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1.
Abstract Ne, Ar, Sb, and Xe ions have been implanted, at 30 keV or 80 keV and at various incidence angles, into Si substrates maintained at room temperature during implantation. Implantation-induced Si disorder was measured using RBS-channelling. The effects upon disorder of various incidence angles were studied over a fluence range of 1012-1016 ions·cm?2. The results show that, at low fluences the lighter (Ne) and slightly heavier (Ar) ion implantations generate a bimodal disorder-depth profile, whilst at higher fluences measurements of amorphised layer thickness as a function of ion incidence angle allow values of the standard deviation of the disorder profile parallel and transverse to the ion beam direction for each ion to be obtained with good agreement to theoretical predictions. 相似文献
2.
M. Matsuoka J. F. D. Chubaci J. P. Biersack S. Watanabe N. Kuratani K. Ogata 《辐射效应与固体损伤》2013,168(1-4)
Abstract Thin Ni films were prepared at room temperature by Ni metal vapour deposition and simultaneous irradiation by Ar ions with an energy of 2–20 keV. The reaction of Ni with Si during dynamic ion-beam mixing was studied. The fluences of the ion beam were 4.7 × 1017 and 8.9 × 1017 cm?2, and arrival rate ratios Ni/Ar were 9.7 and 5.1. Concentration profiles of Ni, Si, C, and O were analysed with Auger electron spectroscopy; the surface morphology and the crystalline structure were investigated with a cross-sectional scanning electron microscope and X-ray diffractometry. The theoretical profiles were calculated with the dynamic Monte Carlo simulation T-DYN for comparison with the experimentally obtained profiles. It was possible to observe the ballistic mixing effects and also thermally activated formation of nickel silicide. 相似文献
3.
Abstract Measurements of both secondary electron emission coefficient γ and SiL23 Auger yield ρA obtained from (111) Si target bombarded by high fluence of noble gas ions were performed. For Si irradiated at room temperature at doses more than 1017 ions per cm2, monotonous increasing variation of γ and ρA versus incidence angle i was observed. For Si irradiated at a temperature more than a critical value, γ(i) and ρA(i) curves exhibited, superimposed to monotonous variation, some minima when the ion beam penetrates the crystal along low index directions. In the range 20–650°C, the Auger yield temperature dependence showed a sharp variation around a critical value depending on the ion mass for a given incident energy. These results are linked to an amorphous-crystalline phase transition. 相似文献
4.
Abstract Lattice disorder induced by ion bombardment of SiC surfaces has been studied using Raman spectroscopy. After bombardment with 15 keV H+, D+ or He+ to fluences of 1019 cm?2 the SiC surface was found to amorphize as indicated by changes in the Raman spectra. Raman studies of the annealing behavior of the damaged surface showed that no recrystallization of the amorphous layer occurred after 12 hours at 1000°C. By using different wavelengths of the exciting radiation the spatial distribution of the ion induced damage was investigated. Evidence for the preferential sputtering of Si resulting in a carbon rich surface layer is discussed. Based on work performed under the auspices of the US Energy Research and Development Administration. By acceptance of this article, the publisher and/or recipient acknowledges the US Government's right to retain a nonexclusive, royalty-free license in and to any copyright covering this paper. 相似文献
5.
In the study of ion implantation, electrically active ions or noble gas ions are often used for damage study, range profiling, etc. Very seldom are both electrically active ions and noble gas ions implanted at about the same depth. In the work reported here, argon and arsenic ion implants and their interference in diffusion were studied by using backscattering, electrical measurements, and transmission electron microscopy (TEM). Several unexpected phenomena were observed. First, when both Ar and As are implanted in high doses (about 1016/cm2), at depths around a few hundred nanometers, the Ar significantly hampers the As diffusion, and the As prevents the outdiffusion of the Ar. The interference occurs regardless of which ion is implanted first. Second, when Si wafers uniformly doped with about 4 × 1019 As/cm3 are ion-implanted with log16 Ar/cm2 at 130 keV, the As atoms stay uniformly distributed. When the sample is annealed at a temperature between 900 and 1100°C in a nitrogen ambient, however, double peaks for both Ar and As are observed by backscattering. The nonuniform distribution of As after the heat treatment of the uniformly distributed As is puzzling. Finally, the As profile for an As capsule diffused on a silicon wafer is greatly altered when the wafer has been pre-implanted with Ar. Arsenic atoms tend to build up at the same depth as the Ar atoms. Several other observations concerning Ar and As are equally puzzling. This paper discusses the observations and some plausible explanations. 相似文献
6.
