Electrical conductivity and dielectric constant of A-type Nd2O3

The measurements of electrical conductivity (σ) from 300 to 1200 K and dielectric constant (ε′) from 4·2 to 1200 K of A-type Nd₂O₂ pellets are reported here. Electrical conductivity (σ) data can be explained in terms of impurity. The dielectric constant (ε′) increases slowly up to 500 K as is expected for ionic solids. The increase ofε′ becomes much faster above 500 K, which is attributed to space charge polarization of thermally generated charge carriers.     

Enhancement of magnetic and dielectric properties of low temperature sintered NiCuZn ferrite by Bi2O3-CuO additives

With a series of 1.0 wt%Bi$_{2}$O$_{3}$-$x$ wt% CuO ($x =0.0$, 0.2, 0.4, 0.6, and 0.8) serving as sintering additives, Ni$_{0.23}$Cu$_{0.32}$Zn$_{0.45}$Fe$_{2}$O$_{4}$ ferrites are successfully synthesized at a low temperature (900 $^\circ$C) by using the solid state reaction method. The effects of the additives on the phase formation, magnetic and dielectric properties as well as the structural and gyromagnetic properties are investigated. The x-ray diffraction (XRD) results indicate that the added Bi$_{2}$O$_{3}$-CuO can lower the synthesis temperature significantly without the appearing of the second phase. The scanning electron microscope (SEM) images confirm that Bi$_{2}$O$_{3}$ is an important factor that determines the sintering behaviors, while CuO affects the grain size and densification. With CuO content $x=0.4$ or 0.6, the sample shows high saturation magnetization, low coercivity, high real part of magnetic permeability, dielectric permittivity, and small ferromagnetic resonance linewidth ($\Delta H$). The NiCuZn ferrites are a promising new generation of high-performance microwave devices, such as phase shifters and isolators.     

Er3+/Yb3+共掺TeO2-WO3-Bi2O3玻璃的光谱性质和上转换发光

本文制备了Er³⁺/Yb³⁺共掺TeO₂-WO₃-Bi₂O₃(TWB)玻璃. 测试和分析了样品的吸收光谱、荧光光谱及上转换发光. 用Judd-Oflet(J-O)理论计算了Er³⁺在玻璃样品中的光谱强度参数,随着Bi₂O₃含量的增加,Ω₂增加,Ω₄ 关键词： 碲酸盐玻璃 光谱性质 上转换     

掺Bi的GeO2-Al2O3-Na2O玻璃的热学和光学性质

 用高温熔融法制备了96GeO-(3-χ)Al₂O₃-χNa₂O-1NaBiO₃ （将χ分别为0，0.5，1.5的玻璃命名为A1，A2，A3）和 96GeO-(3.5-ψ)Al₂O₃-ψχNa₂O-0.5Bi₂O₃（将ψ分别为0，0.5，2的玻璃命名为B1，B2，B3）玻璃。观察到样品在1 220 nm处（800 nm 激光二极管激发）的超宽带发光特性（半高宽约250 nm）。结果表明，以NaBiO₃形式引入Bi⁵⁺到玻璃原料中比以Bi₂O₃形式引入Bi³⁺到原料中得到的玻璃在1 220 nm处的发光强度大4.6倍，且荧光寿命和荧光半高宽也分别从280 μs和195 nm增加到了434 μs和275 nm。从A3，A2和A1的吸收边带的红移可初步推断出A3，A2及A1玻璃中Bi5+的含量逐步增加。总结吸收光谱与发射光谱的变化规律，认为Bi离子近红外高发射强度和宽荧光半高宽是由Bi⁵⁺的发光引起的。在两组玻璃中，热稳定性以及荧光发射截面积与荧光寿命的乘积值和荧光发射截面积与荧光半高宽的乘积值随着Na₂O含量的增加而增加。     

硼酸铅玻璃的光学二次谐波产生

对硼酸铅玻璃体材料样品进行热辅助的平板电场极化(简称热极化)后,通过观察其光学二次谐波(SHG)信号的强弱,得到了不同组分的样品的最佳极化温度,发现其最佳极化温度与玻璃化温度满足一定的关系;同时得到了不同组分的样品在各自的最佳极化温度条件下极化后的二次谐波信号强度与组分的关系;经过对一种组分的样品进行细致研究,发现样品的二次谐波信号强度随着极化电压的增大而增大,并满足幂函数关系.利用有效偶极子释放模型解释了样品的二次谐波信号强度与极化电压之间的超平方关系 关键词： SHG 玻璃 极化     

