A Particle‐in‐Cell Simulation of the Breakdown Mechanism in Microdischarges with an Improved Secondary Emission Model

In this paper, the failure of the breakdown voltage from the Paschen's law at extremely small electrode separations is studied. The electrical breakdown in microgaps occurs at the voltages far below the Paschen curve minimum breakdown limit and the modified Paschen curve should be used. Offered explanation for the departure from the Paschen's law at small gap spacings is based on the increasing of the yield of the secondary electrons. The high electric fields existing in small gaps may enhance the secondary electron yield and this would lead to a lowering of the breakdown voltage and to the departure from the Paschen's law. Particlein‐cell/Monte‐Carlo (PIC/MCC) simulations with a new secondary emission model have been performed to estimate the importance of this mechanism in the discharge breakdown. Obtained simulation results suggest that deviations from the Paschen curve across the micron and submicorn gap spacing can be attributed to the ion‐enhanced field emissions. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Inter‐Electrode Distance and Breakdown Voltage in Low Pressure Argon Discharges

This work deals with the Paschen law in electrical breakdown of gases at pd values around the Paschen minimum. From the Townsend model, it is possible to deduce theoretical forms of the coefficients in Paschen's law, of which our calculated values are in the range of the tabulated values from the literature. These formulae show that the breakdown voltage must be influenced by the inter‐electrode distance, while the product pd remains a key parameter. This is confirmed by the Paschen curves measured in an argon discharge for inter‐electrode distances varying from 2 to 9 cm (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Statistical Analysis of the Breakdown Voltage in Ne at 1 mbar Pressure

The results of the electrical breakdown investigation in neon at Paschen's minimum, using a dynamic method with applying surface law are presented in this paper. The investigations were performed for applied voltage increase rates from 0.1 to 300 V/s. Two hundred measurements were done for each of applied voltage increase rates, while the number of measurements was 1000 for establishing the breakdown voltage distributions. Using the Mann‐Whitney's test it was shown that the results appear randomly without any systematic error. A new form of breakdown voltage density distribution is suggested. Some of the V‐t characteristics are given and the validity of the surface law is con.rmed for the low pressure gas breakdown.     

Application of Mn nano-flower sculptured thin films produced on interdigitated pattern as cathode and anode electrodes in field ionization gas sensor

The photolitography method was used for producing interdigitated configurations for cathode and anode electrodes of a field ionization gas sensor in which Mn helical nano-flowers with 3-fold symmetry were deposited using oblique angle deposition together with rotation of the substrate about its surface normal, with each rotation divided into six sections. These sections were alternately rotated at high and low speeds. Three different distances were chosen in the design between anode and cathode electrodes, namely 40, 100 and 200 μm. Physical structure and morphology of electrodes were studied by field emission scanning electron microscope and atomic force microscope analyses.The breakdown voltage of the system was studied for nitrogen, oxygen, argon, air and carbon mono-oxide gases. Investigations with these gases at different distances between anode and cathode and different gas pressures confirmed Paschen's Law. Results showed that at low pressures, decreasing the gap between electrodes increases the breakdown voltage. With fewer gas molecules between the electrodes the number of interactions between particles is reduced and higher energies are required for ionization of gas molecules. At high pressures, the breakdown voltage is decreased because of an increased number of molecular interactions. The sensor demonstrated good selectivity between the different gases and selectivity was enhanced with increasing gas pressure. A direct relationship was found at low pressures (e.g., 0.1 mbar) between the breakdown voltage and the gas ionization energy while at high pressures (e.g., 1000 mbar) this relationship was reversed.     

