Thermoluminescence and photoluminescence studies on gamma irradiated CsI: Pb2+ crystals

Pure and Pb²⁺-doped CsI crystals have been grown by the Bridgemann technique. Optical absorption, thermoluminescence (TL) and photoluminescence (PL) measurements have been performed. In undoped and Pb²⁺-doped cesium iodide crystals, F-centers and V-centers have been produced at 770 nm and 350 nm, respectively. In Pb²⁺-doped crystals, additional centers at 373 nm, 290 nm and 258 nm bands have been produced. In undoped samples, only two glow peaks at 343 K and 373 K have been produced, and in Pb²⁺-doped samples additional glow peaks at 383 K and 423 K have been produced. For all the samples, TL emission, PL and excitation measurements have been performed.     

Time-resolved OSL studies of YAlO3:Mn2+ crystals

Time-Resolved Optically Stimulated Luminescence (TR-OSL) from single crystalline YAlO₃:Mn²⁺ samples was investigated using a green light emitting diode (λ ∼ 525 nm) as stimulation light source. The TR-OSL decay curve of the material can be described with a single exponential decay function with a lifetime about 80 ms that does not depend on irradiation dose in the range from 50 mGy to 1 kGy. This OSL decay is superposed on a photoluminescence signal with a much shorter (3.5 ms) decay lifetime. The Mn²⁺ photoluminescence decay with a lifetime of 3.5 ms can be easily eliminated by corresponding time resolution using pulsed OSL readout. Dose response and thermal stability of the OSL signal are consistent with the previous thermoluminescent (TL) studies of the material.     

Critical view on TL/OSL properties of Li2B4O7 nanoparticles doped with Cu,Ag and co-doping Cu,Ag: Dose response study

Small size (25 nm) Li₂B₄O₇ nanoparticles doped with different concentrations of Cu, Ag and co-doped with Cu, Ag were prepared by solid state sintering at 700 °C. The crystalline phase and particle sizes analysis were carried out by XRD and TEM. FTIR study reveals the formation of vibrational bonds at 1600–1200 cm⁻¹, 1500–700 cm⁻¹, 950–870 cm⁻¹ and 870–415 cm⁻¹. The kinetic parameters of the TL glow curves were evaluated using CGCD procedure in R-software. The CW-OSL decay curves were fitted with third order exponential decay curves and photoionization cross sections of each component were evaluated. The lifetime of the main TL dosimetric peak were also calculated to check the stability of the signal. Dose responses of the synthesized Li₂B₄O₇ nanoparticles for both the TL and CW-OSL were studied in the range of 0.02 mGy to50 Gy and found to be linear upto this range. Fading of the CW-OSL decay curves were also studied. The MDD of the synthesized samples were also calculated and observed to be 15 μGy.     

Features of OSL and TL properties of anion-defective corundum crystals exposed to thermo-optical treatment

The results of systematic investigation of the mechanisms and role of phototransfer in TL and OSL processes in α-Al₂O_3−δ crystals under controlled filling of the main and deep traps depleted at 450 and 720 K, respectively, are presented.Optical depletion spectra of the main and deep traps were measured and compared. It was found that green light stimulation only depletes the main trap, while blue light depletes both the main and deep traps. Optical depletion of the deep trap results in phototransfer of charges that can be realized by 2 mechanisms: either through the main trap to recombination centers or directly to the latter. However, the dominant contribution to the OSL signal is provided by phototransfer through the main trap. It is also found that UV emission at 3.7 eV dominates over F-emission at 3.0 eV in the phototransferred TL spectrum. It is assumed that this UV emission is not related to the F⁺ centers.     

Angular dependences of sputtering ratio,ion-electron emission coefficient and ion-induced photon emission yield at oblique ion incidence on crystalline targets

The angular dependences of the sputtering ratio, ion-induced photon emission yield and the ion-electron emission coefficient for two faces of a copper'crystal at glancing angles of ion incidence on the targets has been experimentally studied.     

