γ射线在LSO晶体中的能量沉积

采用蒙特卡罗程序MCNP计算了γ射线在LSO晶体中的能量沉积分布并与相应的实验结果进行了对比,验证了该方法的正确性。在此基础上计算了不同能量的γ射线在LSO晶体中的能量沉积分布,分析了γ射线与物质的不同作用对晶体中能量沉积分布的影响,总结出在晶体轴向和径向的能量沉积分布规律。轴向上,不同能量γ射线在LSO晶体中的能量沉积近似为指数分布,在表面能量沉积密度较小;在径向方向,γ射线在入射轴线上能量沉积密度很高,在距入射轴较近的区域,主要是次级电子产生沉积能量,随着距离的增大,γ射线能量沉积逐渐减小;在距入射轴较远的区域,能量沉积主要是散射γ射线产生。     

Visible photoluminescence from silicon nanoclusters embedded in silicon nitride films prepared by remote plasma-enhanced chemical vapor deposition

The photoluminescence (PL) of silicon nanoclusters embedded in silicon nitride films grown by remote plasma-enhanced chemical vapor deposition at 200 °C, using mixtures of SiCl₄/H₂/Ar/NH₃ is investigated. It was found that the color and the intensity of the PL of the as-grown samples depend on the H₂ flow rate, and there is an optimum flow for which a maximum luminescence is obtained. A strong improvement of the PL intensity and change in color was obtained with annealing treatments in the range of 500–1000 °C. The changes in the composition, structure and optical properties of the films, as a function of H₂ flow rate and thermal treatments, were studied by means of Fourier-transform infrared spectroscopy, X-ray photoelectron spectroscopy, ellipsometry and ultraviolet–visible transmission measurements. We conclude that the PL can be attributed to quantum confinement effect in silicon nanoclusters embedded in silicon nitride matrix, which is improved when a better passivation of the nanoclusters surface is obtained.     

中子引起单粒子翻转过程中能量沉积统计分析

利用Monte Carlo方法,对14MeV中子引起存储器单粒子翻转过程进行了计算模拟,从而对引起单粒子翻转的关键因素——存储器灵敏区中的能量沉积进行了统计分析,为了解单粒子翻转随机过程提供了详细的能量沉积统计信息。The process of the single event upset induced by 14 MeV neutrons in SRAM silicon chip is simulated by using a Monte Carlo method. The deposited energies in sensitive volumes in the chip, which is an important factor in the single event upset, are statistically analysed. The statistic information about the deposited energies is provided for understanding the detailed random process of the single event upset.     

Stress modifications induced by dimer vacancies in the Si(0 0 1) surface: Monte Carlo simulations

By means of Monte Carlo simulations, we investigate the local stress modifications induced by dimer vacancies (DVs) in the Si(0 0 1) subsurface layers. In presence of n isolated compact DVs, the sites located below these defect rows are under clearly compressive stress in the third layer and under more and more tensile stress, as n increases, in the fourth layer. At higher DVs densities, analogous trends are observed, but the stress modifications are then slightly extended between the dimer rows. Applying our results to the Ge penetration in Si(0 0 1), we show how the knowledge of the local stress may allow predictions of a given impurity behaviour in the vicinity of the surface, provided that the impurity-defect and impurity-impurity interactions do not play a major role compared to the local stress modification induced by the presence of DVs.     

γ射线在大气中产生康普顿电流的快速计算方法

康普顿电流是激励核电磁脉冲的主要机制。为了提高核电磁脉冲数值模拟中射线产生康普顿电流过程的计算效率,发展了一种射线在均匀大气中产生康普顿电流的快速计算方法。首先通过计算康普顿电子在出射方向上的衰减特征,得到在电子出射方向净电子流与其射程和出射距离的拟合关系,然后结合康普顿散射微分截面,给出单能射线在大气中产生的康普顿电流密度的解析数值计算方法。和蒙特卡罗程序的计算结果比较,用该方法计算得到的电流密度值差异在10％以内,计算速度提高两个量级以上。该计算方法可用于大气中康普顿电流的快速估算。     

低能中子在锆中产生的辐照损伤的计算机模拟研究

以GEANT4为基础采用蒙特卡罗方法对能量为1 MeV的中子在锆 材料中的输运过程进行了模拟分析. 首先计算得出: 反冲核的能量主要分布在1 keV和15 keV之间, 中子和靶核发生两次弹性碰撞的平均空间距离为29.47 mm. 由于中子和靶核在发生连续两次弹性碰撞过程中产生的两个反冲核能量较低, 它们的空间距离又比较大, 由此可以推测出: 由初级离位原子产生的后续级联碰撞可以看做是一系列独立的子级联碰撞过程, 同时也计算了中子在靶材的不同深度区域内产生的反冲核数目和平均能量. 其次, 利用蒙卡方法计算得到的结果, 采用分子动力学方法, 分别计算了五种不同能量下的初级离位原子产生的级联碰撞情况, 给出了初级离位原子的能量与其产生的次级离位原子数目之间的关系以 及不同能量下的初级离位原子产生的损伤区域范围等情况, 通过蒙特卡罗方法和分子动力学方法的结合, 给出了能量为1 MeV的中子在锆材料中产生的初级辐照损伤分布图像. 关键词： 辐照损伤 级联碰撞 蒙特卡洛模拟 分子动力学     

