On the influence of reactive gases on sputtering and secondary ion emission

As a continuation of earlier sputtering yield measurements in an ion microprobe, the influence of oxygen and nitrogen on sputtering yield, ionisation efficiency and depth resolutions has been studied. For inert gas bombardment the yield of Ti and V falls sharply at a certain oxygen exposure. While this decrease in yield can be correlated with an increase in surface binding energy in the case of titanium, cone formation causes the yield to drop for oxygen exposed vanadium. In contrast, during nitrogen bombardment the only effect of oxygen exposure is a drastic increase of the ionisation efficiency; the sputtering yield or the depth resolution Δz/z is hardly influenced by oxygen coverage. As was observed earlier in the case of Cu?Ni layers, Δz is essentially constant for erosion depthsz?800 Å, thus yielding better resolution at large depths than is to beexpected from a sequential layer removal model. The extent of the transition zone Δz, is determined by surface topography and thus depends on the target composition as well as its structure.     

基于微陷阱结构的金属二次电子发射系数抑制研究

近年来,金属二次电子发射系数的抑制研究在加速器、大功率微波器件等领域得到了广泛关注.为评估表面形貌对抑制效果的影响,利用唯象概率模型计算方法对三角形沟槽、矩形沟槽、方孔及圆孔4种不同形状微陷阱结构的二次电子发射系数进行了研究,分析了微陷阱结构的形状、尺寸对二次电子发射系数抑制特性的影响规律.理论研究结果表明:陷阱结构的深宽比、孔隙率越大,则其二次电子发射系数抑制特性越明显;方孔形和圆孔形微陷阱结构的二次电子发射系数抑制效果优于三角形沟槽和矩形沟槽;具有大孔隙率的微陷阱结构表面的二次电子发射系数对入射角度的依赖显著弱于平滑表面.制备了具有不同表面形貌的金属样片并进行二次电子发射系数测试,所得实验规律与理论模拟规律符合较好.     

The influence of selective sputtering on surface composition

The time dependence of the surface composition of a one-phase, two-component homogeneous system is calculated assuming different sputter yields for the two components. It is shown for a special case that the amount of material which has to be removed before a steady state situation is obtained, is approximately one monolayer. Signals obtainable with different modern surface analytical methods under steady state conditions are discussed.     

The perturbation theory of diffraction effects in secondary electron emission on the crystal surface

An explicit expression, based on the Born approximation, has been obtained for the density distribution of ～1 keV primary electrons inside a single crystal. The crystal is considered as made up of atomic layers perpendicular to the crystal surface. The primary electron density at the center of each layer, integrated over the depth of emergency, is assumed to be responsible for effects of secondary electron emission. The azimuthai density dependencies calculated with allowance for all the diffracted waves demonstrates a strong localization at small azimuthai angles. This effect is treated to be of a waveguide nature.     

高入射能量下的金属二次电子发射模型

基于高入射能量电子产生二次电子发射的物理过程, 分别对高入射能量电子产生的真二次电子和背散射电子的概率进行理论分析与建模. 利用Bethe能量损失模型和内二次电子逸出概率分布, 推导出高入射能量电子产生有效真二次电子发射的系数与入射能量的关系式; 根据高入射能量电子在材料内部被吸收的规律, 推导出高入射能量电子产生背散射电子的系数与入射能量之间的关系式. 结合两者得到高入射能量下金属的二次电子发射模型. 利用该模型计算得到典型金属材料Au, Ag, Cu, Al的二次电子发射系数, 理论计算结果与采用Casino软件模拟金属内部散射过程得到的数值模拟结果相符. 关键词： 二次电子发射 高入射能量 金属表面 散射过程     

The influence of electron emission on probe characteristics

The influence of an electron emission of a spherical probe on its characteristic is calculated in a simplified model for the case of low plasma densities. Comparison of the calculations with measurements taken in helium and xenon show qualitative agreement.     

Theory of secondary electron emission

The fine structure in angle-resolved secondary electron spectra is shown to be related to the total reflectivity in low-energy electron diffraction (LEED). Theoretical results for tungsten are compared with experimental data. For non-normal emission, spin-orbit coupling is predicted to produce spin polarization of the emitted electrons.     

