紧凑型爆炸脉冲电源

采用等效电路模型程序——BCYSSYS对系统参数进行优化,设计了04型爆磁压缩发生器及用04型发生器驱动的紧凑型爆炸脉冲电源。紧凑型爆炸脉冲电源长度小于1.2 m,直径0.4 m,质量约100 kg。实验结果表明:04型爆磁压缩发生器能够在3μH电感负载上获得脉宽约10μs、峰值为100 kA的脉冲大电流输出;当负载电阻为8.7Ω时,输出电功率大于20 GW。典型实验结果与采用BCYSSYS程序得到的计算结果吻合较好,验证了BCYSSYS程序用于爆炸脉冲电源理论设计的可行性。     

MC55低阻抗强流脉冲电子加速器研制

介绍了MC55低阻抗强流脉冲电子加速器的结构及主要技术参数,给出了加速器的初步调试结果。该加速器由Marx发生器、10Ω水介质单筒形成线、高压自击穿气体开关、水介质传输线和真空二极管组成。经过初步调试,该加速器可以产生电压500 kV,电流50 kA,脉冲宽度50 ns的强流电子束。目前MC55加速器已应用于同轴虚阴极振荡器高功率微波源的实验研究。     

强流辐照钛合金表面特征的原子力显微研究

利用原子力显微术的轻敲模式(TM-AFM),并采用形貌与相位同时成像技术对强流脉冲离子束(IPIB)辐照前后试样表面进行了系统标征,得到了试样表面的高度像及相位像的衬度.分析结果表明:在高流强密度、多次脉冲条件下,IPIB辐照可使试样表面变得光滑化,从相位像中可以定性分析出辐照后表面硬度也得到一定程度的提高.     

射频离子源离子束成分光谱测量

为HL-2A 装置中性束注入器研制了引出束功率为1MW 的射频离子源。在测试平台上,实验离子源已经成功引出了束能量和束电流分别为35keV 和12.4A、束质子比为79%、脉宽为100ms 的氢离子束,达到了设计束功率要求的44%。在射频离子源实验平台上,利用多普勒频移光谱方法测量了离子源引出束流成分比例,对比了束流成分和射频离子源引出束流之间的关系。实验数据分析表明,在10A 引出束流的情况下,离子流成分 H⁺ ₁、H⁺ ₂ 和H⁺ ₃ 分别为75%、18%和7%。并且当引出束流从3.3A 升至10.4A 时,H⁺ ₁ 从37%升至78%,而H⁺ ₃ 则从19%降至9%。     

Development of an intense pulsed metallic ion beam source

Intense pulse metallic ion beams (Al⁺, Cu⁺, and Pb⁺) were produced by a magnetically insulated ion diode having a metal anode. Metal ion plasmas on the anode could be generated through enhanced electron bombardment by using a radial cathode. The energy, current density, and duration time of the lead ion beam were 30~140 keV, ~7.5 A/cm² (total ion current ⩾0.5 kA), and 800 ns, respectively. The ion current density exceeded the space-charge-limited current by a factor of 50. The lead ions in the first-to-sixth states of ionization were detected by a Thomson-parabola ion-spectrometer together with light loss, such as C⁺ and O ⁺. The ratio of the ion current of heavy metals to the total ion current was measured using a magnetic mass analyzer with a charge collector. The ratio was about 90% for a lead ion beam and 20~50% for Al and Cu ion beams     

双脉冲电子束源实验研究

 利用现有2MeV直线感应注入器,通过改造,将其次级功率源和8个感应腔分成2组,使之交替工作,建立了一台双脉冲电子束源。二极管电压脉冲幅度达到1MeV,电子束脉冲持续时间为120ns,脉冲间隔可以根据需要在100~500ns间进行调节。实验结果表明：该双脉冲电子束源可以产生双脉冲电子束,其电压幅度差值小于2%,束流可达3kA,并且工作稳定,利用该装置可以进行多脉冲二极管物理和天鹅绒多脉冲发射特性实验研究。     

ECR ion source based low energy ion beam facility

Mass analyzed highly charged ion beams of energy ranging from a few keV to a few MeV plays an important role in various aspects of research in modern physics. In this paper a unique low energy ion beam facility (LEIBF) set up at Nuclear Science Centre (NSC) for providing low and medium energy multiply charged ion beams ranging from a few keV to a few MeV for research in materials sciences, atomic and molecular physics is described. One of the important features of this facility is the availability of relatively large currents of multiply charged positive ions from an electron cyclotron resonance (ECR) source placed entirely on a high voltage platform. All the electronic and vacuum systems related to the ECR source including 10 GHz ultra high frequency (UHF) transmitter, high voltage power supplies for extractor and Einzel lens are placed on a high voltage platform. All the equipments are controlled using a personal computer at ground potential through optical fibers for high voltage isolation. Some of the experimental facilities available are also described.     

