Photothermal ionisation spectroscopy of oxygen-related shallow defects in crystalline silicon

Shallow thermal donors are electrically active oxygen-related thermally formed defects observed in oxygen-rich silicon annealed between 300 ° and 600 ° C. Seven donors have been identified with an average central-cell correction of only 5 meV. In view of their molecule-like nature this close agreement to the effective mass theory prediction for a hydrogen-like donor in silicon is of interest. It is shown that these centres are not correlated to the residual impurities phosphorus and boron but rather to the presence of nitrogen. Nitrogen-doped oxygen-rich samples show increased shallow thermal donor growth and a reduction in the growth of other oxygen-related donors in comparison to normally nitrogen-undoped oxygen-rich samples. A reduction in shallow thermal donor concentration at high nitrogen concentrations is reported.     

Luminescence mechanisms of oxygen-related defects in AlN

Spectral characteristics of native oxygen-related defects existing in the crystalline lattice of AlN were studied. Features of photoluminescence observed under exposure to ultraviolet light together with those of the photostimulated luminescence testify the recombination character of luminescence. The mechanism of luminescence of oxygen-related defects is proposed.     

Differential evaluation of the Hall effect in silicon with oxygen-related donors

Three kinds of samples were used to form Co suicides by thermal annealing: firstly, a Co film of about 370 Å thick, evaporated on a (100) single crystal Si (Si ^c /Co); secondly, an evaporated boron-containing Si (Si ^e (B)) layer on the top of the first sample (Si ^c /Co/Si ^e (B)). The last sample is in the Co film of the first sample we deposited a Si^e(B) layer (Si ^c /Co/Si ^e (B)/Co). A laterally uniform CoSi₂ layer can be formed from the second and the third samples by annealing at 450 °C. In the first sample, the CoSi₂ can be formed only at temperatures above 500 °C and the disilicide is laterally less uniform than in the second and third samples. The Schottky barrier heights of the three samples derived from the forward and reverse I–V characteristics show that the barrier height is 0.01–0.02eV higher in the uniform case than in the nonuniform case.     

Hydrostatic pressure effects on exciton states in InAs/GaAs quantum dots

Based on the effective-mass approximation, the hydrostatic pressure effects on exciton states in InAs/GaAs self-assembled quantum dots (QDs) are studied by means of a variational method. Numerical results show that the exciton binding energy has a minimum with increasing dot height for any hydrostatic pressure. The interband emission energy increases when the hydrostatic pressure increases. In particular, we find that hydrostatic pressure has a remarkable effect on exciton states for small QD size. Our results are in agreement with experiment measurements.     

Hydrostatic pressure effects on impurity states in GaAs/AlAs quantum wells

Within the framework of effective-mass approximation, we have studied the effects of hydrostatic pressure on the binding energy of a shallow donor impurity in an infinite quantum well by means of a variational method. It is found that the first derivative of the binding energy and energy shift is reliable parameter for describing the structure.     

Hydrostatic pressure effects on impurity states in InAs/GaAs quantum dot

Within the framework of effective-mass approximation, the hydrostatic pressure effects on the donor binding energy of a hydrogenic impurity in InAs/GaAs self-assembled quantum dot(QD) are investigated by means of a variational method. Numerical results show that the donor binding energy increases when the hydrostatic pressure increases for any impurity position and QD size. Moreover, the hydrostatic pressure has a remarkable influence on the donor binding energy for small QD. Realistic cases, including the impurity in the QD and the surrounding barrier, are considered.     

Convergence to the steady state for the reaction-diffusion kinetics of irradiation-produced defects

The kinetics of irradiation-produced point defects in solids are modelled by certain reaction-diffusion equations in one spatial dimension. For various boundary conditions the global asymptotic stability of the stationary solution is proven using the integrated version of a non-smooth Lyapunov function.     

Hydrostatic pressure and temperature effects of an exciton-donor complex in quantum dots

Using the matrix diagonalization method and the compact density-matrix approach, we studied the combined effects of hydrostatic pressure and temperature on the electronic and optical properties of an exciton-donor complex in a disc-shaped quantum dot. We have calculated the binding energy and the oscillator strength of the intersubband transition from the ground state into the first excited state as a function of the dot radius. Based on the computed energies and wave functions, the linear, third-order nonlinear and total optical absorption coefficients as well as the refractive index have been examined. We find that the ground state binding energy and the oscillator strength are strongly affected by the quantum dot radius, hydrostatic pressure and temperature. The results also show that the linear, third-order nonlinear and total absorption coefficients and refractive index changes strongly depend on temperature and hydrostatic pressure.     

Hydrostatic pressure and electric field effects on the normalized binding energy in asymmetrical quantum wells

We have investigated the simultaneous effects of the hydrostatic pressure and electric field on the ground subband level and on normalized binding energy of an on-center donor in asymmetrical GaAs/AlGaAs quantum wells within the effective-mass approximation and a variational approach. We found that the well size at which the impurity energy changes from positive to negative value (turning point) strongly depends on the asymmetry and hydrostatic pressure. As a key result, we suggest that the study of the normalized binding energy for various values of the electric field in direct and inverse polarization regimes can be used to feel the quantum well asymmetry and to unambiguously find out the effective pressure acting on a given heterostructure.     

