Measurement of photon interaction parameters of high-performance polymers and their composites

In the present study, commercially important high-performance polymers and their composites have been investigated with respect to photon interactions as means of mass attenuation coefficient (μ/ρ), mean free path (MFP), half-value layer (HVL), effective atomic number (Z_eff), effective electron density (N_eff), and energy absorption and exposure buildup factors (EABF and EBF) at different photon energies. For this purpose, sample plates were prepared by extrusion and injection techniques using polyethersulfone, polyetherimide, acrylonitrile butadiene styrene copolymer, polyamide 66, polyphthalamide, and polypropylene copolymers as high-performance polymers and glass and carbon fibers as reinforcement. The (μ/ρ)s of the materials were measured at 81 and 356?keV photon energies to determine MFP, HVL, Z_eff, and N_eff. The theoretical values of these parameters were calculated via ZXCOM, WinXCom and Monte Carlo N-Particle simulation code (MCNP), and a good agreement was obtained between WinXCom–MCNP and MCNP–Exp. Finally, EABFs and EBFs of the samples were calculated up to around 40 MFP in the energy region 0.015–15?MeV and significant variations were observed in the continuous energy and MFP regions.     

Fabrication and characteristics of high-K HfO2 gate dielectrics on n-germanium

This paper reports that the high-K HfO2 gate dielectrics are fabricated on n-germanium substrates by sputtering Hf on Ge and following by a furnace annealing. The impacts of sputtering ambient, annealing ambient and annealing temperature on the electrical properties of high-K HfO2 gate dielectrics on germanium substrates are investigated. Experimental results indicate that high-K HfO2 gate dielectrics on germanium substrates with good electrical characteristics are obtained, the electrical properties of high-K HfO2 gate dielectrics is strongly correlated with sputtering ambient, annealing ambient and annealing temperature.     

Evaluating the influence of experimental conditions on the photon energy response of Al2O3:C optically stimulated luminescence detectors

This work presents a determination of the photon energy response of Al₂O₃:C optically stimulated luminescence (OSL) detectors (single crystals and Luxel^® detectors) to photons with mean energies from 10 keV to 1225 keV. Irradiations were performed free-in-air using standard X-ray fields (narrow-spectrum series) specified by the International Organization for Standardization. The OSL readouts were conducted under different conditions (e.g., different optical filters; continuous or pulsed stimulation) and the analyses were performed using the initial OSL intensity or total OSL area. The measured photon energy response of the OSL signal was compared to the ratio between the mass–energy absorption coefficient for Al₂O₃:C and air. The results demonstrate that the photon energy response of Al₂O₃:C is not only dependent on the energy deposited, but also on the experimental conditions. This is attributed to the effect of ionization density on the OSL properties of Al₂O₃:C, which affects the shape of the OSL curve and the relative intensity of the OSL emission bands. The results highlight the importance of maintaining similar OSL readout conditions and using similar types of detectors when determining and applying photon energy correction factors.     

A comparative study of gamma-ray interaction and absorption in some building materials using Zeff-toolkit

The gamma-ray shielding behaviour of a material can be investigated by determining its various interaction and energy-absorption parameters (such as mass attenuation coefficients, mass energy absorption coefficients, and corresponding effective atomic numbers and electron densities). Literature review indicates that the effective atomic number (Z_eff) has been used as extensive parameters for evaluating the effects and defect in the chosen materials caused by ionising radiations (X-rays and gamma-rays). A computer program (Z_eff-toolkit) has been designed for obtaining the mean value of effective atomic number calculated by three different methods. A good agreement between the results obtained with Z_eff-toolkit, Auto_Z_eff software and experimentally measured values of Z_eff has been observed. Although the Z_eff-toolkit is capable of computing effective atomic numbers for both photon interaction (Z_eff,PI) and energy absorption (Z_eff,En) using three methods in each. No similar computer program is available in the literature which simultaneously computes these parameters simultaneously. The computed parameters have been compared and correlated in the wide energy range (0.001–20?MeV) for 10 commonly used building materials. The prominent variations in these parameters with gamma-ray photon energy have been observed due to the dominance of various absorption and scattering phenomena. The mean values of two effective atomic numbers (Z_eff,PI and Z_eff,En) are equivalent at energies below 0.002?MeV and above 0.3?MeV, indicating the dominance of gamma-ray absorption (photoelectric and pair production) over scattering (Compton) at these energies. Conversely in the energy range 0.002–0.3?MeV, the Compton scattering of gamma-rays dominates the absorption. From the 10 chosen samples of building materials, 2 soils showed better shielding behaviour than did other 8 materials.     

