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1.
Nanocomposite polymer electrolyte thin films of polyvinyl alcohol (PVA)-orthophosphoric acid (H3PO4)-Al2O3 have been prepared by solution cast technique. Films are irradiated with 50 MeV Li3+ ions having four different fluences viz. 5?×?1010, 1?×?1011, 5?×?1011, and 1?×?1012 ions/cm2. The effect of irradiation on polymeric samples has been studied and characterized. X-ray diffraction spectra reveal that percent degree of crystallinity of samples decrease with ion fluences. Glass transition and melting temperatures have been also decreased as observed in differential scanning calorimetry. A possible complexation/interaction has been shown by Fourier transform infrared spectroscopy. Temperature-dependent ionic conductivity shows an Arrhenius behavior before and after glass transition temperature. It is observed that ionic conductivity increases with ion fluences and after a critical fluence, it starts to decrease. Maximum ionic conductivity of ~2.3?×?10?5 S/cm owing to minimum activation energy of ~0.012 eV has been observed for irradiated electrolyte sample at fluence of 5?×?1011 ions/cm2. The dielectric constant and dielectric loss also increase with ion fluences while they decrease with frequency. Transference number of ions shows that the samples are of purely ionic in nature before and after ion irradiation.  相似文献   

2.
The polymeric blends of polyvinyl chloride (PVC) and polyethylene terephthalate (PET) with equal composition by weight have been irradiated with 50 MeV Li3+ ions at different fluences. The AC electrical properties of polymeric blends were measured in the frequency range 0.05–100 kHz, and at temperature range 40–150 °C using LCR meter. There is an exponential increase in conductivity with log of frequency and effect is significant at higher fluences. The value of tan δ and dielectric constant are observed to change appreciably due to irradiation. The loss factor (tan δ) versus frequency plot suggests that the capacitors of polymeric blend of PVC and PET may be useful below 10 kHz. No change in dielectric constant was observed over a wide temperature range up to 150 °C. Thermal stability was studied by thermogravimetric analysis. Thermal analysis revealed that chain scission is the dominant phenomena in the polymeric blends resulting in the reduction of its thermal stability. It appears from differential scanning calorimetry studies that the melting temperature decreases as fluence increases. FTIR spectra measurements also revealed that the material suffered severe degradation through bond breaking beyond the fluence of 2.3×1013 ions/cm2.  相似文献   

3.
Composites, containing different concentrations of palladium (II) acetylacetonate in polymethyl methacrylate (PMMA) matrix were prepared by vigorous mixing. PMMA was prepared by solution polymerization technique. The composites were irradiated with a 120 MeV Ni10+ beam at two different fluences of 1×1011 and 5×1012 ions/cm2 to study ion-induced effects on their dielectric, structural properties and surface morphology. AC electrical properties of these samples were studied in the frequency range 100 Hz to 10 MHz. The dielectric permittivity/loss shows frequency dependent behavior and it obeys the universal law of dielectric (i.e.f n?1) for pristine and irradiated samples at high frequency. The crystalline size and crystallinity of the composites were studied by X-ray diffraction analysis. Decrease in peak intensity after irradiation signifies the amorphization which is also responsible for decrease in T g as obtained by means of differential scanning calorimetry measurement. Fourier transform infrared spectra also support this result. Surface roughness increases upon irradiation as observed from scanning electron microscopy.  相似文献   

4.
HfO2-based metal-oxide semiconductor (MOS) capacitors were irradiated with high-energy ion beam to study the irradiation effects in these films. HfO2 thin films deposited by radio frequency (rf)-sputtering were irradiated with 80 MeV O6+ ions. The samples were irradiated and characterized at room temperature. Devices were characterized via 1 MHz capacitance–voltage (C?V) measurements using the midgap method. The irradiation induced dispersion in accumulation and depletion regions with increasing fluence is observed. After irradiation, the midgap voltage shift (Δ V mg) of?0.61 to?1.92 V, flat band voltage shift (Δ V fb) of?0.48 to?2.88 V and threshold voltage shift (Δ V th) of?0.966 to?1.96 V were observed. The change in interface trap charge and oxide trap charge densities after 80 MeV O6+ ions irradiation with fluences were determined from the midgap to flat band stretch out of C?V curves. The results are reported and explained in terms of changes in microstructure and dielectric properties of the HfO2 thin films after irradiation.  相似文献   

