First-principles investigation of the intrinsic defects in Ti3SiC2

First-principles calculations have been carried out to investigate intrinsic defects including vacancies, interstitials, antisite defects, Frenkel and Schottky defects in the 312 MAX phase Ti₃SiC₂. The formation energies of defects are obtained according to the elemental chemical potentials which are determined by the phase stability conditions. The most stable self-interstitials are all found in the hexahedral position surrounded by two Ti(2) and three Si atoms. For the entire elemental chemical potential range considered, our results demonstrated that Si and C related defects, including vacancies, interstitials and Frenkel defects are the most dominant defects. Besides, the present calculations also reveal that the formation energies of C and Si Frenkel defects are much lower than those of all Schottky defects considered. In addition, the calculated profiles of densities of states for the defective Ti₃SiC₂ indicate that these defects should have great influence on its thermal and electrical properties.     

First-principles calculations of the electronic structure of fluorite-type crystals (CaF2, BaF2, SrF2, and PbF2) containing Frenkel defects. Analysis of optical and transport properties

The electronic structure of the alkali-earth fluorides CaF₂, BaF₂, SrF₂, and PbF₂ with Frenkel defects is investigated in the tight-binding approximation by the LMTO method. The defect formation and migration energies are calculated. The electronic structure and optical excitations of a H center in a defective fluorite structure are examined. It is shown on the basis of calculations of the binding energies that CaF₂, BaF₂, and SrF₂ are ionic compounds, while the chemical bond in PbF₂ is partially covalent. Possible methods of displacement of interstitial fluorine atoms that lead to the observed optical spectra of an H center are investigated. Fiz. Tverd. Tela (St. Petersburg) 40, 2019–2025 (November 1998)     

Anomalous heat capacity of Agx and the nonlinear temperature dependence of the formation energy of Frenkel defects

Abstract

The nonlinear decrease of Gibbs free energy (g_F) for the formation of Frenkel defects in Agx accounts for the anomalous increase of electrical conductivity and self-diffusion in this system. Using an analytical expression for g_F(T) the excess heat capacity for Frenkel defects is calculated. A comparison with experimental data indicates that all the anomalies of heat capacity at high temperature is not accounted for. A contribution from Schottky defects is thus probable.     

Defect entropies and enthalpies in BaF<Subscript>2</Subscript>

Various experimental techniques have revealed that the predominant intrinsic point defects in BaF₂ are anion Frenkel defects. Their formation, enthalpy and entropy, as well as the corresponding parameters for the fluorine vacancy and fluorine interstitial motion have been determined. In addition, low temperature dielectric relaxation measurements in BaF₂doped with uranium leads to the parameters τ₀, E in the Arrhenius relation τ = τ₀ exp(E/k _B T) for the relaxation time τ. For the relaxation peak associated with a single tetravalent uranium, the migration entropy deduced from the pre-exponential factor τ₀ is smaller than the anion Frenkel defect formation entropy by almost two orders of magnitude. We show that, despite their great variation, the defect entropies and enthalpies are interconnected through a model based on anharmonic properties of the bulk material which have been recently studied by employing density-functional theory and density-functional perturbation theory.     

Bulk conductivity and polarization of ionic crystals exhibiting defect exchange between inequivalent sites

The bulk conductivity of ionically conducting crystals in which Schottky or Frenkel defects jump between inequivalent sites can be appreciably more complex than that of simpler materials. An equivalent electrical circuit is derived to describe the bulk ac response of crystals of the tysonite type. The circuit has the form of a two-component Maxwell-Wagner capacitor and includes a capacitative element which represents a frequency-dependent bulk polarization not associated with dipolar complexes. The application of the model to LaF₃ is discussed.     