OSL, RL and TL characterization of rare-earth ion doped K2YF5: Application in dosimetry

Optically stimulated luminescence (OSL) properties of K₂YF₅ crystals singly doped with different concentrations of Tb³⁺ ions and doubly doped with Tb³⁺ and Ce³⁺ or Tb³⁺ and Dy³⁺ have been investigated for the first time. Radioluminescence spectra and OSL efficiency for stimulation with different wavelengths of light have been analyzed for each compound. Also, dosimetric characteristics of the most efficient composition, namely K₂YF₅:1 at.% Tb³⁺, have been studied. Finally, the OSL signal peculiarities for K₂YF₅:1 at.% Tb³⁺ have been compared to those of a commercial Al₂O₃:C dosimeter.     

Crystal-Size Dependence of Replenishment Effect in BaFBr:Eu

Excitation spectra of photo-stimulated luminescence (PSL) in BaFBr:Eu and BaFBr:Eu ? Na crystals were studied. Replenishment of PSL at liquid helium temperature was investigated in crystals of various sizes including a commercially available X-ray storage phosphor plate (Image Plate). Although a weak replenishment effect was observed in the fine powder crystals, no replenishment effects were observed in Image Plate, while it showed strong PSL at liquid helium temperature. Results indicate that there are two types of PSL centers, one consists of spatially correlated electrons and holes and the other consists of electrons and holes trapped at isolated centers. Lack of the replenishment effect in Image Plate indicates that trapped electrons are stabilized by the surface and need thermal activation to recombine with holes which are possibly trapped at doped Eu^2?.     

Luminescence of aggregate centers in CsBr:Eu2+ single crystals

We have used the Bridgman method to grow CsBr:Eu²⁺ single crystals, adding an activator to the mix in the form of Eu₂O₃ in amounts of 0.0125, 0.0250, and 0.0500 mole %. At T = 300 K, we studied the absorption spectra, the photoluminescence (PL) spectra, and the photostimulated luminescence (PSL) spectra of the grown crystals. We have established that the structure of the photoluminescence and photostimulated luminescence centers in crystals grown from the CsBr:Eu₂O₃ mix includes isolated dipole centers Eu²⁺-V_Cs, emitting in bands with maxima at 432 nm and 455 nm respectively, and in crystals grown at activator concentrations of 0.025 and 0.050 mole % they also include aggregate centers (AC) based on CsEuBr₃ nanocrystals with emission bands at 515 m and 523 nm. We have shown that the maximum concentration of aggregate centers of the CsEuBr₃ nanocrystal type in CsBr:Eu²⁺ crystals is achieved for an activator content in the mix within the range 0.01–0.05 mole %. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 3, pp. 359–362, May–June, 2006.     

Optical depth of traps in AL2O3:C determined by the variable energy of stimulation OSL (VES-OSL) method

Standard methods of OSL measurements (CW-OSL or LM-OSL) do not allow for the direct determination of optical depth of traps. The variable energy of stimulation optically stimulated luminescence (VES-OSL) method gives such possibility. It consists in optical stimulation with the continuous increase of stimulation light energy and is analogous to the glow curve method in TL measurements. The VES-OSL curve shape and maximum position can be regulated by the stimulation photon flux, the rate of stimulation energy increase and by measurement temperature. This allows for detecting the OSL from very deep traps that give the TL signal overlapping with strong incandescence. The VES-OSL measurements carried out for Al₂O₃:C showed that traps having the optical depth between 2.0 and 2.8 eV are responsible for the OSL signal related to TL peak at about 200 °C. The OSL signal from the much deeper traps from the range 2.8–3.3 eV was also detected. The TL signal related do these traps cannot be detected below 500 °C.     

电子俘获光存储材料BaLiF3:Eu2+的光激励发光及光存储性质研究

利用高温固相反应法制备了混晶状的BaLiF3:Eu2 样品.其紫外光激发的发射峰与光激励发光峰均在410 nm处,属于Eu2 的5d-4f跃迁发光.光激励峰位于660 nm,因而可以配用简单廉价的氦氖激光器.根据光谱特征给出了光激励发光的简单机理.测量了该材料光激励发光衰减性能,结果表明BaLiF3:Eu2 存储的信息可以方便地擦除掉.该材料具有优良的光激励发光特性,是一类很有发展前途的电子俘获光存储材料.     

