The DX center and other tin-related defects in AlGaAs semiconductors

Al _x Ga_1-xAs semiconductors doped with both natural and enriched¹¹⁹Sn have been studied by Mössbauer spectroscopy (MS) to help to determine the atomic-scale nature of a deleterious, deep-level defect known as the DX center. Spectra have been acquired in the dark at 76 K and under sub-bandgap illumination at 4 or 10 K to distinguish the DX center from the substitutional shallow donor defect. Although electrical differences are clearly detected in these two states, no difference in the Mössbauer spectra are observed. Unexpected high Sn contents, determined by quantitative MS, demonstrate a large non-electrically active Sn fraction in some samples and this may be obscuring the observation of the DX center by both X-ray absorption spectroscopy and MS. Grinding the single-crystal layers into fine powders leads to an Sn defect that is attributed to a surface-oxidized site.     

Al_xGa_(1-x)As:Si中DX中心的双极化子机制及统计分析

基于极化子和双极化子的物理图像,采用无拟合参数的巨正则统计方法计算了Si掺杂的AlxGa1-xAs的导带载流子浓度,计算得到的理论结果从高温到低温都与实验结果定量一致.计算证实了AlxGa1-xAs:Si中的DX中心的基态DX-是电子-晶格相互作用产生的负电双极化子.处于热平衡状态时,施主Si在AlxGa1-xAs中除了电离状态,处于不同晶格构型的单、双极化子态共存,低温时双极化子态被冻结;光照下发生持续光电导时,双极化子态变成单极化子态同时向导带释放一个电子,此过程伴随着进一步的晶格弛豫.理论与实验的对照说明单电子局域的DX0态在热平衡时并不能稳定存在,这和提出的双极化子机制是完全一致的.     

Pressure-dependent studies of the DX centre in Si- and Sn-doped n+GaAs

Shubnikov-de Haas and persistent photoconductivity measurements are used to study the effect of hydrostatic pressure on the free electron concentration, mobility, and the occupancy of the DX centre in MBE grown n⁺GaAs heavily doped with either Si or Sn. The results show that the DX centre produces a resonant donor level between the Γ- and L- conduction band minima at a concentration comparable with the doping level. The position and occupancy of the DX centre are calculated using Fermi-Dirac statistics. For the Si-doped samples comparison with local vibrational mode measurements indicate that the DX level can be identified with Si_Ga.     

High pressure and deep donors (DX centers) in gaas and algaas

Abstract

The presented paper is a review of some interesting phenomena characteristic for the DX center — a metastable donor in GaAs and AlGaAs. We concentrate on a presentation of microscopic models of the DX centers and their consequences. We point out some controversies concerning the nature of this donor impurity and the profits resulting from the wide use of pressure methods in resolving these controversies.     

The measurement of cone length and range in etched plastics

Abstract

Group V impurities implanted at 400 keV into silicon have been detected in substitutional lattice positions by EPR. Three samples of VFZ, p-type 1200–1500 ohm-cm silicon from the same ingot were implanted with As⁷⁵, Sb¹²¹, and Sb¹²³, respectively. The EPR spectrum of each implanted substitutional impurity was observed after annealing the lattice damage. Only the isotope implanted in each sample was seen. Since only those donors which are electrically active can be observed, this technique measures the electrically active fraction of the implanted species. Upon annealing to 970°C, most of the antimony was active whereas only about 1/5 of the arsenic was observed. Comparisons with backscattering results indicate that between 350 and 600°C, ～95 per cent of the implanted antimony is substitutional but ～0 per cent is electrically active. The increase in electrical activity at 600°C is due to the rise of the Fermi level to the donor level as the residual lattice damage anneals. The paramagnetic damage centers observed were those also seen in oxygen-implanted silicon, Si-P3 and Si-Pl, but the Si-P3 center was not as well resolved and grows upon annealing to 200°C.     

