lattices composed by cylindricalshell rods (GaAs rods surrounded by air shells) embedded in a semiconducting GaAs background. An analysis of the influence of geometry of the lattice basis is performed by changing inner and outer radii. The effect of dispersive dielectric responses as well as the influence of temperature and applied hydrostatic pressure to obtain efficient tunable bandgaps has also been considered. The presence of applied magnetic field is discussed as an efficient tool for tuning of the photonic band gaps in this kind of systems. The results suggest that a combination of a doped semiconductor constituent with an anisotropic geometry provides an efficient realization of photonic systems with tunable bandgaps.     

Optimum small-scale management of random beam perturbations in a femtosecond laser pulse

The geometric phase of a three-level atom interacting with single-mode in the presence of the one-dimensional photonic band gap material is studied. We consider dipole emitters situated in the thin slab region between two semi-infinite one-dimensionally periodic photonic crystals, a situation reminiscent of planar cavity laser structures. It shows that the Pancharatnam phase depends crucially on the presence of the photonic band gap. This feature is attributed to the fact that in the photonic band gap region electromagnetic modes are not allowed to propagate into the dielectric slab and hence no interaction can take place in this region. The outcomes are illustrated with numerical simulations applied to GaAs. PACS 03.67.-a; 32.80.Pj; 42.50.Ct; 42.65.Yj; 03.75.-b     

Fabrication of two-dimensional photonic lattices in GaAs: the regular graphite structures

Two-dimensional photonic lattices have been fabricated in GaAs by using standard electron beam lithography and reactive ion etching techniques. In order to obtain absolute photonic band gaps at near-infrared frequencies, graphite structures which consist of parallel cylindrical rods of GaAs at the vertices of regular hexagons have been studied. Typically, for quarter micron diameter rods and half micron nearest spacing, an etching depth of more than one micron was obtained. Preliminary results from optical characterization are also presented.     

Temperature dependence of the photonic bandgap and the orientational order parameter for a cholesteric photonic crystal

The reflection spectra of a cholesteric photonic crystal have been measured. The experimental spectra are described by a theoretical expression that follows from the analytical solution of the Maxwell equations. The photonic bandgap width Δν has been determined. The photonic bandgap width changes abruptly as the position of the diffraction band changes. The temperature dependence of the relative bandgap width Δν/ν₀ and the order parameter for a photonic crystal are described by Landau’s theory of phase transitions.     

Obtaining the band structure of a complicated photonic crystal by linear operations

Absolute band gaps can be created by lifting the degeneracy in the bands of a photonic crystal.To calculate the band structure of a complicated photoinc crystal generated by e.g.symmetry breaking ,general forms of all possible linear operations are presented in terms of matrices and procedure to combine these operations in given.Other forms of linear operations (Such as the addition,subtraction,and translation transforms)are also presented to obtain an explicit expression for the Fourier coefficient of the dielectric function in the plane-wave expansion method.With the present method,band structures for various complicated photoinc crystals(related through these linear operations)can be obtained easily and quickly.As a numerical example,a large absolute and gap for a complicated photonic crystal structure of GaAs is found in the high reglon of normalized frequency.     

基于六角结构二维光子晶体绝对带隙的优化设计研究

根据平面波展开法对二维光子晶体的能带结构进行计算，采用栅格结构连接电介质圆柱体对六角结构的二维光子晶体进行了优化. 通过计算栅格宽度和圆柱体半径对绝对带隙的影响，找到了一组可以获得大带隙二维光子晶体结构的最佳参数.优化后的光子晶体的大带隙对光子晶体制造工艺中介质圆柱体半径的偏离具有很好的稳定性，因此该结构的二维光子晶体具有很高的实用性. 关键词： 光子晶体 绝对带隙 六角结构     

Photoluminescence studies of confined states in AlGaAs/GaAs asymmetric quantum well

In the recombination spectra of AlGaAs/GaAs heterostructures, a peculiar and asymmetric photoluminescence (PL) band F has previously been reported [Aloulou et al., Mater. Sci. Eng. B 96 (2002) 14] to be due to recombinations of confined electrons from the two-dimensional electron gas (2DEG) formed at AlGaAs/GaAs interface in asymmetric quantum well (AQW). Detailed experiments are reported here on GaAs/Al_0.31Ga_0.69As/GaAs:δSi/Al_0.31Ga_0.69As/GaAs samples with different spacer layer thicknesses. We show that the band F is the superposition of two PL bands F′ and F″ associated, respectively, to AQW and a symmetric quantum well (SQW). In the low excitation regime, the F′ band present a blue shift (4.4 meV) followed by important red shift (16.5 meV) when increasing optical excitation intensity. The blue shift in energy is interpreted in terms of optical control of the 2DEG density in the AQW while the red shift is due to the narrowing of the band gaps caused by the local heating of the sample and band bending modification for relatively high-optical excitation intensity. Calculation performed using self-consistent resolution of the coupled Schrödinger–Poisson equations are included to support the interpretation of the experimental data.     

