Realization of optoelectronic integrated transmitter and receiver for POF Applications

The optoelectronic integrated transmitter and receiver for 650 nm plastic optical fiber (POF) communication applications realized in 0.5 μm BCD (Biplor, CMOS and DMOS) process is first described in this paper. The 650 nm resonant cavity light emitting diode (RCLED) is used as light source. It is first proposed for optoelectronic integration of the transmitter by bonding RCLED to the driver chip. Temperature compensation technology is employed in the driver circuit to compensate for the modulation current. In the monolithic optoelectronic integrated receiver, large area multi-finger PIN photodetector (PD) that is compatible with standard IC process, transimpedance amplifier and post amplifier are presented. Measurement results show that the responsivity and capacitance of PD is 0.25 A/W and 5 pF, respectively. The sensitivity of receiver is −14.6 dBm at 180 Mb/s and BER is less than 10⁻⁹ for 650 nm input light by POF. A clear eye diagram is demonstrated for 180 Mb/s PRBS. These indicate that optoelectronic integrated chips can be employed in high-speed POF-based Fast Ethernet systems for broadband access network applications.     

硅基光电集成器件研究进展

随着器件结构与制作工艺的不断创新与完善，硅基发光器件已经可以实现室温下的有效工作，外量子效率可达到0．1％；低功耗的硅基高速调制器件的调制速率达到1GHz以上；而硅基光探测器对1300nm与1550nm波长的探测响应度也已分别达到了0．16mA／W和0．08mA／W．文章对硅基光电器件的研究进展情况进行了概述，并着重对几种器件的结构及工作原理进行了分析．     

Three terminals optoelectronics devices integrated into a silicon on silicon waveguide

In this paper we describe two different kind of optoelectronic devices both based on a three terminals active device and exploit the plasma dispersion effect to achieve the desired working. The first device exploits this effect in order to obtain an optical modulation. The second device is an optoelectronic router based on the mode-mixing principle together with the injection-induced optical phase shift. Both devices are integrated into a Silicon on Silicon optical channel waveguide which can be realized using a standard bipolar process. The possibility of using standard, well-known technology presents several advantages with respect to III–V Optoelectronics. The active three terminal device used is a Bipolar Mode Field Effect Transistor (BMFET). Numerical simulation results are presented on both devices.     

Preparation of organic/inorganic hybrid nanocomposites by ultraviolet irradiation and their packaging applications for organic optoelectronic devices

By ultraviolet (UV)-assisted synthetic procedure, we have successfully prepared several UV curable organic/inorganic hybrid nanocomposites with excellent gas barrier capabilities, moderate hardness, and good adhesive strength. The experimental results reveal that the physical properties of nanocomposites depend on their chemical structures. Therefore, introduction of silicone and polyurethane (PU) into the Acrylics backbone dramatically raises the adhesive strength as well as refractive index and lowers the gas penetration. Furthermore, we have also applied lab-made nanocomposite g for the encapsulation of organic optoelectronic devices such as OLEDs, flexible OLEDs, and organic solar cells. With the package of lab-made nanocomposite g, the organic optoelectronic devices effectively resist the entry of moisture and oxygen in the air, extending the lifetimes.     

Theoretical investigations of cascaded chaotic synchronization and communication based on optoelectronic negative feedback semiconductor lasers

In this paper, a novel chaotic relay system, based on cascaded synchronization in optoelectronic negative feedback chaotic semiconductor lasers, is presented. Synchronization characteristics and the influence of parameter mismatches on synchronization performances are investigated. The results show that the complete synchronization can be achieved under suitable system parameters; internal parameter mismatches of the lasers have influence on synchronization quality, but the system possesses more robustness to parameter mismatches compared with cascaded synchronization based on coherent optical feedback. Moreover, communication related issues are also investigated. Under the additive chaos modulation (ACM) encryption scheme, encoded messages can be successfully extracted at both mediator laser (ML) and receiver laser (RL) parts; parameter mismatches of the lasers will affect messages decoding, but the influence is not strong.     

集成光学光纤陀螺的噪声分析

集成光学光纤陀螺以其体积小、重量轻、以及高的调制频率与消光比引起了国际上的广泛重视。深入研究光纤陀螺的噪声特性,对于降低零漂是极为重要的。通过广泛调研,从光源、光纤环与集成光学芯片、电路、以及外界环境的角度,详细的论述了各噪声源产生的机理、特征和一些抑制噪声的办法。简要的提出了一种利用负反馈补偿零漂的方法     

基于石墨烯电极的蒽醌分子器件开关特性

研究了基于石墨烯电极的蒽醌分子器件的开关特性.分别选取了锯齿型和扶手椅型的石墨烯纳米带作为电极,考虑蒽醌基团在氧化还原反应下的两种构型,即氢醌(HQ)分子和蒽醌(AQ)分子,构建了双电极分子结,讨论了氧化还原反应和不同的电极结构对蒽醌分子器件开关特性的影响.研究发现,无论是锯齿型石墨烯电极还是扶手椅型石墨烯电极,HQ构...     

