Defect production rates in electron irradiated aluminium

Abstract

The cross section for atomic displacement has been determined at 7.5°K by means of electrical resistivity measurements in electron irradiated aluminium up to transferred energies of 1100 eV. These data and those from the literature have been evaluated with respect to the displacement function (DF). Below 200 eV the DF could be derived from the data with sufficient accuracy by solving the integral equation which describes the displacement cross section. Above 200 eV a family of non-linear and linear DF's has been found which fits the data within the experimental error. From the linear DF's one obtains an average threshold energy of (62±6) eV according to Kinchin and Pease.     

Simulation of low energy displacement processes in a dilute cu-au alloy

Abstract

Research into displacement cascade processes in alloy systems has received little attention, yet is potentially of interest because issues such as the effect of solutes on the displacement threshold and the defect distribution and movement in cascades are important. As part of a wider study, we have initially considered the minor substitutional solute Au in a Cu matrix, and have used molecular dynamics to investigate the properties of point defects, the threshold displacement energy E_d, and temporal and spatial distribution of defects in low-energy (≤500 eV) displacement cascades. The results show that the influence of the solute on the properties of defects is important and that E_d is dramatically different from its form in pure copper. In comparison with pure copper, the recoil of the Au solute gives rise to a higher peak at longer times in the number of displaced atoms in the generation of a displacement cascade. The influence of this on defect density in the cascade and the final number and arrangement of defects has been investigated.     

Local icosahedral order and thermodynamics of simulated amorphous Fe

Local icosahedral order and thermodynamics of amorphous Fe have been analyzed in detail for models containing 3000 atoms, which were obtained by the molecular dynamics (MD) method. Models were obtained by cooling from the melt. Local order in models has been analyzed by using the technique proposed by Honeycutt and Andersen; we found an existence of icosahedral order in the system. Moreover, structural properties of models were also studied via radial distribution function (RDF), static structure factor, mean atomic distances, coordination number and bond-angle distributions. Glass transition temperature, heat capacity and potential energy of the system were found in addition to the evolution of structure and mean-squared displacement (MSD) of atoms upon cooling from the melt toward the glassy state. We found the glass transition temperature of simulated liquid Fe via temperature dependence of potential energy and it is close to that observed previously in the literature, i.e. T_g≈1070 K. Calculations showed that structural properties of amorphous Fe models with the Pak-Doyama interatomic potential agreed well with the experimental data.     

T+OD体系的同位素交换反应动力学

基于DTO(Χ¹ A₁)分子的多体展式分析势能函数,用准经典的Monte Carlo轨迹法研究了T+OD(0,0)体系的分子反应动力学过程. 结果表明,在碰撞能较低(小于121.34 kJ ·mol^-1)时,可以生成长寿命DTO(Χ¹ A₁)络合物,并且该络合反应是有阈能反应,这与用多体项展式理论计算的DTO分子势能曲线结果一致. 随碰撞能增加,逐渐出现置换产物DT和OT,最终分子被完全碰散成D,T和O原子,而且反应T+OD(0,0)→OT+D,T+OD(0,0)→DT+O和T+OD(0,0)→D+T+O也是有阈能反应. 由于D和T原子的同位素效应,T+OD(0,0)与D+OT(0,0)体系的碰撞反应特征存在非一致性. 关键词： DTO 分子反应动力学 轨线 反应截面     

The effect of HCP on the formation of twin boundaries and dislocations in Ni–Co alloys

In this study, molecular dynamics (MD) was used to simulate the rapid solidification process of Ni₄₇Co₅₃ and Ni₄₈Co₅₂ alloys at a cooling rate of 10¹² K/s. The effects of HCP on the formation of twin boundaries and dislocations in two Ni–Co alloys are studied. It is found that the difference of HCP clusters is the main effect that producing discrepancies on microstructure of two alloys. The number of HCP clusters accounted for 9.23% in Ni₄₇Co₅₃ alloy. They are regularly arranged to form the number of single-layer twin boundaries, and each twin boundary ends in a dislocation. The FCC and HCP structures coexist in the same atomic layers, which is easy to create dislocations. The relatively standard FCC crystal and only 0.32% HCP clusters are formed in Ni₄₈Co₅₂ alloy at 300 K. That small amount of HCP clusters are dispersed on the surface, and cause the formation of dislocation in the border with FCC clusters.     

