Ab initio calculations of Born charges in ferroelectrics with a perovskite structure

A method has been proposed for calculating Born effective charges in compounds with a cubic perovskite structure. The method is based on the first-principles calculation of individual contributions from the short-range interaction and the intercell dipole-dipole interaction to the Born tensor Z _ii (s) for crystalline dielectrics. It has been shown that the contribution from the short-range interaction Z _ii ^sr (s) to the Born tensor components can be derived from ab initio calculations performed for polyatomic clusters. The results of the calculations of the short-range interactions Z _ii ^sr (s) for the cubic phases of the BaTiO₃, SrTiO₃, CaTiO₃, PbTiO₃, BaZrO₃, PbZrO₃, KNbO₃, and KTaO₃ compounds with the use of the electronic structure calculations within the Hartree-Fock approximation and the density functional theory are presented. For the BaTiO₃, SrTiO₃, CaTiO₃, PbTiO₃, KNbO₃, and KTaO₃ compounds, the components of the complete Born tensor have been also calculated. The obtained values of Z _ii (s) are in good agreement with the results of the calculations in terms of the linear response theory and the Berry phase approach.     

Point defects in ferroelectrics with perovskite structure

First-principle calculations of the geometry and electronic structure of lattice defects (substituents, vacancies, and binary complexes) in perovskites are considered. A supercell method and modifications of a cluster method for simulating point lattice defects in insulators are discussed. Experimental data on dielectric relaxation in magnesium- and manganese-doped strontium titanate and possible mechanisms of the formation of reorientable polar defects are considered.     

Dielectric properties of perovskite ferroelectrics at the nonequilibrium concentrations of point defects

Dielectric properties of ceramic barium titanate modified by the addition of aluminum oxide are studied via impedance spectroscopy in weak electric fields in frequency range of 0.3–10³ kHz. For better separation of the properties of the inner regions of crystallites and the boundary regions by quenching, an excess concentration of point defects is created, leading to the formation of bulk charge. The experimental results are performed using the Maxwell-Wagner capacitor model and the Schottky barrier model.     

Ab initio calculations of yttrium nitride: structural and electronic properties

Using first principles total energy calculations within the full-potential linearized augmented plane wave method, we have studied the structural and electronic properties of yttrium nitride (YN) in the three phases, namely wurtzite, caesium chloride and rocksalt structures. The calculations are performed at zero and under hydrostatic pressure. In agreement with previous findings, it is found that the favored phase for YN is the rocksalt-like structure. We predict that at zero pressure YN in the rocksalt structure is a semiconductor with an indirect bandgap of 0.8 eV. A phase transition from a rocksalt to a caesium chloride structure is found to occur at ∼134 GPa. Besides, a transition from an indirect (Γ−X) bandgap semiconductor to a direct (X−X) one is predicted at pressure of ∼84 GPa. For the electron effective mass of rocksalt YN, these are the first results, to our knowledge. The information derived from the present study may be useful for the use of YN as an active layer in electronic devices such as diodes and transistors.     

Ab initio study of electronic structure of strained

Micro-hardness and scratch adhesion testing are the most commonly used techniques for assessing the mechanical properties of thin films. Both of these testing methods utilize single-point contact and induce plastic deformation in the substrate and film. However, the influence of adhesion on the measured hardness has been seldom reported so far. In our experiments, diamond-like carbon (DLC) and silicon carbide (SiC) films deposited on silicon and nickel-based alloy substrates by pulsed laser ablation were indented and scratched by a Vickers micro-hardness tester and a diamond-cutter, respectively. It was found that the composite hardness decreased more rapidly for poor adhesion when increasing the indentation load. The result was explained by the elastic-plastic deformation mode of indentation and helped us to understand the physical meaning of one parameter commonly introduced in the models used to separate film hardness from the composite hardness. Received 30 June 1998     

Ab initio calculations of electronic and optical properties in O-doped LiF crystal

We present a first-principle study of electronic and optical properties in pure LiF and O-doped LiF crystals. The pure LiF crystal exhibits a wide band gap while the O-doped LiF crystal shows the less band gap due to the contribution of O 2p. Some optical constants, such as dielectric functions, reflectivity and the refractive index, have been performed. The calculated reflectivity and refractive index from the pure LiF crystal agree with the experimental and recently calculated results in the low-energy range. Meanwhile, the optical properties have also been predicted from the O-doped LiF crystal. The absorption band in 200 nm has been observed, which is relatively close to the experimental result.      

