Green luminescence and EPR studies on Mn-activated yttrium aluminum garnet phosphor

Yttrium aluminum garnet (Y₃Al₅O₁₂) and Mn activated Y₃Al₅O₁₂ phosphors have been prepared by urea combustion route in less than 5 min. The phosphors are well characterized by powder X-ray diffraction, Scanning electron microscopy and Fourier-transform infrared spectroscopic techniques. Photoluminescence tests on the pure Y₃Al₅O₁₂ showed a strong green emission at 525 nm (2.36 eV) attributed to the strongly allowed transition of F⁺ center whereas in Mn²⁺ activated YAG the green emission at 519 nm is due to the ⁴T₁ (G)→⁶A₁ (S) transition of Mn²⁺ ions. EPR studies have been carried out on Mn²⁺ activated Y₃Al₅O₁₂ phosphor at 300 and 110 K. From EPR spectra the spin-Hamiltonian parameters have been evaluated. The magnitude of the hyperfine splitting (A) indicates that the Mn²⁺ ions are in a moderately ionic environment. The spin concentration (N) and paramagnetic susceptibility (χ) have been evaluated and discussed.     

Luminescence of excitons in single-crystal garnets

Comparative studies of the luminescence of Y₃Al₅O₁₂:Ce and Lu₃Al₅O₁₂:Ce single-crystal films and their volume analogues—Y₃Al₅O₁₂ and Y₃Al₅O₁₂:Ce single crystals, excited by synchrotron radiation with energy E=120–150 eV, have been performed. The films were grown from melt-solution by liquid-phase epitaxy and the crystals were grown from melt. The single-crystal films and single crystals studied are characterized by different degrees of structural order, in particular, different concentrations of substitutional defects of the Y _Al ³⁺ and LU _Al ³⁺ types. It was ascertained that the bands at 260 and 250 nm in the intrinsic luminescence spectra of Y₃Al₅O₁₂:Ce and Lu₃Al₅O₁₂:Ce single-crystal films and single crystals are due to the emission of self-trapped excitons. The luminescence band with λ_max=300 nm and τ=0.36 μs, which is present in the luminescence spectrum of single crystals and absent in the spectra of single-crystal films, is due to the recombination of electrons with holes localized at Y _Al ³⁺ centers. It is shown that an efficient energy transfer by excitons to activator ions occurs in Y₃Al₅O₁₂ and Lu₃Al₅O₂ single-crystal films doped with Ce³⁺ ions.     

Mössbauer characteristics of glauconitisation

Using 50 MeV Li^3?+? ion irradiation, the change induced in polycrystalline ferrites Li_0.5(1?+?x)Ti _x Al_0.1Fe_2.4???1.5x O₄ (x = 0.0 to 0.3, step–0.1)[LTAF] and Li_0.5(1?+?x)Ti _x Cr_0.1Fe_2.4???1.5x O₄ (x = 0.0 to 0.3, step–0.1; LTCF) in the electronic stopping power regime is studied. Both the systems were irradiated with the same fluence of 5 × 10¹³ ions/cm². The modifications of the structural and magnetic properties are studied by means of X-ray diffraction (XRD), magnetization, ⁵⁷Fe Mössbauer spectroscopy and low field a. c. susceptibility. The contrast in the role of Ti^4?+? in the presence of Al^3?+? and Cr^3?+? causing the formation of paramagnetic centres through Swift Heavy Ion Irradiation (SHII) induced cation rearrangement has been revealed through the comparative Mössbauer signatures of both the systems. The hyperfine interaction parameters deduced through Mössbauer spectra are also discussed before and after irradiation. The observed reduction in the saturation magnetic moment and Curie temperature after irradiation supports the partial formation of paramagnetic centres and rearrangement of cations in the lattice.     