Investigation of defect centres responsible for TL/OSL in MgAl2O4:Tb

Magnesium aluminate doped with Tb³⁺ (MgAl₂O₄:Tb³⁺) was prepared by combustion synthesis. Three thermoluminsence (TL) peaks at 120, 220 and 340 °C were observed. PL and TL emission spectrum shows that Tb³⁺ acts as the luminescent centre. Optically stimulated luminescence (OSL) was observed when stimulated by 470 nm blue light.Electron spin resonance (ESR) studies were carried out to identify the defect centres responsible for the TL and OSL processes in MgAl₂O₄:Tb³⁺. Two defect centres were identified in irradiated MgAl₂O₄:Tb³⁺ phosphor by ESR measurements which was carried out at room temperature and these were assigned to V and F⁺ centres. V centre (hole centre) is correlated to 120 and 220 °C TL peaks and F⁺ centre (electron centre), which acts as a recombination centre is correlated to 120, 220 and 340 °C.     

Thermoluminescence and optically stimulated luminescence characteristics of Al2O3 doped with Tb

In the present work policrystals of α − Al₂O₃ doped with terbium were synthesized using the solvent evaporation method. The samples were prepared using Al(NO₃)₃·9H₂O and Tb(NO₃)₃·5H₂O reagents, with Tb concentrations between 1 and 5 mol% and thermally treated at high temperature above ∼1400 °C. X-ray diffraction measurements showed the α-phase formation of samples. TL glow curve presented an intense peak at ∼190 °C and two other with low intensity at 290 and 350 °C after gamma irradiation. The best doping concentration which presented high luminescence was the sample doped with 3 mol% of Tb. TL spectra and fluorescence measurements showed similar luminescence spectra with lines attribute to Tb³⁺ ions. A linear behavior to gamma dose between 1 and 20 Gy was observed in TL, using 190 °C peak as well as in OSL signal, this last carried out using 532 nm wavelength stimulation.     

Characteristic features of thermoluminescence kinetics in dosimetric aluminum oxide crystals

We have studied the thermoluminescence curves in the 420 nm band (F centers) and the 330 nm band (F⁺ centers) within the temperature range of the dosimetric peak (T_max = 450 K) in anion-deficient aluminum oxide crystals. Assuming general-order kinetics, we have analyzed the thermoluminescence decay curves on the rising and falling sides of the dosimetric peak, in samples with different degrees of deep trap filling. We have established differences in the order of the kinetics within different temperature ranges of the dosimetric peak. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 2, pp. 187–190, March–April, 2006.     

Thermally assisted OSL (TA-OSL) reproducibility in Al2O3:C and its implication on the corresponding thermoluminescence (TL) reproducibility

Thermally assisted optically stimulated luminescence (TA-OSL) method is an excellent advancement of high-dose luminescent dosimetry with involvement of very deep traps. This specific method has been reported to be very efficient for the cases of anion deficient alumina doped with carbon and quartz. Nevertheless, reproducibility and sensitivity changes have been previously studied only for the case of quartz. In the present study, reproducibility was studied in both terms of quantitative and qualitative features, such as signal intensity and glow curve shape respectively, for both TL and TA-OSL signals on various TLD 500 dosimeters. Finally, for the case of the TL signal, sensitivity changes were studied with and without applying TA-OSL, towards studying the impact of the TA-OSL on the main dosimetric TL signal.     

Congruent Sr 0.61 Ba 0.39 Nb 2 O 6 doubly doped with Ce and Cr: PHoto- and thermoluminescence investigations

Congruent Sr x Ba 1 m x Nb 2 O 6 (SBN, x=0.61) doped with Ce or Cr ions exhibits enhanced photorefractive properties and new spectral features like increased red sensitivity. Here special emphasis is placed on the luminescence features of doubly doped Ce+Cr SBN crystals. The luminescence excitation and emission spectra combined with the absorption of the impurities allow to draw conclusions about the origin of the charge carriers und their recombination. The well separated thermo-luminescence peaks detected and their spectral line shape in emission point to specific recombination processes following the thermal liberation of light-induced electron trapping centers: Nb 4+ polarons and VIS-centers created at low temperature under light irradiation. The thermal activation energy for the hopping motion of Nb 4+ polarons and of VIS-centers are estimated to be 0.18 - 0.02 v eV and 0.30 - 0.05 v eV respectively. Possible excitation and recombination mechanisms in SBN:Ce+Cr are discussed.     