R. Gupta K. P. Lieb Y. Luo G. A. Müller P. Schaaf K. Zhang 《The European Physical Journal B - Condensed Matter and Complex Systems》2008,63(4):501-506
The effects of 75-keV Ar and 100-keV Kr ion irradiations of 72-nm thin DC-sputtered permalloy (Ni81Fe19) films on Si(100) wafers were studied at fluences of up to 1016 ions/cm2. The changes of the structural and magnetic properties were measured via X-ray diffraction, Rutherford backscattering spectroscopy,
and magneto-optical Kerr effect. The irradiations increase the lattice constant and improve the crystallinity of the samples.
They induce also strong changes of the magnetic polarisation and the coercive field for increasing ion fluence. The hysteresis
loops suggest that, with increasing ion fluence, the reversal of the magnetisation changes gradually from rotation-dominated
in the as-deposited films to domain-wall-motion dominated at the highest ion fluences. The results are compared with those
obtained for Ni-, Cr-and Xe-ion irradiated permalloy films. 相似文献
7.
《Physica B: Condensed Matter》2005,355(1-4):222-230
CdS thin films have been deposited from aqueous solution by photochemical reactions. The solution contains Cd(CH3COO)2 and Na2S2O3, and pH is controlled in an acidic region by adding H2SO4. The solution is illuminated with light from a high-pressure mercury-arc lamp. CdS thin films are formed on a glass substrate by the heterogeneous nucleation and the deposited thin films have been subjected to high-energy Si ion irradiations. Si ion irradiation has been performed with an energy of 80 MeV at fluences of 1×1011, 1×1012, 1×1013 and 1×1014 ions/cm2 using tandem pelletron accelerator. The irradiation-induced changes in CdS thin films are studied using XRD, Raman spectroscopy and photoluminescence. Broadening of the PL emission peak were observed with increasing irradiation fluence, which could be attributed to the band tailing effect of the Si ion irradiation. The lattice disorder takes place at high Si ion fluences. 相似文献
8.
ABSTRACT Thermally grown SiO2 thin films on a silicon substrate implanted with 100?keV silicon negative ions with fluences varying from 1?×?1015 to 2?×?1017 ions cm?2 have been investigated using Electron spin resonance, Fourier transforms infrared and Photoluminescence techniques. ESR studies revealed the presence of non-bridging oxygen hole centers, E′-centers and Pb-centers at g-values 2.0087, 2.0052 and 2.0010, respectively. These vacancy defects were found to increase with respect to ion fluence. FTIR spectra showed rocking vibration mode, stretching mode, bending vibration mode, and asymmetrical stretching absorption bands at 460, 614, 800 and 1080?cm?1, respectively. The concentrations of Si–O and Si–Si bonds estimated from the absorption spectra were found to vary between 11.95?×?1021 cm?3 and 5.20?×?1021 cm?3 and between 5.90?×?1021 cm?3 and 3.90?×?1021 cm?3, respectively with an increase in the ion fluence. PL studies revealed the presence of vacancies related to non-bridging oxygen hole centers, which caused the light emission at a wavelength of 720?nm. 相似文献
9.
Abstract We have used the standard channeling technique with a 1.0 MeV He+ analyzing beam to investigate the lattice disorder produced in GaAs by 60 keV Cd and 70 keV Zn ion implantations made at room temperature. The amount of disorder produced increases linearly with dose and saturates at a dose of approximately 1–2 × 1013 Cd ions/cm2. The disorder present in low dose implants (~5 × 1012 Cd ions/cm2) anneals appreciably by 150 °C. With increasing doses of Cd or Zn the samples show a continuous increase in the anneal temperature required to remove a substantial amount of lattice disorder. There is no apparent difference between the anneal of Zn and Cd implants. The rate at which lattice disorder is produced in GaAs by heavy ion implantations and the doses of heavy ions required to saturate the lattice disorder observed are significantly different from the values of the corresponding quantities for Si and Ge. 相似文献
10.
