Surface modification study of low energy electron beam irradiated polycarbonate film

The effect of low energy electron beam irradiation on polycarbonate (PC) film has been studied here. The PC film of thickness 20 μm was exposed by 10 keV electron beam with 100 nA/cm² current density. The irradiated film was characterized by mean of X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and residual gas analyzer (RGA). Formation of unsaturated bonds and partial graphitization of the surface layer are measured by XPS. Results of the AFM imaging shows electron implantation induce changes in surface morphology of the polymer film. The residual gas analyzer (RGA) spectrum of PC is recorded in situ during irradiation. The results show the change in cross-linking density of the polymer at the top surface.     

氢化作用对低能电子束辐照下GaN发光演变的影响

结合氢在GaN中的扩散特性,运用阴极荧光（CL）谱,对氢化前后低能电子束辐照下GaN带边发光强度的演变进行了研究.实验发现,氢化前GaN在低能电子束辐照下带边发光强度呈现衰减的趋势,而氢化后带边发射强度先上升后衰减,而且氢化后的衰减比氢化前弱.1 h辐照过程中,氢化后GaN带边发光强度的变化比氢化前要小很多.另外,实验中发现经过氢化处理的GaN在辐照后20 h内没有观察到带边发射强度的恢复.研究表明氢原子在GaN中可以钝化缺陷来增强发光,但这种钝化缺陷的作用必须通过克服高的扩散势垒来实现,而低能电子束可以 关键词： 阴极荧光 低能电子束 氢化 演变     

Molecular depth profiling of polymers with very low energy ions

The need for a molecular depth profiling technique to study organic layers has become a strong incentive in the SIMS community in the last few years, especially with the recent successes obtained with cluster ion beam depth profiling. In this work, we have investigated a thoroughly different approach by using very low energy (down to 200 eV) monoatomic or diatomic ions to sputter organic matter. Quite surprisingly, we were able to retain specific molecular information on various polymers even at very high fluence.Polymethylmethacrylate (PMMA) and polyethylene terephthalate (PET) films were depth-profiled with 200 eV Cs⁺ and 500 eV O₂⁺ ions. With 200 eV Cs ions, the best profiles were obtained in the negative mode, due to a strong negative ionisation yield enhancement related to Cs retention in the polymer. A relatively high and stable signal from the most characteristic ions was measured all over the layer.With 500 eV O₂⁺, real molecular depth-profiles were also obtained in both the positive and the negative modes. Once again, the main characteristic fragments of PET or PMMA remain detectable with stable yields all over the profile.     

低能离子注入植物种子的深度分布及生物效应机理研究

采用四种物理测量方法：扫描电子显微镜和能量色散x射线分析，质子激发x荧光分析，双光子激光扫描显微技术和正电子湮没技术测定了能量为200keV V⁺ 注入干花生种 子的深度分布.测量结果表明，注入的低能离子在干种子花生内的深度远比TRIM95的理论计算值为高.对低能离子注入植物种子后的生物效应的机理进行了讨论. 关键词： 低能离子注入 植物种子 深度分布 生物效应机理     

离子束修形中光学元件表面热量沉积数值模拟

根据Sigmund溅射能量沉积理论建立了低能离子入射光学元件引起的能量扰动层厚度模型．理论推导了离子束倾斜入射时光学元件表面的束流密度,并建立了低能离子束对光学元件的热量沉积模型．采用MonteCarlo方法模拟了低能离子与熔石英光学表面的相互作用．分析了离子能量、离子类型、入射角度等参数对光学元件热量沉积和扰动层深度的影响规律．以离子束沉积在工件的能量作为热源,采用有限元分析软件ANSYS模拟了离子束入射工件的温度场分布、温度梯度场分布和温度应力分布．入射表面温度和热梯度呈高斯分布,束斑中心最高并向工件边缘逐渐减小．入射表面束斑区域受热膨胀,其膨胀受到外环区域的制约,从中心区域到大约束斑半峰值半径的区域,所受环向应力为压应力,在大致束斑半峰值半径以外区域为拉应力．     