Use of simulated infrared spectra to test N2-Ar pair potentials and dipole moment surfaces

Infrared spectra of the ¹⁴N₂-Ar van der Waals complex have been simulated by performing exact quantum mechanical calculations using two recent potential energy surfaces, one having a modified Morse-Morse-spline-van der Waals form and the other an exchange-Coulomb (XC) modelform. Frequencies and intensities have been calculated for some 10⁵ spectral transitions amongst the bound states of the complex, and simulations of the mid-infrared (2290-2370 cm^-1) spectrum of the complex at 77 K constructed from superpositions of lines, each of which has been assigned a Lorentzian lineshape with a linewidth appropriate to the experimental conditions. The roles of the various terms in the effective dipole moment surface proposed by Ayllon et al. (1990, Molecular Physics, 71, 1043) have also been examined, and a modification made which yields improved agreement with the experimental mid-infrared spectrum obtained by McKellar (1988, Journal of Chemical Physics, 88, 4190). Based upon the present calculations, the 48 most intense bands of the simulated spectrum of the ¹⁴N₂-Ar van der Waals complex have been given vibrational assignments. The spectrum simulated from the modified Morse-type potential surface, when employed together with the present modified dipole moment surface, shows distinctly better agreement with experiment than does the spectrum simulated from either the XC or the earlier empirical potential energy surface. Far-infrared spectra have also been simulated at 5 K and at 77 K using an appropriate effective dipole surface, and compared with the calculation of Ayllon et al.     

Single crystal diffraction with X-rays and neutrons: High quality at high pressure?

Abstract

Single crystal X-ray and neutron diffraction is essential for determining occupancies, positional as well as static and dynamic displacement parameters in crystalline matter by measuring Bragg, satellite or diffuse reflections. In our contribution a new low-temperature high pressure cell for neutron single crystal diffraction will be presented. It is designed to operate from a few K to ambient temperature in “orange” cryostats at pressures up to at least 3 GPa. We will present first neutron diffraction results obtained at E4/HMI Berlin and discuss the quality of the data and the significance of the results. A software package has been written (as a part of the PROMETHEUS system), which deals with the data reduction for both X-ray and neutron high pressure cell single crystal data. Likewise a data collection program has been developed for single crystal data collection on four-circle diffractometers using Merrill-Bassett cells. A series of single crystal experiments on H₂O and D₂O ice VI and KDP (KH₂PO₄) show that results of very high quality can be obtained routinely including even higher order terms in the atomic displacement parameters.     

Study of quantum effects on atomic displacements in quartz

The crystal structure of quartz (SiO₂) was analyzed by neutron powder diffraction at several temperatures in the range of 10-250 K. The temperature dependence of the structure parameters was consistent with our previous results obtained using single-crystal X-ray diffraction above room temperature. Atomic displacements are order parameters for displacive structural phase transitions. The temperature evolution of Si atomic displacement in quartz was analyzed by studying the quantum expansion of the Landau potential. The expansion was found to accurately describe the evolution of the atomic displacement over the entire temperature interval. To the best of our knowledge, such a verification of atomic displacement is the first of its kind. A proportional relationship between spontaneous strain and the square of the atomic displacement was observed over the entire temperature interval. The validity of the obtained characteristic temperature for the quantum effect is discussed and compared with the results of previous Raman-scattering studies.     