5.
Heavy ion impact has been known to cause a loss of light elements from the near-surface region of the irradiated sample. One of the possible approaches to a better understanding of the processes responsible for the release of specific elements is to irradiate shallow-implanted samples, which exhibit a well-known depth distribution of the implanted species. In this work, the samples studied were produced by implantation of Si<1 0 0>wafers with 11B at implantation energies of 250 and 500 eV and fluence of 1.0×1015 atoms/cm 2. Elastic Recoil Detection Analysis was applied to monitor the remnant boron fluence in the sample. Irradiation of the samples by a 14.2 MeV 19F 4+ beam resulted in a slow decrease of boron remnant fluence with initial loss rates of the order of 0.05 B atom per impact ion. Under irradiation with 12 MeV 32S 3+ ions, the remnant boron fluence in Si decreased exponentially with a much faster loss rate of boron and became constant after a certain heavy ion irradiation dose. A simple model, which assumes a finite desorption range and corresponding depletion of the near-surface region, was used to describe the observations. The depletion depths under the given irradiation conditions were calculated from the measured data.  相似文献   

6.
The present work aims to investigate the pre- and post-effect of 50 MeV Li3+ ion irradiation at a fluence of 5×1013 ions/cm2 on the dielectric properties of Y3+xFe5?xO12, x=0.0, 0.2, 0.4 and 0.6, garnet system over broad temperature, 300–673 K, and frequency, 100 Hz–13 MHz, ranges. Thermal variation of ac resistivity measurements suggests that the mechanism responsible for conduction in the system is polaron hopping. The observed modifications in dielectric properties after swift heavy ion irradiation are mainly due to the modifications of the metal–insulator contacts due to radiation damage-induced disorder and irradiation-induced point/cluster of defects in the material and also compressive strain generated in the lattice structure. The electric modulus presentation and the complex impedance spectral analysis have been employed to study the relaxation process. The YFeO3 phase is found to be irradiation hard phase as compared with the garnet phase.  相似文献   

7.
The structural, optical and electrical properties of 60 MeV C5+ ion-irradiated poly(3-methylthiophene) (P3MT) synthesized by the chemical oxidation polymerization method have been studied. The P3MT powder was dissolved in chloroform (CHCl3), and thin films of thickness 2 μm were prepared on glass and Si substrates. The polymerization was confirmed by the FTIR spectrum. Then films were irradiated by 60 MeV C5+ ions at different fluences. FTIR spectra show methyl group evolution after irradiation. The optical band gap decreases slightly after irradiation and the DC conductivity increases by about one order of magnitude after irradiation at the highest fluence. The role of S e has also been discussed when compared with 60 MeV Si5+ ion irradiation of P3MT. The morphological changes are observed using SEM.  相似文献   

8.
Makrofol-N polycarbonate was irradiated with carbon (70 MeV) and copper (120 MeV) ions to analyze the induced effects with respect to optical and structural properties. In the present investigation, the fluence for carbon and copper beams was kept in the range of 1×1011– 1×1013 ions/cm2 to study the swift heavy ion induced modifications. UV–VIS, FTIR and XRD techniques were utilized to study the induced changes. The analysis of UV–VIS absorption studies revealed that the optical energy gap was reduced by 17% on carbon irradiation, whereas the copper beam leads to a decrease of 52% at the highest fluence of 1×1013 ions/cm2. The band gap can be correlated to the number of carbon atoms, N, in a cluster with a modified Robertson's equation. In copper (120 MeV) ions irradiated polycarbonate, the number of carbon atoms in a cluster was increased from 63 to 269 with the increase of ion fluence from 0 to 1×1013 ions/cm2, whereas N is raised only up to 91 when the same polymer films were irradiated with carbon (70 MeV) ions under similar conditions. FTIR analysis showed a decrease in almost all characteristic absorption bands under irradiation. The formation of hydroxyl (? OH) and alkene (C?C) groups were observed in Makrofol-N at higher fluence on irradiation with both types of ions, while the formation alkyne end (R? C≡ CH) group was observed only after copper ions irradiation. The radii of the alkyne production of about 3.3 nm were deduced for copper (120 MeV) ions. XRD measurements show a decrease in intensity of the main peak and an increase of the average intermolecular spacing with the increase of ion fluence, which may be attributed to the structural degradation of Makrofol-N on swift ion irradiation.  相似文献   

