薄膜硅/晶体硅异质结电池中本征硅薄膜钝化层的性质及光发射谱研究

本文采用甚高频等离子体化学气相沉积技术 (VHF-PECVD) 制备薄膜硅/晶体硅异质结电池中的本征硅薄膜钝化层, 光发射谱 (OES) 测量技术研究了硅薄膜沉积过程中等离子体发光谱随时间的变化. 结果表明: 在实验优化条件下等离子体发光谱很快达到稳定 (大约25 s), 并且SiH^*/H_α^* 的比值随时间变化较小, 避免了生长过程中硅薄膜结构的不均匀性, 这主要是SiH₄没有完全耗尽避免了SiH₄的反向扩散. 进一步研究了沉积参数对稳态发光谱和硅薄膜性质的影响, 结果表明: 随着硅烷浓度增加, H_α^*峰强度减小, SiH^*峰强度增加, 薄膜从微晶转变成非晶, 非晶硅薄膜钝化效果好; 随着沉积气压增大, H_α^*和 SiH^*峰强度先增加后减小, 高气压下H_α^*和 SiH^*峰强度下降主要是反应前驱物的聚合形成高聚合物, 不利于形成高质量的硅薄膜, 因此钝化效果下降; 随着反应功率密度增加, H_α^*和 SiH^*峰强度增大, 当功率密度为150 mW/cm² 趋于饱和, 硅薄膜的致密度和钝化效果也开始下降, 50 mW/cm²的低功率密度下硅薄膜钝化效果差可能是由于原子H 浓度低, 不能完全钝化单晶硅表面的悬挂键. 关键词： 薄膜硅 异质结 光发射谱 钝化     

基于近红外光谱技术的紫外光老化落叶松木材表面材色变化的定性和定量研究

自然光中的紫外光在木材表面产生复杂的光化学反应,是木材在自然环境中老化降解速度最快,反应最强的化学过程。基于近红外光谱(NIRs)技术探讨了落叶松表面材色在340 nm波长紫外光照射条件下的老化状况。不同时间(180,540,900,1 080 h)试材弦切面经紫外光人工老化后,测量木材表面材色色度学指数,并采集NIRs信息。由NIRs二阶导数及其差谱图反映的信息,定性分析和讨论了木材表面化学组分基团的变化;定量建立基于偏最小二乘法(PLS)结合留一交叉验证的木材表面材色预测模型。结果表明：(1) 随着人工老化时间延长,木材表面明度值L*降低,红绿指数a*与黄蓝指数b*出现先增加后缓慢降低的趋势,表明发色基团的形成随着紫外光照射时间的延长而减少,在辐射时间540 h达到最大值,此外,色差值ΔE*与紫外光照射时间成正相关。(2) NIRs二阶导数在6 996,6 773以及6 287 cm-1等分别反映木材中纤维素非结晶区、半结晶区和结晶区的光谱吸光度随着老化时间的延长而增加,而5 986 cm-1反映木质素特征性谱带吸收峰随着紫外光老化时间的延长而降低,表明木质素出现降解。通过紫外光照射1 080 h与对照材的差谱分析发现,纤维素和半纤维素基团的特征峰差谱值为正,表明紫外光辐射后木材表面的纤维素和半纤维素相对含量增加,而木质素基团特征峰差谱值为负,表明经紫外光辐射后,木质素的降解导致其相对含量减少。这些结果与色度值测量结果相一致。(3) 基于NIRs建立的紫外光照射落叶松表面材色预测模型中,L*交叉验证模型决定系数(R2)为0.949,相对分析误差(RPD)为4.42;a*交叉验证模型R2是0.928,RPD是3.73;b*的交叉验证模型R2是0.831,RPD为2.43,建立的材色预测模型满足预测要求。     

Self-consistent LDA calculation in ion neutralization at metal surfaces

The neutralization of He⁺ scattered off aluminum is calculated via a self-consistent LDA where the metal surface is modeled by an LDA jellium surface, and its structure factor is consistently calculated. This approach includes Auger and plasmon-assisted neutralization channels of He⁺ to the He ground state in front of aluminum. We analyze these neutralization channels, which leads us to a revision of the usual calculations of ion neutralization on surfaces depending on the transferred energy lying below, near, or above the metal plasma frequency. The results of this calculation are compared with those of other methods, namely usual unscreened calculations, calculations which extrapolate bulk results, calculations performed for a step potential surface, and surface calculations in the long-distance limit.     