Enhancement of electroluminescent properties of organic optoelectronic integrated device by doping phosphorescent dye

Organic optoelectronic integrated devices(OIDs) with ultraviolet(UV) photodetectivity and different color emitting were constructed by using a thermally activated delayed fluorescence(TADF) material 4, 5-bis(carbazol-9-yl)-1, 2-dicyanobenzene(2 CzPN) as host. The OIDs doping with typical red phosphorescent dye [tris(1-phenylisoquinoline)iridium(Ⅲ), Ir(piq)_3], orange phosphorescent dye {bis[2-(4-tertbutylphenyl)benzothiazolato-N,C~(2')]iridium(acetylacetonate),(tbt)_2 Ir(acac)}, and blue phosphorescent dye [bis(2, 4-di-fluorophenylpyridinato)-tetrakis(1-pyrazolyl)borate iridium(Ⅲ), FIr6] were investigated and compared. The(tbt)_2 Ir(acac)-doped orange device showed better performance than those of red and blue devices, which was ascribed to more effective energy transfer. Meanwhile, at a low dopant concentration of 3 wt.%, the(tbt)_2 Ir(acac)-doped OIDs showed the maximum luminance, current efficiency, power efficiency of 70786 cd/m~2, 39.55 cd/A, and 23.92 lm/W, respectively, and a decent detectivity of 1.07 × 10~(11) Jones at a bias of -2 V under the UV-350 nm illumination. This work may arouse widespread interest in constructing high efficiency and luminance OIDs based on doping phosphorescent dye.     

Dielectrophoretic behavior of a single cell when manipulated by optoelectronic tweezers: A study based on COMSOL ALE simulations

Optoelectronic tweezers uses optically induced dielectrophoretic (DEP) force for manipulating cells in aqueous solution, which has shown potential applications in biology and tissue engineering among other possibilities. To effectively design the optoelectronic tweezers (OETs) chip, detailed knowledge about the behavior of cells in response to DEP force in an aqueous layer is needed. In this paper, the trajectories of an SMMC-77721 cell, simulated as a rigid dielectric sphere, in the induced electric field of optical trapping are studied using both an Arbitrary Lagrangian-Eulerian (ALE) method and a particle-tracing method (PTM) available within the COMSOL multiphysics software platform. Because the ALE method involves solving the distorted electric field around the cell and taking a full account of the Maxwell stress tensor (MST), it is expected to provide more accurate predictions about the spherical cell velocity than PTM that involves dipole moment approximation. Our ALE results show noticeably greater cell velocity than that predicted by the classical DEP expression based on dipole moment approximation. The ALE model can help gain new insights for analyzing cell motions in aqueous solution under sophisticated optical spot patterns.     

Coulomb screening effects on the optoelectronic far-infrared properties of spatially separated few-layer graphene

We investigate the longitudinal optical conductivity of spatially separated few-layer graphene analytically and numerically. Each layer could be monolayer or bilayer graphene. The density–density correlation function has been screened by the dielectric function using the random phase approximation, which includes the inter-layer Coulomb coupling. In the presence of the potential function between the layers, the carrier densities in each layer can be tuned respectively. In these two-dimensional layered structures, the main contributions to the optical conductivity are from the intra- and inter-band transition channels in a same layer. In the infrared region, the Drude optical conductivity was observed by the unscreened intra-band transition process. But in the presence of the inter-layer Coulomb interaction, one peak structure of the optical conductivity is observed which can be modified by the dielectric environment. From the number of turning points and the turning positions, the carrier density, the Fermi wavevector, and the layered structure can be determined.     