Anisotropy of Interfaces in an Ordered HCP Binary Alloy

A multiple-order-parameter mean-field theory of ordering on a binary hexagonal- close-packed (HCP) crystal structure is developed, and adapted to provide a continuum formulation that incorporates the underlying symmetries of the HCP crystal in both the bulk and gradient energy terms of the free energy. The work is an extension of the previous treatment by Braun et al. [Phil. Trans. Roy. Soc. Lond. A 355:1787 (1997)] of order–disorder transitions on a face-centered-cubic crystal (FCC) lattice. The theory is used to compute the orientation dependence of the structure and energy of interphase and antiphase boundaries in ordering to the Cd₃Mg and CdMg structures, which are the HCP analogs of Cu₃Au and CuAu structures in FCC. As in the corresponding FCC case, the multiple order parameters do not form a vector. Anisotropy is a natural consequence of the underlying crystal symmetries and the multiple-order-parameter continuum formation presented here. The isotropy transverse to the sixfold axis expected for a scalar order parameter is not found.     

Elastic Scattering of Two Photons by a Multicharged Atomic Ion

The elastic scattering of two X-ray photons by a multicharged atomic ion has been studied theoretically. A pronounced resonance structure and strong angular anisotropy of differential scattering cross section have been predicted in the energy range of a scattered photon from ?ω–I_1s to ?ω+I_1s (where is the energy of the incident photon and is the ionization energy threshold of the shell of the ion). The absolute value of the observed cross section has been quantitatively estimated.     

MeV Al+ and Al2+ ions implantation in Si(100): surface roughness and defects in the bulk

This paper deals with the implantation of high-energy (1.0–3.0 MeV) atomic and molecular Al⁺ ions in Si(100) to a fluence of 5×10¹⁴ Al atoms/cm² at room temperature. The molecular effect, i.e. the increase of the displacement yield compared with the sum of the atomic yields, and the damage formation as well as defect behaviour after annealing have been investigated. A detailed experimental study has been made of the evolution of extended secondary defects which form during thermal anneals of Al⁺ or Al₂ ⁺ irradiated silicon. The samples have been examined using combined Rutherford backscattering and channeling experiments together with transmission electron microscopy observations. The surface structure of the implanted wafers has been measured by atomic force microscopy. The results for the implantation-induced roughness at the Si surface, resulting from Al⁺ or Al₂ ⁺ irradiation at the same energy/atom, total atomic fluence, flux rate, and irradiation temperature, are presented and discussed. Received: 19 August 1999 / Accepted: 20 October 1999 / Published online: 23 February 2000     

Scanning tunnelling microscopy of charge-density waves in transition metal chalcogenides

We have used scanning tunnelling microscopes (STMs) operating at liquid helium and liquid nitrogen temperatures to image the charge-density waves (CDWs) in transition metal chalcogenides. The layer structure dichalcogenides TaSe₂, TaS₂, NbSe₂, VSe₂, TiSe₂ and TiS₂ have been studied including representative polytype phases such as 1T, 2H and 4Hb. Experimental results are presented for the complete range of CDW amplitudes and structures observed in these materials. In most cases both the CDW and the surface atomic structure have been simultaneously imaged. Results on the trichalcogenide NbSe₃ are also included.

The formation of the CDW along with the associated periodic lattice distortion gaps the Fermi surface (FS) and modifies the local density-of-states (LDOS) detected by the tunnelling process. The tunnelling microscopes have been operated mostly in the constant current mode which maps the LDOS at the position of the tunnelling tip. The relative amplitudes and profiles of the CDW superlattice and the atomic lattice have been measured and confirm on an atomic scale the CDW structures predicted by X-ray, electron and neutron diffraction. The absolute STM deflections are larger than expected for the CDW induced modifications of the LDOS above the surface and possible enhancement mechanisms are reviewed.

In the 2H trigonal prismatic coordination phases the CDWs involve a relatively small charge transfer and the atomic structure dominates the STM images. In the 1T octahedral coordination phases the charge transfer is large and the CDW structure dominates the STM image with an anomalously large enhancement of the STM profile. Systematic comparison of the STM profiles with band structure and FS information is included.

In the case of the 4Hb mixed coordination phases at the lowest temperatures two nearly independent CDWs form in alternate sandwiches. STM studies on 4Hb crystals with both octahedral and trigonal prismatic surface sandwiches have been carried out. The STM scans detect the relative strengths of the two CDWs as well as the interactions between the two types of CDW structure.