Metal carbide-induced negative flatband voltage shift in TaCx and HfCx/HfO2 gate stacks

We systematically investigated the role of the top interface for TaC_x and HfC_x/HfO₂ gate stacks on the effective work function (Φ_m,eff) shift by inserting a SiN layer at the gate/HfO₂ top interface or HfO₂/SiO₂ bottom interface. We found that Φ_m,eff of the TaN gate electrode on HfO₂ was larger than that on SiO₂ because of the HfO₂/SiO₂-bottom-interface dipole. On the other hand, we found that Φ_m,eff values of the TaC_x and HfC_x gate electrodes on HfO₂ agree with Φ_m,eff on SiO₂. This is because the potential offset of the opposite direction with respect to the bottom interface dipole appears at the metal carbide/HfO₂ interface. It is thus concluded that the top interface in the metal carbide/HfO₂ gate stacks causes the negative Φ_m,eff shift.     

White and some colored marbles as alternative radiation shielding materials for applications

ABSTRACT

In this paper, the radiation shielding parameters such as linear attenuation coefficients (LAC, µ), mass attenuation coefficients (MAC, µ/ρ), effective atomic numbers (Z_eff), effective electron densities (N_eff), half value of layers (HVL), mean free paths (MFP) and buildup factors (exposure (EBF) and energy absorption (EABF)) were investigated for cream (M1), pink (M2), white (M3), maroon (M4) and green (M5) marbles. Attenuation coefficients were measured in the energy region 31.18–661.66 keV photon energies. The values of Z_eff and N_eff were then calculated using these coefficients with logarithmic interpolation method, and HVLs and MFPs were calculated using the values of LAC of marble samples at the same photon energies. The experimental results were compared with the theoretical values obtained from WinXCom program, and good agreements were observed between the experimental and theoretical results. HVLs and MFPs of all marble samples were compared with those of some concretes, glasses and commercial radiation shielding glasses (SCHOTT Co.). The studied marbles were better radiation shielding materials than standard shielding concretes due to lower HVL and MFP values lower than the ordinary concrete. Finally, EBFs and EABFs of the marbles were calculated in the energy region 0.015–1?MeV up to penetration depths of 40 mfps by Geometric Progression method (G-P), and the results were discussed in terms of photon energies and chemical compositions of the marbles.     

Characteristics improvement of HfO2/Ge gate stack structure by fluorine treatment of germanium surface

Chemical reactivity of fluorine molecule (F₂)-germanium (Ge) surface and dissociation of fluorine (F)-Ge bonding have been simulated by semi-empirical molecular orbital method theoretically, which shows that F on Ge surface is more stable compared to hydrogen. Ge MIS (metal insulator semiconductor) capacitor has been fabricated by using F₂-treated Ge(1 0 0) substrate and HfO₂ film deposited by photo-assisted MOCVD. Interface state density observed as a hump in the C-V curve of HfO₂/Ge gate stack and its C-V hysteresis were decreased by F₂-treatment of Ge surface. XPS (X-ray photoelectron spectroscopy) depth profiling reveals that interfacial layer between HfO₂ and Ge is sub-oxide layer (GeO_x or HfGeO_x), which is believed to be origin of interface state density.F was incorporated into interfacial layer easily by using F₂-treated Ge substrate. These results suggest that interface defect of HfO₂/Ge gate stack structure could be passivated by F effectively.     