Surface modification of TA2 pure titanium by low energy high current pulsed electron beam treatments

Surface integrity changes of TA2 pure titanium including surface topography, microstructure and nanohardness distribution along surface layer were investigated by different techniques of low energy high current pulsed electron beam treatments (LEHCPEBTs). The surface topography was characterized by SEM. Moreover, the TEM observation and X-ray diffraction analysis were performed to reveal the surface modification mechanism of TA2 pure titanium by LEHCPEBTs. The surface roughness was modified by electron beam treatment and the polishing mechanism was analyzed by studying the cross section microstructure of electron beam treated specimens by SEM and TEM. The results show that the surface finish obtains good polishing quality and there is no phase transformation but the dislocations by LEHCPEBT. Furthermore, the nanohardness in the surface modified layer is improved. The remelt and fine-grain microstructure of surface layer caused by LEHCPEBTs are the main polishing mechanism and the reason of modification of surface topography and the increment in nanohardness is mainly due to the dislocations and fine grains in the modified layer induced by LEHCPEBT.     

Conductivity modification of ZnO film by low energy Fe ion implantation

In this paper we report the structural, optical and electrical behaviours of ZnO films implanted with 300 keV Fe¹⁰⁺ ions. From UV-vis spectroscopy it is observed that the band gap of the films decreases after implantation. Photoluminescence yield seems to increase in the implanted samples. From Hall measurements it is observed that the unimplanted sample shows n-type conductivity for the entire temperature range (100-300 K), whereas after implantation the samples show p-type conductivity for ≤200 K. The DC resistivity of the implanted samples is found to be lower than that of the unimplanted sample. We have found that the magnetoresistance of our samples is positive in the temperature range 200-300 K, but it becomes negative below 200 K.     

离子能量分析器测量特性的仿真研究

针对空间等离子体及其模拟环境、空间原子氧及其模拟环境对离子能谱测量的需要,利用仿真软件COMSOL,对离子能量分析器的低能离子测量特性进行了仿真研究。介绍了离子能量分析器的工作原理,对离子能谱测量过程进行了公式推导。通过对三种待选仪器设计方案进行离子透过率仿真分析,确定了一种较优的仪器设计方案。多种离子温度下的误差分析结果也表明,该设计方案能够较为准确地测量离子能量分布。分析了电场畸变、等离子鞘层、栅网对齐方式和离子温度对测量结果的影响,根据仿真结果对一些仿真实验现象做出了合理的解释。     

Computational study of low energy ion surface hyperchanneling

Classical ion trajectory simulations using the scattering and recoiling imaging code (SARIC) have been applied to study the low energy ion surface hyperchanneling phenomenon. It was found that the ion-surface interaction geometry, projectile type, surface chemisorbed hydrogen, and phonon amplitudes had a profound effect on the scattered ion trajectories. It is possible to determine the surface Debye temperature through analysis of the scattering yields and angular distributions. The simulations will find application in delineation of classical ion trajectories for specific as well as generic ion surface interactions.     

强流重离子束驱动的高能量密度物理研究进展

强流高能离子束可以准等容加热任何高密度样品,制备出尺度大、状态均匀、内部无冲击波的高能量密度物质,为实验室研究高能量密度物理提供了一种独特的新手段。介绍了国内外典型的强流重离子加速器装置及其与高能量密度物理相关的关键参数设计和研究规划;展示了基于粒子和流体模拟的离子束驱动高能量密度物质产生和状态演化规律进展;介绍了一套兼具高时空分辨和高穿透力的高能电子成像诊断技术;分析了中低能区离子束与等离子体相互作用过程中的碰撞和电荷交换微观机制,以及激光加速超短超强离子束在等离子体中的非线性输运和欧姆能损机制。     

