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太阳能电池材料-铜锌锡硫化合物薄膜制备及器件应用研究进展 总被引:1,自引:0,他引:1
锌黄锡矿结构的CZTS(铜锌锡硫)材料与目前在薄膜太阳能电池领域表现出色的黄铜矿结构的CIGS(铜铟镓硒)材料具有相似的晶体结构,且CZTS有着很好的光电性能,组成元素在地球上含量丰富,安全无毒,非常适合用来发展高效、廉价的太阳能电池.近期CZTS类太阳能电池的最高效率已达到12.6%,在科研和产业领域引起了广泛关注.在简介了“新星”太阳能电池材料CZTS的性质及薄膜太阳能电池器件的基本结构之后,重点总结了CZTS薄膜的制备方法(真空、非真空法)以及相应器件效率,其中对众多非真空制备法进行了独到的归类总结.最后,对CZTS薄膜的优化方法进行了分析,并对其未来发展方向做了展望. 相似文献
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以金属氯化物为金属源,硫脲为硫源,聚乙二醇和乙二醇为混合溶剂,采用溶剂热法一步合成了球形的铜锌锡硫纳米颗粒.利用X射线衍射仪(XRD),扫描电子显微镜(SEM)和透射电子显微镜(TEM)分析了铜锌锡硫纳米颗粒的物相、结构、形貌;利用电池测试系统对以铜锌锡硫纳米颗粒为锂离子电池负极材料组装的锂离子电池的电化学性能进行了测试.结果表明:所得到的产物为具有锌黄锡矿结构的纯相铜锌锡硫,颗粒直径在300~500nm.铜锌锡硫纳米颗粒作为锂离子电池的负极材料具有较好的稳定性,有望在锂离子电池研究和应用中得到推广. 相似文献
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以金属氯化物为金属源,硫脲为硫源,聚乙二醇和乙二醇为混合溶剂,采用溶剂热法一步合成了花状的铜锌锡硫纳米颗粒.利用X射线衍射仪,扫描电子显微镜、能谱仪、透射电子显微镜、紫外-可见分光光度计分析了铜锌锡硫纳米颗粒的物相、结构、形貌及光学性能,并初步探讨了铜锌锡硫的生长机理.结果表明,所得到的铜锌锡硫纳米颗粒具有锌黄锡矿结构,直径在500~2 000nm范围内可调,其中花状的铜锌锡硫纳米颗粒由大量厚度约25nm的纳米片构成.所制备的铜锌锡硫纳米颗粒对可见光具有明显的吸收;利用外延法推算得到其禁带宽度约为1.5eV,与太阳能电池所需的最佳禁带宽度相近,显示其有望在新一代太阳能电池中得到应用和推广. 相似文献
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CdTe和Cu(In,Ga)(S,Se)2 (CIGSSe)光吸收材料在新型化合物半导体太阳电池研究中占据着主导地位。尽管CdTe和CIGS太阳电池拥有较高的转换效率和先进的技术,但是仍存在着一些问题,如所用材料中的元素地壳丰度低或有毒,这阻碍了其未来的大规模应用。近年来,由于Cu2ZnSn(S,Se)4 (CZTSSe)薄膜太阳电池使用的元素地壳含量丰富且环境友好,逐渐成为了研究的热点。CZTSSe光吸收材料被认为能够取代CdTe和CIGS成为下一代光伏技术的潜力材料。基于此,本文将简单介绍CZTSSe材料的结构、性质和制备方法。重点阐述CZTSSe材料的组装技术和沉积方法的发展和优势,如基于真空的沉积方法和基于溶液的沉积方法,简述其优缺点。此外,本文对CZTSSe组装和CZTSSe纳米晶制备方法的最新研究进展也进行了总结。最后,对CZTSSe光伏技术的一些限制因素进行了分析,并对CZTSSe薄膜电池未来的研究前景进行了展望。 相似文献
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以特殊脉冲电沉积方法制备CuInSe2(CIS)前驱体薄膜, 通过真空蒸镀法在CIS薄膜上沉积Al膜, 经硒化退火后在氧化铟锡(ITO)基底上制备了Cu(InAl)Se2(CIAS)薄膜. 采用扫描电子显微镜(SEM)、X射线能谱(EDS)、X射线衍射(XRD)、X射线光电子能谱(XPS)、紫外-可见吸收光谱(UV-Vis)对其形貌、结构、成分及光学吸收性质进行了表征. 结果表明, 制备的CIAS薄膜颗粒均匀, 表面平整致密, 呈黄铜矿结构. 薄膜在可见光区具有良好的吸收, 带隙约为1.65 eV. 相似文献
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在CuCl2、InCl3、GaCl3及H2SeO3组成的酸性水溶液电沉积体系中, 对Mo/玻璃衬底上一步法电沉积Cu(In1-x, Gax)Se2(简写为CIGS)薄膜进行了研究. 为了稳定溶液的化学性质, 在溶液中加入邻苯二甲酸氢钾和氨基磺酸作为pH缓冲剂, 将溶液的pH值控制在约2.5, 并提高薄膜中Ga的含量. 通过大量实验优化了溶液组成及电沉积条件, 得到接近化学计量比贫Cu 的CIGS薄膜(当Cu与In+Ga的摩尔比为1时, 称为符合化学计量比的CIGS薄膜; 当其比值为0.8-1时, 称为贫Cu或富In的CIGS 薄膜)预置层, 薄膜表面光亮、致密、无裂纹. 利用循环伏安法初步研究了一步法电沉积CIGS薄膜的反应机理, 在沉积过程中, Se4+离子先还原生成单质Se, 再诱导Cu2+、Ga3+和In3+发生共沉积. 电沉积CIGS薄膜预置层在固态硒源280 ℃蒸发的硒气氛中进行硒化再结晶, 有效改善了薄膜的结晶结构, 且成份基本不发生变化,但是表面会产生大量的裂纹. 相似文献
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Single crystals of two new modifications of [P(C6H5)4]2[Cu2I4] were obtained by reaction of granulated copper with iodine and [P(C6H5)4]I in dry acetone under nitrogen atmosphere. They crystallise monoclinically, space group P21/n (No. 14), a = 11.550(6), b = 7.236(2), c = 27.232(13) Å, β = 98.13(3)°, V = 2253(2) Å3, and Z = 2 ([P(C6H5)4]2[Cu2I4]-C), and space group Cc (No. 9), a = 17.133(5), b = 15.941(5), c = 18.762 (6) Å, β = 114.02(1)°, V = 4681(3) Å3, and Z = 4 ([P(C6H5)4]2[Cu2I4]-D), respectively. In these compounds the [CuI2]? anions form dimers di-μ-iodo-diiodocuprate(I), which are either planar ( C ) or folded ( D ). 相似文献
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室温下,铜粉和2-噻吩甲酰三氟丙酮、三苯基膦在甲醇和四氢呋喃混合溶剂中反应,生成一价铜的配合物[Cu(C_8H_4F_3O_2S)(PPh_3)_2],测定了该配合物的晶体结构,结果表明,晶体属单斜晶系,P2_1/n空间群,晶胞参数:a=10.584(1),b=16.738(1),c=22.728(9)A;β=94.22(2)°,V=4015.2A3,Mr=785.29,Z=4,Dc=10299g/cm3,μ=9.86cm-1。晶体结构由直接法解出,使用块对角矩阵和全矩阵最小二乘法对原子参数进行修正,最后偏离因子R=0.048,Rw=0.054,其中4391个I>3σ(I)的可观察衍射点参加了结构修正,结果表明,Cu原子由2个O原子和2个P原子配位,形成畸变四面体构型。 相似文献