9.
Ni/SiO2/Si MOS structures were fabricated on n-type Si wafers and were irradiated with 50 MeV Li3+ ions with fluences ranging from 1×1010 to 1×1012 ions/cm2. High frequency CV characteristics are studied in situ to estimate the build-up of fixed and oxide charges. The nature of the charge build-up with ion fluence is analyzed. Defect levels in bulk Si and its properties such as activation energy, capture cross-section, trap concentration and carrier lifetimes are studied using deep-level transient spectroscopy. Electron traps with energies ranging from 0.069 to 0.523 eV are observed in Li ion-irradiated devices. The dependence of series resistance, substrate doping and accumulation capacitance on Li ion fluence are clearly explained. The study of dielectric properties (tan δ and quality factor) confirms the degradation of the oxide layer to a greater extent due to ion irradiation.  相似文献   

10.
MeV ions passing through polymeric films modify their electrical, optical and thermal properties and these changes are related to changes in the chemical structure of the polymers. Ethylene vinyl acetate (EVA) films were irradiated with 3 MeV proton beam at different fluences of 1013, 1014 and 1015 ions/cm2. AC electrical properties of pristine and irradiated samples were studied in the frequency range 100 Hz to 100 kHz by means of an LCR meter. There is an exponential increase in conductivity with log frequency and conductivity increases as fluence increases. The dielectric loss/constant is observed to change with the fluence. FTIR spectra reveals significant change in intensities of functional groups at a fluence of 1015 ions/cm2 due to scissioning of polymer chains.  相似文献   

11.
The effect of swift heavy ion irradiation on ferromagnetic metallic glasses Fe40Ni38Mo4B18 and Fe78Si9B13 has been studied. The ion beams used are 100 MeV 127I and 180 MeV 197Au. The specimens were irradiated at fluences ranging from 3 × 1012 to 1.5 × 1014 ions/cm2. The irradiations have been carried out at temperatures 100 and 300 K. The magnetic moments are sensitive towards the irradiation conditions such as irradiation temperature and stopping power of incident ion beam. The irradiation-induced effects have been monitored, by using Mössbauer spectroscopy. The modifications in magnetic anisotropy and hyperfine magnetic field distributions, as an effect of different irradiation temperature as well as different stopping power have been discussed. After irradiation, all the samples remain amorphous and magnetic anisotropy considerably changes from its original in-plane direction. The results show enhancement in magnetic anisotropy in the specimen irradiated at 100 K, as compared to that of irradiated at 300 K. It is expected that at low temperature, the stresses produced in the material would remain un-annealed, compared to the samples irradiated at room temperature and therefore, the modification in magnetic anisotropy would be enhanced. A distribution of hyperfine magnetic field, of the samples irradiated at low temperature, show a small but distinct peak at ~?11 Tesla, indicating Fe-B pairing.  相似文献   

12.
The passage of heavy ions in a track detector polymeric material produces lattice deformations. These deformations may be in the form of latent tracks or may vanish by self annealing in time. Heavy ion irradiation produces modifications in polymers in their relevant electrical, chemical and optical properties in the form of rearrangement of bonding, cross-linking, chain scission, formation of carbon rich clusters and changes in dielectric properties etc. Modification depends on the ion, its energy and fluence and the polymeric material. In the present work, a study of the dielectric response of pristine and heavy ion irradiated Makrofol-KG polycarbonate is carried out. 40 μm thick Makrofol-KG polycarbonate films were irradiated to various fluences with Si8+ ions of 100 MeV energy from Pelletron at Inter University Accelerator Centre (IUAC), New Delhi and Ne6+ ions of 145 MeV from Variable Energy Cyclotron Centre, Kolkata. On irradiation with heavy ions dielectric constant (ɛ′) decreases with frequency where ɛ′ increases with fluence for both the ions. Variation of loss factor (tan δ) with frequency for pristine and irradiated with Si ions reveals that tan δ increases as the frequency increases. Tan δ also increases with fluence. While Ne irradiated samples tan δ shows slight variation with frequency as well as with fluence. Tan δ has positive values indicating the dominance of inductive behavior.   相似文献   