O2非平衡态等离子体中电子平均能量的谱线监测

采用蒙特卡罗方法,模拟了O2非平衡态直流放电等离子体过程。计算了不同E/N条件下电子在氧气中的漂移速度,结果与实验数据符合得很好。模拟了电子平均能量和电子激发态粒子数随E/N的变化关系。提出了一种通过监测两条紫外谱线202.6和280nm强度之比来监测电子平均能量的方法。该方法对于非平衡态气体放电等离子体在材料制备、激光应用及微电子技术等领域中的应用具有重要意义。     

10—20MeV中子引起单粒子翻转能量沉积统计分析

基于Monte Carlo计算模拟, 对10—20MeV中子引起存储器单粒子翻转能量沉积进行了统计分析, 为了解单粒子翻转随机过程提供能量沉积统计信息.     

Energy loss spectra of low primary energy (E0 ? 1 keV) electrons backscattered by silicon dioxide

A Monte Carlo simulation is described and utilized to calculate the energy distribution spectra of the electrons backscattered by silicon dioxide. Spectra are presented for incident energies of 250 eV, 500 eV, and 1000 eV. Spectra interpretation is based on a semiquantitative valence-band structure model for SiO₂ crystals.     

Revealing sol-gel type main effects by exploring a molecular cluster behavior in model in-plane amphiphilic aggregations

In-plane (bio)matter aggregations of amphiphilic nature are modeled extensively by Monte Carlo simulation in their natural entropic contexts. The modeling starts by designing the aggregations at a molecular level, pointing to its well-known configuration vs conformation character. Then, the conformational behavior is distributed over the aggregations obtained, with the aim of revealing their main sol-gel type (viscoelastic) effects. The passage between the resulting sol and gel phases is not controlled by a scan in the temperature domain, on the contrary, the control parameter is selected to be the hydrophobic-interaction strength while the temperature remains unchanged. The distribution of ordered fringed micelles, and the overall crystalline inclusions of the gel phase, suggested a first-order phase change, reasonably conceivable in terms of Avrami-Kolmogorov formalism for such hydrophobic-force driven and percolation-in-nature systems. A phase transition diagram has been presented as a novel proposition to discern between sol vs gel phases. As specific results, also of high experimental value, a damped-oscillating cluster-involving effect on the resulting hydrophobic-polar matrices has been detected and analysed. Other additional intermolecular-sharing entropy-influenced effects on clustering, as seen in terms of chain-to-chain connectivities, have been addressed as being of sufficient relevance to the gelation mechanism described. The microcrystalline inclusions downgrade to some extent the overall picture of entropy-affected gelation, being all together suitable for experimental check-out.     

Investigation of optical emission spectroscopy in diamond chemical vapor deposition by Monte Carlo simulation

The optical emission spectra(atomic hydrogen(Hα,Hβ,Hγ),atomic carbon C(2p3s→2p2:λ=165.7 nm) and radical CH(A2△→X2П:λ=420-440 nm))in the gas phase process of the diamond film growth from a gas mixture of CH4 and H2 by the technology of electron-assisted chemical vapor deposition (EACVD)have been investigated by using Monte Carlo simulation.The results show that the growth rate may be enhanced by the substrate bias due to the increase of atomic hydrogen concentration and the mean temperature of electrons.And a method of determining the mean temperature of electrons in the plasma in-situ iS given.The strong dependence on substrate temperature of the quality of diamond film mainly attributes to the change of gas phase process near the substrate surface.     

A novel method for detecting and counting overlapping tracks in SSNTD by image processing techniques

Overlapping object detection and counting is a challenge in image processing. A new method for detecting and counting overlapping circles is presented in this paper. This method is based on pattern recognition and feature extraction using “neighborhood values“ in an object image by implementation of image processing techniques. The junction points are detected by assignment of a value for each pixel in an image. As is shown, the neighborhood values for junction points are larger than the values for other points. This distinction of neighborhood values is the main feature which can be utilized to identify the junction points and to count the overlapping tracks. This method can be used for recognizing and counting charged particle tracks, blood cells and also cancer cells. The method is called “Track Counting based on Neighborhood Values” and is symbolized by “TCNV”.