P. H. Rose 《辐射效应与固体损伤》2013,168(1-4):137-143
Abstract Atomic depth profiles from Be-implanted Si have been examined as a function of implant fluence and annealing, and the results have been correlated with theoretically calculated implantation induced damage profiles. The Be atomic depth profiles were obtained by secondary ion mass spectrometry (SIMS) techniques from samples implanted at 300 keV to fluences ranging from 2 × 1012 to 1015 cm?2. Subsequent to annealing at 600°C for 30 min, the Be SIMS profiles exhibited anomalous redistribution effects. The Be profiles obtained from the annealed samples had the same general features as the depth distribution of implant energy deposited into damage, based on Brice's1 calculations. The correlation of the SIMS atomic profiles and the theoretical damage profiles indicated that Be “decorates” the implantation induced damage regions while redistributing during the annealing process. 相似文献
11.
The mixing of Au in Si induced by secondary and high-order recoil implantation was investigated using 350 keV Ar+ and 350 keV Kr+ ions to fluences from 1?×?1016 to 3?×?1016 ions/cm2 at room temperature. The thickness of the Au layer evaporated on Si substrate was ~2400 Å.The ranges of the Ar and Kr ions were chosen to be lower than the thickness of the Au layer in order to avoid the ballistic mixing produced by the primary knock-on atoms. Rutherford backscattering spectrometry (RBS) experiments were carried out to study the effects induced by Ar and Kr irradiation at the interface of Au–Si system. We observed that in the case of the irradiation with Ar+ ions, a broadening of the Au–Si interface occurred only at the fluence of 3?×?1016 Ar+/cm2 and it is attributed to the surface roughening induced by ion bombardment. In contrast, the RBS analysis of a sample irradiated with 2?×?1016 Kr+/cm2 clearly showed, in addition to the broadening effect, the formation of a mixed zone of Au and Si atoms at the interface. The mixing of Au in Si atoms can be explained by the secondary and high-order recoil implantation followed by subsequent collision cascades. 相似文献
12.
V. A. Ivchenko E. V. Medvedeva V. V. Ovchinnikov 《Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques》2009,3(4):592-597
The effect of formation of a nanocrystalline structure in the near-surface layer of platimun (99.99%) as a result of 30-keV Ar ion bombardment up to fluences of 1016–1017 cm?2 was discovered by the direct method of field ion microscopy. The spatial distribution and structure of radiation damage in Pt was established in the case where Pt is bombarded by fast neutrons (E > 0.1 MeV) up to fluences of 6.7 × 1017 and 3.5 × 1018 cm?2 in the RWW-2M reactor at a temperature of ~310 K. 相似文献
13.
Abstract The lattice disorder produced by 42-keV and 75-keV Hg ions implanted in Silicon at room temperature and the lattice location of the Hg atoms were studied by means of the channeling technique with a 2.0 MeV 4He+ beam. The damage produced was found to increase linearly with ion dose until a saturation value, connected to the ion range, is reached. The number of Si atoms displaced for Hg ion implanted was evaluated and compared with the theoretical expectation. The substitutional Hg fraction is connected to the disorder produced: the replacement mechanism is discussed. 相似文献
14.
J. M. Costantini J. L. Flament V. Mori L. Sinopoli J. Trochon J. L. Uzureau 《辐射效应与固体损伤》2013,168(1-3):83-91
Abstract We have studied the effects of 2.5 MeV electron irradiation and ion (C, N, F, Si and Kr) bombardment on the electrical conductivity of a polyimide (Kapton-H) with ion energies ranging between 320 keV (N) and 1.25 GeV (Kr). In this wide range of situations we have tried to sort out the respective effects of nuclear and electronic excitation energy losses. For all ion irradiation the conductivity is found to scale with the electronic excitation absorbed dose: i.e. a power law of conductivity versus absorbed dose with an exponent around 9 is observed. At a given absorbed dose (in Gray units) the efficiency of each ion to enhance conductivity is found to be proportional to the electronic energy loss; electrons are much less efficient than ions and thus collective excitations are required to achieve this process. The nuclear energy loss can perhaps play some role at conductivities higher than 100 Ω?1 m?1, but its effects are negligible in the range explored here. 相似文献
15.
ABSTRACTIn the present work, effects of silicon negative ion implantation into semi-insulating gallium arsenide (GaAs) samples with fluences varying between 1?×?1015 and 4?×?1017?ions?cm?2 at 100?keV have been described. Atomic force microscopic images obtained from samples implanted with fluence up to 1?×?1017?ion?cm?2 showed the formation of GaAs clusters on the surface of the sample. The shape, size and density of these clusters were found to depend on ion fluence. Whereas sample implanted at higher fluence of 4?×?1017?ions?cm?2 showed bump of arbitrary shapes due to cumulative effect of multiple silicon ion impact with GaAs on the same place. GXRD study revealed formation of silicon crystallites in the gallium arsenide sample after implantation. The silicon crystallite size estimated from the full width at half maxima of silicon (111) XRD peak using Debye-Scherrer formula was found to vary between 1.72 and 1.87?nm with respect to ion fluence. Hall measurement revealed the formation of n-type layer in gallium arsenide samples. The current–voltage measurement of the sample implanted with different fluences exhibited the diode like behavior. 相似文献
16.