磁控溅射铂抑制镀银表面的二次电子发射

降低表面的二次电子产额是抑制微波部件二次电子倍增效应和提升功率阈值的有效途径之一,目前主要采用在表面构造陷阱结构和沉积非金属薄膜的方法降低二次电子产额,其缺点是会改变部件的电性能.针对此问题,采用在表面沉积高功函数且化学惰性的金属薄膜来降低二次电子产额.首先,采用磁控溅射方法在铝合金镀银样片表面沉积100 nm铂,测量结果显示沉积铂后样片的二次电子产额最大值由2.40降至1.77,降幅达26%.其次,用相关唯象模型对二次电子发射特性测量数据进行了拟合,获得了在40-1500 eV能量范围内能够准确描述样片二次电子产额特性的Vaughan模型参数,以及在0-50 eV能量范围内能够很好地拟合二次电子能谱曲线的Chung-Everhart模型参数.最后,将获得的实验数据和相关拟合参数用于Ku频段阻抗变换器的二次电子倍增效应功率阈值仿真研究,结果表明通过沉积铂可将部件的功率阈值由7500 W提升至36000 W,证实了所提方法的有效性.研究结果为金属材料二次电子发射特性的研究提供实验数据参考,对抑制大功率微波部件二次电子倍增效应具有参考价值.     

The diamond surface: II. Secondary electron emission

The total secondary electron emission spectrum from diamond has been examined, and details of the Auger spectra, characteristic loss spectra and K-level ionisation loss spectra have been presented. These features from the clean diamond surface were contrasted to those from graphite and amorphous-carbon. The fine structure in the carbon Auger spectra were compared with the line shape calculated using the band structure model, and the chemical sensitivity of the Auger spectra was demonstrated. A high energy Auger satellite peak in the diamond spectrum was ascribed to the Auger transition occurring from a doubly ionised carbon atom. This result was substantiated by the observation of loss peaks associated with the singly ionised level. The characteristic energy losses were assigned to interband transitions and plasma losses, and have been compared to optical data where possible.     

The influence of surface states on in-plane-gated structures

A model for in-plane-gated structures is proposed, taking into account surface currents and surface charges. The lateral band structures and barrier heights are calculated self-consistently for different bias voltages utilizing this new model. Accumulated negative surface charges lead to a strongly increased depletion length at the positively biased side of the lateral barriers. Most of the applied bias drops in this depleted region and does not affect the barrier height. We have found good agreement between these theoretical results and experimentally determined barrier heights and depletion lengths obtained from temperature-dependent current measurements and optical-beam-induced current measurements.     

Space-charge limitation of secondary electron emission

The paper deals with the calculation of the potential minimum due to the emission of true secondary electrons from a plane electrode. The results together with the corresponding limitation of the emission current are given in the form of graphs because an analytical solution of the problem is impossible.     

金属规则表面形貌影响二次电子产额的解析模型

表面形貌是影响二次电子发射特性的重要因素, 但目前仍缺乏刻画这一影响规律的解析模型. 本文通过分析发现表面结构的遮挡作用是影响二次电子发射特性的主要因素. 基于二次电子以余弦角分布出射的规律, 提出了建立表面形貌参数与二次电子产额之间定量关系的方法, 并以矩形槽和三角槽为例, 建立了电子正入射和斜入射时的一代二次电子产额的解析模型. 将推导的解析模型与Monte Carlo模拟结果和实验结果进行了比较, 结果表明本文建立的模型能够正确反映规则表面形貌的二次电子产额. 本文的模型对于反映常用规则结构影响二次电子出射的规律以及指导通过表面结构调控二次电子发射特性都具有参考价值.     

Characteristics of secondary electron emission from few layer graphene on silicon (111) surface

As a typical two-dimensional (2D) coating material, graphene has been utilized to effectively reduce secondary electron emission from the surface. Nevertheless, the microscopic mechanism and the dominant factor of secondary electron emission suppression remain controversial. Since traditional models rely on the data of experimental bulk properties which are scarcely appropriate to the 2D coating situation, this paper presents the first-principles-based numerical calculations of the electron interaction and emission process for monolayer and multilayer graphene on silicon (111) substrate. By using the anisotropic energy loss for the coating graphene, the electron transport process can be described more realistically. The real physical electron interactions, including the elastic scattering of electron—nucleus, inelastic scattering of the electron—extranuclear electron, and electron—phonon effect, are considered and calculated by using the Monte Carlo method. The energy level transition theory-based first-principles method and the full Penn algorithm are used to calculate the energy loss function during the inelastic scattering. Variations of the energy loss function and interface electron density differences for 1 to 4 layer graphene coating GoSi are calculated, and their inner electron distributions and secondary electron emissions are analyzed. Simulation results demonstrate that the dominant factor of the inhibiting of secondary electron yield (SEY) of GoSi is to induce the deeper electrons in the internal scattering process. In contrast, a low surface potential barrier due to the positive deviation of electron density difference at monolayer GoSi interface in turn weakens the suppression of secondary electron emission of the graphene layer. Only when the graphene layer number is 3, does the contribution of surface work function to the secondary electron emission suppression appear to be slightly positive.     