Effect of pressure on the atomic and electronic structure of enstatite MgSiO3: Ab initio calculations

Simulation results for the effect of pressure on the atomic and electronic structure of MgSiO₃ are presented. They are in good agreement with experimental data. It is shown that, when the pressure rises from 0 to 2 GPa, the bandgap increases from 4.67 to 4.74 eV because of the electron charge redistribution between atoms in the enstatite structure.     

Ab initio calculations on oxygen vacancy defects in strained amorphous silica

The effects of uniaxial tensile strain on the structural and electronic properties of positively charged oxygen vacancy defects in amorphous silica(a-SiO2)are systematically investigated using ab-initio calculation based on density functional theory.Four types of positively charged oxygen vacancy defects,namely the dimer,unpuckered,and puckered four-fold(4×),and puckered five-fold(5×)configurations have been investigated.It is shown by the calculations that applying uniaxial tensile strain can lead to irreversible transitions of defect structures,which can be identified from the fluctuations of the curves of relative total energy versus strain.Driven by strain,a positively charged dimer configuration may relax into a puckered 5×configuration,and an unpuckered configuration may relax into either a puckered 4×configuration or a forward-oriented configuration.Accordingly,the Fermi contacts of the defects remarkably increase and the defect levels shift under strain.The Fermi contacts of the puckered configurations also increase under strain to the values close to that of Eα′center in a-SiO2.In addition,it is shown by the calculations that the relaxation channels of the puckered configurations after electron recombination are sensitive to strain,that is,those configurations are more likely to relax into a two-fold coordinated Si structure or to hold a puckered structure under strain,both of which may raise up the thermodynamic charge-state transition levels of the defects into Si band gap.As strain induces more puckered configurations with the transition levels in Si band gap,it may facilitate directly the development of oxide charge accumulation and indirectly that of interface charge accumulation by promoting proton generation under ionization radiation.This work sheds a light on understanding the strain effect on ionization damage at an atomic scale.     

B80 fullerene: an Ab initio prediction of geometry, stability, and electronic structure

The geometry, electronic, and structural properties of an unusually stable boron cage made of 80 boron atoms are studied, using ab initio calculations. The shape of this cluster is very similar to that of the well-known C60 fullerene, but in the B80 case, there is an additional atom in the center of each hexagon. The resulting cage preserves the Ih symmetry, has a relatively large highest occupied and lowest unoccupied energy gap ( approximately 1 eV) and, most importantly, is energetically more stable than boron double rings, which were detected in experiments and considered as building blocks of boron nanotubes. To our knowledge, this is the most stable boron cage studied so far.     

Ab initio many-body treatment of the electronic structure of metals

We propose and apply a combination of an ab initio (band-structure) calculation with a many-body treatment including screening effects. We start from a linearized muffin-tin orbital (LMTO) calculation to determine the Bloch functions for the Hartree one-particle Hamiltonian, from which we calculate the static susceptibility and dielectric function within the standard random phase approximation (RPA). From the Bloch functions we obtain maximally localized Wannier functions, using a method proposed by Marzari and Vanderbilt. Within this Wannier basis all relevant one-particle and unscreened and screened Coulomb matrix elements are calculated. This yields a multi-band Hamiltonian in second quantization with ab initio parameters, for which screening has been taken into account within the simplest standard approximation. Then, established methods of many-body theory are used. We apply this concept to a simple metal, namely lithium (Li). Here the maximally localized Wannier functions turn out to be of the sp³-orbital kind. Furthermore, only the on-site contributions of the screened Coulomb matrix elements are relevant, and a generalized, four-band Hubbard model is justified. The screened on-site Coulomb matrix elements are considerably smaller than the band width because of which it is sufficient to calculate the selfenergy in weak-coupling approximation. We compare results obtained within the screened Hartree-Fock approximation (HFA) and within the second-order perturbation theory (SOPT) in the Coulomb matrix elements for Li and find that many-body effects are small but not negligible even for this simple metal.     

