Effect of iodine doping on the photoconduction behaviour of pristine and high-energy heavy ion-irradiated kapton-H polyimide

The effect of iodine doping on the photoconduction behaviour of pristine and 75 MeV oxygen ion-irradiated (fluence: 3.12×10¹² ions/cm²) kapton-H polyimide film in the visible region has been investigated for different doping hours at various operating temperatures ranging 40–250°C and at different electric fields (40–400 kV/cm). The formation of charge transfer complexes in polymers effectively decreases the trapping sites by handling the charge carriers. A decrease in the photocurrent in ion-irradiated samples at higher exposure time for iodine vapours as compared with pristine samples has been associated with the enhancement in the trapping sites which may deplete the charge carriers and a loss in the photoactive groups owing to radiation-induced demerisation. The evidence of Frankel-type conduction (based on the estimation of Schottky coefficients) mechanism in irradiated samples is observed. A strong dependence of photocurrent on temperature in doped pristine and ion-irradiated samples reconfirms the thermal ionisation process of exciton for photogeneration of charge carriers.     

快重离子辐照聚酰亚胺潜径迹的电子能损效应

快重离子辐照聚合物材料时，由于密集电离激发在其路径上产生几纳米直径的潜径迹，径迹形貌受离子种类、离子能量等多种因素的影响.为了研究电子能损对径迹形成所起的作用，利用1.158GeV 的Fe⁵⁶离子和 1.755GeV Xe¹³⁶离子在室温真空环境下辐照叠层聚酰亚胺(PI)薄膜，结合傅里叶转换红外光谱(FTIR)分析技术对辐照引起的化学变化进行了测量.聚酰亚胺官能团的降解及炔基的生成是离子辐照聚合物的主要特征，在注量1×10¹¹到6×10¹²/cm²范围及较宽的电子能损(dE/dX)_e范围 (Fe⁵⁶ 离子：2.2 到 5.2 keV/nm， Xe¹³⁶ 离子：8.6 到 11.3 keV/nm)对官能团的断键率及炔基生成率进行了研究. 红外结果显示在实验涉及的能损范围都有炔基生成，应用径迹饱和模型对实验结果进行拟合，不同能损下的平均损伤径迹半径及炔基生成径迹半径被得到，通过热峰模型对实验结果拟合，给出了离子在聚酰亚胺中产生潜径迹的能损阈值，实验给出的径迹形貌的电子能损效应曲线与热峰模型预言走势基本一致. 关键词： 离子辐照 潜径迹 红外光谱 热峰模型     

Gamma irradiation of cholesteric products: Effect of the presence of organic solvents

The shift δT of the selective reflection temperature due to an exposure to γ-rays is studied for a mixture of cholesteric substances dissolved in various organic solvents. Values of δT such as 0.2°C per krad can be obtained. The influence of the solvent nature (carbon tetrachloride, chloroform, trichloroethylene, …) is also discussed. It is shown that the shift δT is due to the presence of radiolysis products of the solvent; this effect is more specially studied in the case of carbon tetrachloride containing a radical scavenger.     

Influence of irradiation on the thermal decomposition of lithium perchlorate

Abstract

Infrared absorption measurements were made before and after 90 °K electron irradiations of silicon samples which contained either dispersed oxygen, carbon, or carbon plus oxygen. Irradiation-produced absorption bands associated with two distinctly different defects are observed depending on the oxygen and carbon content of the silicon. One center is the well-known vacancy-oxygen A-center defect (836-cm^?1 band) and is formed on irradiation in oxygen-containing silicon with a magnitude which is independent of the carbon content. Measurements have correlated the formation of one A-center with the loss of one interstitial oxygen atom, thereby indicating that A-center formation occurs by vacancy trapping at interstitial oxygen atoms. A second center (922-and 932-cm^?1 bands) is formed only in silicon crystals which contain both oxygen and carbon. The results indicate that this center is formed by the trapping of a silicon interstitial at a carbon-oxygen complex.     