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Solène Béchu Muriel Bouttemy Jackie Vigneron Daniel Lincot Jean-François Guillemoles Arnaud Etcheberry 《Surface and interface analysis : SIA》2020,52(12):975-979
Cu(In,Ga)Se2 absorbers were immerged in deionized water for different times, and specific chemical evolutions were monitored thanks to X-ray photoemission spectroscopy. Cu(In,Ga)Se2 related dissolution products were studied in water through induced coupled plasma optical emission spectroscopy. From those analyses, specific surface network disorganization was observed, with Cu migration towards the surface, leading to different kinetics of oxidation and dissolution for each element that could be quantified. 相似文献
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Influence of Thermal Treatments on In-depth Compositional Uniformity of CuIn(S,Se)2 Thin Films 下载免费PDF全文
Hai-bing Xie Wei-feng Liu Guo-shun Jiang Xin-yi Li Fei Yan Chang-fei Zhu 《化学物理学报(中文版)》2012,25(4):481-486
CuIn(S,Se)2 thin films were prepared by thermal crystallization of co-sputtered Cu-In alloy precursors in S/Se atmosphere. In-depth compositional uniformity is an important prereq-uisite for obtaining device-quality CuIn(S,Se)2 absorber thin films. In order to figure out the influence of heat treatments on in-depth composition uniformity of CuIn(S,Se)2 thin films, two kinds of reaction temperature profiles were investigated. One process is "one step profile", referring to formation of CuIn(S,Se)2 thin films just at elevated temperature (e.g. 500 oC). The other is "two step profile", which allows for slow diffusion of S and Se elements into the alloy precursors at a low temperature before the formation and re-crystallization of CuIn(S,Se)2 thin films at higher temperature (e.g. first 250 oC then 500 oC). X-ray diffrac-tion studies reveal that there is a discrepancy in the shape of (112) peak. Samples annealed with "one step profile" have splits on (112) peaks, while samples annealed with "two step profile" have relatively symmetrical (112) peaks. Grazing incident X-ray diffraction and en-ergy dispersive spectrum measurements of samples successively etched in bromine methanol show that CuIn(S,Se)2 thin films have better in-depth composition uniformity after "twostep profile" annealing. The reaction mechanism during the two thermal processing was also investigated by X-ray diffraction and Raman spectra. 相似文献
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Dimeric complex [Cu(SbPh3)2I]2 has been synthesized by a solid state reaction at a low heating temperature and its crystal structure has been analyzed by X-ray crystallography. The crystal is monoclinic, space group P21/a (#14), a = 20.436(5), b=14.125(3), c=24.683(3)(A), β=110.67(1)°, Z=4, V=6666(2)(A)3; C72H60Sb4I2Cu2, Mr = 1792, Dc = 1.787 g.cm-3, μ(MoKα) = 31.88 cm-1, F(000)=3440, R=0.038 and Rw=0.043 for 5632 observed reflections (I≥3.0σ(I)) and 361 refined parameters. The result reveals the copper and the bridging iodide atoms form an approximately planar rhomboid array. Effects of the bulkiness of the ligands upon the structures of the analogous complexes are discussed. 相似文献
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1 INTRODUCTIONCu(I)complexeswithphosphineandarsineligandsarewellknown〔1〕.ForCuphosphinecomplexes,theCu∶ligandratiovariesfrom1∶1to1∶4andcoordinationgeometryofCu(I)rangesfromlineartotrigonal,thentotetrahedralextremes;forexample,the1∶2adductsCu(PPh3)… 相似文献