石墨烯沟道全自旋逻辑器件开关特性

由于石墨烯的电导率相比典型的金属材料更大,自旋弛豫时间更长,自旋轨道相互作用更弱,从而在相同的注入电流情况下,自旋电流在石墨烯材料中的耗散作用更弱.基于自旋传输和磁化动力学耦合模型,研究了石墨烯沟道全自旋逻辑器件的开关特性.结果显示,在相同的电源电压下和器件尺寸下,石墨烯沟道材料的全自旋逻辑器件磁矩翻转时间比Cu沟道更短,流入输出纳磁体的自旋电流更大.同时,长度越短、宽度越窄的沟道其开关时间更短,功耗更小.在满足磁体磁矩翻转的临界开关电流的情况下,石墨烯沟道的可靠工作长度也显著大于Cu沟道.所以石墨烯材料是相比于金属材料更理想的沟道材料.另外,通过合理选择沟道尺寸,能进一步降低器件开关时间和功耗.上述结论为全自旋逻辑器件的优化设计与应用提供了理论参考.     

Novel optical devices based on the tunable refractive index of magnetic fluid and their characteristics

As a new type of functional material, magnetic fluid (MF) is a stable colloid of magnetic nanoparticles, dressed with surfactant and dispersed in the carrier liquid uniformly. The MF has many unique optical properties, and the most important one is its tunable refractive index property. This paper summarizes the properties of the MF refractive index and the related optical devices. The refractive index can be easily controlled by external magnetic field, temperature, and so on. But the tunable refractive index of MF has a relaxation effect. As a result, the response time is more than milliseconds and the MF is only suitable for low speed environment. Compared with the traditional optical devices, the magnetic fluid based optical devices have the tuning ability. Compared with the tunable optical devices (the electro-optic devices (LiNbO₃) of more than 10 GHz modulation speed, acoustic-optic devices (Ge) of more than 20 MHz modulation speed), the speed of the magnetic fluid based optical devices is low. Now there are many applications of magnetic fluid based on the refractive index in the field of optical information communication and sensing technology, such as tunable beam splitter, optical-fiber modulator, tunable optical gratings, tunable optical filter, optical logic device, tunable interferometer, and electromagnetic sensor. With the development of the research and application of magnetic fluid,a new method, structure and material to improve the response time can be found, which will play an important role in the fields of optical information communication and sensing technology.     

布里渊增强四波混频时域特性的理论研究

通过对布里渊增强四波混频(BEFWM)瞬态耦合波方程的数值求解，描述了共轭输出光的时域调制行为.同时，对能量耦合过程中起决定性作用的声学波的时空演化特征进行了模拟与分析，由此给出BEFWM时域特性物理机理的解释.研究表明，共轭光输出强度的波动与介质内声波场的分布和起伏相关联，共轭光波形调制现象的强弱取决于介质声子寿命、信号及抽运光强度、有效作用长度等诸多参数.     

Effects of germanium incorporation on optical performances of silicon germanium passive devices for group-IV photonic integrated circuits

Optical interconnect in integrated optoelectronic circuits is one of the promising next-generation technologies for replacing metalized interconnect. Efforts have been made to use silicon (Si)-compatible materials such as germanium (Ge) and Ge-buffered III–V compound semiconductors, along with Si, as optical sources for Si and group-IV integrated optoelectronic systems. This opens the possibility that higher fraction of Ge with its high refractive index (n) can be incorporated in Si waveguide for optical interconnect and the graftability between Si and group-IV or III–V materials would be improved in silicon photonics. In this work, advantageous features of nano-structured silicon germanium (Si_1−xGe_x) optical waveguide with different Ge fraction (x) were evaluated by both optical simulations and theoretical calculations, which are mainly found in the enhanced optical confinement and better interfacing capability. Along with the SiGe waveguide, performance of Si_1−xGe_x microring resonator under material loss in the effect of extinction coefficient (k) has been investigated to suggest the necessity of optimizing the Ge content in Si_1−xGe_x passive devices. While carrying out the establish design criteria, n and k have been modelled in closed-form functions of Ge fraction at 1550 nm. Furthermore, by examining high-resolution transmission electron microscopy (HR-TEM) images, process compatibility of Ge with either group-IV alloys or III–V compound semiconductors is confirmed for the monolithically integrated photonic circuits.     

一种热光可调谐级联微环滤波器的理论分析

根据Vernier效应可大幅度提高滤波器自由光谱范围和调谐范围,设计了一种热光可调谐级联微环滤波器. 利用传输矩阵方法和有限元方法从理论上计算了对于第一级微环半径为48 μm,第二级半径为50 μm的级联微环滤波器的自由光谱范围和调谐范围可以达到75.6 nm,而功耗仅为103.1 mW,这是目前为止我们 所知的基于微环谐振腔的硅基热光可调谐滤波器中最大的自由光谱范围和在如此低功耗下最大的调谐范围. 利用有限元方法,还计算了半径为50 μm微环的热光调谐响应时间,上升沿时间为3.5 μs,下降沿时间仅为0.8 μs.     