Thermoelectric properties of unoxidized graphene/Bi2Te2.7Se0.3 composites synthesized by exfoliation/re‐assembly method

Nanocomposites of n‐type thermoelectric Bi₂Te_2.7Se_0.3 (BTS) and unoxidized graphene (UG) were prepared from the exfoliated BTS and UG nanoplatelets. Polycrystalline BTS ingots were exfoliated into nanoscoll‐type crystals by chemical exfoliation, and were re‐assembled with UG nanoplatelets. The composites were chemically reduced by hydrazine hydrate and sintered by a spark‐plasma‐sintering method. The thermoelectric properties of the sintered composites were evaluated and exhibited decreased carrier concentration and increased thermal conductivity due to the embedded graphene. The peak ZT values for the UG/BTS‐US and UG/BTS‐EX composites were ～0.8 at the UG concentration of 0.05 wt%. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural and dielectric properties of Pb(Li1/4Dy1/4W1/2)O3

The polycrystalline samples of Pb(Li_1/4Dy_1/4W_1/2)O₃ have been synthesized by high-temperature solid-state reaction techniques. Room temperature X-ray diffraction (XRD) studies of the compound provided preliminary structural data, and hence formation of a single phase desired material was confirmed. Detailed studies of dielectric constant (ε) and loss (tanδ) as a function of frequency (100 Hz to 10 kHz) at room temperature (298 K) and also as a function of temperature (liquid nitrogen to 403 K) at 10 kHz suggest that the compound undergoes a ferroelectric phase transition of diffuse type.     

对含Y_2O_3和Gd_2O_3的La_2O_3-B_2O_3-BaO玻璃化学稳定性研究

本文研究了含Ｙ２Ｏ３和Ｇｄ２Ｏ３的Ｌａ２Ｏ３－Ｂ２Ｏ３－ＢａＯ玻璃的耐水性和耐酸性。结果表明，比硅酸盐玻璃化学稳定性差的Ｌａ２Ｏ３－Ｂ２Ｏ３－ＢａＯ玻璃，可以适量的用Ｙ２Ｏ３和Ｇｄ２Ｏ３取代Ｌａ２Ｏ３，可得以改善     

Study of PbO-SrO-TiO2-B2O3 glass and glass ceramics

The glasses with composition (50−X)PbO–XSrO-25TiO₂-25B₂O₃ (where X=0, 5, 10 and 15 mol%) were prepared using conventional quenching technique. The T_g, T_c, density and CTE of the glass samples were measured. The T_g observed to increase with increasing concentration of SrO, while the T_c first decreased and then increased. The glass samples were converted to glass ceramics by following two stage heat treatment schedule. The glass ceramic samples were characterized by XRD, SEM and dielectric measurements. The XRD results revealed the formation of ferroelectric lead titanate as a major crystalline phase in glass ceramics. Additional phases observed include Sr₂B₂O₅ and PbB₂O₄. The room temperature (RT) dielectric constant of glass and glass ceramics are in the range of 100–120 which is promising for capacitor application.     

(Na1/2Bi1/2)Cu3Ti4O12陶瓷的微观结构和电学性质

利用固相反应法在不同烧结温度条件下制备了一系列(Na_1/2Bi_1/2)Cu₃Ti₄O₁₂(NBCTO)陶瓷样品,研究了它们的晶体结构、微观组织结构、介电性质和复阻抗及其随温度的变化. 实验发现NBCTO陶瓷所呈现出的电学性质与CaCu₃Ti₄O₁₂陶瓷相应的电学性质非常类似. 烧结温度为990℃至1060℃范围的NBCTO陶瓷样品室 关键词： 高介电材料 介电性质 复阻抗 内阻挡层电容     

Effect of TiO2 crystalline composition on the dielectric properties of TiO2/P(VDF‐TrFE) composites

In order to study the effect of the TiO₂ particle crystalline composition (with different proportions of rutile and anatase crystals) on the dielectric properties of the composite, titanium dioxide (TiO₂) particles and TiO₂/poly(vinylidene fluoride‐co‐trifluoroethylene) [P(VDF‐TrFE)] composites were synthesized by a reflux method and the solution route, respectively. The results indicated that the optimum TiO₂ particle crystalline composition is anatase content of 37% and rutile content of 63% for dielectric‐constant modifier applications. Furthermore, a dielectric constant of 25.7 with dielectric loss of 0.17 at 100 Hz at room temperature were obtained in the composite with 40 wt% TiO₂ particles. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effects of barium on the nonlinear electrical characteristics and dielectric properties of SnO2-based varistors

