掺碲硒化镓晶体的光学性能(英文)

采用水平区熔法生长了碲(Te)掺杂浓度(质量百分比)分别为0.05%,0.1%,0.5%,1%,2%的硒化镓(GaSe)晶体,并分别对掺杂浓度为0.01%,0.07%,0.38%,0.67%,2.07%的GaSe∶Te晶体的光学性能进行了表征。首次研究了GaSe∶Te晶体中刚性层声子模式的转换。吸收光谱测试结果表明:当Te掺杂浓度小于0.38%时,振动中心位于0.59 THz附近的E'(2)刚性模式吸收峰强度可达最大值,这一过程与GaSe∶Te晶体光学性能的提高密切相关。但Te掺杂浓度的进一步提高会导致E'(2)刚性模式吸收峰强度逐渐减弱,当Te掺杂浓度为1%时,E'(2)刚性模式吸收峰基本消失。这两个过程与GaSe∶Te晶体光学质量的下降密切相关。因此,E'(2)刚性模式吸收强度达到最高时对应的掺杂浓度即是GaSe∶Te晶体中Te的最佳掺杂浓度,光整流产生太赫兹过程证实了此结论的正确性。     

整形超短激光脉冲与硒化镓晶体光整流效应的可调谐宽带太赫兹波产生

从非线性光学基本原理出发研究了整形超短激光脉冲与硒化镓晶体光整流效应产生的可调谐宽带太赫兹辐射,并采用数值计算对上述过程进行了仿真研究,探索了整形激光脉冲参数对太赫兹辐射的影响。研究发现,利用4F整形系统调节激光频谱分量获得的整形超短激光脉冲与硒化镓晶体的光整流效应可以产生频谱可调的宽带太赫兹辐射,并且可以使太赫兹脉冲的中心频率由高频部分向低频部分调制,同时带宽也会发生一定的变化。     

激光二极管抽运下铥/镱共掺碲镓酸盐玻璃光谱特性研究

研究了808 nm和977 nm激光二极管抽运下铥/镱共掺TeO₂-Ga₂O₃-R₂O(R=Li，Na，K)玻璃光谱特性.利用Judd-Ofelt 理论计算了Tm³⁺离子在碲镓酸盐玻璃中自发辐射跃迁概率、荧光分支比和辐射寿命等光谱参数.在977 nm激光二极管抽运下，观测到Tm³⁺/Yb³⁺共掺碲镓酸盐玻璃很强的476 nm上转换蓝光(¹G₄→³H₆)和较弱的650 nm上转换红光(¹G₄→³H₄和³F_2，3→³H₆).分析表明476 nm蓝光发射为三光子吸收过程，650 nm红光发射为双光子和三光子混合吸收过程；而在808 nm激光二极管抽运下，玻璃上转换蓝色荧光为双光子吸收过程.实验发现，随着碱金属离子半径的增大，977 nm激光二极管抽运下蓝光上转换发光强度增强，而用808 nm激光二极管抽运蓝光上转换发光无明显的变化. 关键词： 碲镓酸盐玻璃 铥镱共掺 Judd-Ofelt 理论 上转换     

镨掺杂碲铌铅玻璃的光学性能

研究了掺稀土离子Pr^3 的碲铌铅玻璃的吸收光谱,色度色散和非线性光学性能。结果表明：高浓度的Pr^3 引入到碲铌铅玻璃系统后,仍能够形成均匀透明的玻璃,该玻璃具有高的折射率和非线性折射率。     

太赫兹时域光谱技术研究S掺杂GaSe晶体的电导率特性

本文采用透射式太赫兹时域光谱技术研究0.3—2.5 THz范围内本征GaSe,S掺杂质量分数为2.5%GaSe(GaSe:S(2.5%))和S掺杂质量分数为7%GaSe(GaSe:S(7%))晶体的电导率特性,并利用Drude-SmithLorentz模型对复电导率进行拟合.研究发现GaSe晶体的电导率实部随S掺杂浓度的增大而减小,主要是由于S掺杂使GaSe晶体的费米能级逐渐向电荷中性能级转移,载流子浓度下降引起的.本征GaSe和GaSe:S(2.5%)在约0.56 THz处有明显的晶格振动峰,而GaSe:S(7%)在0.56 THz附近无晶格振动峰,这主要是由于S掺杂提高了晶体的结构硬度,减弱了晶体的层间刚性振动.且3个样品均在约1.81 THz处存在明显的窄晶格振动峰,强度随S掺杂浓度的增大先减小再增大,主要是由于S掺杂降低了GaSe的局部结构缺陷,减弱了窄晶格振动峰强度,而过量的S掺杂生成β型GaS晶体,进而增加晶体的局部结构缺陷,窄晶格振动峰强度随之增强.GaSe晶体约在1.07 THz和2.28 THz处的宽晶格振动峰强度随S掺杂浓度的增大而减弱甚至消失,主要是由于S掺杂产生...     