Damage induced in garnets by heavy ion irradiations: a study by optical spectroscopies

The damage induced by heavy-ion irradiation has been studied in yttrium iron garnet (Y₃Fe₅O₁₂ or YIG) films, doped with Ca, Tb and Tm, grown by liquid-phase epitaxy on gadolinium gallium garnet (Gd₃Ga₅O₁₂ or GGG) substrates. Irradiations of doped-YIG epitaxial films and GGG substrates with 36-MeV ¹⁸³W and 12-MeV ¹⁹⁷Au ions were applied for fluences between 1 × 10¹³ and 3 × 10¹⁵ cm^–2 near room temperature. The radiation damage was monitored by micro-Raman spectroscopy and UV–visible optical absorption spectroscopy. Raman spectra revealed that amorphisation was achieved in YIG for both ions, whereas a high lattice disorder was induced in GGG without reaching amorphisation for the Au ion irradiation. Raman spectra also showed that a major damage of the tetrahedral sites was induced in GGG, as previously found for YIG. It is concluded that with such ions reaching the stopping power threshold of track formation in YIG and GGG the observed rate of amorphisation may result from a combination of electronic and nuclear energy losses as calculated using the unified thermal spike model.     

Investigation of luminescence spectra of the Y<Subscript>3</Subscript>Al<Subscript>5</Subscript>O<Subscript>12</Subscript> and Y<Subscript>3</Subscript>Al<Subscript>5</Subscript>O<Subscript>12</Subscript>:Ce single-crystal films

The luminescence spectra of single-crystal films and bulk crystals of yttrium-aluminum garnet Y₃Al₅O₁₂ and Ce³⁺-activated Y₃Al₅O₁₂ were investigated. It was shown that the room-temperature luminescence intensity of the Ce³⁺-free single-crystal Y₃Al₅O₁₂ film was considerably lower than that of the bulk crystals, while the luminescence intensity of the Ce³⁺ ions in the Y₃Al₅O₁₂:Ce films was considerably higher than that one for the corresponding bulk crystal.     

化合物和合金中离子投影射程分布矩的计算(Ⅱ)——轻离子(Z1≤10)的射程分布矩

本文根据离子在固体材料中电子阻止截面的实验资料,给出了低能Li⁺,Be⁺,B⁺,C⁺,N⁺,O⁺,F⁺,Ne⁺等离子在固体中电子阻止截面S_e的经验公式。这些经验公式既能够很好地反映电子阻止本领的Z₁和Z₂振荡、又能正确地给出S_e随离子能量E的变化关系。用这种以实验为基础的S_e经验公式和符合于WHB势的核散射函数,计数了从H⁺到Ne⁺十种轻离子在非晶Al₂O₃,SiO₂,20/25/Nb不锈钢,LiNbO₃和UO₂等材料中的投影射程分布的一次至三次矩。将计算值与近几年的实验测量及其他人的计算结果进行了比较,在低能端,我们计算的平均投影射程R_p与实验符合得更好。 关键词：     

Scintillation properties of Er-doped Y3Al5O12 single crystals

Er-doped Y₃Al₅O₁₂ single crystals with different Er concentrations of 0.1, 1.0, 10, 30, and 50% were grown by the micro-pulling down method. There were several absorption lines due to the Er³⁺ 4f-4f transitions in the transmittance spectra and these lines correspond to the transitions from the ground state of ⁴I_15/2 to the excited states. The photo- and radio-luminescence spectra showed Er³⁺ 4f-4f emissions. Relative light yield under 5.5 MeV alpha-ray irradiation of Er 0.1%:Y₃Al₅O₁₂ was estimated to be 63% of that of Bi₄Ge₃O₁₂.     

Modeling Spectroscopic Properties of Ni2+ Ions in the Haldane Gap System Y2BaNiO5

Modeling of spin Hamiltonian parameters enables correlation of crystallographic, spectroscopic, and magnetic data for transition ions in crystals. In this paper, based on the crystallographic data and utilizing the point-charge model and superposition model, the crystal field parameters (CFPs) are estimated for Ni²⁺(3d ⁸) ions in the Haldane gap system Y₂BaNiO₅. The CFPs serve as input for the perturbation theory expressions and the crystal field analysis package for microscopic spin Hamiltonian modeling of the zero-field splitting parameters (ZFSPs) D and E. Results of an extensive literature search of the pertinent crystallographic data, experimental ZFSPs, and model parameters are briefly outlined. The modeling aims at verification of the experimental ‘single ion anisotropy’ parameters and explanation of the controversy concerning the maximal rhombic distortion |E/D| ≈1/3 reported for Ni²⁺ ions in Y₂BaNiO₅. The preliminary results call for reanalysis of some magnetic studies of the Haldane gap systems.     

