Effect of swift heavy ion irradiation on photoluminescence properties of ZnO/PMMA nanocomposite films

We report a study on the SHI induced modifications on structural and optical properties of ZnO/PMMA nanocomposite films. The ZnO nanoparticles were synthesized by the chemical route using 2-mercaptoethanol as a capping agent. The structure of ZnO nanoparticles was confirmed by XRD, SEM and TEM. These ZnO nanoparticles were dispersed in the PMMA matrix to form ZnO/PMMA nanocomposite films by the solution cast method. These ZnO/PMMA nanocomposite films were then irradiated by swift heavy ion irradiation (Ni⁸⁺ ion beam, 100 MeV) at a fluence of 1×10¹¹ ions/cm². The nanocomposite films were then characterized by XRD, UV-vis absorption spectroscopy and photoluminescence spectroscopy. As revealed from the absorption spectra, absorption edge is not changed by the irradiation but the optical absorption is increased. Enhanced green luminescence at about 527 nm and a less intense blue emission peak around 460 nm were observed after irradiation with respect to the pristine ZnO/PMMA nanocomposite film.     

Structural and optical modifications in gamma-irradiated polyimide/silica nanocomposite

The structural and optical properties of thin films of polyimide composites with nanosilica particle content of 15?wt%, prepared via sol–gel process, were studied as a function of the gamma dose. The resultant effect of gamma irradiation on the properties of polyimide/silica nanocomposite has been investigated using X-ray diffraction and UV spectroscopy. Absorption and reflectance spectra were collected by a spectrophotometer giving UV-radiation of wavelength range 200–800?nm. The optical data obtained were analyzed and the calculated values of the optical energy gap exhibited gamma dose dependence. The direct optical energy gap for the nonirradiated polyimide/silica nanocomposite is about 2.41?eV, and increases to a value of 2.65?eV when irradiated with gamma doses up to 300?kGy. It was found that the calculated refractive index of the polyamide/silica increases with the gamma dose in the range 50–300?kGy.     

Photo and thermally induced properties change in Bi/Ag/Se trilayer thin film

In this article, we have demonstrated the optical and structural properties change in Bi/Ag/Se trilayer thin films by the influence of thermal and photon energy. The trilayer films prepared by thermal evaporation technique were annealed and laser irradiated at room temperature. The X-ray diffraction study revealed the Ag₂Se phase formation and the surface morphology change is being studied by Field emission scanning electron microscopy. The optical properties of the studied films were characterized by using FTIR spectrophotometer in the wavelength range 400–1200?nm. The reduction of optical band gap by both thermal and laser irradiation is being discussed on the basis of chemical disorderness, defect states and density of localized states in the mobility gap. The Raman shift due to annealing and irradiation supports the changes in the film. The large change in optical band gap in thermal annealing is useful for memory device and waveguide fabrication.     

Structural and optical analysis of 60Co gamma-irradiated thin films of polycrystalline Ga10Se85Sn5

The present study focuses on the effects of gamma irradiation on structural and optical properties of polycrystalline Ga₁₀Se₈₅Sn₅ thin films with a thickness of ～300?nm deposited by the thermal evaporation technique on cleaned glass substrates. X-ray diffraction patterns of the investigated thin films show that crystallite growth occurs in the orthorhombic phase structure. The surface study carried out by using the scanning electron microscope (SEM) confirms that the grain size increases with gamma irradiation. The optical parameters were estimated from optical transmission spectra data measured from a UV–vis-spectrophotometer in the wavelength range of 200–1100?nm. The refractive index dispersion data of the investigated thin films follow the single oscillator model. The estimated values of static refractive index n₀, oscillator strength E_d, zero frequency dielectric constant ε₀, optical conductivity σ_optical and the dissipation factor increases after irradiation, while the single oscillator energy E_o decreases after irradiation. It was found that the value of the optical band gap of the investigated thin films decreases and the corresponding absorption coefficient increases continuously with an increase in the dose of gamma irradiation. This post irradiation changes in the values of optical band gap and absorption coefficient were interpreted in terms of the bond distribution model.     