碲、硒碲合金纳米线的可控合成

"采用一种新的化学溶液法合成了具有不同形貌的碲、硒碲合金纳米线．用十二烷基苯磺酸钠作为表面活性剂实现了对纳米线的可控合成,通过控制反应过程可以弯曲状、"V"字型的硒碲纳米线,利用XRD、TEM以及HRTEM对纳米线的形貌结构特征进行表征;以实验结果为依据讨论了纳米线的生长机理．"     

利用透射光谱反演硒化锌的光学常数

建立了单块样品和两块叠加样品的透射比计算模型,并提出了一种基于两块相同厚度样品叠加后的透射光谱反演其光学常数的新方法。通过Bruke V70傅里叶光谱仪测试了不同厚度单块硒化锌样品以及两块硒化锌样品叠加的1.33～21 μm范围的透射光谱,结合实验透射光谱利用光学常数反演方法,计算得到了硒化锌样品的光学常数。部分反演结果与文献中数据进行比较,验证了反演方法的可靠性。     

Ta2O5对碲铋酸盐玻璃光学性能的影响

通过高温熔融法制备了一系列(90-x)TeO2-10Bi2 O3-xTa2 O5(x=0％,2％,4％,6％,8％)TBT玻璃样品.拉曼光谱和X射线光电子能谱测试结果显示,随着Ta2 O5的加入,玻璃网络中的[TeO3]与[TeO3+1]向[TeO4]转变,玻璃网络结构更加致密.这解释了差示扫描量热法测试中TBT玻璃的...     

超薄金属膜在太赫兹波段的光学特性研究

超薄金属膜在太赫兹波段的探测器、反射镜、波导器件以及太赫兹量子级联激光器中得到了广泛应用。超薄金属膜的光学常数不仅是这些器件设计中不可缺少的参数,而且是开发新型光电材料的一个重要依据。文章运用太赫兹差分时域光谱技术对超薄金属铬、镍和钛膜的光学特性研究,获得其在太赫兹波段的折射率和消光系数,并根据菲涅尔公式计算入射介质为高阻GaAs时,GaAs/Metal界面的反射谱,三种金属在0.3～1.5THz的波段范围内的平均反射率均超过80%。研究超薄金属膜在太赫兹波段的反射特性,为设计性能优良的太赫兹辐射源、探测器及太赫兹光学元件奠定基础。     

掺Yb钒酸盐晶体激光振荡中的光学双稳态现象研究

研究了三种掺Yb钒酸盐晶体Yb:LuVO4,Yb:YVO4和Yb:GdVO4的激光振荡中所呈现的光学双稳态效应.以晶体所吸收的抽运功率表征的双稳区宽度ΔPabs可超过1W,在双稳区高功率一侧的边界,即激光振荡的上阈值点,出现激光输出功率的不连续变化或跃变,同时发生亚毫秒时间尺度上的大幅度强度涨落.谐振腔的输出耦合透过率、晶体长度、晶体中的热效应等对双稳态效应均具有重要影响.     

Optical and defect properties of S-doped and Al-doped GaSe crystals

S-doped and Al-doped GaSe crystals are promising materials for their applications in nonlinear frequency conversion devices. The optical and defect properties of pure, S-doped, and Al-doped GaSe crystals were studied by using photoluminescence(PL) and Fourier transform infrared spectroscopy(FT-IR). The micro-topography of(0001) face of these samples was observed by using scanning electron microscope(SEM) to investigate the influence of the doped defects on the intralayer and interlayer chemical bondings. The doped S or Al atoms form the S_(Se)~0 or Al_(Ga)~(+1) substitutional defects in the layer GaSe structure, and the positive center of Al_(Ga)~(+1) could induce defect complexes. The incorporations of S and Al atoms can change the optical and mechanical properties of the GaSe crystal by influencing the chemical bonding of the layer structure. The study results may provide guidance for the crystal growth and further applications of S-doped and Al-doped GaSe crystals.     

GaSe晶体的双光子吸收对太赫兹输出的影响

根据光整流效应,利用超快激光脉冲泵浦GaSe晶体实现了0.2~2.5 THz的宽带太赫兹辐射输出。禁带中的电子在两个800 nm光子的作用下激发到导带中形成自由载流子,进而吸收所产生的太赫兹辐射,最终导致太赫兹的输出随泵浦功率的增加而趋于饱和。为了研究双光子吸收对太赫兹输出的影响,测量了800 nm处的GaSe晶体的双光子吸收系数,结果为 0.165 cm/GW。通过对太赫兹输出实验数据的拟合,得到GaSe晶体中自由载流子对太赫兹输出的吸收截面为1×10^-15 cm²。本文的研究结果可用于优化GaSe晶体在强激光泵浦下的太赫兹转换效率。     

相变记录介质GeSb2Te4薄膜的光学性质,晶体结构和晶化特性

采用高频磁控溅射制备了GeSb_2Te_4薄膜.系统地研究了真空热退火对GeSb_2Te_4薄膜光学性质和晶体结构的影响.对非晶态GeSb_2Te_4薄膜进行了热分析,给出了其结晶过程的动力学参数.     