The STM scans are also able to detect defects and domain structure in the CDW image. Several examples will be given demonstrating the potential of the STM to detect these local variations in LDOS on an atomic scale. In contrast to the layer structure crystals the linear chain compound NbSe₃ shows a complex surface atomic structure as well as the formation of two CDWs. The surface atomic structure is resolved in the STM scans and profiles have detected the presence of the CDW modulation at 77K and 4.2K. These results demonstrate the feasibility of detecting CDW structure in the presence of complex atomic structure and using materials where dynamical CDW effects can also be studied by STM.

The range of STM results presented here show that the STM scans are extremely sensitive to the detail of the CDW structure and its effect on the LDOS. Although much of this structure has been deduced from diffraction studies, the ability to examine the CDW structure on an atomic scale with the STM is new. The sensitivity of the STM method suggests potential applications to a wide range of electronic structures in materials.     

Energy dependence of electron-induced radiation damage in tungsten

Abstract

The energy dependence of low dose damage production in commercial and high purity polycrystalline tungsten wires was studied near 350 K with 1.6 to 2.4 MeV electrons. From resistivity measurements at 291 K the threshold energy for the onset of observable damage was determined as 50 × 2 eV. An ‘effective’ threshold of 52 ±2 eV was also determined by directly fitting the energy dependence of the damage rates to theoretical displacement cross sections calculated from step-function displacement probabilities. A decrease of two orders of magnitude in impurity content reduced damage rates by about a factor of two but did not affect threshold. These results combined with current defect recovery models for tungsten, low temperature threshold data, and computer-calculated bcc damage theory suggest: (1) Observed damage consisted of equal concentrations of vacancies and impurity-trapped Stage I free interstitials. (2) Across Stage II (100 K to 600 K) onset threshold should be within 50 ±2 eV. (3) Minimum recoil energy required for free interstitial production near 0 K is 53 ± 5 eV. (4) Threshold has little dependence on crystal direction. An empirical method is presented for predicting threshold energies in the bcc transition metals by assuming the directional dependence of threshold is directly proportional to that of Young's modulus. By the use of one universal proportionality constant (1.2 × 10^?11 eV.cm²/dyne), thresholds for a number of metals and directions are calculated and shown to have significantly better agreement with experiment than the best available theoretical estimates.     

Isomerization of C3H3NO isomers: ab initio study

The structures and isomerization process of C₃H₃NO species have been explored at the MP2/6–311++G(d,p) level of theory of the ab initio method. Eleven minima and four interconversion transition states have been identified. The zero-point vibrational energy corrections were made to predict reliable energies. We predict a five-membered ring-like structure to be the lowest energy isomer, which is 177.73?kcal?mol^?1 more stable than the least stable isomer X found on the potential energy surface. The transition states and minima isomers were verified by frequency calculation. Intrinsic reaction coordinate (IRC) calculations have been performed to confirm that each transition state is linked by the desired reactants and products. The isomer stabilities have been studied using the relative energies, chemical hardness and chemical potential. The MHP principle could not predict the order of stability for C₃H₃NO isomers as arrived at with the relative energies. The role of intramolecular hydrogen bonds on the equilibrium structure has been discussed. The energy barrier and reaction enthalpy have been calculated during isomerization.     

Molecular alignment of biphenyl derivatives -a computational analysis

Molecular alignment of some biphenyl derivatives likes 4'-Nitro-2-biphenylamine (NBPA), 4-Acetyl-3'-chlorobiphenyl (ACBP) and 4-Acetyl-3'-florobiphenyl (AFBP) has been examined. The CNDO/2 method has been employed to compute the net atomic charge and atomic dipole-moment components at each atomic centre. Configurational energy has been computed using a modified Rayleigh- Schrodinger perturbation method at an interval of 0.1 A° in translation and 1° in rotation, and corresponding probabilities have been calculated using MB-statistics. A comparative study of molecular parameters like the total energy, the binding energy and the total dipole moment etc., has been made. On the basis of the stacking and the in-plane interaction energy calculations, all the possible geometrical arrangements between molecular pairing have been obtained. The investigation suggests that a strong intermolecular interaction energy between a pair of NBPA molecules, and the specific minimum energy configuration, determines the alignment of molecules with respect to one another. An attempt has been made to correlate the liquid crystalline properties exhibited by this class of molecules, and thereby develop a molecular model for the liquid crystallinity.     

