Commensurability oscillations in NdBa2Cu3Oy single crystals

Commensurability between inter-vortex distance and crystal lattice constant is investigated by angular dependent magnetization in very pure twinned and twin-free NdBa₂ Cu₃ O_y single crystals. With increasing temperature the incommensurate states split up and become finally commensurate with half the vortex distance. These new commensurate states are related to a substructure of the intrinsic pinning potential within the unit cell and discussed with respect to temperature, field, anisotropy, and twin structure.     

Photographic sensitivity of silver halide emulsions (on the light-intensity factor determining the mechanism of chemical sensitization)

Some evidence which indicates that the role of chemical sensitization is different for exposures to low and to high intensities have been demonstrated with a model emulsion. This paper presents a review of several published reports and offers some new information. The author concludes that the sensitivity specks on the surface of the grains are responsible for sensitivity at high intensities, whereas the silver-ion gelatin complexes and a small group of silver-atoms surrounded by gelatin attached to the grain surface are responsible for sensitivity at low intensities.     

X-ray study on the phase transitions in triammonium hydrogen disulfate crystals and deuterated crystals

The structural phase transitions in triammonium hydrogen disulfate crystals and deuterated crystals below room temperature have been studied by X-ray diffraction. Three phases are observed in the temperature range from 25°C down to — 160°C. The space groups in three different phases are identified as C2/c, P2/n (or Pn), and C2 for (NH₄)₃H(SO₄)₂ and (ND₄)₃D(SO₄)₂ crystals. No isotope effect on the structural phase transitions in these crystals could be detected by these studies. The occurrence of structural phase transitions caused by the reorientation of SO₄ groups and/or the shift of oxygen atoms from the sulfate atom in the SO₄ group are suggested from the diffraction photographs.     

SiO2/Si衬底上石墨烯的制备与结构表征

在分子束外延(MBE)设备中,利用直接沉积C原子的方法在覆盖有SiO₂的Si衬底(SiO₂/Si)上生长石墨烯,并通过Raman光谱和近边X射线吸收精细结构谱等实验技术对不同衬底温度(500℃,600℃,700℃,900℃,1100℃,1200℃)生长的薄膜进行结构表征.实验结果表明,在衬底温度较低时生长的薄膜是无定形碳,在衬底温度高于700℃时薄膜具有石墨烯的特征,而且石墨烯的结晶质量随着衬底温度的升高而改善,但过高的衬底温度会使石墨烯质量降低.衬底温度为1100℃时结晶质量最好.衬底温度较低时C原子活性较低,难以形成有序的C-sp²六方环.而衬底温度过高时(1200℃),衬底表面部分SiO₂分解,C原子与表面的Si原子或者O原子结合而阻止石墨烯的形成,并产生表面缺陷导致石墨烯结晶变差.     

High pressure structural investigations on hexagonal YInO3

Hexagonal (space group P6₃cm) form of YInO₃ has been investigated under high pressure using synchrotron-based angle-dispersive X-ray diffraction and Raman scattering methods. Our experimental investigations suggest that it undergoes the phase transition to a new phase in the pressure range 12–15?GPa, while the ambient hexagonal phase is found to coexist with the new phase up to 29?GPa. DFT based calculations within the LDA approach on the hexagonal phase of YInO₃ showed that the unit cell volume matches well with the experimentally obtained volume at ambient pressure. As the pressure increases, theoretically obtained values of unit cell volume of the hexagonal phase were found to be significantly lower than that of experimentally obtained values. This discrepancy has been corrected using LDA?+?U_In(4d) (Hubbard interaction parameter between Indium 4d electrons) method. We have proposed the high pressure phase of YInO₃ to be orthorhombic with space group Pnma.     

Oxygen vacancy in N-doped Cu2O crystals: A density functional theory study

The N-doping effects on the electronic properties of Cu2O crystals are investigated using density functional theory. The calculated results show that N-doped Cu2O with or without oxygen vacancy exhibits different modifications of electronic band structure. In N anion-doped Cu2O, some N 2p states overlap and mix with the O 2p valence band, leading to a slight narrowing of band gap compared with the undoped Cu2O. However, it is found that the coexistence of both N impurity and oxygen vacancy contributes to band gap widening which may account for the experimentally observed optical band gap widening by N doping.     

Submillimeter wave ESR measurements of metamagnetic Y2Cu2O5

Submillimeter wave ESR system in Kobe University is presented. It covers the frequency region from 60 to 383GHz and can apply the pulsed magnetic field up to 30T. The measurement of Y₂Cu₂O₅ single crystals using our system is presented.     

Specific contact resistivity of silver contacts on highT cYBa2Cu3O7 superconductors

Specific contact resistances of vacuum-evaporated silver contacts on new oxide superconductors, YBa₂Cu₃O₇ are measured using a modified Kelvin test structure. Contact resistivity increases continuously as the temperature decreases down to zero resistance point. AtT _c, its value is ∼0.15 ohm cm² which is high for technological applications. The nature of contacts appears different from that of semiconductor metal structures.     