超声波辅助分散法制备镨掺杂钛酸钙荧光效果珠光颜料

采用超声波辅助分散法在云母钛珠光颜料表面原位生成镨掺杂的钛酸钙,制备一种具有荧光效果的珠光颜料。分别采用荧光分光光度计、激光粒度分析仪、X射线衍射仪、冷场扫描电子显微镜和全自动色差计对所制备的样品进行表征。结果表明：在包覆率为5.3%、煅烧温度为900 ℃、煅烧时间为150 min的条件下获得的样品表面光滑平整、粒径分布均匀（平均粒径为24.34 μm）。该样品在太阳光下呈白色,其颜色特征参数（L^*,a^*,b^*）为（89.03,-1.29,1.00）。在304 nm紫外光激发下,样品的发射光谱主峰位于613 nm,呈红光发射,对应于Pr³⁺的¹D₂→³H₄跃迁,平均荧光寿命为154.50 μs。     

Surface structure and electron density dependence of scattered Ne ion fractions from the Si(1 0 0)-(2×1) surface

The magnitudes and azimuthal anisotropies of 4 keV Ne⁺ scattered ion fractions from the Si(1 0 0)-(2×1) two-domain surface have been measured by means of time-of-flight scattering and recoiling spectrometry. The absolute values of these ion fractions as well as their dependence on surface structure and electron density have been determined. By investigating the trajectories of the scattered Ne⁺, a clear correlation is demonstrated between these experimentally observed surviving ion fractions of Ne⁺ and the fraction of ions that scatters from the topmost layer of the surface. This is interpreted in terms of a model in which the neutralization probability of Ne⁺ is proportional to the local substrate electronic charge density.     

惰性稀土离子和抗衡离子对2-噻吩乙醛酸-铕配合物荧光性能的影响

研究了惰性稀土离子和抗衡离子对一系列2-噻吩乙醛酸-铕配合物荧光性能的影响。分别在2-噻吩乙醛酸-邻菲罗啉-铕和2-噻吩乙醛酸-三苯基氧化膦-铕两个体系中按不同比例掺入钇和钆,研究了它们的荧光光谱。结果表明,钇的加入对2-噻吩乙醛酸-邻菲罗啉-铕体系的荧光强度有很强的敏化作用,并且随加入量的增加,这种敏化作用逐渐增强。钇的加入对2-噻吩乙醛酸-三苯基氧化膦-铕体系则呈现出弱的敏化作用,且在一定程度上具有猝灭作用,但这两种作用都是很微小的。钆在少量加入时对2-噻吩乙醛酸-三苯基氧化膦-铕体系具有猝灭作用,当大量加入时则呈现出很强的敏化作用。不同的抗衡离子对配合物的影响是明显的。在二元配合物中,氯化物体系的固体荧光强度最大;在三元配合物中,硝酸盐体系的固体荧光强度最大。     

Wet etching and passivation of GaSb-based very long wavelength infrared detectors

The etching and passivation processes of very long wavelength infrared (VLWIR) detector based on the InAs/GaSb/AlSb type-II superlattice have been studied. By studying the effect of each component in the citric acid solution (citric acid, phosphoric acid, hydrogen peroxide, deionized water), the best solution ratio is obtained. After comparing different passivation materials such as sulfide + SiO₂, Al₂O₃, Si₃N₄ and SU8, it is found that SU8 passivation can reduce the dark current of the device to a greater degree. Combining this wet etching and SU8 passivation, the R₀A of VLWIR detector with a mesa diameter of 500 μm is about 3.6 Ω ·cm² at 77 K.     

氧化石墨烯修饰倾斜光纤光栅10–12级重金属离子传感

设计了一种氧化石墨烯(GO)功能化的倾斜光纤光栅(TFBG)传感器,用于检测水溶液中的重金属离子.通过氧等离子体活化光纤表面,以及采用GO的无水乙醇分散液,避免了咖啡环效应引起的GO的团聚和堆叠,充分了暴露GO的表面和羧基.吸附重金属离子后, GO-TFBG传感器的透射光谱中的谐振峰发生红移,这是由GO向重金属离子的电子转移导致的有效折射率变化造成的.对Pb²⁺和Cd²⁺离子最低检测限可达到10^–10 mol/L (ng/L量级),相应灵敏度分别为0.426 d B/(nmol·L^–1)和0.385 d B/(nmol·L^–1)(2.06和3.43 d B/(μg·L^–1)).此外, GO-TFBG传感器具有出色的器件一致性, 5组传感器的传感性能稳定.本研究实现了GO纳米片在光纤表面的无团聚和均匀成膜,获得了具有超大表面积的GO并充分暴露表面羧基实现对重金属离子的吸附,利用了TFBG不同模式谐振对环境的高度敏感性,完成了对低浓度重金属离子的高灵敏度、可重...     