Effect of nickel-oxide nanoparticle additive concentration and gamma irradiation on the structure and optical properties of polycarbonate

Nanotechnology is one of the world’s most promising new technologies. Pure polycarbonate (PC) and PC–nickel oxide (NiO) nanocomposite films have been deposited using the casting technique. The effects of NiO nanoparticle (NP) concentration (2, 5 and 10?wt%) on the structure and optical properties of PC have been studied. The resultant effect of NiO concentration has been investigated using X-ray diffraction and UV spectroscopy techniques. The results of nanocomposite samples compared to the pristine indicate the proper dispersion of NiO NPs in the PC matrix. Also, the addition of NiO NP to PC with 5% concentration causes a strong intermolecular interaction between NiO and PC, resulted in an increase in refractive index and increase in the amorphous phase. Thus, this sample was chosen to be a subject for further study to investigate the effect of gamma irradiation on its structure and optical properties. Samples from the 5% PC–NiO nanocomposite were irradiated with gamma doses in the range of 20–350?kGy. It is found that the gamma irradiation reduces the optical energy gap that could be attributed to the increase in the structural disorder of the irradiated PC–NiO nanocomposites due to cross-linking. In addition the isotropic character of the nanocomposites has been enhanced, reflected in the increase in refractive index.     

Synthesis of transparent ZnO/PMMA nanocomposite films through free-radical copolymerization of asymmetric zinc methacrylate acetate and in-situ thermal decomposition

In this paper, a new and simple approach for in-situ preparation of transparent ZnO/poly(metyl methacrylate) (ZnO/PMMA) nanocomposite films was developed. Poly(methyl methacrylate)-co-poly(zinc methacrylate acetate) (PMMA-co-PZnMAAc) copolymer was synthesized via free-radical polymerization between methyl methacrylate (MMA) and zinc methacrylate acetate (ZnMAAc), where asymmetric ZnMAAc with only one terminal double bond (C=C) was applied to act as the precursor for ZnO nanocrystals and could avoid cross-link. Subsequently, transparent ZnO/PMMA nanocomposite films were obtained by in-situ thermal decomposition. Scanning electron microscope (SEM) image revealed that ZnO nanocrystals were homogeneously dispersed in PMMA matrix. With thermal decomposition time increasing, the absorption intensity in UV region and photoluminescence intensity of ZnO/PMMA nanocomposite films enhanced. However, the optical properties diminished when the thermal decomposition temperature increased. The TGA measurement displayed ZnO/PMMA nanocomposite films prepared by the in-situ synthesis method possessed better thermal stability compared with those prepared by the physical blending method and pristine PMMA films.     

ZnO nanoparticles dispersed PVA–PVP blend matrix based high performance flexible nanodielectrics for multifunctional microelectronic devices

Polymer nanocomposite (PNC) films based on the blend matrix of poly(vinyl alcohol) (PVA) and poly(vinyl pyrrolidone) (PVP) (50/50 wt%) incorporated with zinc oxide (ZnO) nanoparticles (i.e., (PVA–PVP)–x wt% ZnO; x = 0, 1, 3 and 5) were prepared by solution-cast method. The behaviour of polymer-polymer and polymer-nanoparticle interactions in the PNC films was ascertained by employing X-ray diffraction, energy dispersive X-ray, and Fourier transform infra-red spectroscopies. Scanning electron microscopy and atomic force microscopy were performed for the morphological characterization, whereas the thermal and optical properties of the PNC films were investigated by using differential scanning calorimetry and ultraviolet–visible spectroscopy, respectively. The dielectric and electrical behaviour of these PNC materials were determined by employing the dielectric relaxation spectroscopy over the frequency range from 20 Hz to 1 MHz. The influence of ZnO concentration on the degree of PVA crystalline phase and the crystallite size, surface morphology and roughness of the films, the glass phase transition and melting phase transition temperatures, direct and indirect optical energy band gap, refractive index, complex permittivity, electrical conductivity, activation energy and the structural dynamics of these PNC materials were explored. The investigated properties of the PNC films were credited to an innovation and engineering of novel high performance flexible nanodielectrics in the area of advanced functional materials for their promising applications especially in the next generation optoelectronic, gas sensor and microelectronic devices.     

Effect of irradiating ion fluence on optical properties of ZnO1−x:Nx thin films

Swift heavy ion (SHI) irradiation is an effective technique to modify the optical properties of the materials. In the present investigation, the effect of 100?MeV?Ag⁷⁺ SHI irradiation fluence on the optical properties of ZnO_1?x:N_x thin films was studied. The post irradiation spectroscopic characterizations such as UV–VIS reflectance spectroscopy, Raman spectroscopy and photoluminescence (PL) spectroscopy analysis were carried out. The studies imply that when the SHI passes through the solid, the higher electronic stopping power of ions can weaken oxygen bonds in ZnO, resulting in the formation of donor defects such as oxygen vacancies and zinc interstitials. The formation of donor defects has been acknowledged through the increase in bandgap with irradiating ion fluence. The blue shift observed from the Raman spectra for the 3?×?10¹³ ions/cm² fluence-irradiated films implies the existence of compressive stress in the films. The PL analysis acknowledges the formation of donor defects upon irradiation. Furthermore, it conveys that the presence of N atoms in ZnO lattice leads to the formation of a less number of defects as compared with undoped ZnO while irradiation.     