Rb掺杂C60单晶的相衍变和电子态

在C₆₀单晶超高真空解理面上制备C₆₀的Rb填隙化合物薄膜.用同步辐射光电子能谱研究了相衍变过程.观察到对应于固溶相、Rb₁C₆₀和Rb₃C₆₀的电子态密度分布.当数纳米厚Rb₃C₆₀薄膜在C₆₀单晶（111）解理面形成后，室温条件下进一步沉积Rb至样品表面不产生fcc到bct或bcc结构相变.C_{60 关键词： 4}C₆₀和Rb₅C₆₀吸附相')" href="#">金属性Rb₄C₆₀和Rb₅C₆₀吸附相 60单晶')" href="#">C₆₀单晶 相衍变 同步辐射光电子能谱     

MgF2单晶的THz光谱研究

利用THz时域光谱技术对MgF₂晶体(样品1)和MgF₂：Co晶体(样品2)在0.5—2.5 THz的吸收特性进行了研究.在0.5—2.5 THz波段，样品1吸收系数α(ν)随频率ν增加而增大，最大值为24 cm^-1.样品2的吸收系数比样品1大得多，Co掺杂使晶格吸收带边向低频移动，而且样品2在1.9 THz有吸收峰，吸收系数达到70 cm^-1，由此求出F^--Co²⁺离子键伸缩振动的键力常数K为3.40×10^-2　N/cm.这一结果表明，THz光谱分析有可能成为研究晶体化学键的一种重要手段.利用光学常数之间的关系计算了两个样品在0.5—2.5 THz的介电函数的实部ε₁(ν)，得到样品1的ε₁(ν)值在4.67至4.73之间，样品2的ε₁(ν)值在4.62至5.01之间. 关键词： THz辐射 光谱 2晶体')" href="#">MgF₂晶体     

Studies of phase transitions and ferroelastic domain walls in Pb5Al3F19 crystals by optical measurements

Three phase transitions between 100 and 400 K were previously shown by X-ray diffraction measurements. Such results have been confirmed by optical measurements on crystals. The thermal dependence of the birefringence has been determined. A new phase transformation has been shown at around 590 K not only by optical study but also by dielectric measurements. Ferroelastic domain-walls have been visualized. The sequence transition has been discussed taking into account the various space groups.     

Orthorhombic to tetragonal phase transition in high TC superconductor YBa2Cu3O7-y and NdBa2Cu3O7-z under high pressure

Abstract

X-ray powder diffraction measurements for YBa₂Cu₃O_7-y and NdBa₂Cu₃O_7-y were made at the intense synchrotron radiation source under high pressure up to 5 GPa. These samples were wrapped tightly in platinum foil to avoid deoxidizing atmosphere. The orthorhombic to tetragonal transition temperature increases with pressure in both samples. These results are discussed on the basis of the disordering of the oxygen atoms on the chain sites.     

Photoluminescence and X-ray diffraction studies on Cu2O

Cuprous oxide (Cu₂O) crystals were grown by the two-step crystallization method in air atmosphere conditions from polycrystalline thin copper foils. The method comprises two stages; in the first one the copper plates are oxidized at 1020 °C by some hours in line with its initial thickness. In the second stage, the growth of large crystalline areas is promoted by annealing the Cu₂O samples at 1100 °C for long periods. Raman scattering an X-ray measurements demonstrates the existence of the single-phase Cu₂O. The effects on the crystalline structure and photoluminescence (PL) response were studied as a function of the conditions used in the second stage of the synthesis method. PL spectra were taken from 10 to 180 K to define the main radiative recombination paths. Besides the near band excitonic transitions, two strong emission bands at 720 and 920 nm associated with relaxed excitons at oxygen and copper vacancies were detected. Both excitonic-vacancy bond transitions presented similar intensities that are related to the growth method. X-ray and Raman scattering measurements help to assess the samples crystalline quality.     

DFT studies on the interaction of PtxRuyMz (M = Fe,Ni, Cu,Mo, Sn,x + y + z = 4, x ≥ 1, y ≥ 1) alloy clusters with O2

The reaction mechanism of O₂ dissociation on Pt_xRu_yM_z (M = Fe, Ni, Cu, Mo, Sn, x + y + z = 4, x ≥ 1, y ≥ 1) alloy catalysts have been investigated with density functional theory calculations in this work. For bare alloy clusters, bimetallic clusters are more stable than the ternary alloy clusters. The geometries of the Pt_xRu_yM_z–O₂ system, O–O bond stretching frequency and electronic-structure details have been investigated. The energies of O₂ adsorption on PtRu clusters are slightly higher than those on Pt_xRu_yM_z clusters, and the more charge transfer to O₂ from the metal cluster, the higher O₂ the adsorption energy obtains. The reaction barriers show that the catalytic performance of trimetallic clusters are better than those of bimetallic clusters, and Pt₂RuM clusters exhibit superior catalytic activity for O₂ dissociation. The different performance of these alloy clusters for O₂ dissociation is scrutinised with aid of molecular orbital and natural bond orbital population analysis.     