Effective nonlinear GaSe crystal. Optical properties and applications

We present an overview of the current state of the literature and research performed by the authors of the present paper on the experimental and theoretical results on the structural-, optical-, nonlinear optical (NLO)-properties (including two-photon absorption (TPA) and the terahertz (THz) range of spectra) and practical applications of a highly anisotropic Gallium Selenide (GaSe) semiconductor with emphasis on the ?-GaSe. Physical properties of ?-GaSe are important to researchers and designers developing different devices by using this material. This crystal possesses an outstanding NLO properties: high optical birefringence Δn ～ 0.3 at 700 nm; high transparency range (0.7?18.0 μm) with low absorption coefficient (α ≤ 0.3 cm^?1); very high nonlinear susceptibility χ⁽²⁾ (d ₂₂ ≈ 86 ± 17 pm/V, corresponding to (2.0 ± 0.4) × 10^?7 esu) that is used for phase matched second harmonic generation (SHG) in a wide transparency range; high power threshold for optical damage; possibility to perform optical frequency conversion under phase-matching conditions in the near- to mid-IR and THz range of spectra, etc. The domain structure of crystal in connection with the NLO properties is discussed as studied by confocal Raman microscopy experiments. Perspectives for future research of GaSe are considered in the present article, which does not pretend to be one reflecting all existing papers on GaSe crystal and discussed subjects.     

Tunable electronic and optical properties of GaS/GaSe van der Waals heterostructure

We have used first-principles calculations to investigate the electronic and optical properties of GaS/GaSe van der Waals heterostructures formed by stacking two-dimensional GaSe and GaSe monolayers. Our findings confirm that the GaS/GaSe heterostructures transform from an indirect to a direct band gap material for the two stackings considered in this study. In addition, we found that the direct band gaps are 1.780 eV and 1.736 eV for AA and AB stacking, respectively. It is observed that the behavior of the optical properties of AA stacking is similar to AB stacking with some differences in details and both heterostructures located in UV range. The refractive index values are 2.21 (AA pattern) and 2.18 (AB pattern) at zero photon energy limit and increase to 2.937 for AA and 2.18 AB patterns and both located in the visible region. More importantly, the GaS/GaSe heterostructures have a variety of extraordinary electronic and optical properties. Accordingly, these heterostructures can be useful for the solar cell, nanoelectronics, and optoelectronic applications.     

Tunable terahertz generation from one CO2 laser in a GaSe crystal

Coherent terahertz pulses have been generated at a range of 236.3-1104.5 μm (0.27-1.3 THz) by one CO₂ laser with dual-wavelength output based on collinearly phase-matched different frequency generation (DFG) in a GaSe crystal. This source has the advantages of compact and simplicity for tuning. The output power of the THz pulse and phase-matching conditions were investigated. The maximum single pulse energy of 11 nJ was generated at a frequency of 1.23 THz (243.6 μm), corresponding to a peak output power 182 mW.     

Investigation of symmetries of second-order nonlinear susceptibility tensor of GaSe crystals in THz domain

Following our measurements and analysis made on several GaSe crystals, we demonstrated that terahertz (THz) generation from ultrafast laser pulses can be developed into a sensitive technique for investigating symmetries of second-order nonlinear susceptibility tensor of a nonlinear crystal. Indeed, for GaSe crystals, both Kleinman's symmetry condition and spatial symmetry were violated due to the contribution of ionic displacement to nonlinear polarization and deviation of GaSe lattice from hexagonal symmetry. When the pump photon energy was increased from that below the bandgap of GaSe to that above it, the mechanism for the THz generation was switched from optical rectification to photocurrent surge.     

相位失配与材料吸收对利用GaSe差频产生太赫兹波功率影响的研究

从理论上分析了相位失配与材料吸收在利用GaSe非线性差频产生太赫兹(THz)波中的影响,计算得到了4种不同情况下的晶体最佳长度值和相应THz最大功率,计算了角度失配对于相位失配的影响,计算结果为非线性光学差频实验提供了重要参考依据和理论设计基础. 关键词： 太赫兹波 GaSe晶体 相位失配 材料吸收     

硫酸盐对KDP晶体质量的影响

利用“点籽晶”快速生长技术生长了掺杂硫酸钾（K2SO4）的磷酸二氢钾（KDP）晶体,并对硫酸根类杂质离子对晶体的结构及光学质量的影响进行了研究。结果表明：在掺杂相对含量为50×10-6条件下,K2SO4开始对KDP晶体产生一定影响,主要表现在不同扇形区域的结构略有改变,其原因主要在于硫酸根与KDP晶体各扇形结构有关;杂质粒子对晶体透过率、单轴性没有明显影响,但是热膨胀系数增大,光损伤阈值略有降低。