掺杂稀土离子晶体中的电磁感应光透明现象

对在掺杂稀土离子晶体中实现电磁感应光透明进行了实验研究。首先,以Er3＋∶YAG晶体为样品,用旋转波近似下的密度矩阵方程理论计算了探测场的吸收特性随Er3＋离子浓度的变化规律,结果表明：在探测场失谐Δp=0时,形成了一个对于探测光透明的窗口,从而在理论上论证了在掺杂稀土离子晶体中实现电磁感应光透明效应的可行性。设计了一个以Pr3＋∶Y2SiO5晶体为样品的实验激发方案,吸收光谱显示,当温度为6 K时其在共振吸收峰处可形成一个完全透明的窗口,实现了在掺杂离子晶体中的电磁感应光透明。实验还分析了工作温度、耦合场失谐对探测光透过率的影响,结果显示：当样品温度上升到15 K时,透明窗口消失;耦合场的失谐量越大,透射率越小。     

Photon induced far-infrared absorption in pure single crystal silicon

Illumination of silicon by direct sunlight was found to cause a significant increase in the far-infrared (FIR) absorption of silicon. The effect was observed during a recent measurement campaign using a 2.5 THz airborne heterodyne spectrometer for atmospheric measurements together with a silicon aircraft window. In this work, the absorption increase was reproduced in the laboratory by illumination of a silicon sample with a halogen lamp. The analysis of the energy flux dependence and the wavenumber dependence support the assumption that the increased absorption in the FIR is due to photon induced transitions of electrons from the valence band to the conduction band. This effect might be of importance to a number of instruments using silicon components.     

A light induced configurational change of FA centres in Li doped KCl-KBr crystals

Abstract

Spectroscopic properties of F_A centres in Li doped KCl-KBr mixed crystals were studied. At low temperature light induced spectral shifts, for the F_A1 hand towards lower energy and for the F_A2 band towards higher energy, were observed. The shifts are proposed to be due to a configurational change where the electron occupied vacancy finds a new location in relation to the neighbouring chlorine and bromine ions. The recovery to the original configuration, obtained in the F → F_A conversion, is a temperature activated process.     

Optical properties of pure and doped Y3Fe5O12 single crystals

Institute of Physics of Solids and Semiconductors, Academy of Sciences of Belarus, 17, P. Brovka Str., GSP, Minsk, 220072. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 63, No. 4, pp. 667–675, July–August, 1996.     

Study of color centers produced in thulium doped YLF crystals irradiated by electron beam and femtosecond laser pulses

In this work, we report the influence of the presence of photochromic and color centers in the photobleaching of thulium ions blue emission in YLF (YLiF₄) crystals doped with 1 mol% Tm (3+). The samples were irradiated at room temperature both with electron beam and high intensity ultrashort pulses from a Ti:Sapphire CPA laser system. In both irradiations the production of photochromic and color centers was observed via the absorption bands in the UV and visible ranges. Pure LiF and pure and oxygen doped YLF crystals were used to identify the color centers produced and their optical properties. From a phenomenological model it was possible to study the interaction between color centers and thulium ions, and their effect in photobleaching and photodarkening behaviors. Finally, the blue up laser level population was computed using a rate equation analysis.     

Spectral,Optical and Mechanical studies on pure and thiourea doped ammonium di-hydrogen phosphate NLO single crystals

Pure and thiourea substituted single crystals of ammonium di-hydrogen phosphate have been grown from aqueous solution by isothermal solvent evaporation technique. Doped crystal exhibits prominent changes in physical and chemical properties. Single crystal XRD analyses of the samples are carried out and the results are compared. FTIR and UV–vis–NIR spectral analyses have been employed to identify the presence of various functional groups and the UV cut-off range in the grown crystals. Density measurements have been made and Photoconductivity studies revealed the negative photo conducting nature. Hardness measurement shows that the mechanical strength of the doped crystal is high when compared to pure ammonium di-hydrogen phosphate. The dielectric response of the samples has been studied in the frequency range 100 Hz–5 MHz at room temperature and the results are discussed.     

Optical and EPR study of BaY2F8 single crystals doped with Yb

Optical and electron paramagnetic resonance study have been carried out on BaY₂F₈ single crystals doped with Yb ions at 0.5 and 10 mol%. The crystals have been obtained using the Czochralski method modified for fluoride crystal growth. Optical transmission measurements in the range of 190-3200 nm and photoluminescence measurements were carried out at room temperature. Absorption spectra of BaY₂F₈ single crystals doped with Yb due to the ²F_7/2→²F_5/2 transitions have been observed in the 930-980 nm range. To analyze the possible presence of Yb²⁺ ions in the investigated crystals, irradiation with γ-quanta with a dose of 10⁵ Gy have been performed. The observed photoluminescence bands show usual emission in IR and other one in VIS, being an effect of cooperative emission of Yb³⁺ ions and energy up-conversion transitions of photons from IR to UV-vis(visible) due to hoping process between energy levels of paired Yb³⁺ and Er³⁺, where Er³⁺ ions are unintentional dopants. The EPR spectra of BaY₂F₈:Yb 10 mol% consist of many overlapping lines. They have been analyzed in terms of spin monomers, pairs, and clusters. The angular dependence of the resonance lines positions have been studied also to find the location of coupled ytterbium ions in the crystal structure.     