13.
This paper presents the thermoluminescence (TL) studies of ion-irradiated potassium–calcium mixed sulfate phosphor. The sample was prepared by the solid-state diffusion method. The X-ray diffraction study of the prepared sample suggests an orthorhombic structure with an average particle size of 0.16 μ m. The samples were irradiated with 1.2 MeV argon ions at fluences varying between 1011 and 1015 ions/cm2. The argon ions penetrate to a depth of 1.93 μ m and lose their energy mainly via electronic stopping. Due to ion irradiation, a large number of defects such as oxygen vacancies, radicals and color centers are formed in the sample. TL glow curves were recorded for each of the ion fluences. A linear increase in the intensity of TL glow peaks was found with an increase in the ion dose from 72 kGy to 720 MGy. The kinetic parameters associated with the prominent glow peaks were calculated using glow curve deconvolution, different glow curve shapes and sample heating rate methods.  相似文献   

14.
The silicon NPN rf power transistors were irradiated with different linear energy transfer (LET) ions such as 50?MeV Li3+, 80?MeV C6+ and 150?MeV Ag12+ ions in the dose range of 1–100?Mrad. The SRIM simulation was used to understand the energy loss and range of these ions in the transistor structure. The different electrical parameters such as Gummel characteristics, excess base current (ΔIB), DC current gain (hFE), displacement damage factor (K) and output characteristics were systematically studied before and after irradiation. The ion irradiation results were compared with 60Co-gamma irradiation result in the same dose range. A considerable increase in base current (IB) and a decrease in hFE and ICSat were observed after irradiation. The degradation in the electrical parameters was comparably very high for Ag12+ ion-irradiated transistor when compared to other ion-irradiated transistors, whereas the degradation in the electrical parameters for Li3+ and C6+ ion-irradiated transistors was comparable with gamma-irradiated transistor. The isochronal annealing study was conducted on the 100?Mrad irradiated transistors up to 500°C to analyze the recovery in different electrical parameters. The hFE and other electrical parameters of irradiated transistors were almost recovered after 500°C for 50?MeV Li3+, 80?MeV C6+ ion and 60Co-gamma-irradiated transistors, whereas for 150?MeV Ag12+ ion-irradiated transistor, the recovery in electrical characteristics is not complete.  相似文献   

15.
A. K. Nath  A. Kumar 《Ionics》2014,20(12):1711-1721
Swift heavy ion (SHI) irradiation has been used as a tool to enhance the electrochemical properties of ionic liquid-based nanocomposite polymer electrolytes dispersed with dedoped polyaniline (PAni) nanorods; 100 MeV Si9+ ions with four different fluences of 5?×?1010, 1?×?1011, 5?×?1011, and 1?×?1012 ions cm?2 have been used as SHI. XRD results depict that with increasing ion fluence, crystallinity decreases due to chain scission up to fluence of 5?×?1011 ions cm?2, and at higher fluence, crystallinity increases due to cross-linking of polymer chains. Ionic conductivity, electrochemical stability, and dielectric properties are enhanced with increasing ion fluence attaining maximum value at the fluence of 5?×?1011 ions cm?2 and subsequently decrease. Optimum ionic conductivity of 1.5?×?10?2 S cm?1 and electrochemical stability up to 6.3 V have been obtained at the fluence of 5?×?1011 ions cm?2. Ac conductivity studies show that ion conduction takes place through hopping of ions from one coordination site to the other. On SHI irradiation, amorphicity of the polymer matrix increases resulting in increased segmental motion which facilitates ion hopping leading to an increase in ionic conductivity. Thermogravimetric analysis (TGA) measurements show that SHI-irradiated nanocomposite polymer electrolytes are thermally stable up to 240–260 °C.  相似文献   