Kinematic quasi-vacancy Frenkel biexciton in a Davydov multiplet

This paper shows that, as a consequence of paulion-type Frenkel excitons in molecular crystals such as anthracene, with several molecules per unit cell, bound biexcitons exist in the absence of dynamic exciton-exciton attraction. The coupling of excitons in ideal crystals of this type is brought about by the same kinematic effect that causes excitons in nonideal crystals to be localized close to defects such as vacancies. In the excitation spectrum, the resonance peak of the resulting biexciton is found inside a band corresponding to the sum of the energies of excitons of unlike components of a Davydov doublet, located between the bands of the total energies of excitons of the like components of the doublet. The corresponding dispersion equation is obtained, and the energy and wave function of the biexciton is determined. Fiz. Tverd. Tela (St. Petersburg) 41, 423–428 (March 1999)     

Proprietes electroniques et electrogalvaniques du tellurure d'argent α domaine d'existence

A study of the electronic and electrogalvanic properties of α silver telluride has been performed on samples whose non-stoiehiometry has been determined by coulometric titration with the cell Ag/AgI/Ag₂Te/Pt. The data lead to the adoption of a model of Frenkel defects on the silver sublattice that are fully ionised. The homogeneity range is reported from 162 to 508°C: it extends essentially on the tellurium side of the stoichiometric composition. The free energies of formation of the α and β forms of the tellurides whose compositions are near Ag_1,6Te, Ag_1,9Te and Ag_2,0Te have been determined between 23°C and 360°C.     

Correlation effects and energetics of point defects in uranium dioxide: a first principle investigation

Density functional (DFT) calculations have been used to investigate the stability of point defects in uranium dioxide. Correlation effects are taken into account within the DFT?+?U approach as implemented in the Vienna ab initio simulation package (VASP). More particularly, the formation energies of both intrinsic and extrinsic point defects, i.e. vacancies, interstitials, Frenkel pairs and Schottky trio defects, are calculated. Our results are compared with available experimental data and are also discussed in relation to previous calculations based on conventional functionals, such as the local spin-density approximation and generalized gradient approximations.     

Computer modelling of intrinsic defects and migration processes in KY3F10

Abstract

The computer modelling technique was used in the present work to study the intrinsic defects and the migration processes in KY₃F₁₀. The main intrinsic disorder was found to be F Frenkel pairs but at higher temperatures it is possible that KF pseudo-Schottky defects could also be present in the material. The ionic conduction process is mainly due to the fluorine ions migrating via both vacancy and interstitialcy mechanisms.     

Effect of radiation-induced emission of schottky defects on the formation of colloids in alkali halides

Formation of vacancy clusters in irradiated crystals is considered taking into account radiation-induced Schottky defect emission (RSDE) from extended defects. RSDE acts in the opposite direction compared with Frenkel pair production, and it results in the radiation-induced recovery processes. In the case of alkali halides, Schottky defects can be produced as a result of the interaction of extended defects with excitons, as has been suggested by Seitz in 1954. We consider a model that takes into account excitonic mechanisms for the creation of both Frenkel and Schottky defects, and which shows that although the contribution of the latter mechanism to the production of primary defects may be small, its role in the radiation-induced evolution of microstructure can be very significant. The model is applied to describe the evolution of sodium colloids and the formation of voids in NaCl, which is followed by a sudden fracture of the material, presenting a potential problem in rock salt-based nuclear waste repositories. The temperature, dose rate and dose dependence of colloid growth in NaCl doped with different types of impurities is analyzed. We have found that colloid growth may become negative below a threshold temperature (or above a threshold dose rate), or below a certain impurity concentration, which is determined by the RSDE, that depends strongly on the type and concentration of the impurities. The results obtained with the model are compared with experimental observations.     

The singlet electronic states of pyrrole: a theoretical study by both ab initio multi-reference configuration interaction methods and time-dependent density functional theory and a reconsideration of the experimental VUV spectral data

The singlet electronic excitation spectrum of pyrrole has been reinvestigated by both multi-reference multi-root configuration interaction (CI) calculations and time-dependent density functional theory (DFT) with asymptotically corrected exchange-correlation potentials. The methods used a triple zeta valence + polarization + Rydberg (TZVPR) basis set and a much larger active space than in our previous CI study [Palmer, M. H., Walker, I. C., and Guest, M. F., 1998, Chem. Phys., 238, 179]. Computed vertical excitation energies, oscillator strengths and electronic charge distributions were used to characterize and assign the valence and Rydberg excited states over an energy range of 5–12 eV.