Theoretical analysis of pattern effect suppression in semiconductor optical amplifier utilizing optical delay interferometer

The ability of an optical delay interferometer (ODI) to suppress the pattern effect that is inherently present in a straightforward, solitary semiconductor optical amplifier (SOA) whose dynamic response is slower than the period of its driving high-speed return-to-zero (RZ) data signal is theoretically investigated. For this purpose an existing comprehensive model that simulates and links the operation of these two elements is methodically applied to their concatenated configuration. In this manner an extensive set of curves is numerically obtained, which allow to analyze and assess the impact of the input pulse energy and width as well as of the SOA carrier lifetime, linewidth enhancement factor and small signal gain on the amplitude modulation of the transmitted sequence at the output of each one of these block units. Their thorough study and interpretation reveals that the employment of the ODI can significantly reduce the value of this quality metric resulting from a single SOA only. The main offered benefit, however, is that any technical restrictions regarding the involved critical parameters can be considerably relaxed while at the same time their useful operational range can be extended. These important findings highlight the necessity of placing this passive device after the SOA and exploiting it in order to effectively alleviate the detrimental pattern-dependent degradation. This fact in conjunction with its overall practicality renders it a promising candidate for enhancing, within the frame of the proposed scheme, the performance of SOAs that are employed as pure amplification elements in fiber-optic communication systems and networking applications.     

集成电路器件微波损伤效应实验研究

主要介绍了微波脉冲参数变化对集成电路器件微波易损性的影响。实验表明：集成电路器件损伤功率阈值随着微波频率的增加而增大,随着脉冲重复频率的增加而减小。随脉冲宽度的变化较为复杂,总体是随着脉冲宽度的增加损伤功率阈值逐渐降低,但存在一拐点区域（约100ns）,在此区域后,脉冲宽度增加但器件损伤功率阈值变化不甚明显。器件损伤功率阈值基本呈正态分布,且方差较小,因此,器件的损伤概率近似于0~1分布。     

Theoretical and experimental study of the CR-39 behavior under electron beam

This work concerns the action of an electron beam on some physical properties of the poly(diethylene bis(allyl carbonate)) CR39 manufactured in Bristol and Limoges laboratories. The material undergoes structural, physical and chemical modifications induced by the incident electrons energy transfer in the substrate. This is similar to the processes generated by the secondary electrons created during ion beam-polymers interactions. An experimental study of the topographic modifications on the CR39 under electron beam is presented. In parallel, a theoretical study using Monte-Carlo simulations and concerning the 3D energy transfer for one diameter of the spot is developed in order to evaluate the radio induced process.     

一种反馈FDL结构竞争解决丢包率的研究

对反馈FDL结构的光分组交换竞争解决方案建立了数学模型并进行了理论分析,推导出了在反馈FDL输入分组比输入光纤输入分组具有更高输出优先级时的系统丢包率公式,对系统丢包率与负载、输入光纤端口数和FDL数目的关系进行了数值计算和讨论.结果表明：由于FDL缓存分组的概率与输入分组负载的非线性关系导致了反馈FDL结构在低负载时对丢包率的改善非常明显,对高负载的改善却十分有限.随着FDL数目的增加,对系统丢包率的改善不会趋于一个极限值,这是与使用波长转换器进行竞争解决的不同之处,因此使用反馈FDL结构可以降低波长转换器的丢包率极限.     

Theoretical and experimental studies on the adsorption behavior of thiophenol on gold nanoparticles

FT‐Raman spectra were obtained for thiophenol (TP) and TP on gold nanoparticles. All vibrational fundamentals for the TP molecule are assigned on the basis of the scaled quantum force field procedure. Three model systems are studied and compared for the interactions of TP with the Au atom: (1) TP with a Au atom, C₆H₅SH Au; (2) TP anion with a Au atom, C₆H₅S⁻ Au; and (3) TP with a Au atom and subsequent formation of thiophenylate, C₆H₅SAu. The equilibrium structures and Raman spectra were calculated for the model systems using density functional theory (DFT) with the B3LYP functionals and the mixed basis set 6‐311 + G** (for C, S, H) and LANL2DZ (for Au), and theoretical Raman wavenumbers of C₆H₅SAu and C₆H₅S⁻ Au were assigned according to potential energy distributions. The third model system is shown to be preferred over the other two. The calculated binding energies are also shown to support the third model system. It is suggested that a simple model, such as the one used in the present study, is reasonable to describe surface‐enhanced Raman spectroscopy of thiophenol adsorbed on gold nanoparticles. Copyright © 2007 John Wiley & Sons, Ltd.