Swift heavy ion induced photoluminescence studies in Aluminum oxide

Aluminum oxide, a promising material for high temperature applications, is synthesized by combustion route and characterized by X-ray diffraction technique. Photoluminescence of aluminum oxide bombarded with 120 MeV swift Au⁹⁺ ions have been studied at room temperature. The observed PL emission with peak at ～420 nm is attributed to F-center while the two more weak emissions with peaks at ～482 and ～525 nm are attributed to aggregates of F-centers. It is found that PL intensity increases with increase in Au⁹⁺ ion fluence up to ～1×10¹³ ions cm^?2 and thereafter it reaches saturation. The Fourier transform Infrared spectroscopy results show the destruction of Al?O?H bonds whereas the XRD results indicate the surface amorphization of Al₂O₃.     

Red,Yellow, Blue and Green Emission from Eu<Superscript>3+</Superscript>, Dy<Superscript>3+</Superscript> and Bi<Superscript>3+</Superscript> Doped Y<Subscript>2</Subscript>O<Subscript>3</Subscript>nano-Phosphors

Rare earth elements (RE = Eu³⁺& Dy³⁺)and Bi³⁺ doped Y₂O₃ nanoparticles were synthesized by urea hydrolysis method in ethylene glycol, which acts as reaction medium as well as a capping agent, at a low temperature of 140 °C,followed by calcination of the obtained product. Transmission electron microscope (TEM) images reveals that ovoid shaped Y₂O₃ nanoparticles of around 22–24 nm size range were obtained in this method. The respective RE and Bi³⁺ doped Y₂O₃ precursor nanoparticles when heated at 600 and 750 °C, retains the same shape as that of the as-synthesized Y₂O₃ precursor samples. From EDAX spectra, the incorporation of RE ions into the host has been studied. XRD pattern reveals the crystalline nature of the heated nanoparticles and indicate the absence of any impurity phase other than cubic Y₂O₃.However, the as-synthesized nanoparticles were highly amorphous without the presence of any sharp XRD peaks. Photoluminescence study suggests that the synthesized samples could be used as red (Eu³⁺), yellow (Dy³⁺), blue and green (Bi³⁺)emitting phosphors.     

Luminescence spectroscopy of excitons and antisite defects in Lu3Al5O12 single crystals and single-crystal films

The nature of the intrinsic luminescence of the lutetium aluminum garnet Lu₃Al₅O₁₂ (LuAG) has been analyzed on the basis of time-resolved spectral kinetic investigations upon excitation of two model objects, LuAG single crystals and single-crystal films, by pulsed X-ray and synchrotron radiations. Due to the differences in the mechanisms and methods of crystallization, these objects are characterized by significantly different concentrations of Lu_Al antisite defects. The energy structure of luminescence centers in LuAG single crystals (self-trapped excitons (STEs), excitons localized near antisite defects, and Lu_Al antisite defects) has been established. For single-crystal LuAG films, grown by liquid-phase epitaxy from a Pb-containing flux, the energy parameters of the following luminescence centers have been determined: STEs in regular (unperturbed by the presence of antisite defects) sites of the garnet lattice and excitons localized near Pb²⁺ ions. The structure of the luminescence centers, related to the background emission of impurity Pb²⁺ ions, has also been established in the UV and visible ranges. It is suggested that, in contrast to the two-halide hole self-trapping, a self-trapped state similar to STEs in simple oxides (Al₂O₃, Y₂O₃) is formed in LuAG; this state is formed by self-trapped holes in the form of singly charged O^? ions and electrons localized at excited levels of Lu³⁺ cations.     