Evolution of ion-irradiated point defect concentration by cluster dynamics simulation

The relationship between ions irradiation and the induced microstructures(point defects, dislocations, clusters, etc.)could be better analyzed and explained by simulation. The mean field rate theory and cluster dynamics are used to simulate the effect of implanted Fe on the point defects concentration quantitatively. It is found that the depth distribution of point defect concentration is relatively gentle than that of damage calculated by SRIM software. Specifically, the damage rate and point defect concentration increase by 1.5 times and 0.6 times from depth of 120 nm to 825 nm, respectively. With the consideration of implanted Fe ions, which effectively act as interstitial atoms at the depth of high ion implantation rate, the vacancy concentration C_v decreases significantly after reaching the peak value, while the interstitial atom concentration C_i increases significantly after decline of the previous stage. At the peak depth of ion implantation, C_v dropped by 86%, and C_i increased by 6.2 times. Therefore, the implanted ions should be considered into the point defects concentration under high dose of heavy ion irradiation, which may help predict the concentration distribution of defect clusters, further analyzing the evolution behavior of solute precipitation.     

Effect of dose on irradiation-induced loop density and Burgers vector in ion-irradiated ferritic/martensitic steel HT9

Samples of F/M steel HT9 were irradiated to 20?dpa at 420°C, 440°C and 470°C in a transmission electron microscope with 1?MeV Kr ions so that the microstructure evolution could be followed in situ and characterised as a function of dose. Dynamic observations of irradiation-induced defect formation and evolution were made at the different temperatures. Irradiation-induced loops were characterised in terms of their Burgers vector, size and density as a function of dose and similar observations and trends were found at the three temperatures: (i) both a/2 <111> and a <100> loops are observed; (ii) in the early stage of irradiation, the density of irradiation-induced loops increases with dose (0–4?dpa) and then decreases at higher doses (above 4?dpa), (iii) the dislocation line density shows an inverse trend to the loop density with increasing dose: in the early stages of irradiation, the pre-existing dislocation lines are lost by climb to the surfaces while at higher doses (above 4?dpa), the build-up of new dislocation networks is observed along with the loss of the radiation-induced dislocation loops to dislocation networks; (iv) at higher doses, the decrease of number of loops affects more the a/2 <111> loop population; the possible loss mechanisms of the a/2 <111> loops are discussed. Also, the ratio of a <100> to a/2 <111> loops is found to be similar to cases of bulk irradiation of the same alloy using 5?MeV Fe²⁺ ions to similar doses of 20?dpa at similar temperatures.     

Field-induced insulator-metal-insulator transitions in low-energy H2- ion-irradiated epitaxial La2/3Cal/3MnO3 thin films

Epitaxial La2/3Cal/3MnO3 thin films grown on LaA103 （001） substrates were irradiated with low-energy 120-keV H＋ ions over doses ranging from 1012 ions/cm2 to 1017 ions/cm2. The irradiation suppresses the intrinsic insulator-metal （I-M） transition temperature and increases the resistance by reducing the crystallographic symmetry of the films. No irradiation-induced columnar defects were observed in any of the samples. The specific film irradiated at a critical dose around 8 x 1015 ions/cm2 is in a threshold state of the electric insulator where the I-M transition is absent. In an external field of 4 T or higher, the I-M transition is restored and thus an enormous magnetoresistance is observed, while a negative temperature coefficient resumes as the temperature is reduced further. Magnetic relaxation behavior is confirmed in this and other heavily irradiated samples. The results are interpreted in terms of the displacement of oxygen atoms provoked by ion irradiation and the resulting magnetic glassy state, which can be driven into a phase coexistence of metallic ferromagnetic droplets and the insulating glass matrix in a magnetic field.     

Effect of MeV electron irradiation on the free volume of polyimide

The free volume of the microvoids in the polyimide samples, irradiated with 6 MeV electrons, was measured by the positron annihilation technique. The free volume initially decreased the virgin value from ～13.70 to ～10.98 Å³ and then increased to ～18.11 Å³ with increasing the electron fluence, over the range of 5?×?10¹⁴ – 5?×?10¹⁵ e/cm². The evolution of gaseous species from the polyimide during electron irradiation was confirmed by the residual gas analysis technique. The polyimide samples irradiated with 6 MeV electrons in AgNO₃ solution were studied with the Rutherford back scattering technique. The diffusion of silver in these polyimide samples was observed for fluences >2?×?10¹⁵ e/cm², at which microvoids of size ≥3 Å are produced. Silver atoms did not diffuse in the polyimide samples, which were first irradiated with electrons and then immersed in AgNO₃ solution. These results indicate that during electron irradiation, the microvoids with size ≥3 Å were retained in the surface region through which silver atoms of size ～2.88 Å could diffuse into the polyimide. The average depth of diffusion of silver atoms in the polyimide was ～2.5 μm.     