One-dimensional breakdown voltage model of SOI RESURF lateral power device based on lateral linearly graded approximation

A novel one-dimensional(1D) analytical model is proposed for quantifying the breakdown voltage of a reduced surface field(RESURF) lateral power device fabricated on silicon on an insulator(SOI) substrate.We assume that the charges in the depletion region contribute to the lateral PN junctions along the diagonal of the area shared by the lateral and vertical depletion regions.Based on the assumption,the lateral PN junction behaves as a linearly graded junction,thus resulting in a reduced surface electric field and high breakdown voltage.Using the proposed model,the breakdown voltage as a function of device parameters is investigated and compared with the numerical simulation by the TCAD tools.The analytical results are shown to be in fair agreement with the numerical results.Finally,a new RESURF criterion is derived which offers a useful scheme to optimize the structure parameters.This simple 1D model provides a clear physical insight into the RESURF effect and a new explanation on the improvement in breakdown voltage in an SOI RESURF device.     

Modeling of a triple reduced surface field silicon-on-insulator lateral double-diffused metal–oxide–semiconductor field-effect transistor with low on-state resistance

An analytical model for a novel triple reduced surface field(RESURF) silicon-on-insulator(SOI) lateral doublediffused metal–oxide–semiconductor(LDMOS) field effect transistor with n-type top(N-top) layer, which can obtain a low on-state resistance, is proposed in this paper. The analytical model for surface potential and electric field distributions of the novel triple RESURF SOI LDMOS is presented by solving the two-dimensional(2D) Poisson's equation, which can also be applied to single, double and conventional triple RESURF SOI structures. The breakdown voltage(BV) is formulized to quantify the breakdown characteristic. Besides, the optimal integrated charge of N-top layer(Q_(ntop)) is derived, which can give guidance for doping the N-top layer. All the analytical results are well verified by numerical simulation results,showing the validity of the presented model. Hence, the proposed model can be a good tool for the device designers to provide accurate first-order design schemes and physical insights into the high voltage triple RESURF SOI device with N-top layer.     

孔缝腔体内多导体传输线的耦合响应

 为研究外部激励源对孔缝腔体内线缆的耦合响应问题,提出了基于矩量格林函数法（MoM-GF)和BLT方程的混合方法,这是一种半解析半数值的方法。MoM-GF法可以精确计算孔缝处的等效磁流,利用并矢格林函数可求得孔缝腔体内的电磁场分布;对于腔体内为双导线的情况,采用Taylor模型的BLT方程,给出了腔体内双导线终端的感应电压和感应电流的计算公式,求得导线上任意点的耦合响应。用计算机程序计算了孔缝腔体的屏蔽效能,验证了混合方法的准确性;并对孔缝腔体内双导线的耦合进行了数值计算。     

漂移区表面阶梯掺杂LDMOS的击穿电压模型

提出表面阶梯掺杂(SD：Step Doping on surface)LDMOS的二维击穿电压模型.基于求解多区二维Poisson方程,获得SD结构表面电场的解析式.借助此模型,研究其结构参数对击穿电压的影响;计算优化漂移区浓度和厚度与结构参数的关系,给出获得最大击穿电压的途径.数值结果,解析结果和试验结果符合较好.漂移区各区和衬底电场相互调制,在漂移区中部产生新的峰值,改善电场分布;高掺杂区位于表面,降低了正向导通电阻.结果表明：SD结构较常规结构击穿电压从192V提高到242V,导通电阻下降33%. 关键词： 阶梯掺杂 模型 优化 调制     

Free‐Electron Gas Spectrum Uniqueness in the Mixture of Noble Gases

Gas mixtures can reach the Maxwell's specter shape in case of low‐ionized mono‐atomic mixtures in the weak electric field. The parameters pertaining to the Maxwell spectrum of free electrons' gas straightforwardly settle on the insulating characteristics of the examined gas mixture at the fundamental level. In this paper, a condition for breakdown has been accomplished taking as a starting point the ionization coefficients derived accordingly, as well as the conditions for breakdown in keeping with the Townsend mechanism. The dc breakdown voltage value of noble gases mixture has been measured in the experimental part of the paper. The hypothesis that the free‐electron gas spectrum is unique in the noble gas mixture and is of Maxwell's type has been verified. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Performance and analytical modelling of halo-doped surrounding gate MOSFETs