Studies of LSO:Tb radio-luminescence properties using white beam hard X-ray synchrotron irradiation

A radio-luminescence set-up was installed at the synchrotron light source ANKA to characterise scintillators under the high X-ray photon flux density of white beam synchrotron radiation. The system allows for investigating the radio-luminescence spectrum of the material under study as well as analysing in situ changes of its scintillation behaviour (e.g. under heat load and/or intensive ionising radiation). In this work we applied the radio-luminescence set-up for investigating the radiation damage effects on the luminescence properties of a new kind of thin single crystal scintillator for high resolution X-ray imaging based on a layer of modified Lu₂SiO₅ grown by liquid phase epitaxy on a dedicated substrate within the framework of an EC project (SCIN^TAX).1 The project SCINTAX is funded by the European Community (STRP 033 427), see http://www.scintax.eu.      

Effects of divalent impurities on the fluctuation conductivity of YBa2Cu3O7 single crystals

We have studied experimentally the in-plane fluctuation conductivity near the superconducting transition in single crystal samples of YBa₂Cu₃O₇, Y_0.98Ca_0.02Ba₂Cu₃O₇, YBa_1.9Sr_0.1Cu₃O₇ and YBa₂Cu_2.97Zn_0.03O₇. In order to test the stability of the observed fluctuation regimes, low magnetic fields were applied perpendicular to the Cu-O₂ atomic planes. When the transition is approached from above we first observe a three-dimensional (3D) Gaussian regime then a crossover to a genuine critical region where the exponent is consistent with the predictions of the 3D-XY-E universality class. Decreasing further the temperature towards T_c, our results systematically reveal the occurrence of a regime beyond 3D-XY characterized by a very small critical exponent. We propose that this regime is precursory to a weak first-order superconducting transition driven by antiferromagnetic excitations related to the pseudogap phenomenon. The dilution of divalent impurities in YBa₂Cu₃O₇ does not affect the stability of the fluctuation regime beyond 3D-XY and in the case of Ca doping a further approach towards the first-order behaviour is observed.     

Dielectric properties and relaxation behavior of [TMA]2Zn0.5Cu0.5Cl4 compound

The [TMA]₂Zn_0.5Cu_0.5Cl₄ hybrid material was prepared and its dielectric spectra were measured in the 10⁻¹ Hz-10⁶ Hz frequency range and 200-305 K temperature interval. The dielectric permittivity showed a ferroelectric-paraelectric phase transition at 293 K. Double relaxation peaks are observed in the imaginary part of the electrical modulus, suggesting the presence of grain and grain boundary in the sample. The frequency dependent conductivity was interpreted in term of Jonscher's law: σ(ω)=σ_dc+Aωⁿ. The temperature dependent of the dc conductivity (σ_dc) was well described by the Arrhenius equation: σ_dcT=σ_o×exp(−E_a/kT).     

Al2O3-Y2O3-ZrO2三相复合陶瓷的介电谱研究

采用传统的固相反应法,在1400–1500 ℃下烧结,制备得到Al₂O₃-Y₂O₃-ZrO₂三相复合陶瓷.样品的结构、形貌和电性能分别用X射线衍射(XRD)、扫描电子显微镜(SEM)及介电谱表征.XRD表明此三相复合体系无其他杂相,加入Y₂O₃及ZrO₂后使得Al₂O₃成瓷温度降低;SEM表明此体系晶粒直径为200–500 nm,并且样品随烧结温度的升高而变得更加致密,晶界更加清晰;介电损耗谱中出现峰值弛豫现象,根据Cole-Cole复阻抗谱得出其为非德拜弛豫. 关键词： 2O₃-Y₂O₃-ZrO₂三相陶瓷')" href="#">Al₂O₃-Y₂O₃-ZrO₂三相陶瓷 介电弛豫 阻抗谱 热导率     

Band alignment of Ga2O3/6H-SiC heterojunction

A high-quality Ga₂O₃ thin film is deposited on an SiC substrate to form a heterojunction structure. The band alignment of the Ga₂O₃/6H-SiC heterojunction is studied by using synchrotron radiation photoelectron spectroscopy. The energy band diagram of the Ga₂O₃/6H-SiC heterojunction is obtained by analysing the binding energies of Ga 3d and Si 2p at the surface and the interface of the heterojunction. The valence band offset is experimentally determined to be 2.8 eV and the conduction band offset is calculated to be 0.89 eV, which indicate a type-II band alignment. This provides useful guidance for the application of Ga₂O₃/6H-SiC electronic devices.     

Role of the coupling between strains and order parameter gradient in crystals

The manifestation and the role of coupling between order parameter gradient and strains, or equivalently between order parameter and gradient of strains, is reviewed. Dynamical phenomena occurring in perovskites, and in particular in quantum paraelectric phases, evidenced as a coupling between phonon branches at q≠0, and also in several other systems (quartz, Sn₂P₂Se₆, Cs₂HgBr₄, and other systems satisfying the Lifshitz criterion) in relation with the formation of an incommensurate phase, are presented. Besides, the consequences in relation with domain walls, structure of incommensurate phases, and defects are also discussed.