Recombination processes in lanthanum beryllate single crystals doped with Ce3+ and Pr3+ ions

The paper presents experimental results on recombination processes in lanthanum beryllate (BLO) single crystals (undoped BLO, and doped with 0.5 at % by Ce³⁺ and Pr³⁺ ions) obtained using XRL-spectroscopy at T = 8, 80 and 290 K and thermoluminescence technique in the temperature range of 8–650 K. The paper discusses spectra of the steady-state XRL-luminescence recorded in the energy range from 1.5 to 6.2 eV at different temperatures between 8 and 290 K; temperature dependences of XRL intensity recorded in the temperature range from 8 to 650 K; thermoluminescence glow curves recorded in spectral-integrated regime after X-ray exposure at T₀ = 8 or 290 K.     

Eu2+在磷酸镧中的发光及Ce3+→Eu2+的能量传递

采用高温固相反应合成了LaPO₄:Eu²⁺和LaPO₄:Ce³⁺,Eu²⁺样品,报道了Eu²⁺在LaPO₄中的发光性质和Ce³⁺→Eu²⁺的能量传递现象。文中探讨了Ce³⁺→Eu²⁺的能量传递机理,根据Dexter电多极相互作用的理论证明其为偶极子偶极子相互作用的共振能量传递。     

Tm3+掺杂SrAl2O4:Eu2+的光激励和热释光性能

通过高温固相法制备出Sr_{0.98-xAl2O4:0.02Eu²⁺,xTm³⁺(x=0,0.01,0.02,0.03,0.04,0.05)系列样品,并对其光激励和热释光性能进行了研究。在SrAl2O4:Eu²⁺原有陷阱能级结构的基础上,通过Tm³⁺的掺杂引入了更深的陷阱TB,并增加原有陷阱TA浓度,进而优化了材料的光存储容量及光激励特性。对比研究了系列样品的初始光激励发光强度和热释光强度随着Tm³⁺掺杂量的变化规律,证实陷阱TB为光激励发光提供了有效俘获中心。当Tm³⁺的掺杂摩尔分数x=0.03时,材料中的陷阱TB的浓度达到最高值,同时光激励发光强度最大。对比Tm³⁺共掺前后热释光图谱,通过Chen's半宽法计算出了引入陷阱TB的陷阱深度。实验结果证实材料中TB的浓度对其光激励发光性能起着决定性的作用。在980 nm激发下,由深陷阱TB释放出来的电子可以再次被浅陷阱TA俘获,这种浅陷阱TA的再俘获效应在光激励发光过程中表现为光激励余辉现象。}     

Photoluminescence and afterglow behavior of Eu, Dy and Eu, Dy in Sr3Al2O6 matrix

This paper reports the photoluminescence and afterglow behavior of Eu²⁺ and Eu³⁺ in Sr₃Al₂O₆ matrix co-doped with Dy³⁺. The samples containing Eu²⁺ and Eu³⁺ were prepared via solid-state reaction. X-ray diffraction (XRD), photo luminescent spectroscope (PLS) and thermal luminescent spectroscope (TLS) were employed to characterize the phosphors. The comparison between the emission spectra revealed that Sr₃Al₂O₆ phosphors doped with Eu²⁺, Dy³⁺ and Eu³⁺, Dy³⁺ showed different photoluminescence. The phosphor doped with Eu³⁺, Dy³⁺ showed an intrinsic f-f transition generated from Eu³⁺, with two significant emissions at 591 and 610 nm. However, the phosphor doped with Eu²⁺, Dy³⁺ revealed a broad d-f emission centering around 512 nm. After the UV source was turned off, Eu²⁺, Dy³⁺ activated Sr₃Al₂O₆ phosphor showed excellent afterglow while Eu³⁺, Dy³⁺ activated phosphor almost showed no afterglow. Thermal simulated luminescence study indicated that the persistent afterglow of Sr₃Al₂O₆: Eu²⁺, Dy³⁺ phosphor was generated by suitable electron traps formed by the co-doped rare-earth ions (Dy³⁺) within the host.