A comparison of the present methods with other high-level ab initio studies has been made, including the effects of basis sets and size of CI, and some statistical relationships determined. The present CI vertical excitation energies are generally in closer agreement with the cluster-type methods, especially CC3, than to the various second-order perturbation-type methods (CASPT2, CASPT2-MS, ADC(2) and MRMP).

The influence on the excitation energies from exact orbital exchange and multiplicative potentials in hybrid functional development has been investigated. Differences between the CI and the DFT methods vary in the order B97-2 < B97-1 < HCTH < LDA. The differences between hybrid DFT and CI excitations are minimized when the fraction of orbital exchange (ξ) lies in the approximate range 0.2–0.3. The Rydberg and valence-type excitations are seen to be less sensitive than the static polarizability to the inclusion of orbital exchange or multiplicative potentials in hybrid functional development.

In order to allow a realistic assessment of the performance of the theoretical studies, the assignment of the experimental electronic spectrum of pyrrole is discussed in detail. Previous conclusions have led to incorrect numbers of Rydberg s- and d-type states, while f-type states have previously been ignored. Some excitations from the second IP, which must occur in the 5–10 eV range, have been reassigned in light of the known small differences between other spectroscopic states and quantum defects. There is an urgent need for higher-resolution studies of pyrrole and related molecules.     

Formation and diffusion of self-interstitial atoms in silicon crystals under hydrostatic pressure: Quantum-chemical simulation

A theoretical modeling of the formation of Frenkel pairs and the diffusion of a self-interstitial atom in silicon crystals at normal and high (hydrostatic) pressures has been performed using molecular dynamics, semiempirical quantum-chemical (NDDO-PM5, PM6), and ab initio (SIESTA) methods. It is shown that, in a silicon crystal, the most stable configuration of a self-interstitial atom in the neutral charge state (I ⁰) is the split configuration 〈110〉. The shifted tetrahedral configuration (T ₁) is stable in the singlet and triplet excited states, as well as in the charge state Z = +2. The split 〈110〉 interstitial configuration remains stable under hydrostatic pressure (P ≤ 80 kbar). The activation barriers for diffusion of self-interstitial atoms in silicon crystals are determined to be as follows: ΔE _a (Si)(〈110〉 → T ₁) = 0.59 eV, ΔE _a (Si)(T ₁ → T′₁) = 0.1 eV, and ΔE _a (Si)(T ₁ → 〈110〉) = 0.23 eV. The hydrostatic pressure (P ≤ 80 kbar) increases the activation barrier for diffusion of self-interstitial atoms in silicon crystals. The energies of the formation of a separate Frenkel pair, a self-interstitial atom, and a vacancy are determined. It is demonstrated that the hydrostatic pressure decreases the energy of the formation of Frenkel pairs.     

Linear and nonlinear excitonic absorption in semiconducting quantum wires crystallized in a dielectric matrix

Spectra of linear and nonlinear absorption of GaAs and CdSe semiconducting quantum wires crystallized in a transparent dielectric matrix (inside chrysotile-asbestos nanotubes) have been measured. Their features are interpreted in terms of excitonic transitions and filling of the exciton phase space in the quantum wires. The theoretical model presented here has allowed us to calculate the energies of excitonic transitions that are in qualitative agreement with experimental data. The calculated exciton binding energies in quantum wires are a factor of several tens higher than in bulk semiconductors. The cause of this increase in the exciton binding energy is not only the size quantization, but also the “dielectric enhancement,” i.e., stronger attraction between electrons and holes owing to the large difference between permittivities of the semiconductor and dielectric matrix. Zh. éksp. Teor. Fiz. 114, 700–710 (August 1998)     

The diffusion of silver ions in AgBr/Agi sheet crystals

Abstract

The results of the tracer diffusion of Ag⁺ by chemical microsectioning technique in AgBr/I sheet crystals up to the solubility limit in the temperature range 110–240°C are presented. The monotonic increase in the diffusivity and decrease of the activation enthalpy for diffusion with the increase of the iodide component in AgBr result from the decrease of the formation energy for Frenkel defects with the increase of elastic strain introduced by the oversized iodide ions.     