Ab initio calculations of electronic structures of SrMoO4 crystals containing F and F color centers

The electronic structures of SrMoO₄ crystals containing F and F⁺ color centers with the lattice structure optimized are studied within the framework of the fully relativistic self-consistent Dirac–Slater theory, using a numerically discrete variational (DV-Xα) method. From the calculation, it is concluded that F and F⁺ color centers have donor energy level in the forbidden band. The electronic transition energies from the donor level to the bottom of the conduction band are 1.855 eV and 2.161 eV, respectively, which correspond to the 670 nm and 575 nm absorption bands. It is predicted that the 670 nm and 575 nm absorption bands originate from the F and F⁺ centers in SrMoO₄ crystals.     

Luminescence study of pure and Fe- or Mo-doped ZnWO4 crystals

ZnWO₄, ZnWO₄:Fe and ZnWO₄:Mo crystals were investigated by the methods of time-resolved spectroscopy in the temperature range of 4.2–300 K. It is shown that the Mo and Fe impurities significantly reduce the light yield of ZnWO₄. The main 2.5 eV emission of ZnWO₄ and the 1.77 eV emission band of ZnWO₄:Mo are shown to originate from the triplet excited state of the WO₆ and MoO₆ complex, respectively. In ZnWO₄:Fe,Mo the MoO₆ emission band is shifted to lower energies due to the perturbing influence of the iron impurity. No perturbing effect of Fe or Mo ions was observed for the main emission of ZnWO₄:Fe and ZnWO₄:Mo. The creation spectrum of self-trapped holes was measured for ZnWO₄, ZnWO₄:Fe and ZnWO₄:Mo crystals in the energy region of 4–30 eV.     

Ionic conductivity and point defects in pure and doped MnF2 and MgF2 single crystals

Conductivity, σ, of MnF₂ and MgF₂ single crystals, pure and doped (with Li⁺, Na⁺, Y³⁺, Gd³⁺), has been measured, from room temperature to 500°C. Further, some crystals were contaminated with O^2? as an additional impurity. These tetragonal (rutile structure) crystals both behave like typical ionic conductors. Of particular interest is the existence of a large anisotropy, σ being largest when measured parallel to the c-axis. Study of the conductivity isotherms and anisotropy as functions of impurity concentration allows identification of the conduction mechanism in terms of the migration of two mobile defects: the fiuorine-ion vacancy, V_F, and interstitial, F_i. A value of 1.44 eV was obtained for the enthalpy of formation of the intrinsic anion Frenkel defect, 0.80 eV for the migration enthalpy of a V_F and 0.88 eV for an F₁ in MnF₂ parallel to the c-axis. Similar values were obtained for MgF₂. This work shows that more information about point defects can be obtained from conductivity measurements in non-cubic cyrstals than in cubic ionic crystals, because of the additional information from conductivity anisotropy.     

Growth and characterization of a pure and doped nonlinear optical l-histidine acetate single crystals

Single crystals of pure, Cu²⁺and Mg²⁺ doped l-histidine acetate (LHA) were grown successfully by slow evaporation technique. The X-ray diffraction (XRD) studies were carried out for the pure and doped grown crystals. Absorption of these grown crystals was analyzed using UV-vis-NIR studies, and it was found that these crystals possess minimum absorption from 200 nm to 1500 nm. The pure and doped crystals are characterized by Fourier transform Raman (FT-Raman), thermal and photoconductivity studies. Vickers microhardness tests were carried out for the pure and doped crystals and the mechanical strengths were found. The dielectric constant and the dielectric loss with frequency were also studied.     

Growth of 4-(dimethylamino) benzaldehyde doped triglycine sulphate single crystals and its characterization

Single crystals of triglycine sulphate (TGS) doped with 1 mol% of 4-(dimethylamino) benzaldehyde (DB) have been grown from aqueous solution at ambient temperature by slow evaporation technique. The effect of dopant on the crystal growth and dielectric, pyroelectric and mechanical properties of TGS crystal have been investigated. X-ray powder diffraction pattern for pure and doped TGS was collected to determine the lattice parameters. FTIR spectra were employed to confirm the presence of 4-(dimethylamino) benzaldehyde in TGS crystal, qualitatively. The dielectric permittivity has been studied as a function of temperature by cooling the sample at a rate of 1 °C/min. An increase in the Curie temperature T_c=51 °C (for pure TGS, T_c=48.5 °C) and decrease in maximum permittivity has been observed for doped TGS when compared to pure TGS crystal. Pyroelectric studies on doped TGS were carried out to determine pyroelectric coefficient. The Vickers's hardness of the doped TGS crystals along (0 1 0) face is higher than that of pure TGS crystal for the same face. Domain patterns on b-cut plates were observed using scanning electron microscope. The low dielectric constant, higher pyroelectric coefficient and higher value of hardness suggest that doped TGS crystals could be a potential material for IR detectors.     