Transient behavior of the thermal ion emission from KCl(0 0 1) upon polarity reversal of the electric extraction field

The technique of polarity reversal of the external electric extraction field (strength: 10² V/cm) was applied to study the relaxation of the thermal ion emission from the KCl(0 0 1) single crystal surface. Transient currents of the K⁺ and K₂Cl⁺ ions upon switching from the emission suppression to the ion extraction mode were recorded as a function of the evaporation time, the temperature, and the time of field reversal. The temperature dependence of the time constants of the K⁺ ions obtained from the exponential decreases of the emission currents to their steady-state emission resulted as logτ_h(s)=−(13.39±0.56)+(12.42±0.49)10³/T in a high temperature interval of 826–930 K after a prolonged heating period and as logτ_l(s)=−(20.65±1.04)+(16.77±0.81)10³/T in a low temperature interval of 750–801 K at the initial stage of evaporation, with corresponding activation energies of E_h(K⁺)=2.47±0.14 eV and E_l(K⁺)=3.32±0.16 eV, respectively. The transient currents can be interpreted by a partial adsorption of the suppressed ion currents at the kinks of the surface steps. The differences in the high- and low-temperature runs may be attributed to a strong coarsening of the surface at higher temperatures, which occurs as a bunching of monosteps to macrosteps and/or to an enrichment and segregation of divalent impurities at the surface. The transient behavior of the molecular K₂Cl⁺ ions seems to be strongly correlated with that of the K⁺ ions. This correlation is possibly caused by changes of the strength or the sign of the local electrical field connected with the excess charge at the kinks.     

Electron stimulated desorption of CO from Pd1/W(110)

The electron impact behavior of CO adsorbed on Pd₁/W(110) was investigated. The desorption products observed were neutral CO, CO⁺, and O⁺. After massive electron impact residual carbon, C/W = 0.15, but not oxygen was also found, suggesting that energetic neutral O, not detected in a mass analyzer must also have been formed. Formation of β-CO, i.e., dissociated CO with C and O on the surface was not seen. The total disappearance cross section varies only slightly with coverage, ranging from 9 × 10 ⁻¹⁸ cm² at low to 5 × 10⁻¹⁸ cm² at saturation (CO/W = 0.75). The cross section for CO⁺ formation varies from 4 × 10⁻²² cm² at satura to 2 × 10⁻²¹ cm² at low coverage. That for O⁺ formation is 1.4 × 10⁻²² cm² at saturation and 2 × 10⁻²¹ cm² Threshold energies are similar to those found previously [J.C. Lin and R. Gomer, Surf. Sci. 218 (1989) 406] for CO/W(110) and CO/Cu₁/W(110) which suggests similar mechanisms for product formation, with the exception of β-CO on clean W(110). It is argued that the absence or presence of β-CO in ESD hinges on its formation or absence in thermal desorption, since electron impact is likely to present the surface with vibrationally and rotationally activated CO in all cases; β-CO formation only occurs on surfaces which can dissociate such CO. It was also found that ESD of CO led to a work function increase of the remaining Pd₁/W(110) surface of 500 meV, which could be annealed out only at 900 K. This is attributed to surface roughness, caused by recoil momentum of energetic desorbing entities.     

用于α和μ常数变化测量的碘离子光谱研究

分子离子I_2~+的禁戒跃迁光谱有可能用于测量α和μ常数的变化,并且具有增强的灵敏度.通过分析I_2~+在11860—13100 cm~(-1)范围内的转动光谱,拟合了A~2Π_(3/2)-X~2Π_(3/2)系统31个振转带的5759根吸收谱线,得到5个属于X~2Π_(3/2)态和9个属于A~2Π_(3/2)态的振动能级准确的转动光谱常数.在量子噪声极限和1 Hz跃迁线宽的条件下,计算得到X~2Π_(3/2)和X~2Π_(1/2)之间的禁戒跃迁对α和μ常数变化测量的灵敏度为δ_(α/α)≈2.37×10~(-19)a~(-1)和δ_(μ/μ)≈1.18×10~(-18)a~(-1).     