Influence of gamma radiation on optical properties of Halloysite nanotubes incorporated polycarbonate nanocomposites

In the current research investigation, polycarbonate/hallyosite nanotubes (PC/HNTs) nanocomposite (NC) films have been successfully fabricated by solution intercalation technique using ultrasound energy in facile way which helps complete exfoliation of the HNTs in the matrix. The effect of Gamma irradiation-induced modifications of PC/HNTs NC have been studied in the dose range 200–500?kGy, irradiated with Co⁶⁰ source. The NC films have been evaluated by UV–visible spectroscopy, Fourier Transform Infrared spectroscopy, X-ray diffraction and scanning electron microscopic techniques in order to probe the effect of gamma radiation on the structural behaviors. The obtained results have been indicated that as the Gamma irradiation dosage increases from 200 to 500?kGy, phenolic group forms through scissoring of ester link of PC, which may cause PC to degrade and lose their property. At lower dosage (200?kGy), the effect is less and at higher dosage (500?kGy), the effect is significant and at 300 and 400?kGy, the effect is moderate and NC films retained their properties. The irradiation effect is most significant and effective at the higher dosage range. UV–visible spectroscopy shows a noticeable reduction in the energy band gap due to gamma irradiation.     

Direct current magnetron sputter-deposited ZnO thin films

Zinc oxide (ZnO) is a very promising electronic material for emerging transparent large-area electronic applications including thin-film sensors, transistors and solar cells. We fabricated ZnO thin films by employing direct current (DC) magnetron sputtering deposition technique. ZnO films with different thicknesses ranging from 150 nm to 750 nm were deposited on glass substrates. The deposition pressure and the substrate temperature were varied from 12 mTorr to 25 mTorr, and from room temperature to 450 °C, respectively. The influence of the film thickness, deposition pressure and the substrate temperature on structural and optical properties of the ZnO films was investigated using atomic force microscopy (AFM) and ultraviolet-visible (UV-Vis) spectrometer. The experimental results reveal that the film thickness, deposition pressure and the substrate temperature play significant role in the structural formation and the optical properties of the deposited ZnO thin films.     

Properties of ZnO thin films grown on Si substrates by photo-assisted MOCVD

ZnO thin films were grown on (1 0 0) p-Si substrates by Photo-assisted Metal Organic Chemical Vapor Deposition (PA-MOCVD) using diethylzinc (DEZn) and O₂ as source materials and tungsten-halogen lamp as a light source. The effects of tungsten-halogen lamp irradiation on the surface morphology, structural and optical properties of the deposited ZnO films have been investigated by means of atomic force microscope (AFM), X-ray diffraction and photoluminescence (PL) spectra measurements. Compared with the samples without irradiation, the several characteristics of ZnO films with irradiation are improved, including an improvement in the crystallinity of c-axis orientation, an increase in the grain size and an improvement in optical quality of ZnO films. These results indicated that light irradiation played an important role in the growth of ZnO films by PA-MOCVD.     

Preparation and characterization of ZnO thin films prepared by thermal oxidation of evaporated Zn thin films

In this paper, the experimental results regarding some structural, electrical and optical properties of ZnO thin films prepared by thermal oxidation of metallic Zn thin films are presented.Zn thin films (d=200–400 nm) were deposited by thermal evaporation under vacuum, onto unheated glass substrates, using the quasi-closed volume technique. In order to obtain ZnO films, zinc-coated glass substrates were isochronally heated in air in the 300–660 K temperature range, for thermal oxidation.X-ray diffraction (XRD) studies revealed that the ZnO films obtained present a randomly oriented hexagonal nanocrystalline structure. Depending on the heating temperature of the Zn films, the optical transmittance of the ZnO films in the visible wavelength range varied from 85% to 95%. The optical band gap of the ZnO films was found to be about 3.2 eV. By in situ studying of the temperature dependence of the electrical conductivity during the oxidation process, the value of about 2×10⁻² Ω⁻¹ m⁻¹ was found for the conductivity of completely oxidized ZnO films.     