Proprietes electroniques et electrogalvaniques du seleniure d'argent β: Domaine d'existence

A study of the electronic and electrogalvanic properties of β silver selenide has been performed on polycrystalline samples whose non-stoichiometry is controlled by eoulometric titration with the cell Ag/RbAg₄I₅/Ag_2+? Se/Pt. The adoption of an electronic model according to which the Frenkel defects of the silver sublattice are completely ionised allows us to compute independently the non-stoichiometry with the two formulaes δ = [Ag^o_i] ? [V'_Ag] and δ = n ? p. The homogeneity range has been drawn at positive temperatures and the formation enthalpy of the Frenkel defects is H'_F = 0,40 eV.     

Ab initio study of palladium and silicon carbide

Ab initio methods have been used to investigate the properties of Pd as impurity in bulk SiC at five charged states within the framework of density functional theory using the local spin density approximation. It was found that Pd interstitials and substitutionals have similar energy to their intrinsic counterparts. In addition, Pd substitutes for a vacancy, di-vacancy, and tri-vacancy with similar energies. Pd diffuses through SiC via an interstitial mechanism employing the tetrahedral sites and Pd can substitute for Si and C at positive charged states. Removing electrons (p-type doping) from SiC lowers the formation and migration energies of Pd defects in SiC for most configurations.     

Deffect free energies in lattice gauge theories with matter fields

We introduce and analyze different defect free energies in lattice gauge theories with matter fields. We investigate in which way the behaviour of these defect free energies characterizes different phase (and different regimes not separated by bulk phase boundaries) of such theories. Our main analytical results concern the ₂ model, but some of our concepts and method extend to a fairly general class of models, including non-abelian lattice gauge theories.We also estimate masses of topological solitons (vortices and magnetic monopoles) in terms of defect free energies of line defects.     

四方相BaTiO3缺陷性质的第一性原理计算

采用基于密度泛函理论的第一性原理方法,研究了BaTiO₃在四方相下的各种缺陷性质.计算结果表明,在富氧环境下,钛的中性氧空位、分肖特基缺陷2V^3-_Ti+3V²⁺_O形成能分别为最低;而当体系处在还原环境下时,氧空位逐渐成为主要缺陷,其形成能最低.由于四方相下存在较强的Ti—O键共价杂化,四方相下全肖特基缺陷V^2-_Ba关键词： 缺陷 第一性原理 3')" href="#">BaTiO₃     

Atomic-scale studies of native point defect and nonstoichiometry in silicon oxynitride

The native point defects and mechanism of accommodating deviations from stoichiometry of Si₂N₂O crystal have been investigated using atomistic simulation techniques. This work firstly provides a reliable classical interatomic potential model derived from density functional theory calculations. The force-field parameters well reproduce the crystal structure, elastic stiffness, and dielectric constants of Si₂N₂O. It is expected that the force-field parameters are useful in future investigations on Si₂N₂O by molecular dynamic simulation. The calculated formation energies for native defects suggest that intrinsic disorder in stoichiometric Si₂N₂O is dominated by antisites and a degree of oxygen Frenkel defect may also exist in this system. In nonstoichiometric Si₂N₂O, the calculated reaction energies indicate that excess SiO₂ or Si₃N₄ is most likely accommodated by the formation of antisite in the lattice. And we also find that SiO₂ excess is energetically more favorable than Si₃N₄ surplus in Si₂N₂O.