Research on the defect structure and g factors for the tetragonal (CrO4)3− impurity center in ZrSiO4: Cr5+ crystal

ABSTRACT

The EPR g factors g// and g⊥ for the tetragonal (CrO₄)^3? impurity center in ZrSiO4: Cr⁵⁺ crystal are studied from the high-order perturbation formulas based on the two-mechanism (the crystal field and charge-transfer mechanisms) model. The studies indicate that differing from the tetragonally-elongated host (SiO4)^4- tetrahedron, the dominant defect structure of the substitutional (CrO₄)^3? tetrahedron is tetragonally- compressed with the ground state |d_z² due to the Jahn-Teller distortion. Furthermore, the agreement of g factors between calculation and experiment requires a small admixture of the first excited state |d_x²_?y² to the ground state |d_z² due to the vibrational motion of ligands, which leads a compressed (CrO₄)^3? tetrahedron to become a twinkling elongated one, These results are discussed.     

Bi-induced vibrational modes in GaAsBi

We have studied GaAs_1−xBi_x (up to x3%) using Raman scattering with two different polarization configurations. Two Bi-induced phonon modes are observed at 186 cm⁻¹ and 214 cm⁻¹ with increasing Raman intensity as the Bi concentration increases. By comparing Raman selection rules for the observed Bi-induced phonon modes with those for the substitutional N vibrational mode (GaN mode) in GaAsN, the phonon mode at 214 cm⁻¹ is identified as originating from substitutional Bi at the As site in GaAsBi.     

89Y NMR probe of Zn induced local magnetism in YBa2(Cu1-yZny) 3O6+x

We present detailed data and analysis of the effects of Zn substitution on the planar Cu site in YBa₂Cu₃O_6+x (YBCO_6+x) as evidenced from our ⁸⁹Y NMR measurements on oriented powders. For x << 1x \ll 1 we find additional NMR lines which are associated with the Zn substitution. From our data on the intensities and temperature dependence of the shift, width, and spin-lattice relaxation rate of these resonances, we conclude that the spinless Zn 3d ¹⁰ state induces local moments on the near-neighbour (nn) Cu atoms. Additionally, we conjecture that the local moments actually extend to the farther Cu atoms with the magnetization alternating in sign at subsequent nn sites. We show that this analysis is compatible with ESR data taken on dilute Gd doped (on the Y site) and on neutron scattering data reported recently on Zn substituted YBCO_{6 + x}. For optimally doped compounds ⁸⁹Y nn resonances are not detected, but a large T-dependent contribution to the ⁸⁹Y NMR linewidth is evidenced and is also attributed to the occurence of a weak induced local moment near the Zn. These results are compatible with macroscopic magnetic measurements performed on YBCO_{6 + x} samples prepared specifically in order to minimize the content of impurity phases. We find significant differences between the present results on the underdoped YBCO_{6 + x} samples and ²⁷Al NMR data taken on Al³⁺ substituted on the Cu site in optimally doped La₂CuO₄. Further experimental work is needed to clarify the detailed evolution of the impurity induced magnetism with hole content in the cuprates.     

DX centers in selectively Si-doped GaAs---AlAs superlattices

DX center has been characterized in four GaAs---AlAs superlattices grown by MBE at 580°C. The structures are uniformly Si-doped or selectively Si-doped in the AlAs layers or in the middle of the GaAs layers or on both sides of the interfaces. Deep level transient spectroscopy measurements (DLTS) put in evidence one dominant electron trap, with an activation energy for thermal emission of about 0.42eV for all the superlattices. This defect shows a thermally activated capture cross section and a large concentration except for the case where the only GaAs layers are doped. For the first time, a study of the capture reveals a capture activation energy of 0.36-0.37 eV, which allows us to locate the DX level nearly 60 meV below the conduction miniband. From these results, we show that the observed DX center is related to silicon in the AlAs layers. For the case when the AlAs barriers are not doped, the DX level is due to the Si diffusion from the middle of the wells towards the barriers, the Si atoms having diffused during the growth.     

Manganese centers with various valency in alkali halides

Abstract

Optical absorption bands and epr spectra of NaCl: Mn⁺⁺ X-irradiated at liquid nitrogen and room temperature are studied. Manganese epr spectra are divided into three classes, based on the value of hyperfme splitting constants. It is shown that the epr spectra with the hyperhe splitting constants of around 250 × 10-⁴, 80 × 10^?4 and 20 × 10^?4 cm^?1 are caused by Mn⁺, Mn⁺⁺ and Mn⁹, respectively. Formation of several manganese centers by X-irradiation is discussed. It is suggested that optical absorption bands at 410 and 440 nm are caused by Mn^O at the lattice site and that the Mn^O center which gives an epr spectrum with A = 15. 5 × 10^?4 cm^?1 is associated with a Mn⁰ center which is not at a substitutional site.     