Hillock formation on ion-irradiated graphite surfaces

Abstract

Scanning probe microscopy experiments show that ion irradiation of (0001) graphite results in the formation of isolated defects comprising of a few tens of atoms. We use molecular dynamics simulations and density-functional theory calculations to study the formation probabilities of these defects. We identify different defect structures which correspond to experimentally observed hillocks on graphite surfaces. We find that the predominant source of defects are vacancies and interlayer interstitials, and identify a three-atom carbon ring defect on the graphite surface.     

Field-induced insulator-metal-insulator transitions in low-energy H_2~+ ion-irradiated epitaxial La_(2/3)Ca_(1/3)MnO_3 thin films

Epitaxial La 2/3 Ca 1/3 MnO 3 thin films grown on LaAlO 3 (001) substrates were irradiated with low-energy 120-keV H 2 + ions over doses ranging from 10 12 ions/cm 2 to 10 17 ions/cm 2 . The irradiation suppresses the intrinsic insulator-metal (I-M) transition temperature and increases the resistance by reducing the crystallographic symmetry of the films. No irradiation-induced columnar defects were observed in any of the samples. The specific film irradiated at a critical dose around 8 × 10 15 ions/cm 2 is in a threshold state of the electric insulator where the I-M transition is absent. In an external field of 4 T or higher, the I-M transition is restored and thus an enormous magnetoresistance is observed, while a negative temperature coefficient resumes as the temperature is reduced further. Magnetic relaxation behavior is confirmed in this and other heavily irradiated samples. The results are interpreted in terms of the displacement of oxygen atoms provoked by ion irradiation and the resulting magnetic glassy state, which can be driven into a phase coexistence of metallic ferromagnetic droplets and the insulating glass matrix in a magnetic field.     

Damage production and annealing in ion-irradiated FCC metals

Abstract

Damage production, radiation annealing and stage I recovery in some FCC metals irradiated with ～ 1 MeV and ～ 100 MeV ions near 10 K are studied using electrical resistivity measurements. For ～ 1 MeV light and heavy ion irradiations, the fraction of stage I recovery and the damage efficiency decrease with the PKA median energy. For ～ 100 MeV heavy ion irradiations, an anomalous reduction of stage I recovery and a large cross-section for subthreshold recombination are found in Ni, and an enhancement of the damage efficiency is found in Cu; they are interpreted as due to the electron excitation by irradiating ions and the subsequent energy transfer from excited electrons to lattice atoms. Simultaneous differential equations describing the production and radiation annealing of two or more types of defects are solved, where the respective defect concentration is expressed as a function of fluence.     

Effect of electrode material on sealing wax thermo-electret charge

Thermo-electrets of sealing wax have been prepared using different metal electrodes: tin, aluminium, nickel, copper, lead and zinc (Series A) and pairs of metallic — tin and non-metallicmica (Series B) keeping other preparative parameters to be the same in each series. Surface charge has been measured on anode side of each thermo-electret. Surface charge characteristics have been discussed in the light of the results obtained in earlier studies on sealing wax thermo-electrets by the authors and existing views on the origin of charges. These results suggest that origin of homocharge in thermo-electrets is due to injection of charge carriers supplied by the electrodes into the dielectric surface and freezing in near the surface and getting trapped in the surface levels. The origin of heterocharge is due to inhomogeneous distribution of charge carriers originating in the bulk on account of their trapping.     

激光辐照环境对金属材料反射特性的影响

利用积分球绝对测量法,对在20 Pa真空缺氧、1 000 Pa空气,105 Pa空气及1 000 Pa氧气环境下,1 064 nm波长连续激光辐照30CrMnSiA碳钢材料过程中的反射光信号进行了测量,得到了30CrMnSiA碳钢在4种辐照环境下的反射率和温度变化曲线。结果表明：在空气组分辐照环境的低压到105 Pa范围内,材料初始反射率随压力增大而增大;在缺氧和富氧环境的激光辐照过程中,缺氧环境下材料反射率变化缓慢,且变化拐点温度高于富氧环境,富氧环境下材料被加热后的快速氧化反应有利于材料对激光能量的吸收;不同辐照环境（缺氧和富氧）相同材料温度条件下,材料反射率并不相同。     