Electronic stopping power calculation method for molecular dynamics simulations using local Firsov and free electron-gas models

Molecular dynamics simulations have proven to be accurate in predicting depth distributions of low-energy ions implanted in materials. Free parameters adjusted for every ion-target combination are conventionally used to obtain depth profiles in accordance with the experimental ones. We have previously developed a model for predicting depth profiles in crystalline Si without free parameters. The electronic stopping power was calculated using local total electron density. The model underestimated the stopping in the ?1 1 0? channeling direction. We have now taken a new approach to calculate the electronic stopping power. We use the local valence (3p²) electron density to account for the electronic energy loss between collisions and the Firsov model to account for the electronic energy loss during collision. The lowest electron densities are adjusted with a parametrization that is same for all ions in all implanting directions to correct the problems in the ?1 1 0? channeling direction.     

Effects of Kr and Xe ion irradiation on the structure of Y2O3 nanoprecipitates in YBCO thin film conductors

ABSTRACT

The response of Y₂O₃ nanoprecipitates in a 1-µm YBa₂Cu₃O_7-x layer from a superconducting wire Ag/YBCO/buffer metal oxides/Hastelloy to 107?MeV Kr and 167?MeV Xe ion irradiation was investigated using a combination of transmission electron microscopy, diffraction and X-ray energy-dispersive spectrometry. The direct observation of the radiation-induced tracks in Y₂O₃ nanocrystals is reported for the first time to the authors’ best knowledge. Structureless damaged regions of 5–9?nm (average 8?nm) in diameter were observed in Y₂O₃ nanocrystals when the electronic stopping power S_e was about or higher than 4.7 keV/nm. This value of S_e is the upper estimate of the minimum electronic stopping power to create damage in yttria nanocrystals. The electron diffraction patterns, high-resolution transmission electron microscopy, high-resolution scanning transmission electron microscopy, Fourier transform patterns from areas extending a few nanometres around the tracks show that yttria and YBCO keep their respective cubic and orthorhombic pristine structures.     

Observation of stimulated Raman scattering in Y3Al5O12 single crystals and nanocrystalline ceramics and in these materials activated with laser ions Nd3+ and Yb3+

High-order Raman parametric generation was excited in the visible and near-IR regions on the Stokes and anti-Stokes lines of Y₃Al₅O₁₂ single crystals and nanocrystalline ceramics. All generation components, as well as the χ⁽³⁾-active vibrational modes of these materials, were identified. In connection with the extensive use of the Nd³⁺-and Yb³⁺-doped Y₃Al₅O₁₂ crystals and, in recent years, nanocrystalline Y₃Al₅O₁₂: Nd³⁺ ceramics in laser physics and quantum electronics, the applied aspect of the observed nonlinear properties of these materials is outlined.     

Luminescence and scintillation properties of Y<Subscript>3</Subscript>A<Subscript>l5</Subscript>O<Subscript>12</Subscript>:Ce single crystals and single-crystal films

Luminescence and scintillation properties of Y₃A_l5O₁₂:Ce single crystals grown from the melt by the Czochralski and horizontal directed crystallization methods in various gas media and Y₃A_l5O₁₂:Ce single-crystal films grown by liquid-phase epitaxy from a melt solution based on a PbO-B₂O₃ flux have been comparatively analyzed. The strong dependence of scintillation properties of Y₃A_l5O₁₂:Ce single crystals on their growth conditions and concentrations of Y_Al antisite defects and vacancy defects has been established. Vacancy defects are involved in Ce³⁺ ion emission excitation as the centers of intrinsic UV luminescence and trapping centers. It has been shown that Y₃A_l5O₁₂:Ce single-crystal films are characterized by faster scintillation decay kinetics than single crystals and a lower content of slow components in Ce³⁺ ion luminescence decay during high-energy excitation due to the absence of Y_Al antisite defects in them and low concentration of vacancy defects. At the same time, the light yield of Y₃A_l5O₁₂:Ce single-crystal films is comparable to that of single crystals grown by directed crystallization due to the quenching effect of the Pb²⁺ ion impurity as a flux component and is slightly lower (∼25%) than the light yield of single crystals grown by the Czochralski method.     