The effects of barium on electrical and dielectric properties of the SnO_2·Co_2O_3·Ta_2O_5 varistor system sintered at 1250℃ for 60min were investigated. It is found that barium significantly improves the nonlinear properties. The breakdown electrical field increases from 378.0 to 2834.5V/mm, relative dielectric constant (at 1kHz) falls from 1206 to 161 and the resistivity (at 1kHz) rises from 60.3 to 1146.5kΩ·cm with an increase of BaCO_3 concentration from 0mol% to 1.00mol%. The sample with 1.00mol% barium has the best nonlinear electrical property and the highest nonlinear coefficient (α=29.2). A modified defect barrier model is introduced to illustrate the grain-boundary barrier formation of barium-doped SnO_{2}-based varistors.     

Study of glasses and glass ceramics in Bi2O3-GeO2-Fe2O3 and Bi2O3-GeO2-Cr2O3 systems by optical spectroscopy

The ferroelectric Bi₂GeO₅ crystalline phase is synthesized by heat treatment of 1Bi₂O₃-1GeO₂-xFe₂O₃ and 1Bi₂O₃-1GeO₂-yCr₂O₃ glasses. The obtained glass ceramics and initial glasses are studied using X-ray diffraction analysis and optical spectroscopy. The dielectric characteristics are measured, and the Curie temperature is determined. The effect of chromium and iron ions on the absorption spectra and dielectric properties of glasses and glass ceramics is determined.     

Equivalent oxide thickness scaling of Al2O3/Ge metal-oxide-semiconductor capacitors with ozone post oxidation

Aluminum-oxide films deposited as gate dielectrics on germanium （Ge） by atomic layer deposition were post oxidized in an ozone atmosphere. No additional interfacial layer was electron microscopy and X-ray photoelectron spectroscopy detected by the high-resolution cross-sectional transmission measurements made after the ozone post oxidation （OPO） treatment. Decreases in the equivalent oxide thickness of the OPO-treated Al2O3/Ge MOS capacitors were confirmed. Furthermore, a continuous decrease in the gate leakage current was achieved with increasing OPO treatment time. The results can be attributed to the film quality having been improved by the OPO treatment.     

白光LED用B_2O_3-Bi_2O_3-Eu_2O_3-MO(M=Mg,Ca,Sr,Ba)红光发射荧光玻璃的结构与发光性能

采用熔融冷却法制备了铕掺杂碱土金属硼铋酸盐玻璃(BBME,BBCE,BBSE,BBBE)。研究了玻璃的密度、摩尔体积、光学碱度等物理性质,分析了玻璃的结构、光学性质和热稳定性。结果表明,从BBME到BBBE,玻璃结构致密程度不断下降。Eu~(3+)能较好地熔融到玻璃中,成为良好的发光中心,在465 nm和613 nm处分别有强烈的蓝光激发和橙红光发射,激发和发射强度从BBME到BBBE不断增强。玻璃均呈现非晶态,其结构对称性相对较低,从BBME到BBBE呈下降趋势。玻璃结构主要组成为非对称的[BO_3]三角体、松散的[BO_4]四面体、[BiO_3]三角体以及含[BO_4]四面体的三硼环、四硼环和五硼环,结构中均不存在硼六圆环,也不存在含[BO_3]三角体的五硼环、焦硼环和正硼环。研究结果表明,所研制的低温铕掺杂碱土金属硼铋酸盐玻璃具有热稳定好、折射率相对适宜的优点,有望成为未来白光LED(荧光粉)玻璃陶瓷的良好基质。     

Thermoelectric properties of Bi2Se3/Bi2Te3/Bi2Se3 and Sb2Te3/Bi2Te3/Sb2Te3 quantum well systems

In this work, we develop a theory of thermoelectric transport properties in two-dimensional semiconducting quantum well structures. Calculations are performed for n-type 0.1 wt.% CuBr-doped Bi₂Se₃/Bi₂Te₃/Bi₂Se₃ and p-type 3 wt.% Te-doped Sb₂Te₃/Bi₂Te₃/Sb₂Te₃ quantum well systems in the temperature range 50–600 K. It is found that reducing the well thickness has a pronounced effect on enhancing the thermoelectric figure of merit (ZT). For the n-type Bi₂Se₃/Bi₂Te₃/Bi₂Se₃ with 7 nm well width, the maximum value of ZT is estimated to be 0.97 at 350 K and for the p-type Sb₂Te₃/Bi₂Te₃/Sb₂Te₃ with well width 10 nm the highest value of the ZT is found to be 1.945 at 440 K. An explanation is provided for the resulting higher ZT value of the p-type system compared to the n-type system.     