微米量级表面结构形貌特性对二次电子发射抑制的优化

抑制二次电子倍增效应是提高空间大功率微波器件和粒子加速器等设备性能的重要课题,而使用表面处理降低材料的二次电子发射系数是抑制二次电子倍增的有效手段.为优化寻找抑制效果最好的表面形貌,本文采用蒙特卡罗方法模拟了各种微米量级不同表面形貌的二次电子发射特性,研究占空比、深宽比、结构形状及排列方式等的影响.模拟结果表明,正方形、圆形、三角形凸起和凹陷结构的二次电子发射系数随占空比和深宽比的增大而减小,但存在饱和值;凸起结构的排列方式对二次电子发射系数的影响不大,但是凸起结构形状却对二次电子发射系数的影响较大,其中三角形的抑制效果最佳.对凹陷结构而言,不同形状的抑制效果差别不大;同时,占空比和深宽比相同时,凸起结构较凹陷结构抑制效果更佳.究其原因,核心在于垂直侧壁的“遮挡效应”,凹陷结构遮挡效应的大小与“陷阱”垂直高度有关,而凸起结构遮挡效应的大小和凸起部分的斜方向投影大小有关.     

The electronic structure of Rhodium: Angle-resolved studies of photoelectron and secondary electron emission

We report electron spectroscopic studies of the Rh(111) surface, with the aim to obtain bulk band-structure information. We have measured normal photoemision using tunable synchrotron radiation in the range of photon energies between 11 eV and 55 eV, and angle-dependent photoemission along the LUX and LKL azimuths using the He resonance lines (=21.2 eV, 40.8 eV). To complement these data, we studied angleresolved secondary electron emission after excitation with electrons and photons. We derive parts of the one-electron energy dispersionE(k) along L, and determine the energies of several bulk critical points (in eV):E(> ₇₊/₈₊)=–2.75±0.10,E(> ₈₊=–0.85±0.10,E(> _7–=16.1±0.5,E(> _6–/> _8–)=20.5±0.5,E(X ₇₊)=–5.0±0.1,E(L ₆₊)=–5.6±0.5,E(L ₆₊/L ₄₊₊₅₊)=–2.65±0.10,E(L ₆₊)=9.0±0.5 eV. Our results are compared to several available band structure calculations.     

基于二次电子发射的离子束剖面测量

介绍了利用二次电子发射测量束流强度分布的基本原理。针对能量为几十keV的低能离子束,制作了一个基于印刷线路板工艺的离子束剖面测量系统模型。模型采用宽度1.8 mm的金属条作为收集电极,相邻两条之间的间距为2 mm。利用电子回旋共振源对束流剖面测量系统进行了性能测试,考察了网栅电压对信号收集的影响以及系统的线性响应和成像特性。结果表明,探测器输出信号与束流强度之间具有较好的线性关系,系统能得到离子束的一维横向强度分布,位置分辨率2 mm。     

基于二次电子发射的离子束剖面测量

介绍了利用二次电子发射测量束流强度分布的基本原理。针对能量为几十keV的低能离子束,制作了一个基于印刷线路板工艺的离子束剖面测量系统模型。模型采用宽度1.8 mm的金属条作为收集电极,相邻两条之间的间距为2 mm。利用电子回旋共振源对束流剖面测量系统进行了性能测试,考察了网栅电压对信号收集的影响以及系统的线性响应和成像特性。结果表明,探测器输出信号与束流强度之间具有较好的线性关系,系统能得到离子束的一维横向强度分布,位置分辨率2 mm。     

Plasmonic secondary electron emission from alkali metals

One of the authors (Gornyi) has demonstrated earlier the possibility of plasmonic secondary electron emission (PSEE). Here electrons striking a solid substance excite in it plasmons, which then break up and in turn excite electrons. These electrons, upon being emitted into vacuum, form clusters of secondary electrons with definite energy levels. When energy-loss spectra of electrons are compared with energy spectra of secondary electrons and with work-function curves for secondary electrons, all of them plotted for lithium, sodium, and potassium, then the occurrence of the PSEE phenomenon in these metals can be established. The PSEE explains the peaks along the energy spectra and the work-function curves for secondary electrons. These peaks were not understood before.     

A comment on the effects of Cs on photon and secondary ion emission during sputtering

The effect of Cs on photon and negative ion emission is discussed for situations where the sputtered atom interacts either very weakly or very strongly with the target surface. The experimental data seem to favor the strong interaction case.