Quadrupole and paramagnetic interactions of 27Al nuclei in mixed yttrium-dysprosium-aluminum garnets Y3−x DyxAl5O12

An ²⁷Al NMR study of mixed yttrium-dysprosium-aluminum garnets Y_3−x Dy _x Al₅O₁₂ is reported for x=0, 0.15, 0.50, 0.64, and 1.00. The quadrupole coupling parameters for the a and d aluminum sites have been determined. The spectra have been theoretically calculated with inclusion of the paramagnetic shift induced by Dy³⁺ ions. An analysis of the NMR line shape has permitted a conclusion that there is no substitutional order in the mixed crystals under study. Fiz. Tverd. Tela (St. Petersburg) 40, 1047–1051 (June 1998)     

Preferential interactions in the formamide/ tetrahydrofuran/dioxane system: a study by Raman spectroscopy

Significant changes observed in the Raman spectra of formamide (FA)–tetrahydrofuran (THF)–dioxane (DX) mixtures have been interpreted in terms of preferential interactions. The Gutmann's donor (DN) and acceptor (AN) number values of these solvents give a good interpretation for the differences observed. In the ternary system, THF behaves as a stronger base than DX and the band at ∼442 cm⁻¹, recently assigned to the FA–DX adduct is only observed at the highest FA concentration. Quantitative analyses performed at the C (FA) and C O (THF) stretching regions show that the extent of the association for the [FA]_n adduct is significantly larger than for the FA THF adduct. Electrostatic parameters, such as dipole moment and dielectric constant, are also regarded as a better interpretation of these associations. The good correlation between DN and electrostatic parameters indicates that the basic strength increases in the order DX < THF < FA. Copyright © 2008 John Wiley & Sons, Ltd.     

Resonant DX centers in highly doped Sn-Ga1−xAlxAs under hydrostatic pressure in magnetic field

We report experimental evidence of deep impurity states producing a localized resonance in the Γ_1c band continuum in highly doped Sn-Ga_1−xAl_xAs. At low temperatures and increasing pressure, electrons were transferred from the Γ_1c band to the deep Sn donor state; this transfer of carriers was directly related to the pressure dependence of Shubnikov de Haas oscillations. Persistent photoconductivity, due to the DX nature of this deep level, was observed through the increase in the Γ carrier density resulting from illumination with a light emitting diode. This is interpreted as a photoionization of the DX centers up to the Γ_1c valley.     

Locations of implanted 19F* atoms in Si,Ge and diamond studied through their nuclear quadrupole interactions

The Hartree-Fock cluster procedure was used to obtain the associated electronic distributions for ¹⁹F^* (I = 5/2, E ^x = 197 KeV excited nuclear state of the ¹⁹F atom) at possible sites in crystalline Si, Ge and diamond and to calculate nuclear quadrupole coupling constants v _Q and the asymmetry parameter η of the electric field gradient at the modelled sites. Lattice relaxation effects have been incorporated by employing a geometry optimization method to obtain minimum energy configurations for the clusters modelling each site. The intrabond (IB), antibonding (AB) and substitutional (S) sites in the bulk and the atop site on the surface were studied. From a comparison with v _Q and η values observed in time differential perturbed angular distribution (TDPAD) measurements we were able to identify the high frequency component in Si and Ge with ¹⁹F^* at the intrabond site. In diamond two high frequency components are observed. These are identified with ¹⁹F^* at intrabond and substitutional sites. For the low frequency site in Si and Ge the assignment is made to ¹⁹F^* implants at dangling bonds in the bulk resulting from implantation damage. In diamond none of the sites studied could provide lower frequency nuclear quadrupole parameters close to the observed ones. This revised version was published online in August 2006 with corrections to the Cover Date.     