Metal adsorption of gamma-irradiated carboxymethyl cellulose/polyethylene oxide blend films

Blend films of different ratios of carboxymethyl cellulose (CMC)/polyethylene oxide (PEO) were prepared by the solution casting method. To investigate the effect of irradiation on all properties of prepared blend, it was exposed to different gamma irradiation doses (10, 20, and 30?kGy). Physical properties such as gel fraction (GF) (%) and swelling (SW) (%) were investigated. It was found that the GF (%) increases with increasing irradiation dose up to 20?kGy, while SW (%) decreases with an increase in the irradiation doses for all blend compositions. Moreover, the structural and mechanical properties of the prepared films were studied. The results of the mechanical properties obtained showed that there is an improvement in these properties with an increase in both CMC and irradiation dose up to 20?kGy. The efficiency of metal ions uptake was measured using a UV spectrophotometer. The prepared films showed good tendency to absorb and release metal ions from aqueous media. Thus, the CMC/PEO film can be used in agricultural domain.     

Excellent UV absorption in spin-coated thin films of oleic acid modified zinc oxide nanorods embedded in Polyvinyl alcohol

The aim of the study is to investigate the optical properties of spin-coated, highly transparent nanocomposite films of oleic acid modified ZnO (Zinc oxide) nanorods embedded in Polyvinyl alcohol (PVA) matrix. Pristine and oleic acid (OA) modified ZnO nanorods have been prepared by wet chemical synthesis and are characterized by X-ray diffraction, FESEM, TEM and FT–IR spectroscopy techniques. The optical properties of ZnO/PVA films are studied using UV–visible absorption and Photoluminescence (PL) spectroscopy. The results show that the optical absorption of the films in the UV region is quite high and more than 95% absorption is observed in films prepared from OA modified ZnO nanorods. The excellent UV absorption at around 300 nm offers prospects of applications of these films as efficient UV filters in this wavelength region. The PL spectrum of pristine ZnO nanorods shows almost white light emission whereas OA modified ZnO nanorods have a more intense peak centered in the blue region. The PL emission of OA modified ZnO/PVA film shows appreciable increase in intensity compared to the film obtained with pristine ZnO. The surface modification of ZnO by the polymer matrix removes defect states within ZnO and facilitates sharp near band edge PL emission at 364 nm.     

Deposition and characterization of transparent and conductive sprayed ZnO:B thin films

Highly transparent and conductive Boron doped zinc oxide (ZnO:B) thin films were deposited using chemical spray pyrolysis (CSP) technique on glass substrate. The effect of variation of boron doping concentration in reducing solution on film properties was investigated. Low angle X-ray analysis showed that the films were polycrystalline fitting well with a hexagonal wurtzite structure and have preferred orientation in [002] direction. The films with resistivity 2.54×10⁻³ Ω-cm and optical transmittance >90% were obtained at optimized boron doping concentration. The optical band gap of ZnO:B films was found ∼3.27 eV from the optical transmittance spectra for the as-deposited films. Due to their excellent optical and electrical properties, ZnO:B films are promising contender for their potential use as transparent window layer and electrodes in solar cells.     

Effect of implantation regimes of silver ions on the structure and optical properties of zinc-oxide nanocrystalline films

Thin (about 270 nm) nanocrystalline films of zinc oxide (ZnO) are obtained on quartz substrates using ion sputtering and irradiated with Ag⁺ ions at an energy of 30 keV and relatively high fluences at ion current densities of 4, 8, and 12 µA/cm². The X-ray analysis, scanning electron microscopy, and optical spectroscopy are used to study the effect of irradiation dose and ion current density on the structural modification and optical properties of the ZnO films. Nontrivial dependences of the structural and optical parameters of the films on the ion irradiation regimes are due to radiation heating and film sputtering under the action of the ion beam, diffusion of impurity, formation of silver nanoparticles in the irradiated layer at high implantation fluences, and the diffusion of implanted impurity at relatively high ion current densities.     

Effect of substrate and annealing on the structural and optical properties of ZnO:Al films

ZnO:Al thin films with c-axis preferred orientation were deposited on glass and Si substrates using RF magnetron sputtering technique. The effect of substrate on the structural and optical properties of ZnO:Al films were investigated. The results showed a strong blue peak from glass-substrate ZnO:Al film whose intensity became weak when deposited on Si substrate. However, the full width at half maxima (FWHM) of the Si-substrate ZnO:Al (0 0 2) peaks decreased evidently and the grain size increased. Finally, we discussed the influence of annealing temperature on the structural and optical properties of Si-substrate ZnO:Al films. After annealing, the crystal quality of Si-substrate ZnO:Al thin films was markedly improved and the intensity of blue peak (∼445 nm) increased noticeably. This observation may indicate that the visible emission properties of the ZnO:Al films are dependent more on the film crystallinity than on the film stoichiometry.     