Halo structure is added to sub-100 nm surrounding-gate metal-oxide-semiconductor fieldeffect-transistors （MOS- FETs） to suppress short channel effect. This paper develops the analytical surface potential and threshold voltage models based on the solution of Poisson＇s equation in fully depleted condition for symmetric halo-doped cylindrical surrounding gate MOSFETs. The performance of the halo-doped device is studied and the validity of the analytical models is verified by comparing the analytical results with the simulated data by three dimensional numerical device simulator Davinci. It shows that the halo doping profile exhibits better performance in suppressing threshold voltage roll-off and drain-induced barrier lowering, and increasing carrier transport efficiency. The derived analytical models are in good agreement with Davinci.     

Electrification of human body by walking

The process of electrification of the human body by walking on resistive floors has been analysed and the corresponding body potential measured. A model for electric body potential caused by walking has been proposed and then verified experimentally. The model combines two main processes: an exponential increase of potential due to successive charging and potential oscillations caused by periodic changes of body capacitance during walking. The conditions for initiation of Paschen's microdischarges running in the gaps between floor and soles of walker's footwear have been specified and a corresponding relation for minimum saturated body potential causing Paschen's discharges has been derived. This saturated critical potential has been found to be much higher than that usually attained by walking on common floors which explains why the Paschen discharges did not appear in such air gaps. On the other hand, the microdischarges developed between uncovered parts of the human body and grounded metallic objects have been found to be likely even with common floor and sole materials.     

Stochastic and Relaxation Processes in Argon by Measurements of Dynamic Breakdown Voltages

Statistically based measurements of breakdown voltages U _b and breakdown delay times td and their variations in transient regimes of establishment and relaxation of discharges are a convenient method to study stochastic processes of electrical breakdown of gases, as well as relaxation kinetics in afterglow. In this paper the measurements and statistical analysis of the dynamic breakdown voltages U _b for linearly rising (ramp) pulses in argon at 1.33 mbar and the rates of voltage rise k up to 800 V s ^–1 are presented. It was found that electrical breakdowns by linearly rising (ramp) pulses is an inhomogeneous Poisson process caused by primary and secondary ionization coefficients α , γ and electron yield Y variations on the voltage (time). The experimental breakdown voltage distributions were fitted by theoretical distributions by applying approximate analytical and numerical models. The afterglow kinetics in argon was studied based on the dependence of the initial electron yield on the relaxation time Y ₀ (τ ) derived from fitting of distributions. The space charge decay was explained by the surface recombination of nitrogen atoms present as impurities. The afterglow kinetics and the surface recombination coefficients on the gas tube and cathode were determined from a gas‐phase model. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Calculation of the minimum breakdown voltage of inert gases in static fields

Using the analytical expression for the maximum ionization coefficient of the inert gases η_max = 0.325 1/V_i (V_i is the ionization potential of the atom) a more precise expression is obtained for the minimum breakdown voltage of inert gases as a function of the γ-processes at the cathode: $$\left( {Us} \right)_{\min } = 3.08 V_i ln\left( {\frac{1}{\gamma } + 1} \right)$$ .     

Buckling analysis and smart control of SLGS using elastically coupled PVDF nanoplate based on the nonlocal Mindlin plate theory

This study presents an analytical approach for buckling analysis and smart control of a single layer graphene sheet (SLGS) using a coupled polyvinylidene fluoride (PVDF) nanoplate. The SLGS and PVDF nanoplate are considered to be coupled by an enclosing elastic medium which is simulated by the Pasternak foundation. The PVDF nanoplate is subjected to an applied voltage in the thickness direction which operates in control of critical load of the SLGS. In order to satisfy the Maxwell equation, electric potential distribution is assumed as a combination of a half-cosine and linear variation. The exact analysis is performed for the case when all four ends are simply supported and free electrical boundary condition. Adopting the nonlocal Mindlin plate theory, the governing equations are derived based on the energy method and Hamilton's principle. A detailed parametric study is conducted to elucidate the influences of the small scale coefficient, stiffness of the internal elastic medium, graphene length, mode number and external electric voltage on the buckling smart control of the SLGS. The results depict that the imposed external voltage is an effective controlling parameter for buckling of the SLGS. This study might be useful for the design and smart control of nano-devices.     