Magnetic structure and transport properties of atomically disordered crystals of two-dimensional manganites La2−2x Sr1+2x Mn2O7

The magnetic structure and transport properties of partially disordered crystals of two-dimensional manganites La_2?2x Sr_1+2x Mn₂O₇ (x = 0.3, 0.4) are studied over a wide range of temperatures. The crystals are transformed into an atomically disordered state under irradiation with fast neutrons at a dose of 2 × 10¹⁹ cm^?2. The average concentration of substitutional defects in the crystal is ≈4%. It is found that substitutional defects are responsible for the transition of these manganites from the ferromagnetic metal state to the insulator state with a spin glass structure. The results obtained are discussed in terms of the ratio between the kinetic energy of charge carriers and the exchange energy of localized spins.     

Use of hydrostatic pressure in determining the nature of DX centers in GaAiAs-Si

Abstract

We report on activated capture and emission experiments obtained under hydrostatic pressure. The observed structures in the thermostimulated capture curves are interpreted as a competition between capture and emission from the different configurations of the DX center, which are related to the local environment of the Si atom. The analysis of the capture kinetic experiments supports the hypothesis of the negative charge state of the DX center.     

Spin correlations and magnetonuclear cross-correlation in Sm(Sr)-Mn-O perovskites in the low-temperature phase

The results of measurements of spin correlations and magnetonuclear cross-correlations (MNCCs) in the system ¹⁵⁴Sm_1−x Sr_xMnO₃ with the perovskite structure (x=0.25,0.4) in the low-temperature phase in magnetic fields 0<H<1 kOe are presented. These are the first measurements performed by the small-angle polarized-neutron scattering method (SAPNS). It is shown that ferromagnetic correlations with a scale of 180–250 Å and MNCCs characterizing the intercoupling of the magnetic and lattice subsystems on this scale exist in the system. It is found that in the low-temperature phase the system exhibits spin-glass properties. Pis’ma Zh. éksp. Teor. Fiz. 69, No. 4, 323–328 (25 February 1999)     

Impurity centers in a barium titanate ceramic doped with rare-earth ions

The ceramic BaTiO₃ doped with rare-earth ions Y, La, Nd, Sm, Lu, and Dy to 0.1–0.5 at. % was studied in the temperature range 160<T<480 K by ESR. Several ESR spectra were observed. The most intense spectra have g factors close to 5.5 and 1.96. The dependences of their intensity, g factor, and width on the concentration of rare-earth ions and temperature were studied. Analysis of the data obtained made it possible to determine the critical concentration of the rare-earth ions x _c =0.2–0.3 at. %. It is characterized by the fact that for x<x _c or x>x _c all rare-earth ions, except Lu, replace predominantly Ba⁴⁺ or Ti⁴⁺, respectively. Models of paramagnetic centers were established: Fe³⁺-V _O (g≈5.5) and Ti³⁺-Ln³⁺ (g≈1.96), where V _O is an oxygen vacancy and Ln is a rare-earth ion. An abrupt change in axial symmetry to cubic for a Fe₃₊-V _O center at a phase transition from the tetragonal into the cubic phase was observed for the first time. The role of new centers in the appearance of the posistor effect is discussed. Fiz. Tverd. Tela (St. Petersburg) 41, 1838–1842 (October 1999)     

Determination of the photoionization threshold of the deep donor in Al0.33Ga0.67As:Si

Photoionization of the DX center in Si-doped A1_0.33Ga_0.67As has been studied by means of photoconductivity. The optical cross-section _nd ⁰ shows a threshold at=200 meV and relative maxima (shoulders) around 400, 600, 950, and 1700 meV. The results throw doubt on the validity of the large lattice relaxation model, generally accepted for this class of centers. They can be well accounted for by the small relaxation model, recently proposed by the authors.     

Variations of ionic binding energies and the distribution of charge carriers in orthorhombic La2−x Sr x CuO4

The significance of heterovalent, substitutional disorder for the distribution of charge carriers in La_2−x Sr _x CuO₄ has been investigated. Disorder is shown to cause strong variations of binding energies of the ions ranging to some eV for Sr contentsx=0.1. Balancing the energy for a hole transport, Cu³⁺+O²⁻→Cu²⁺+O⁻, and taking binding energy variations into account, the process is realized to become possible without consuming energy for a subset Θ for allx Cu³⁺ in one formula unit of La_2−x Sr _x CuO₄. The functions Θ(x) are presented for hole transports to apex and in-plane oxygens, respectively. The delocalization of charge carriers is interpreted to be caused by valency disorder on metal lattice sites.