Ab initio study of oxygen point defects on tungsten trioxide surface

The gas response of tungsten trioxide (WO3) based sensors strongly depends on the surface properties. Reconstructed surfaces and oxygen point defects at the surface of the monoclinic WO3 are studied using a self-consistent scheme based on first-principle. The oxygen vacancy is found to be the predominant defect independently of the oxygen partial pressure. Indeed, under rich oxygen atmosphere the formation enthalpies are found to be 1.45 eV in LDA (1.28 eV in GGA) for the oxygen vacancy instead of 2.70 eV (2.42 eV) for the oxygen adatom. When the oxygen partial pressure is lowered, the oxygen vacancy formation enthalpy decreases and becomes exothermic under very O-poor condition (? 1.65 eV in LDA and ? 1.36 eV in GGA). On the other hand, the formation enthalpy of an oxygen adatom rises. Finally, the oxygen vacancy formation acts as a n-doping by introducing negative charge carriers at the bottom of the conduction band. All these results can be very helpful in order to explain the electrical resistivity measurements.     

Ab initio study of the distribution of point defects at grain boundaries in crystalline silicon

The segregation of a vacancy and phosphorus on inclined grain boundaries in crystalline silicon has been calculated. It has been found that the distribution of defects at boundaries under study depends both on the nature of a defect and on the local structure of the boundary. The parameters characterizing the local deformation of the tetrahedral environment of an atom at the boundary have been proposed. A linear correlation has been found between the energy of the distribution and proposed parameters.     

Ab initio theory and calculations of X-ray spectra

There has been dramatic progress in recent years both in the calculation and interpretation of various x-ray spectroscopies. However, current theoretical calculations often use a number of simplified models to account for many-body effects, in lieu of first principles calculations. In an effort to overcome these limitations we describe in this article a number of recent advances in theory and in theoretical codes which offer the prospect of parameter free calculations that include the dominant many-body effects. These advances are based on ab initio calculations of the dielectric and vibrational response of a system. Calculations of the dielectric function over a broad spectrum yield system dependent self-energies and mean-free paths, as well as intrinsic losses due to multi-electron excitations. Calculations of the dynamical matrix yield vibrational damping in terms of multiple-scattering Debye–Waller factors. Our ab initio methods for determining these many-body effects have led to new, improved, and broadly applicable x-ray and electron spectroscopy codes. To cite this article: J.J. Rehr et al., C. R. Physique 10 (2009).     

Ab initio study of the electronic and atomic structure of the wolframite-type ZnWO4

Ab initio quantum chemistry calculations of the structural and electronic properties of monoclinic wolframite-type ZnWO₄ crystal have been performed within the periodic linear combination of atomic orbitals (LCAO) method using six different Hamiltonians, based on density functional theory (DFT) and hybrid Hartree-Fock-DFT theory. The obtained results for optimized structural parameters, band gap and partial density of states are compared with available experimental data, and the best agreement is observed for hybrid Hamiltonians. The calculations show that zinc tungstate is a wide band gap material, with the direct gap about 4.6 eV, whose valence band has largely O 2p character, whereas the bottom of conduction band is dominated by W 5d states.     

Ab initio studies of the atomic and electronic structure of pure and hydrogenated a-Si

We propose a method to simulate a-Si and a-Si:H using an ab initio approach based on the Harris functional and thermally-amorphisized periodically-continued cells with at least 64 atoms. Hydrogen incorporation was achieved via diffusive addition. In preparing samples that may simulate the distributions of atoms in the amorphous materials, simulated annealing calculations were carried out from given starting conditions using short and long time steps. The different time-steps led to samples having distinctly different topological disorder. The radial distribution functions (partial and total) of the resulting samples were calculated and compared with measured distributions; the agreement is very good. These comparisons allowed some tentative conclusions to be made as regards the kind of disorder prevailing in the real samples. In addition, we studied the effect of the topological disorder on the electronic densities of states of the samples; the passivating effect of hydrogen can be observed. Received 17 May 2001