分段表面放电沉积效率研究

利用一种结构紧凑的分段表面放电辐射源模块，详细研究了在不同电压、电容、气压实验条件下回路等效电阻、等效电感及放电能量沉积效率的变化规律，利用四分幅相机拍摄获得了不同实验条件下的放电等离子体通道图像，分析讨论了放电等离子体运动对放电能量沉积效率的影响，提出了提高能量放电沉积效率的有效途径。     

宽束冷阴极离子源分时中和技术的研究

离子束辅助镀膜沉积过程中,绝缘薄膜表面的电荷积累效应严重影响了薄膜质量。通过对宽束冷阴极离子源引出栅部分的改进,采用分时引出电子和离子方法,使正负电荷中和,以消除薄膜表面的放电现象,并对引出电子束的束流密度、能量、发射角等参数进行了测试。实验结果表明：在引出电压为600V时,电子的平均能量为100eV左右;引出电子束的发射角可以达到±40°,在±15°范围内的束流密度波动小于±5%。引出电子的束流密度较同参数下的离子束流密度小,通过调节脉冲电源的占空比,可达到很好的中和效果。     

TEM study of ion implanted GaAs after pulsed electron beam annealing

Abstract

(001) GaAs single crystals were implanted with 150 keV Cr⁺ ions using a dose of 5 × 10¹⁵ ions cm^?2. The amorphized surface layers were subjected to pulsed electron beam annealing at energy densities in the range 0–1.3 J cm^?2. A detailed TEM investigation of the damaged and annealed surface layer was conducted. These observations were correlated with backscattering results.     

直线变压器驱动源磁芯能量传递效率

磁芯是直线变压器驱动源(LTD)的关键部件之一,起着初、次级能量传递和次级电压感应叠加的作用,磁芯的能量传递效率对LTD系统的效率、体积和重量影响显著。对LTD系统中影响磁芯能量传递效率的原因进行了初步的分析,并利用Pspice软件的非线性磁芯模型对磁芯的工作过程和损耗进行了模拟计算,最后对LTD磁芯的能量传递效率进行了初步的实验研究,在工作电压为20 kV时、脉宽约220 ns时,在2.8 Ω负载上获得了大于60%的能量传递效率。     

射频离子源束流特性分析

介绍了为HL-2A 装置设计的引出束功率为1MW 的射频离子源研制情况。目前,在测试平台上,该离子源已经成功引出了束能量和束电流分别为35keV 和12.4A、束质子比为79%、脉宽为100ms 的氢离子束,达到了其设计束功率的44%。用红外热成像的方法测量了离子束能量密度分布。结果表明,在距离引出系统地电极 1.3m 处,束密度分布遵循高斯分布。引出束的最佳导流系数为1.689×10^–6A•V^-3/2 左右,随射频功率改变有较小的变化。根据这些实验结果,采取了相关改进措施来改善离子源的引出束性能。     

Droplets from the metal surfaces irradiated by a high-intensity pulsed ion beam

Droplet behavior from the surfaces of pure metals Ti and Al ablated by high-intensity pulsed ion beam (HIPIB) with an ion current density from 30 to 200 A/cm² has been investigated to explore the mechanism of mass transfer on HIPIB-irradiated materials. Droplet ejection on the ablated metal surface is studied by scanning electron microscope observation, energy dispersive X-ray spectroscopy analysis and profilometer measurement. The presence of ejected droplets from the irradiated surfaces is detected on both the surfaces of irradiated metals and substrates locating adjacent to the ablated surfaces. Moreover, the number density of droplets observed on both the surfaces tends to increase with increasing the ion current density. This phenomenon correlates to the fact that higher ion-beam intensity led to a more intense ablation, i.e. a severer droplet ejection. In addition, surface roughness (R_a) for the respective metals is continuously increased with increasing the ion current density, indicating a more significant disturbance on the melted surfaces caused by the correspondingly severer droplet ejection. Combined with the previous finding of selective ablation on titanium, it is concluded that the droplet ejection is the efficient cause of cratering and disturbance on HIPIB-ablated surfaces.     