低能质子在半导体材料Si 和GaAs中的非电离能损研究

非电离能损(NIEL)引起的位移损伤是导致空间辐射环境中新型光电器件失效的主要因素.由于低能时库仑相互作用占主导地位，一般采用Mott-Rutherford微分散射截面，但它没考虑核外电子库仑屏蔽的影响.为此，本文采用解析法和基于Monte-Carlo方法的SRIM程序计算了考虑库仑屏蔽效应后低能质子在半导体材料Si,GaAs中的NIEL，SRIM程序在计算过程中采用薄靶近似法, 并与其他作者的计算数据和实验数据进行了比较.结果表明：用SRIM程序计算NIEL时采用薄靶近似法处理是比较合理的，同时考虑库仑     

低能氩离子束对多孔铝阳极氧化膜表面的刻蚀效应研究

用低能氩离子束(Ar⁺)处理了多孔铝阳极氧化膜(AAO)表面.扫描电子显微镜和原 子力显微镜结果表明，Ar⁺束刻蚀不仅可以有效地去除AAO反面阻挡层，还可使A AO表面产生多种特殊的形貌，如采用倾角入射可使其表面产生波纹，倾角入射同时旋转样品 台，可实现表面抛光.并结合Bradley和Harper提出的无定形材料表面波纹的形成和演化理论 解释了AAO表面波纹的特征. 关键词： 多孔铝阳极氧化膜 离子束刻蚀     

低能质子在半导体材料Si 和GaAs中的非电离能损研究

非电离能损(NIEL)引起的位移损伤是导致空间辐射环境中新型光电器件失效的主要因素.由于低能时库仑相互作用占主导地位,一般采用Mott-Rutherford微分散射截面,但它没考虑核外电子库仑屏蔽的影响.为此,本文采用解析法和基于Monte-Carlo方法的SRIM程序计算了考虑库仑屏蔽效应后低能质子在半导体材料Si,GaAs中的NIEL,SRIM程序在计算过程中采用薄靶近似法, 并与其他作者的计算数据和实验数据进行了比较.结果表明：用SRIM程序计算NIEL时采用薄靶近似法处理是比较合理的,同时考虑库仑 关键词： 低能质子 非电离能损 硅 砷化镓     

低碰撞能下Ne原子对LiH分子转动猝灭的研究

用密耦方法首次研究了Ne原子和LiH分子低能碰撞下的转动猝灭过程.在碰撞能低于10-4cm-1时,弹性截面趋于常数值,非弹性截面随碰撞速度减小线性增加,遵循Wigner定则预言的趋势.对于一个给定的能量,总的猝灭截面是随着初始j的增加而减少的.当能量在0.01~100 cm-1范围内,弹性和非弹性截面均比其它的体系表现出更复杂的振荡行为,这主要是由于体系具有强的各向异性以及它们具有两个吸引阱而造成的.计算表明,在零温极限下,猝灭速率系数达到10-11cm3s-1数量级.当j=7速率系数出现反转结构.     

Anisotropic energy distribution of sputtered atoms induced by low energy heavy ion bombardment

The theory of anisotropic sputtering published in Phys. Rev. B 71(2), 026101 (2005) and Radiat. Effects Defects Solids 159(5), 301 (2004) has been modified and used to calculate the sputtering yield energy distributions for copper, tungsten, and aluminum targets bombarded by low-energy argon ion. As usual, the electronic stopping is ignored in the analysis. The present theory (modified Sigmund’s theory) has been shown to fit the corresponding experimental results of sputtering yield energy distributions well, except for the cases where the larger ion incident angle and larger sputtering emission angles were considered. The larger discrepancy between the present theory and the experimental result in the latter cases is probably due to the influence of direct recoil atoms on the energy spectrum. Compared with Falcone’s analytical theory, the present theory can reproduce much better experimental results of sputtering phenomena. The fact clearly demonstrates the intrinsic relation between the ion–energy dependence of the total sputtering yield and the sputtering yield energy distribution and suggests the great importance of momentum deposited on the target surface in the physical sputtering     

Some relations of the diffusion constant of latent tracks in polymers and the ion energy loss

Measurements of the diffusion constant and the permeability of ion irradiated Makrofol KG (polycarbonate) sheets have been done with Argon and Nitrogen as diffusion gas. The polymers were irradiated at the “Gesellschaft für Schwerionenforschung” (GSI, Germany) with Uranium and Gold ions with energies of about 10 MeV/nuc. The fluence varies from 3·10⁹ to 4·10¹¹ ions/cm². For the irradiation the material was put together in stacks with layers of 8 μm thickness. This allows to relate a definite amount of energy loss to each layer and to examine the dependence of the diffusion constant and the permeability on it. For comparison electron irradiated and pristine material (i.e. the untreated material) were also measured.