Synthesis,characterization and radiation damage studies of high-k dielectric (HfO2) films for MOS device applications

The current trend in miniaturization of metal oxide semiconductor devices needs high-k dielectric materials as gate dielectrics. Among all the high-k dielectric materials, HfO₂ enticed the most attention, and it has already been introduced as a new gate dielectric by the semiconductor industry. High dielectric constant (HfO₂) films (10?nm) were deposited on Si substrates using the e-beam evaporation technique. These samples were characterized by various structural and electrical characterization techniques. Rutherford backscattering spectrometry, X-ray reflectivity, and energy-dispersive X-ray analysis measurements were performed to determine the thickness and stoichiometry of these films. The results obtained from various measurements are found to be consistent with each other. These samples were further characterized by I–V (leakage current) and C–V measurements after depositing suitable metal contacts. A significant decrease in the leakage current and the corresponding increase in device capacitance are observed when these samples were annealed in oxygen atmosphere. Furthermore, we have studied the influence of gamma irradiation on the electrical properties of these films as a function of the irradiation dose. The observed increase in the leakage current accompanied by changes in various other parameters, such as accumulation capacitance, inversion capacitance, flat band voltage, mid-gap voltage, etc., indicates the presence of various types of defects in irradiated samples.     

Investigation of radiological properties of some shielding materials on charged and uncharged radiation interaction for neutron generator

Radiation interaction parameters such as total stopping power, projected range (longitudinal and lateral) straggling, mass attenuation coefficient, effective atomic number (Z_eff) and electron density (N_eff) of some shielding materials were investigated for photon and heavy charged particle interactions. The ranges, stragglings and mass attenuation coefficients were calculated for the high-density polyethylene(HDPE), borated polyethylene (BPE), brick (common silica), concrete (regular), wood, water, stainless steel (304), aluminum (alloy 6061-O), lead and bismuth using SRIM Monte Carlo software and WinXCom program. In addition, effective atomic numbers (Z_eff) and electron densities (N_eff) of HDPE, BPE, brick (common silica), concrete (regular), wood, water, stainless steel (304) and aluminum (alloy 6061-O) were calculated in the energy region 10?keV–100?MeV using mass stopping powers and mass attenuation coefficients. Two different methods namely direct and interpolation procedures were used to calculate Z_eff for comparison and significant differences were determined between the methods. Variations of the ranges, longitudinal and lateral stragglings of water, concrete and stainless steel (304) were compared with each other in the continuous kinetic energy region and discussed with respect to their Z_effs. Moreover, energy absorption buildup factors (EABF) and exposure buildup factors (EBF) of the materials were determined for gamma rays as well and were compared with each other for different photon energies and different mfps in the photon energy region 0.015–15?MeV.     

Low-temperature deposition of stoichiometric HfO2 on silicon: Analysis and quantification of the HfO2/Si interface from electrical and XPS measurements

An understanding of the exact structural makeup of dielectric interface is crucial for development of novel gate materials. In this paper a study of the HfO₂/Si interface created by the low-temperature deposition ultrathin stoichiometric HfO₂ on Si substrates by reactive sputtering is presented. Analysis, quantification and calculation of layer thickness of an HfO₂/Hf-Si-O_x/SiO₂ gate stack dielectrics have been performed, using X-ray photoelectron spectroscopy (XPS) depth profile method, angle resolved XPS and interface modeling by XPS data processing software. The results obtained were found to be in good agreement with the high frequency capacitance-voltage (C-V) measurements. The results suggest a development of a complex three layer dielectric stack, including hafnium dioxide layer, a narrow interface of hafnium silicate and broad region of oxygen diffusion into silicon wafer. The diffusion of oxygen was found particularly detrimental to the electrical properties of the stack, as this oxygen concentration gradient leads to the formation of suboxides of silicon with a lower permittivity, κ.     