Electronic structure and physical properties of bcc selenium under high pressure

Abstract

Here we report a theoretical calculation of the band structure and superconductivity of Se in the bcc phase. The energy band structure and the effect of pressure on the band structure is obtained by means of the Linear Muffin-Tin Orbital method within the atomic sphere approximation. The superconducting transition temperature (T_c) is calculated using McMillan's formula and we predict the value of T_c at 115.3 Gpa as 2.3 K. Further increase in presssure decreases the T_c values. The normal state electrical resistivity at 115.3 Gpa is 1.43 fl cm, with further increase in pressure the resistivity decreases, which is a typical behaviour of number of elemental metals under pressure.     

Semi-empirical determination of Kα1,2, Kβ1,3, and Kβ2,4 X-ray natural line widths for various elements between 29 ≤ Z ≤ 74 at 123.6 keV

Abstract

In this study, K_α1,2, K_β1,3, and K_β2,4 X-ray natural line widths for various elements were determined semi-empirically at 123.6?keV by using K shell fluorescence yields obtained from energy dispersive X-ray fluorescence measurements. The obtained results contribute to a database for the development of new theoretical models of atomic structure, radiation shielding materials, and designing new technological devices related to the structural analysis of materials. The obtained results were compared with the literature, while new fitting polynomials for the studied parameters were acquired. The results showed that the natural linewidths of K X-ray lines fit fourth-order polynomials except for K_β2,4.     

DTO分子反应碰撞的非对称性

基于DTO分子（X¹A₁）的氢同位素效应,得到修正的Born-Oppenheimer（B-O）理论下多体展式分析势能函数.用准经典的Monte-Carlo轨迹法研究了O+DT（0,0）的分子反应动力学过程.结果表明：在碰撞能量较低时（<209.2?kJ·mol^-1）,O+DT（0,0）可以生成长寿命络合物DTO（X¹A₁）,并且该络合反应是无阈能的,这一结论与多体项展式理论计算的DTO分子势能曲线结果一致.碰撞能大于209·2?kJ·mol^-1时,逐渐出现置换产物TO和DO,随碰撞能进一步增大,分子将被完全碰散成D,T,O原子.反应O+DT（0,0）→OD+T和O+DT（0,0）→OT+D是有阈能的反应,置换产物TO和DO轨线存在非对称性. 关键词： DTO 势能函数 分子反应碰撞 轨线非对称性     

EFFECT OF ATOMIC HYDROGEN ON THE ACETYLENE-ADSORBED Si(100)(2×1) SURFACE AT ROOM TEMPERATURE

High resolution electron energy loss spectroscopy, low energy electron diffraction and quadrupole maas spectrometer (QMS) have been employed to study the effect of atomic hydrogen on the acetylene-saturated pre-adsorbed Si(100)(2×1) surface and the surface phase transition at room temperature. It is evident that the atomic hydrogen has a strong effect on the adsorbed C₂H₂ and the underlying surface structure of Si. The experimental results show that CH and CH₂ radicals co-exist on the Si surface after the dosing of atomic hydrogen; meanwhile, the surface structure changes from Si(100)(2×1) to a dominant of (1×1). These results indicate that the atomic hydrogen can open C=C double bonds and change them into C-C single bonds, transfer the adsorbed C₂H₂ to C₂H_x(x = 3,4) and break the underlying Si-Si dimer, but it cannot break the C-C bond intensively. The QMS results show that some C₄ species axe formed during the dosing of atomic hydrogen. It may be the result of atomic hydrogen abstraction from C₂H_x which leads to carbon catenation between two adjacent C-C directs. The C₄ species formed are stable on Si(100) surfaces up to 1100 K, and can be regarded as the potential host of diamond nucleation.