The general tendency shows an increase of the diffusion constant and the permeability with growing energy loss up to a certain limit. In case of the highest energy loss the material changes its appearance and the diffusion constant and the permeability values are remarkable lower than those of the pristine material. A first trail of explanation might give the three-zone-model presented in this paper.     

Electronic stopping power of polymers for heavy ions in the ion energy domain of LSS theory

LSS based computed electronic stopping power values have been compared with the corresponding measured values in polymers for heavy ions with Z = 5–29, in the reduced ion velocity region, v_red ≤ 1. Except for limited v_red  0.6–0.85, the formulation generally shows significantly large deviations with the measured values. The ζ factor, which was approximated to be Z₁^1/6, involved in LSS theory has been suitably modified in the light of the available experimental stopping power data. The calculated stopping power values after incorporating modified ζ in LSS formula have been found to be in close agreement with measured values in various polymers in the reduced ion velocity range 0.35 ≤ v_red ≤ 1.0.     

测量离子束横向截面的闪烁体屏的热分析

针对基于闪烁屏-CCD(电荷耦合元件)相机的氘离子束横向强度分布测量系统,利用ANSYS软件模拟计算了在直流及脉冲模式下,能量100 keV、束斑直径3 mm氘离子轰击造成的Al₂O₃, SiO₂以及锗酸铋(BGO)三种候选闪烁体材料的表面温度变化。结果表明,在30 μA的直流氘离子束轰击下,闪烁体表面温度随辐照时间急剧地升高。持续时间10 min的氘离子束轰击将使三种材料前表面的温度分别升高131,234和649 ℃。对于峰值流强30 μA、重复频率1 Hz、脉宽5 μs的重复频率脉冲氘离子束,每个脉冲引起的三种闪烁屏表面的温度升高均小于0.05 ℃,且长时间的离子辐照基本不会造成闪烁屏的表面温度有明显的升高。对于脉宽5 μs的单脉冲氘离子束,三种材料的表面温度均随离子流强近似呈线性地增加。在单脉冲模式下,Al₂O₃,SiO₂以及BGO闪烁屏能允许的最高离子流强分别为2.32,1.08和0.72 A,超过此流强其表面温度将达到熔点。     

低能二次电子对微波输能窗击穿现象的影响

在微波输能窗次级电子倍增效应的模拟研究中,往往忽视低能电子的作用。基于Monte Carlo算法,模拟输能窗次级电子倍增规律,研究了经典的Vaughan模型、Vincent模型和Rice模型三种二次电子发射模型下次级电子倍增效应的差异,通过拟合倍增敏感曲线,获得了低能电子对切向和法向电场作用下输能窗次级电子倍增效应的影响。模拟结果表明,当切向电场作用时,三个发射模型得到的敏感曲线几乎重合,低能电子对敏感曲线的影响甚微,其中Rice模型的敏感区域最大。当法向电场作用时,由Vincent模型拟合得到的敏感区域远大于其他两个模型。     

强流脉冲离子束辐照双层靶能量沉积的数值模拟

利用拟合实验测得的TEMP Ⅱ型加速器磁绝缘二极管电压波形及其焦点附近束流密度曲线,建立了Gauss分布模型.采用Monte Carlo方法研究了强流脉冲离子束与铝材镀有不同厚度金膜的双层靶(金膜与铝材合称为双层靶)之间的相互作用,模拟了能量沉积的演化过程和随不同金膜厚度的变化情况.对脉冲离子束强化薄膜粘结性进行了探讨. 关键词： 强流脉冲离子束 双层靶 能量沉积 Monte Carlo方法