Effects of heavy-ion irradiation on the electrical properties of rf-sputtered HfO2 thin films for advanced CMOS devices

HfO₂-based metal-oxide semiconductor (MOS) capacitors were irradiated with high-energy ion beam to study the irradiation effects in these films. HfO₂ thin films deposited by radio frequency (rf)-sputtering were irradiated with 80 MeV O⁶⁺ ions. The samples were irradiated and characterized at room temperature. Devices were characterized via 1 MHz capacitance–voltage (C?V) measurements using the midgap method. The irradiation induced dispersion in accumulation and depletion regions with increasing fluence is observed. After irradiation, the midgap voltage shift (Δ V _mg) of?0.61 to?1.92 V, flat band voltage shift (Δ V _fb) of?0.48 to?2.88 V and threshold voltage shift (Δ V _th) of?0.966 to?1.96 V were observed. The change in interface trap charge and oxide trap charge densities after 80 MeV O⁶⁺ ions irradiation with fluences were determined from the midgap to flat band stretch out of C?V curves. The results are reported and explained in terms of changes in microstructure and dielectric properties of the HfO₂ thin films after irradiation.     

Fabrication and characterization of La-doped HfO2 gate dielectrics by metal-organic chemical vapor deposition

La-doped HfO₂ gate dielectric thin films have been deposited on Si substrates using La(acac)₃ and Hf(acac)₄ (acac = 2,4-pentanedionate) mixing sources by low-pressure metal-organic chemical vapor deposition (MOCVD). The structure, thermal stability, and electrical properties of La-doped HfO₂ films have been investigated. Inductive coupled plasma analyses confirm that the La content ranging from 1 to 5 mol% is involved in the films. The films show smaller roughness of ∼0.5 nm and improved thermal stability up to 750 °C. The La-doped HfO₂ films on Pt-coated Si and fused quartz substrates have an intrinsic dielectric constant of ∼28 at 1 MHz and a band gap of 5.6 eV, respectively. X-ray photoelectron spectroscopy analyses reveal that the interfacial layer is Hf-based silicate. The reliable value of equivalent oxide thickness (EOT) around 1.2 nm has been obtained, but with a large leakage current density of 3 A/cm² at V_g = 1V + V_fb. MOCVD-derived La-doped HfO₂ is demonstrated to be a potential high-k gate dielectric film for next generation metal oxide semiconductor field effect transistor applications.     

Electrical properties and reliability of HfO2 gate-dielectric MOS capacitors with trichloroethylene surface pretreatment

Trichloroethylene （TCE） pretreatment of Si surface prior to HfO2 deposition is employed to fabricate HfO2 gatedielectric MOS capacitors. Influence of this processing procedure on interlayer growth, HfO2/Si interface properties, gate-oxide leakage and device reliability is investigated. Among the surface pretreatments in NH3, NO, N2O and TCE ambients, the TCE pretreatment gives the least interlayer growths the lowest interface-state density, the smallest gate leakage and the highest reliability. All these improvements should be ascribed to the passivation effects of Cl2 and HC1 on the structural defects in the interlayer and at the interface, and also their gettering effects on the ion contamination in the gate dielectric.     

Density-functional theory study of the geometries,stabilities, and electronic properties of Au n Rb (n = 1–10) clusters: comparison with pure gold clusters

The density functional method with the relativistic effective core potential has been employed to investigate systematically the geometric structures, relative stabilities, growth-pattern behavior, and electronic properties of small bimetallic Au _n Rb (n?=?1–10) and pure gold Au _n (n?≤?11) clusters. For the geometric structures of the Au _n Rb (n?=?1–10) clusters, the dominant growth pattern is for a Rb-substituted Au _{n +1} cluster or one Au atom capped on a Au _{n –1}Rb cluster, and the turnover point from a two-dimensional to a three-dimensional structure occurs at n?=?4. Moreover, the stability of the ground-state structures of these clusters has been examined via an analysis of the average atomic binding energies, fragmentation energies, and the second-order difference of energies as a function of cluster size. The results exhibit a pronounced even–odd alternation phenomenon. The same pronounced even–odd alternations are found for the HOMO–LUMO gap, VIPs, VEAs, and the chemical hardness. In addition, about one electron charge transfers from the Au _n host to the Rb atom in each corresponding Au _n Rb cluster.     