Analytical models of lateral power devices with arbitrary vertical doping profiles in the drift region

By solving the 2D Poisson's equation, analytical models are proposed to calculate the surface potential and electric field distributions of lateral power devices with arbitrary vertical doping profiles. The vertical and the lateral breakdown voltages are formulized to quantify the breakdown characteristic in completely-depleted and partially-depleted cases. A new reduced surface field (RESURF) criterion which can be used in various drift doping profiles is further derived for obtaining the optimal trade-off between the breakdown voltage and the on-resistance. Based on these models and the numerical simulation, the electric field modulation mechanism and the breakdown characteristics of lateral power devices are investigated in detail for the uniform, linear, Gaussian, and some discrete doping profiles along the vertical direction in the drift region. Then, the mentioned vertical doping profiles of these devices with the same geometric parameters are optimized, and the results show that the optimal breakdown voltages and the effective drift doping concentrations of these devices are identical, which are equal to those of the uniform-doped device, respectively. The analytical results of these proposed models are in good agreement with the numerical results and the previous experimental results, confirming the validity of the models presented here.     

Numerical and analytical investigations for the SOI LDMOS with alternated high-k dielectric and step doped silicon pillars

This paper presents a new silicon-on-insulator(SOI) lateral-double-diffused metal-oxide-semiconductor transistor(LDMOST) device with alternated high-k dielectric and step doped silicon pillars(HKSD device). Due to the modulation of step doping technology and high-k dielectric on the electric field and doped profile of each zone, the HKSD device shows a greater performance. The analytical models of the potential, electric field, optimal breakdown voltage, and optimal doped profile are derived. The analytical results and the simulated results are basically consistent, which confirms the proposed model suitable for the HKSD device. The potential and electric field modulation mechanism are investigated based on the simulation and analytical models. Furthermore, the influence of the parameters on the breakdown voltage(BV) and specific on-resistance(R_on,sp) are obtained. The results indicate that the HKSD device has a higher BV and lower R_on,sp compared to the SD device and HK device.     

PERFORMANCE CHARACTERISTICS OF SPARK CHAMBER AT PRESSURES LOWER THAN 1 ATM

The dependence of parallel plate spark chamber efficiency on pressure, gap widths and applied voltage has been studied in the pressure range 200—700 mm Hg of neon. The dependence of the threshold voltage on pressure, gap widths has also been studied in the same range. It is shown that the efficiency increases when the product of pressure P and gap with d and voltage increase, and the threshold voltage of the spark chamber follows Paschen's Law.     

Fabrication of gas ionization sensor based on titanium oxide nanotube arrays

Gas sensors have been fabricated based on field ionization from titanium oxide nanotubes grown on titanium foil. Ordered nanaotube arrays of titanium oxides were grown by the anodization method. We measured breakdown voltages and discharge currents of the device for various gases. Our gas ionization sensors (GIS) presented good sensitivity, selectivity, and short response time. The GISs based on TiO₂ nanotube arrays showed lower breakdown voltage, higher discharge current, and good selectivity. An excellent response observed for Ar compared to other gases. Besides, by introducing 2 % CO and 4 % H₂ to N₂ flow gas, the amount of breakdown voltage shifts about 20 and 70 volts to the lower values, respectively. The GIS works at room temperature and has the ability of detect inert gases with high stability and good linearity. Besides, short response time of about 1 second for the GISs based on TiO₂ nanotube arrays makes them excellent for gas sensing applications. Sharp edges of the nanotubes, through enhancing the applied electric field, reduce operating voltage to the reasonable values and power consumption.