16.
Polyethylene terephthalate (PET) films were irradiated with 3 MeV proton beams at different fluences. The microhardness, electrical, thermal and structural studies were carried out using microhardness tester, LCR meter, thermogravimetric analysis (TGA) and FTIR spectroscopy. Vickers' hardness has been observed to increase with the fluence. The true bulk hardness of the film was obtained at loads greater than 400 mN. The AC electrical conductivity is practically unaffected by irradiation up to a frequency of 10 kHz, but it is found to increase exponentially at a frequency of 300 kHz. The loss factor and dielectric constant are observed to change appreciably with the fluence. It is observed that there is no significant change in the stability of the polymer up to the fluence of 1014 ions cm?2 as revealed by TGA and FTIR spectroscopy.  相似文献   

17.
Poly(ethylene-co-vinyl acetate) (EVA) films were irradiated with a 1.2 MeV electron beam at varied doses over the range 0–270 kGy in order to investigate the modifications induced in its optical, electrical and thermal properties. It was observed that optical band gap and activation energy of EVA films decreased upon electron irradiation, whereas the transition dipole moment, oscillator strength and number of carbon atoms per cluster were found to increase upon irradiation. Further, the dielectric constant, the dielectric loss, and the ac conductivity of EVA films were found to increase with an increase in the dose of electron radiation. The result further showed that the thermal stability of EVA film samples increased upon electron irradiation.  相似文献   

18.
The effect of an 8 MeV electron-beam on the structural, optical and dielectric properties of polystyrene films has been investigated respectively by means of Fourier transform infrared (FTIR) spectroscopy, ultraviolet–visible (UV–VIS) spectroscopy and electrical impedance (LCR) analysis over a radiation dose in the range of 50–250 kGy using a Microtron accelerator. The FTIR spectral analysis shows no change in the overall structure of the irradiated polystyrene films, except a minor change in the intensity of a few peaks in the FTIR spectrum, indicating that polystyrene is resistant to electron-beam irradiation over the range of radiation doses investigated. The optical band gap analysis using the UV–VIS absorption spectra of the polystyrene shows a small decrease in the optical band gap (E g) and the activation energy with an increase in electron doses. Further, the dielectric measurements over a frequency range of 100 Hz to 1 MHz for the electron-beam-irradiated polystyrene films show that both the dielectric constant and the dielectric loss increase with an increase in electron radiation dose, which may be ascribed to the formation of defect sites in the band gap of polystyrene as a consequence of molecular chain scission in the polymer films upon irradiation.  相似文献   

19.
Samples from the polymeric material Bayfol CR 1-4 have been exposed to 1 MeV protons with fluencies in the range 1011–1014 ions/cm 2. The resultant effect of proton irradiation on the thermal properties of Bayfol CR 1-4 has been investigated using thermo-gravimetric analysis (TGA). The onset temperature of decomposition T 0 and activation energy of thermal decomposition E a were calculated, results indicated that the Bayfol detector decomposes in one weight loss stage. In addition, the structural modifications in the proton-irradiated Bayfol samples have been studied as a function of fluence using X-ray diffraction and intrinsic viscosity of the liquid samples. Furthermore, the refractive index was measured for the non-irradiated and irradiated Bayfol samples. The results indicated that the degradation is the dominant mechanism in the fluence range 1×1011–5×1014 ions/cm 2. These results have been compared with those obtained in our previous work for Bayfol CR 6-2.  相似文献   

20.

Dielectric constant, dielectric loss and AC conductivity were measured, in the frequency range 100 Hz to 5 MHz in chlorinated poly (vinyl chloride) (CPVC) before and after exposure to gamma irradiation at doses between 5.0 KGy and 50.0 KGy. The frequency dependencies of ε′, ε″ and σAC at 30 °C were investigated. A relaxation peak in the dielectric loss and a corresponding step in the dielectric constant have been observed, in the frequency ranges 103 Hz to 104 Hz. The dielectric constant ε′, dielectric loss ε″ and AC conductivity σAC are also found to increase at heating up to 100 °C. In addition the effect of gamma irradiation on the frequency dependencies of ε′, ε″ and σAC was measured at room temperature. The gamma irradiation leads to an increase in the efficiency of soft segments. Furthermore, the DC electrical conductivity of both the irradiated and non-irradiated samples was investigated. The induced electrical conductivity and the activation energy were measured, at various temperatures, as a function of gamma dose. It was found that the gamma radiation has a definite effect on the DC conductivity of the CPVC polymer.  相似文献   

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