Abstract A secondary ion mass spectrometry (SIMS) and a neutral molecule mass spectrometry (NMMS) study of deuterium trapping in a single crystalline silicon as a result of ion irradiation at fluences 1016--1018 cm-2 are presented. An attempt has been made to observe the formation and evolution of defect profiles containing one or two deuterium atoms (SiD- and SiD2-complexes). The proposed model of radiation-induced sequential reactions describes satisfactorily the accumulation of SiD- and SiD2-complexes and the reemission of D2-molecules. 相似文献
17.
G. Schumacher S. Klaumünzer S. Rentzsch G. Vogl 《Zeitschrift für Physik B Condensed Matter》1980,40(1):19-21
Irradiation of the metallic glass Pd80Si20 with high energy Ar-ions at low temperatures resulted in electrical resistance increases of about 5% at a measuring temperature of 10 K after fluences of 3·1015 Ar/cm2 indicating that defects were created by radiation damage. Annealing experiments were performed up to 150°C showing a smooth recovery throughout the whole temperature range. 相似文献
18.
《Current Applied Physics》2003,3(1):61-64
The damage distributions in Si(1 0 0) surface after 1.0 and 0.5 keV Ar+ ion bombardment were studied using MEIS and Molecular dynamic (MD) simulation. The primary Ar+ ion beam direction was varied from surface normal to glancing angle. The MEIS results show that the damage thickness in 1.0 keV Ar ion bombardment is reduced from about 7.7 nm at surface normal incidence to 1.3 nm at the incident angle of 80°. However, the damage thickness in 0.5 keV Ar ion bombardment is reduced from 5.1 nm at surface normal incidence to 0.5 nm at the incident angle of 80°. The maximum atomic concentration of implanted Ar atoms after 1 keV ion bombardment is about 10.5 at% at the depth of 2.5 nm at surface normal incidence and about 2.0 at% at the depth of 1.2 nm at the incident angle of 80°. However, after 0.5 keV ion bombardments, it is 8.0 at% at the depth of 2.0 nm for surface normal incidence and the in-depth Ar distribution cannot be observable at the incident angle of 80°. MD simulation reproduced the damage distribution quantitatively. 相似文献
19.
ABSTRACTZnTe (Zinc Telluride) is a potential semiconducting material for many optoelectronic devices like solar cells and back contact material for CdTe-based solar cells. In the present study, ZnTe thin films were prepared by thermal evaporation technique and then irradiated with 120?MeV Si9+ ions at different fluences. These films are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV–Visible spectroscopy techniques. XRD study confirms increased crystallinity and grain growth for post-irradiated ZnTe thin films for fluences, up to 1?×?1011 ions cm?2. However, the grain size and crystallinity decreased for higher fluence-exposed samples. SEM images confirm the observed structural properties. Modification of the surface morphology of the film due to the ion irradiation with different fluences is studied. Optical band gap of film is decreased from 2.31?eV (pristine) to 2.17?eV after irradiation of Si9+ ions. 相似文献
20.
《Current Applied Physics》2014,14(3):312-317
Ripple patterns on Si (100) surface have been fabricated using 200 keV Ar+ oblique ion beam irradiation. Dynamical evolution of patterns is studied for the fluences ranging from 3 × 1017 ions/cm2 to 3 × 1018 ions/cm2. AFM study reveals that the exponential growth of roughness with stable wavelength of ripples up to higher fluence values is lying in the linear regime of Continuum models. Stylus Profilometer measurement was carried out to emphasize the role of sputtering induced surface etching in ripple formation. Rutherford Backscattering Spectroscopy shows the incorporation of Ar in the near surface region. Observed growth of ripples is discussed in the framework of existing models of surface patterning. Role of ion beam sputtering induced surface etching is emphasized in formation of ripples. In addition, the wetting study is performed to demonstrate the possibility of engineering the hydrophilicity of ripple patterned Si (100) surface. 相似文献