Investigation of structural and optical properties of 100 MeV F7+ ion irradiated Ga10Se90-xAlx thin films

Present work focuses on the effect of swift heavy ion (SHI) irradiation of 100 MeV F⁷⁺ ions by varying the fluencies in the range of 1 × 10¹² to 1 × 10¹³ ions/cm² on the morphological, structural and optical properties of polycrystalline thin films of Ga₁₀Se_90-xAl_x (x = 0, 5). Thin films of ~300 nm thickness were deposited on cleaned Al₂O₃ substrates by thermal evaporation technique. X-ray diffraction pattern of investigated thin films shows the crystallite growth occurs in hexagonal phase structure for Ga₁₀Se₉₀ and tetragonal phase structure for Ga₁₀Se₈₅Al₅. The further structural analysis carried out by Raman spectroscopy and scanning electron microscopy verifies the defects or disorder of the investigated material increases after SHI irradiation. The optical parameters absorption coefficient (α), extinction coefficient (K), optical band gap (E_g) and Urbach’s energy (E_U) are determined from optical absorption spectra data measured from spectrophotometry in the wavelength range 200–1100 nm. It was found that the values of absorption coefficient and extinction coefficient increase while the value of optical band gap decreases with the increase in ion fluence. This post irradiation change in the optical parameters was interpreted in terms of bond distribution model.     

Effect of composition disorder on the electron paramagnetic resonance spectrum of the thermally populated excited state of Er<Superscript>3+</Superscript> ions in YLuAG mixed garnets

The results of investigation of electron paramagnetic resonance of Er³⁺ ions in the thermally populated first excited state in (Y_{1 − x} Lu _x )₃Al₅O₁₂ (YLuAG) mixed yttrium-lutetium garnet single crystals (0 ≤ x ≤ 1) are considered. In composition-disordered YLuAG, a number of new (as compared to Y₃Al₅O₁₂ (YAG)) Er³⁺ paramagnetic centers are detected; these centers appear due to a change in the crystal field symmetry and magnitude upon isomorphic substitution of Lu³⁺ for Y³⁺ in the yttrium sublattice of garnets. The origin of new paramagnetic centers is established and their formation probability is calculated.     

Morin transition in annealed iron implanted garnets

Y₃Fe₅O₁₂, Y₃Al₅O₁₂ and Gd₃Ga₅O₁₂ single crystal granets were implanted with 10¹⁷iron.cm⁻². Complementary techniques: CEMS, TEM and XRD at glancing angles have allowed to follow the behavior of implanted iron during thermal annealings. For Y₃Fe₅O₁₂ large α-Fe₂O₃ particles are formed after annealings and at 1200°C occurs a low temperature regime of the Morin transition at room temperature. For Y₃Al₅O₁₂, due to aluminium substitution in the precipitates, the Morin transition is only detected after an annealing at 1300°C whereas in Gd₃Ga₅O₁₂ no Morin transition is observed.     

Effect of lanthanum ions on magnetic properties of Y3Fe5O12 nanoparticles

Lanthanum ion (La³⁺)-substituted garnet nanoparticles Y_3?x La _x Fe₅O₁₂ (x = 0.0, 0.2, 0.4, 0.6, 0.8, and 1.0) were fabricated by a sol–gel method. Their crystalline structures and magnetic properties were investigated by using X-ray diffraction (XRD), vibrating sample magnetometer (VSM), and Mössbauer spectrum. The XRD results show that samples of Y_3?x La _x Fe₅O₁₂ (0.0 ≤ x ≤ 0.8) are all single phase and the sizes of particles range from 32 to 65 nm. Those of Y₂LaFe₅O₁₂ consisted of peaks from garnet and LaFeO₃ structures. Compared to pure YIG, the saturation magnetization is larger when the La concentration x = 0.2. However, with increasing La concentration (x), it decreases obviously. Meanwhile, may be due to the enhancement of the surface spin effects, the saturation magnetization rises as the particle size is increased. Different from the pure YIG, the Mössbauer spectra of Y_2.8La_0.2Fe₅O₁₂ and Y_2.2La_0.8Fe₅O₁₂ are composed of four sets of six-line hyperfine patterns. The results tell us that the substitution of La³⁺ ions with large ionic radius (1.061 Å) will give rise to a microscopic structure distortion of the a- and d-sites to different degrees, and the Zeeman sextets from a- and d-sites begin to split into two sub-sextets, which is helpful to explain the phenomenon observed in the study of the magnetic property.