Ionic conduction and dielectric relaxation in Ag/Na ion-exchanged aluminosilicate glasses: mixed mobile ion effect and KWW relaxation

Ag⁺/Na⁺ ion-exchanged aluminosilicate glasses with uniform concentration profiles were prepared, and their electrical conductivities were investigated as functions of the ion-exchange ratio and the initial glass compositions. In the case of the ion-exchanged glasses of x20Ag₂O–(1−x)20Na₂O–10Al₂O₃–70SiO₂ in mol%, the conductivity, σ, and its activation energy, E_σ, showed a minimum and a maximum at the same ion-exchange ratio x=0.3, respectively, and the mixed mobile ion effect (MMIE) was observed. The fully ion-exchanged sample attained σ=3.5×10⁻⁵ S/cm at 200 °C, which was 1.5 orders of magnitude larger than that of initial glass. In the case of x25Ag₂O–(1−x)25Na₂O–25Al₂O₃–50SiO₂, the mixed mobile ion effect was also observed at x=0.5. The maximum conductivity of 2×10⁻⁴ S/cm at 200 °C was obtained in the fully ion-exchanged glass sample.

The electric relaxation analysis was also conducted on both systems, and Kohlrausch–Williams–Watts (KWW) fractional exponent β was obtained as a function of x. The decrease of β was observed near x≈0.3 in the former system, while that of the later system was independent of the ion-exchange ratio. Based on the structural analysis results, the observed behaviors were investigated from the point of view of the occupation of Ag⁺ ions on the non-bridging oxygen-site (NBO-site) and the charge compensation-site (CC-site) of AlO₄ tetrahedral unit.     

The angular intensity correlation functions C(1) and C(10) for the scattering of light from randomly rough dielectric and metal surfaces

We study the statistical properties of the scattering matrix S(q|k) for the problem of the scattering of light of frequency ω from a randomly rough one-dimensional surface, defined by the equation x₃=ζ(x₁), where the surface profile function ζ(x₁) constitutes a zero-mean, stationary, Gaussian random process. This is done by studying the effects of S(q|k) on the angular intensity correlation function C(q,k|q',k')=〈I(q|k)I(q'|k')〉-〈I(q|k)〉〈I(q'|k')〉, where the intensity I(q|k) is defined in terms of S(q|k) by I(q|k)=L^-1₁(ω/c)|S(q|k)|², with L₁ the length of the x₁ axis covered by the random surface. We focus our attention on the C⁽¹⁾ and C⁽¹⁰⁾ correlation functions, which are the contributions to C(q,k|q',k') proportional to δ(q-k-q'+k') and δ(q-k+q'-k'), respectively. The existence of both of these correlation functions is consistent with the amplitude of the scattered field obeying complex Gaussian statistics in the limit of a long surface and in the presence of weak surface roughness. We show that the deviation of the statistics of the scattering matrix from complex circular Gaussian statistics and the C⁽¹⁰⁾ correlation function are determined by exactly the same statistical moment of S(q|k). As the random surface becomes rougher, the amplitude of the scattered field no longer obeys complex Gaussian statistics but obeys complex circular Gaussian statistics instead. In this case the C⁽¹⁰⁾ correlation function should therefore vanish. This result is confirmed by numerical simulation calculations.     

Search for up-down quark mass differences via isospin symmetry breaking

We performed a series of experiments employing the two pion production reactions p + d → ³He + π⁰ and p + d → ³H + π⁺. The two isopin related reactions differ by a Clebsch Gordan coefficient of 2. We searched for deviations in this ratio in complete angular distributions in the range of the Δ excitation as well as in the vicinity of the η production threshold.     

Mössbauer investigations on Np3S5

The 59.5 keV Mössbauer resonance of ²³⁷Np has been measured in Np₃S₅ at 77 and 4.2 K. At 77 K, two different quadrupolar splittings are observed. The first one (δ₁ = −5(1) mm sec⁻¹/NpAl₂) is assigned to the Np⁴⁺ ions and the second one (δ₂ = 28(1) mm sec⁻¹/NpAl₂) is assigned to the Np³⁺ ions. At 4.2 K the spectrum gives a ratio of areas S(Np³⁺)/S(Np⁴⁺) of 2.0. These results clearly confirm the crystallographic data of this mixed-valence material.     