Evidence of GeO volatilization and its effect on the characteristics of HfO2 grown on Ge substrate

HfO₂ films are deposited by atomic layer deposition (ALD) using tetrakis ethylmethylamino hafnium (TEMAH) as the hafnium precursor, while O₃ or H₂O is used as the oxygen precursor. After annealing at 500℃ in nitrogen, the thickness of Ge oxide's interfacial layer decreases, and the presence of GeO is observed at the H₂O-based HfO₂ interface due to GeO volatilization, while it is not observed for the O₃-based HfO₂. The difference is attributed to the residue hydroxyl groups or H₂O molecules in H₂O-based HfO₂ hydrolyzing GeO₂ and forming GeO, whereas GeO is only formed by the typical reaction mechanism between GeO₂ and the Ge substrate for O₃-based HfO₂ after annealing. The volatilization of GeO deteriorates the characteristics of the high-κ films after annealing, which has effects on the variation of valence band offset and the C–V characteristics of HfO₂/Ge after annealing. The results are confirmed by X-ray photoelectron spectroscopy (XPS) and electrical measurements.     

Effect of modification of S-terminated Ge(1 0 0) surface on ALD HfO2 gate stack

When S-termination on a Ge(1 0 0) surface was desorbed at an elevated temperature and an atomic layer deposition (ALD) HfO₂ film was deposited, interfacial thickness was less than 1 nm. As a result, the equivalent oxide thickness (EOT) of the stack on the initially S-terminated surface was thinner than that deposited on the O₃-oxidized surface, while HfO₂ film thickness was almost identical on both surfaces. Nevertheless, the HfO₂ stack on the initially S-terminated surface exhibited improved leakage current characteristics due to an increase in barrier height. Its thinner but robust interface will contribute to the scaling down of gate oxide integrity.     

Effects of N2 and NH3 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics

The remote plasma nitridation (RPN) of an HfO₂ film using N₂ and NH₃ has been investigated comparatively. X-ray photoelectron spectroscopy and Auger electron spectroscopy analyses after post-deposition annealing (PDA) at 700 °C show that a large amount of nitrogen is present in the bulk film as well as in the interfacial layer for the HfO₂ film nitrided with NH₃-RPN. It is also shown that the interfacial layer formed during RPN and PDA is a nitrogen-rich Hf-silicate. The C-V characteristics of an HfO_xN_y gate dielectric nitrided with NH₃-RPN have a smaller equivalent oxide thickness than that nitrided with N₂-RPN in spite of its thicker interfacial layer.     

Energy absorption and exposure build-up factors in hydroxyapatite

The effective atomic number (Z_eff) and electron density (N_el) of hydroxyapatite (HA) and cortical bone have been computed for total photon interaction in the wide energy range of 1 keV–100 GeV using WinXCom. The variations of effective atomic number and electron density with energy of HA are compared with that of cortical bone. GP. fitting method has been used to compute energy absorption and exposure build-up factor of HA for wide energy range (0.015 MeV–15 MeV) up to the penetration depth of 40mean free path. The computed absorption build-up factor is used to estimate specific absorbed fraction of energy (Ф) and relative dose of photon in HA. Build-up factor increases with increase of penetration depth. The results of the present paper will also help in estimating safe dose levels for radiotherapy patients and also will be useful in dosimetry and diagnostics.     

Swift ion irradiation effect on high-k ZrO2- and Al2O3-based MOS devices

This paper describes the heavy ion-induced effects on the electrical characteristics of reactively sputtered ZrO₂ and Al₂O₃ high-k gate oxides deposited in argon plus nitrogen containing plasma. Radiation-induced degradation of sputtered high-k dielectric ZrO₂/Si and Al₂O₃/Si interface was studied using 45?MeV Li³⁺ ions. The devices were irradiated with Li³⁺ ions at various fluences ranging from 5?×?10⁹ to 5?×?10¹²?ions/cm². Capacitance–voltage and current–voltage characteristics were used for electrical characterization. Shift in flat band voltage towards negative value was observed in devices after exposure to ion radiation. Post-deposition annealing effect on the electrical behavior of high-k/Si interface was also investigated. The annealed devices showed better electrical and reliability characteristics. Different device parameters such as flat band voltage, leakage current, interface defect density and oxide-trapped charge have been extracted.The surface morphology and roughness values for films deposited in nitrogen containing plasma before and after ion radiation are extracted from Atomic Force Microscopy.