Ta2O5/MgF2异质结构三维光子晶体的偏振性

为了在可见及近红外波段得到具有良好带隙结构的三维光子晶体,利用传输矩阵法分析了MgF₂、Ta₂O₅ 以及Ta₂O₅/MgF₂异质结构三维光子晶体的带隙性质.结果表明：Ta₂O₅/MgF₂异质结构三维光子晶体在820~1 020 nm的近红外波段TM模式下具有不受入射光方向影响的全方位光子带隙.该结构有望用于制作近红外光波段的偏振器件.     

Photonic band structure in a two-dimensional hexagonal lattice of equilateral triangles

In this paper, the plane wave expansion method is used to calculate the photonic band structure (PBS) for the transverse electric (TE) polarization in a two-dimensional hexagonal lattice composed air holes with cross-sections in the shape of equilateral triangles embedded in a GaAs background. We consider that the dielectric constant of GaAs is dependent on both hydrostatic pressure and temperature. Further, an increase can be observed in the width of the photonic band gap (PBG) while the lengths of the sides of the equilateral triangles are increased. When the pressure increases in the presence of a constant temperature, the dielectric constant of GaAs decreases; further, the PBS exhibits a more noticeable shift toward regions of higher frequencies than that observed while the temperature is increased at a given pressure. We also observed that the PBG obtained by rotating the triangular holes by an angle θ increases when compared against the results obtained for the lattice of holes without performing any rotation. In addition, the results obtained using the supercell technique denote that the position and width of the PBG remain unchanged while removing a triangular hole from the structure, denoting the presence of a defective band within the PBG.     

Growth of InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrate for silicon photonics

We report the growth of self-assembled InAs/GaAs quantum dots (QDs) on germanium-on-insulator-on-silicon (GeOI/Si) substrate by antimony-mediated metal organic chemical vapor deposition. The influence of various growth procedures for the GaAs buffer layer on the QD formation and optical quality was investigated. We obtained QDs with density above 10¹⁰ cm⁻², and ground state emission in the 1.3 μm band at room temperature. These results demonstrate the promising suitability of germanium-on-insulator for the monolithic integration of QD-based and other GaAs-based photonic devices on silicon.     

Investigation of various optical transitions in GaAs/Al0.3Ga0.7As double quantum ring grown by droplet epitaxy

This work examines the optical transitions of a GaAs double quantum ring (DQR) embedded in Al_0.3Ga_0.7As matrix by photoreflectance spectroscopy (PR). The GaAs DQR was grown by droplet epitaxy (DE). The optical properties of the DQR were investigated by excitation‐intensity and temperature‐dependent PR. The various optical transitions were observed in PR spectra, whereas the photoluminescence (PL) spectrum shows only the DQR and GaAs band emissions. The various optical transitions were identified for the GaAs near‐band‐edge transition, surface confined state (SCS), DQR confined state, wetting layer (WL), spin–orbital split (E_GaAs + Δ_o), and AlGaAs band transition. PR spectroscopy can identify various optical transitions that are invisible in PL. The PR results show that the GaAs/AlGaAs DQR has complex electronic structures due to the various interfaces resulting from DE.     

Design of leaky modes of two-dimensional photonic crystal slabs to enhance the luminescence from Er3N@C80 fullerenes

We develop an effective way to engineer a two-dimensional GaAs photonic crystal slab with its leaky eigenmodes at desired wavelengths by investigating its spectral dispersion, particularly in terms of transmission efficiency spectra at different launch angles of the light beam. Structural parameters for the photonic crystal slab with leaky eigenmode wavelengths at both 1492 nm and 1519 nm are obtained. This may lead to the enhanced luminescence from erbium-doped trinitride-template fullerenes (Er₃N@C₈₀) on the surface of the photonic crystal slabs.     

Absolute photonic band gaps in a two-dimensional photonic crystal with hollow anisotropic rods

The plane-wave expansion method is used to calculate photonic band gaps for two structures with hollow anisotropic tellurium (Te) rods. Both structures are found to have absolute band gaps at the low- and high-frequency regions. Compared with the photonic crystal with solid Te rods, the photonic crystal with hollow Te rods has a large absolute band gap at the high-frequency region: for the triangular lattice of oval hollow Te rods, there is an absolute band gap of 0.058w_e (w_e=2πc/a), and for the square lattice of square hollow Te rods, there is an absolute band gap of 0.056w_e.