用于中性束注入的大功率射频离子源激励器研制

建立了一个等离子体射频激励器,工作气体为氢气,工作气压为0.3Pa,激励器陶瓷桶直径300mm,工作频率1MHz。实现了RF等离子体激发放电,在输入射频功率16kW条件下,采用朗缪尔探针测得的等离子体密度>10¹⁸m^-3,初步建立了一个RF等离子体源实验平台。     

Swift heavy ion beam mixing at V/Si interface

Vanadium silicides are of increasing interest because of applications in high temperature superconductivity and in microelectronics as contact materials due to their good electrical conductivity. In the present work ion beam induced mixing at Si/V/Si interface has been investigated using 120 MeV Au ions at 1 × 10¹³ to 1 × 10¹⁴ ions/cm² fluence at room temperature. V/Si interface was characterized by Grazing Incidence X-Ray Diffraction (GIXRD), Atomic Force Microscopy (AFM), Rutherford Backscattering Spectrometry (RBS) and Cross-sectional Transmission Electron Microscopy (XTEM) techniques before and after irradiation. It was found that the atomic mixing width increases with ion fluence. GIXRD and RBS investigations confirm the formation of V₆Si₅ silicide phase at the interface at the highest ion irradiation dose.     

Design of magnet and control of the beam emittance for Penning H- ion source

The design requirement and principle of the deflection magnet for Magnetron and Penning H- ion source are discussed.It is proved that there exists a maximum emittance for the beam that may be transformed by the magnet into a state with equal Twiss parameters of αr=αy and βr =βy,which is the requisite condition to get a minimum emittance at the entrance of RFQ after transporting by a LEBT with solenoids.For this maximum emittance,the corresponding magnetic field gradient index is 1.     

Design of magnet and control of the beam emittance for Penning H^- ion source

The design requirement and principle of the deflection magnet for Magnetron and Penning H- ion source are discussed. It is proved that there exists a maximum emittance for the beam that may be transformed by the magnet into a state with equal Twiss parameters of αr =αy and βr =βy, which is the requisite condition to get a minimum emittance at the entrance of RFQ after transporting by a LEBT with solenoids. For this maximum emittance, the corresponding magnetic field gradient index is 1.     

ECR离子源中的微波功率在线测量

 在中子发生器中采用ECR离子源是一种新技术。由于受结构的限制,ECR离子源不能像高频源离子源那样通过观察气体放电的颜色判断其工作状态,所以在运行中调节状态非常困难。解决这个问题的方法是：用定向耦合器加微波小功率计的方法在线测量ECR离子源的微波入射功率,通过微波入射功率可以直接得到ECR离子源引出离子束流的大小,从而推断微波信号源的放电过程是否正常,然后调整ECR离子源,最终使中子发生器工作在最佳状态。从ECR离子源后面的引出电极测得的最大束流为20 mA,且工作长时间稳定,当微波功率在160 W~500 W之间时,放电效果较好,离子束流随微波功率的增加而增加。     

流脉冲离子束辐照对DZ4合金性能的影响

 用含Cⁿ⁺和H⁺、加速电压250 kV、脉冲宽度70 ns、束流密度160 A/cm²的强流脉冲离子束辐照DZ4合金，辐照次数分别为2，5，10，15。实验结果表明：辐照后样品的表面出现了熔坑，多次脉冲辐照后样品的表面熔坑边缘模糊甚至消失。近表面存在厚1~2 mm的重熔层，晶粒较细，晶界模糊；熔坑周围富集Cr和Mo等元素;强流脉冲离子束辐照处理后DZ4合金的耐腐蚀性能明显提高，腐蚀速率下降,这是由于辐照减弱了由于晶界和晶粒本体的成分差异而引起的晶界腐蚀；同时离子束辐照后的DZ4合金在高温氧化时更容易形成一层连续的保护性氧化物，其主要成分是致密的Al₂O₃，使得DZ4合金的耐高温氧化性能也有所改善。     

Phase transformation of graphite irradiated by high-intensity pulsed ion beams

The microstructure and morphology of graphite irradiated by high-intensity pulsed ion beams (HIPIB) has been studied by varying the ion current density as 200, 350 and 1500 A/cm² with one to five shots. Phase transformation from graphite to diamond-like carbon (DLC) on the HIPIB-irradiated graphite was confirmed by Raman spectroscopy where a typical broadened asymmetric peak appeared in the wavenumber range of 1100-1700 cm⁻¹. Formation of DLC on the irradiated graphite strongly depended on the HIPIB parameters and preferably took place at the medium ion current density of 350 A/cm² up to five shots. Numerical simulation of ablation process was performed to explore the transformation mechanism of DLC from graphite irradiated by HIPIB. The calculation showed that the temperature profile in irradiated graphite at 350 A/cm² is almost identical to that at 200 A/cm², showing a deeper heat-affected zone in comparison with that of 1500 A/cm². Moreover, the ablation depth per shot is around 0.8 μm at 350 A/cm², higher than that of 0.4 μm at 200 A/cm² and much lower than that of 8.4 μm at 1500 A/cm², respectively. The experimental and numerical results indicate that a proper temperature and pressure repetitively created in the top layer of ablated graphite during HIPIB irradiation facilitates the phase transformation.