X-ray analysis of mechanical and thermal effects induced by femtosecond laser treatment of aluminum single crystals

Surface marking of aluminum single crystal is performed with femtosecond laser pulses. X-ray analysis allows to measure thermal and mechanical effects induced by the femtosecond laser pulses. These effects are estimated by comparing the pole figures (crystallinity) and the broadening of the diffraction peaks (mechanical contribution) before and after the laser irradiation. The results show that the femtosecond laser treatment ensures a re-crystallization of the structure and the presence of mechanical residual stresses. The analysis of the pole figures provides the sign of a re-crystallization on smaller volumes compared to initial ones. After the laser irradiation, the crystallization is perfectly oriented like the (1 1 0) orientation of the massive sample. Moreover, following the laser treatment, we show that the crystallographic structure is purer than the initial one. We also prove that the laser effect is persistent on a typical scale of 10 μm beyond the surface.     

Luminescence study of self-trapped holes in pure and Fe- or Mo-doped ZnWO4 crystals

Thermostimulated and photostimulated luminescence of ZnWO₄, ZnWO₄:Fe and ZnWO₄:Mo crystals irradiated at low temperatures by X-rays or UV photons was studied in the temperature range 4.2–300 K in order to clarify the creation and recombination processes of the elementary colour centres. The connection of the luminescence phenomena with the self-trapped holes has been revealed.     

X-ray and thermoluminescence of LiKB4O7 single crystals

The thermoluminescent (TL) and X-ray luminescent (XL) spectra of undoped LiKB₄O₇ (LKBO) single crystals had been investigated in the temperature range 80-300 K. It was found that in LKBO crystals, there are two intensive TL peaks at 112 and 132 K. The only one band emission spectra of sharply defined Gaussian shape, confirming the same mechanism of XL and TL by the radiation annihilation of the strongly localized self-trapped excitons (STE), had been observed in the TL and XL spectra. The possible models of these localization centers STE have been discussed.     

Growth, optical, mechanical and dielectric studies on NLO active pure and metal ion doped single crystals of bis-thiourea zinc chloride

Good quality single crystals of pure and metal ion (Ni²⁺) doped bis-thiourea zinc chloride (BTZC) possessing excellent nonlinear optical properties have been grown from aqueous solution by the slow solvent evaporation technique. The lattice parameters of the grown crystals are determined by single crystal X-ray analysis. The well defined sharp peaks in the powder X-ray diffraction pattern reveals the crystalline perfection and the EDAX spectrum confirms the presence of dopant in the lattice of the parent crystal. The DRS UV-visible spectral study reveals improved transparency for the doped crystal, ascertaining the inclusion of metal ion in the lattice. The optical band gap of the pure and doped crystals was calculated to be 4.8 and 5.2 eV respectively from the UV transmission spectrum. The vickers hardness test brings forth higher hardness value for Ni²⁺doped BTZC as compared to pure BTZC crystal. The dielectric measurement exhibits very low dielectric constant and dielectric loss at higher frequencies for both the pure and Ni²⁺doped BTZC. The existence of second harmonic generation signals in the crystal also has been confirmed by performing the Kurtz powder test.     

Optical and gain properties of series of crystals LiF-YF3-LuF3 doped with Ce and Yb ions

Here, we present first results of systematic studies of host cation variation impact on spectral-kinetic, photochemical and gain properties of Ce³⁺-doped LiYF₄ (YLF), LiLuF₄ (LLF) and LiY_1−xLu_xF₄ family crystals. 5d-4f luminescence decay of Ce³⁺ ions studies, together with pump-probe experiments, indicate that previously reported twice higher luminescence quantum yield in LLF compared with that of YLF crystals is provided by more efficient upper lasing level feeding due to recombination and higher color center destruction rate in LLF against YLF crystals. Namely, it is responsible for higher energetic characteristics of laser based on Ce³⁺:LLF crystals. Strong and wide pump-induced absorption band centered at 310 nm is observed in Ce³⁺:YLF. This band is shifted to blue and its intensity goes down with Lu content. We have evaluated free charges recombination rate, excited state absorption cross-section for Ce³⁺ ions and some other photodynamic processes related microparameters. Fitting results indicate that pump-induced color centers lifetime decreases with Lu-content in LiYF₄-LiLuF₄ mixture and it can be associated with more efficient color center bleaching by Ce³⁺ ions 5d-4f fluorescence.     

EPR characterization of Mn impurity ions in PbWO4 single crystals

The electron paramagnetic resonance (EPR) properties of the Mn²⁺ ions in PbWO₄ single crystals grown by the Czochralski method have been investigated in the X-band microwave frequency, at T=20 K. The angular dependence of the EPR line positions obtained by rotating the magnetic field in the main crystallographic planes shows that the local symmetry at the Mn²⁺ impurity ions is tetragonal, strongly suggesting that the Mn²⁺ ions substitute for the Pb²⁺ lattice cations, without charge compensation. The resulting spin Hamiltonian parameters compare well with the corresponding values for the Mn²⁺ ions in other isomorphous tungstates. The observed strong angular variation of the EPR linewidth has been quantitatively described considering a random distribution of lattice strains.