On the global asymptotic stability of the chemical rate equations for irradiation-produced point defects

We prove that a Lyapunov function, for the chemical rate equations for irradiation-produced point defects, exists which ensures their global asymptotic stability.     

Paramagnetic defects in silicon/silicon dioxide systems

Paramagnetic defect centers in Si/SiO₂ systems have been observed by direct ESR, optically-induced ESR, and NMR relaxation of liquids at the outer oxide surface. In general, all the defects reported elsewhere were confirmed, but with some significant discrepancies in character. The P_B center was observable even at room temperature. The P_C center was found to exist much deeper in the silicon than previously determined, and it is tentatively identified to be neutral iron. Surface liquid relaxation is very strong on oxidized crushed silicon, is not dependent on liquid composition, and suggests a strong wide-line spin center in the outer oxide surface. The optically activated spin center created by HF/HNO₃ etches was found not to involve H₂O or OH functionalities, and appears to be a nitrogenous radical. The optical defect center lies within the silicon, and its presence warrants caution in use of HNO₃-based etches in wafer processing. Oxides prepared at elevated pressures show fewer P_A and P_C defects than those produced by conventional processing, which indicates potential merit in pressure oxidation methods.     

Hydrostatic pressure effects on the fluorescence of tyrosine solution with different concentrations of copper ion

The effects of hydrostatic pressure on the fluorescence of tyrosine (Tyr) solution with different concentrations of copper ion (Cu²⁺) were investigated. The fluorescent intensity of pure Tyr aqueous solution enhanced with the increase of hydrostatic pressure, the fluorescent intensity increased by 8.8% when the pressure was up to 60 MPa. The fluorescence of Tyr aqueous solution was quenched obviously due to complex formation with Cu²⁺ and the quenching became stronger when the concentration of Cu²⁺ was higher. When the concentration ratio of Cu²⁺ and Tyr ([Cu²⁺]/[Tyr]) increased from 0 to 40, the fluorescent intensity decreased to 19.0% at 0.1 MPa and 24.2% at 60 MPa. It was also found that the effects of pressure on the fluorescent intensity of Tyr aqueous solution were different at various [Cu²⁺]/[Tyr]. The fluorescent intensity increased by 14.4% and 38.4% for 1 and 40 ratio respectively when the pressure was changed from 0.1 MPa to 60 MPa.     

碳化硅中点缺陷对热传导性能影响的分子动力学研究

碳化硅(SiC)由于性能优异,已广泛应用于核技术领域.在辐照环境下,载能入射粒子可使材料中的原子偏离晶体格点位置,进而产生过饱和的空位、间隙原子、错位原子等点缺陷,这些缺陷将改变材料的热物性能,劣化材料的服役性能.因此,本文利用平衡分子动力学方法(Green-Kubo方法)采用Tersoff型势函数研究了点缺陷对立方碳化硅(β-SiC或3C-SiC)热传导性能的影响规律.研究过程中考虑的点缺陷包括:Si间隙原子(Si_Ⅰ)、Si空位(Si_Ⅴ)、Si错位原子(Si_C)、C间隙原子(C_Ⅰ)、C空位(C_Ⅴ)和C错位原子(C_Si).研究结果表明,热导率(λ)随点缺陷浓度(c)的增加而减小.在研究的点缺陷浓度范围(点缺陷与格点的比例范围为0.2%—1.6%),额外热阻率(Δ_R-R_defect-R_perfect,R=1/λ,R_defect为含缺陷材料的热阻率,R_perfec...     

Hydrostatic pressure and thermal loading induced long-term optical effects in tightly jacketed double-coated optical fibers

By the viscoelastic theory, the hydrostatic pressure and thermal loading simultaneously induced optical effects in tightly jacketed double-coated optical fibers in the long term are analyzed. Using the Laplace transformation method, close-form solutions for the microbending loss and refractive index changes are obtained in the transform domain. The results of the microbending loss are initially identical to those obtained by the elastic analysis, and then decrease gradually as time progresses. The microbending loss and refractive index changes of the glass fiber are functions of material properties of the coating layers and jacket. To minimize the microbending loss and refractive index changes in the long term, the viscosity ratio η₃/η₁, Young’s modulus ratio E₂/E₁ and E₃/E₁, and ratio of Poisson’s ratio ν₃/ν₁ should be increased. Nevertheless, the ratio of Poisson’s ratio ν₂/ν₁ should be decreased. PACS 42.79.Wc; 61.20.Lc; 68.65.Ac     

Interstitial type defects in implanted silicon

Silicon layers implanted with boron, lithium, phosphorus, and silicon are investigated by x-ray measurements of the lattice constant. It is established that, as a result of ion implantation in silicon, stable interstitial complexes are generated in concentrations comparable to those of vacancy type defects. The interstitial complexes are annealed in stages, viz., I at 140, II at 500°C in the case of irradiation of silicon with light ions, and I at 180, II at 560°C in crystals irradiated with medium mass ions.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 76–80, July, 1984.The authors are grateful to V. D. Tkachev for useful discussion of the results.