Photoluminescence and capacitance–voltage characterization of GaAs surface passivated by an ultrathin GaN interface control layer

A novel surface passivation technique for GaAs using an ultrathin GaN interface control layer (GaN ICL) formed by surface nitridation was characterized by ultrahigh vacuum (UHV) photoluminescence (PL) and capacitance–voltage (C–V) measurements. The PL quantum efficiency was dramatically enhanced after being passivated by the GaN ICL structure, reaching as high as 30 times of the initial clean GaAs surface. Further analysis of PL data was done by the PL surface state spectroscopy (PLS³) simulation technique. PL and C–V results are in good agreement indicating that ultrathin GaN ICL reduces the gap states and unpins the Fermi level, realizing a wide movement of Fermi level within the midgap region and reduction of the effective surface recombination velocity by a factor of 1/60. GaN layer also introduced a large negative surface fixed charge of about 10¹² cm⁻². A further improvement took place by depositing a Si₃N₄ layer on GaN ICL/GaAs structure.     

端抽运Yb3+:YVO4激光准三能级理论模型研究

立足于Yb离子能级结构、谐振腔增益损耗和布居数分配情况, 利用爱因斯坦辐射理论和速率方程理论, 建立了适合Yb³⁺离子激光的准三能级理论模型. 该模型引入有效腔长增益贡献因子对腔内光强进行了从头计算, 获得了阈值方程. 利用此模型与Yb激光的实验结果相比较, 发现有效腔长对增益的贡献可以改变腔内损耗和粒子数反转的概率, 也继而影响激光阈值和输出功率效率. 应用于LD端抽运Yb³⁺:YVO₄激光实验中, 在971 nm LD抽运, 有效晶体长度 L=1 mm, 输出镜透过率对激光波长1016 nm为1%条件下, 获得阈值为1.1 W; 有效晶体长度L=2 mm, 输出镜透过率为10%条件下, 阈值获得为3.9 W. 关键词： 3+:YVO₄')" href="#">Yb³⁺:YVO₄ 准三能级模型 有效腔长增益贡献因子     

1/f Noise in dye-sensitized solar cells and NIR photon detectors

All electronic devices are plagued with 1/f noise originating from many causes. The most important factors contributing to 1/f noise in a semiconductor is believed to be recombination of carriers and their trapping at defects and impurity sites. Adsorption of moisture and electron acceptor molecules enhances the intensity of 1/f noise. Amazingly, some molecular species that strongly chelate to the semiconductor surface, suppress 1/f noise owing to passivation of the recombination sites. Thus in addition to sensitization, the dye adsorbed on the nanocrystallites plays a key role in mitigation of recombinations. For this reason dye-sensitized heterojunctions could also find application as low noise NIR photon detectors. Experiments conducted with oxide semiconductors (TiO₂, ZnO, SnO₂) indicate that the mode of binding of dyes at specific sites determines the extent to which the recombination and 1/f noise are suppressed. The transport of electrons in a nanocrystalline matrix is diffusive with a diffusion coefficient D depending on the trapping and detrapping processes. Thus passivation of trapping sites by the adsorbed dye is expected to increase the response time which can be expressed as τ  L²/D, where L = thickness of the nanocrystalline film. Measurement techniques and construction of a dye-sensitized NIR photon detector will be discussed.     

XPS study of vanadium–yttrium hydrates

X-ray photoelectron spectroscopy was used to study the chemical composition and valence states of the metal ions in vanadium–yttrium hydrate. The binding energies, FWHM and shape of the main XPS peaks were analyzed. The concentration ratio of tetra- and pentavalent vanadium ions C=V⁴⁺/(V⁴⁺+V⁵⁺), which is an important parameter, deciding the electronic part of total conductivity, was determined before (C=0.14) and after heating at 720 K (C=0.28).     

ZnS:Ag的ESR及结构相变研究

ESR实验表明Ag在ZnS微晶中是以Ag⁺离子的形式存在,没有测到Ag²⁺离子的信号.以Mn²⁺为探针的ESR和X射线衍射分析研究发现,在ZnS微晶由立方点阵(β相)变为六角点阵(α相)的结构相变中,Ag⁺离子对相变的影响与掺杂浓度和煅烧温度有关,当掺Ag量为5×10^-4g/g时相变在1100~1200℃出现逆转现象.由Mn²⁺的ESR谱得出α相的朗德因子g为2.006,越精细常数a为6.76mT,β相的g为2.002,a为6.81mT.