Effect of uniaxial stress on the dielectric properties of BaTiO3+0.1wt.%Eu2O3 ceramics

ABSTRACT

BaTiO₃+0.1wt.%Eu₂O₃ ceramics were prepared by a solid-state reaction method. The dielectric behavior of these ceramics as a function of uniaxial pressure has been systematically studied. The external stress showed obvious effects on these properties. An increase of the Curie point (T_c) and decrease of the Curie–Weiss temperature (T₀) was observed with increasing pressure, resulting in an increase in the first-order nature of the phase transformation (T_c–T₀ increases). Broadening and flattening of the permittivity versus temperature curves near their maximum was found. The pressure behavior of thermal hysteresis and the ??/?T vs. T plot suggests that the phase transition changes to second-order type with increasing pressure. Furthermore, the Curie–Weiss constant obtained from a modified Curie–Weiss law strongly decreases with increasing pressure, suggesting that the mechanism of phase transition is going to order–disorder type.     

The effect of CuO and NiO doping on dielectric and ferroelectric properties of Na0.5Bi0.5TiO3 lead-free ceramics

In the present work, lead-free piezoelectric ceramics (Na_0.5Bi_0.5)TiO₃ –xCuO–yNiO (for x = 0.0, 0.02, 0.04 and 0.06) have been prepared by a conventional solid-state reaction method. An investigation of CuO and NiO doping in bismuth sodium titanate (BNT) and a study of the structure, morphology, and dielectric and ferroelectric properties of the NBT–CuNi system have been conducted. Phase and microstructural analysis of the (Na_0.5Bi_0.5)TiO₃ (NBT) based ceramics has been carried out using X-ray diffraction and scanning electron microscopy (SEM) techniques. Field emission scanning electron microscopy (FE-SEM) images showed that inhibition of grain growth takes place with increasing Cu and Ni concentration. The results indicate that the co-doping of NiO and CuO is effective in improving the dielectric and ferroelectric properties of NBT ceramics. Temperature-dependent dielectric studies have also been carried out at room temperature to 400 °C at different frequencies. The NBT ceramics co-doped with x = 0.06 and y = 0.06 exhibited an excellent dielectric constant ?_r = 1514. The study suggests that there is enormous scope of application of such materials in the future for actuators, ultrasonic transducers and high-frequency piezoelectric devices.     

钇和镧掺杂氧化铝陶瓷的热导及其介电弛豫特性研究

采用氧化物固相反应法,制备出纯氧化铝陶瓷及其分别掺杂稀土元素钇和镧的陶瓷样品.测量了样品的结构、介电特性和热导性能;研究了烧结温度对掺杂不同稀土元素的陶瓷样品的性能的影响.X射线衍射结果表明1500℃烧结后陶瓷样品形成了单一的固溶体.而氧化铝的热导率达到8.60W/（m·K）,样品的介电性能稳定.我们发现掺杂Y³⁺和La³⁺的氧化铝陶瓷存在介电弛豫现象,并对该现象进行了机理分析.     

BaCoxZn2-xFe16O27六角铁氧体电子结构与介电特性的第一性原理研究

提出了W型六角铁氧体BaCo_xZn_2-xFe₁₆O₂₇的晶体结构模型,并通过基于密度泛函理论框架下Hubbard参数U修正的广义梯度近似密度泛函理论方法研究了该材料的基态电子结构、磁性和静电介电性特性.Co和Zn共掺杂引起BaFe₁₈O₂₇的导电性从半金属转换到半导体.BaCo_xZn_2-xFe₁₆O₂₇的能隙随x增加而增加,品格常数和原胞磁矩随之而变小.介电常数计算表明,BaCo_xZn_2-xFe₁₆O₂₇的静电介电常数随x增加而增加,在6.2—7.2范围而且显示各向异性.Bom电荷计算分析表明Co和Zn本身极化对材料的介电常数和其各向异性影响不大.