激光辐照环境对金属材料反射特性的影响

 利用积分球绝对测量法,对在20 Pa真空缺氧、1 000 Pa空气,10⁵ Pa空气及1 000 Pa氧气环境下,1 064 nm波长连续激光辐照30CrMnSiA碳钢材料过程中的反射光信号进行了测量,得到了30CrMnSiA碳钢在4种辐照环境下的反射率和温度变化曲线。结果表明：在空气组分辐照环境的低压到10⁵ Pa范围内,材料初始反射率随压力增大而增大;在缺氧和富氧环境的激光辐照过程中,缺氧环境下材料反射率变化缓慢,且变化拐点温度高于富氧环境,富氧环境下材料被加热后的快速氧化反应有利于材料对激光能量的吸收;不同辐照环境（缺氧和富氧）相同材料温度条件下,材料反射率并不相同。     

Zr掺杂形式对钨电子发射材料组织性能的影响

采用中频感应加热烧结方法制备了W-1.5%La₂O₃-0.1%Y₂O₃-0.1%ZrO₂和W-1.5%La₂O₃-0.1%Y₂O₃-0.08%ZrH₂电子发射材料,烧结样品的致密度约为95.5%。热电子发射测试结果表明,添加氢化锆的热电子发射材料样品的零场发射电流密度大于添加氧化锆的样品,分析认为是添加的氢化锆在烧结时,发生分解,生成活性的Zr可以捕获钨晶界中的杂质氧,净化晶界,从而提高了电子发射;维氏显微硬度表明添加氢化锆样品的硬度高于添加氧化锆的样品,分析表明是氢化锆的添加有效改善了钨晶粒之间的结合性,提升了钨电子发射材料的硬度。利用SEM,EDS,XRD、金相显微镜等表面分析设备对样品进行了表征,样品结构显示添加氢化锆与添加氧化锆相比,不仅钨晶粒尺寸由13.63 μm降至11.63 μm,而且稀土相尺寸由1.87 μm降至1.66 μm,这种组织结构的变化有利于电子发射。     

Effects of proton and electron irradiation on the structural and tribological properties of MoS2/polyimide

To study the structural and tribological properties of MoS₂/polyimide (MoS₂/PI) composite under the irradiation environment of proton and electron, the MoS₂/PI composites were investigated in a ground-based simulation facility, in which the energy of proton and electron was 25 keV and the flux was 2.5 × 10¹⁴ cm⁻² s⁻¹. The experimental results revealed that the simplex and combined irradiation of proton and electron induced bond break and cross-link, proton irradiation can break the PI bond easier than electron irradiation and then formed the graphite-like structure at surface area of the samples. Irradiation decreased the friction coefficient and wear rate remarkably of the composites comparing with the pristine one. The wear rate increased with the increasing of the proton and combined radiation time, and decreased with the electron radiation conditions.     

锂离子电池Sn-Al薄膜电极的制备及电化学性能研究

采用磁控溅射沉积技术制备了纳米级Sn-Al合金薄膜电极材料,并用X射线衍射和扫描电子显微镜进行表征,用高精度电池测试系统进行充放电和循环伏安测试.结果表明直流DC与射频RF两种不同的溅射方法制备的Sn-Al薄膜电极具有很大的性能差异,前者DC法制备的材料颗粒细小,表现出稳定的循环性能,其首次放电容量为1060 mAh/g,首次效率为71.7％,电极经过50次循环后比容量保持在700 mAh/g以上.后者RF法制备的材料颗粒较大,放电比容量开始上升,第五次循环后接着逐渐衰减,表现出较差的循环性能. 关键词： 锂离子电池 磁控溅射 Sn-Al合金 电化学性能     

离子辐照对磷烯热导率的影响及其机制分析

通过离子辐照产生缺陷,可以非常有效地调控磷烯诸多物理性质.本文应用分子动力学方法模拟离子辐照磷烯的过程,给出了缺陷的形成概率与入射离子能量、离子种类以及离子入射角度之间的关系,并且应用非平衡态分子动力学计算辐照后磷烯热导率的变化.以缺陷形成概率为切入点,系统地研究了辐照离子的能量、辐照剂量、离子的种类以及离子的入射角度对磷烯热导率的影响.应用晶格动力学方法研究了空位缺陷对磷烯声子参与率的影响,并计算了声子局域模式的空间分布.基于量子微扰和键弛豫理论,指出空位缺陷明显降低磷烯热导率的最重要物理机制是空位缺陷附近的低配位原子对声子强烈散射.本文研究可为缺陷工程调控磷烯的热输运性质提供理论参考.