磁控溅射法制备钴掺杂氧化锌薄膜室温磁学性质

钴掺杂氧化锌是室温稀磁半导体的重要候选材料,其磁学特性和钴掺杂浓度、显微结构及光学性质密切相关。磁控溅射具有成本低、易于大面积沉积高质量薄膜等特点,是广受关注的稀磁半导体薄膜制备方法。利用磁控溅射方法制备了不同浓度的钴掺杂氧化锌薄膜,并对其显微结构、光学性质和磁学特性进行了系统分析。结果表明：当掺杂原子分数在8%以内时,钴掺杂氧化锌薄膜保持单一的铅锌矿晶体结构,钴元素完全溶解在氧化锌晶格之中;薄膜在可见光区域有很高的透射率,但在567, 615和659 nm处有明显吸收峰,这些吸收峰源于Co2+处于O2-形成的四面体晶体场中的特征d-d跃迁。磁学特性测试结果表明钴掺杂氧化锌薄膜具有室温铁磁性,且钴的掺杂浓度对薄膜的磁学特性有重要影响。结合薄膜结构、光学和电学性质分析,实验中观察到的室温铁磁性应源于钴掺杂氧化锌薄膜的本征属性,其铁磁耦合机理可由束缚磁极化子模型进行解释。     

Effect of gamma-irradiation on the structural,optical and electrical properties of PEO/starch blend containing different concentrations of gold nanoparticles

ABSTRACT

Blend of polyethylene oxide (PEO)/starch (70/30 wt.%) filled with different amounts of gold nanoparticles (AuNPs) were prepared using the casting technique. X-ray diffraction (XRD) and Fourier-transform infrared (FTIR) techniques were used to investigate the structure of polymeric samples before and after exposing to gamma irradiation at different times. XRD showed a gradual decrease in intensity of crystalline peaks with increasing the gamma dose denotes a decrease in the amount of crystalline phase in the films, while the FTIR measurement shows induced changes in chemical structure assigned to the AuNPs amount and irradiation times. The optical energy gap values (E_g) for unirradiated and irradiated samples were calculated and interpreted. The differential scanning calorimetry (DSC) which showed the miscibility between the two components of the blend. The electrical conductivity (σ) measurement was showed increased in electrical conductivity after exposure to the gamma dose. The gold nanoparticles were used as nano?ller to improve the structural and electrical properties of polymeric samples. The results showed the Gamma irradiation significantly effect on the structural and electrical properties of PEO/starch blend.     

Effect of gamma irradiation on the structural and optical properties of PVA/CdS nanocomposite films prepared by ex-situ technique

ABSTRACT

For a comprehensive understanding of the PVA/CdS nanocomposite properties, it is essential to select the suitable method for their preparation as well as elucidate the interfacial interactions, which still need support. CdS nanoparticles have been prepared by thermolysis method under the flow of nitrogen. Rietveld refinement of x-ray data shows that all the CdS samples have both cubic and hexagonal structures. Then PVA/CdS films were prepared by ex-situ technique. Samples from PVA/CdS nanocomposite have been irradiated with gamma doses in the range 10–120?kGy. The implanting of CdS NPs into PVA matrix was confirmed by XRD hand in hand with UV–vis and FTIR spectroscopic techniques. UV/VIS absorption spectra confirm the formation of hybridized film CdS/PVA nanocomposite with a refractive index in the range of 1.32–1.48 (at 500?nm). UV/VIS measurements were also used in calculating different optical parameters such as refractive index, extinction coefficient and optical band gap energy. Additionally, Tauc’s relation was used to determine the type of electronic transition. It is found that the gamma irradiation in the dose range 30-90?kGy led to a more compact structure of PVA/CdS nanocomposite and causes proper dispersion of CdS nanoparticles in the PVA matrix. This led to the formation of coordination reaction between OH of PVA and CdS nanoparticles, resulted in an increase in refractive index and the amorphous phase. Also, the gamma irradiation reduces the optical energy gap from 4.53 to 2.19?eV, and accompanied with an increase in the Urbach energy from 2.28 to 4.46?eV, at that dose range which could be attributed to the increase in structural disorder of the irradiated PVA/CdS nanocomposites due to crosslinking. Further, the color intensity ΔE, which is the color difference between the non-irradiated sample and the irradiated ones, was increased, from 0 to 10.8, with increasing the gamma dose, convoyed by an increase in the red and yellow color components.