用高压显微光谱系统研究非晶态As2S3的光学折射率随流体静压力变化的规律

用金刚石对顶砧高压显微光谱系统在高达66kbar的流体静压力和光谱波段为400—900nm范围内,用透射光干涉谱法测量了非晶态As₂S₃(a-As₂S₃)的光学折射率n与压力p以及波长λ的变化关系。a-As₂S₃的折射率对压力极为敏感,在波长为650nm,压力从1bar变到66kbar时,它增加35％。在计算机上用最小二乘法对实验点进行拟合的结果得到:对某一波长λ来说,遵循n(P)=n(0)+Ap+Bp²的非线性关系。其中n(p)和n(0)是p压和常压下的折射率,A和B是与波长有关的系数,文中给出了A和B的具体参数。这个关系与Weinstein和Galkiewicz等人公布的n(p)和p之间遵循线性关系不同。 关键词：     

用高压显微光谱系统测量流体静压力对非晶态As_2S_3光学吸收边的影响

用金刚石对顶砧高压显微光谱系统在0—66 kbar的流体静压力范围内测量了a-As_2S_3的光学吸收达随压力的移动特性。发现a-As_2S_3的光学吸收边随压力的增加而迅速红移。在计算机上用最小二乘法对实验点进行了拟合,结果得出吸收边和压力之间的关系为:E_g(P)=E_g(0)-1.31×10~(-3)P-3.91×10~(-4)P~2 4.04×10~(-6)P~3值得注意的是|dE_g/dP|和压力之间的关系经历了一个先是增大,然后再减小以至于趋于饱和的过程。这和Weinstein等人先前的实验结果是有所不同的。     

用高压显微光谱系统研究非晶态As_2S_3的光学折射率随流体静压力变化的规律

用金刚石对顶砧高压显微光谱系统在高达66kbar的流体静压力和光谱波段为400—900nm范围内,用透射光干涉谱法测量了非晶态As_2S_3(a-As_2S_3)的光学折射率n与压力p以及波长λ的变化关系。a-As_2S_3的折射率对压力极为敏感,在波长为650nm,压力从1bar变到66kbar时,它增加35％。在计算机上用最小二乘法对实验点进行拟合的结果得到:对某一波长λ来说,遵循n(P)=n(0) Ap Bp~2的非线性关系。其中n(p)和n(0)是p压和常压下的折射率,A和B是与波长有关的系数,文中给出了A和B的具体参数。这个关系与Weinstein和Galkiewicz等人公布的n(p)和p之间遵循线性关系不同。     

掺杂As2S8非晶态薄膜波导的光阻断效应

实验研究了未掺杂和低浓度掺锡和掺磷的As₂S₈薄膜波导的光阻断效应,提供了三种样品的光阻断响应曲线、室温退激实验数据和光谱测试数据. 结果表明,掺锡样品可以明显提升毫秒级响应的快过程恢复作用,同时还具有减少残留传输损耗的效果,掺磷的效果则相反. 结合实验结果给出了分析讨论. 关键词： 光波导技术 硫属化合物玻璃 光阻断效应 掺杂     

Far infrared absorption spectra of amorphous (As2S3)?(Sb2S3) semiconductors and the spatial charge fluctuation

Far infrared absorption spectra of amorphous (As₂S₃)_1–x(Sb₂S₃)_x system (x=0.00.6) were measured in the wavenumber region 725 cm^–1 with Lamellar grating far infrared Fourier Transform Spectrometer, and the spatial fluctuation of charges and its correlation range were estimated with charge fluctuation model. The charge fluctuation of (As₂S₃)_1–x(Sb₂S₃)_x system increases with Sb₂S₃ concentration x. On the other hand, the correlation length of the charge fluctuation decreases from 7 A to 4.5 A with an increase in x. As a result, it can be found that the medium range order of As₂S₃ changes drastically with an incease in Sb₂S₃ concentration x.     

基于AZ5214光致保护层的As2S3硫系脊型波导制备

实验研究发现AZ5214光刻胶在一定曝光剂量下显影后会留存一定厚度的底膜,该底膜可以在干法刻蚀过程中避免As-S薄膜与碱性显影液直接接触,减轻薄膜表面损伤,起到保护作用。基于此,采用该底膜作为保护层制备As₂S₃脊型波导,研究结果表明,在AZ5214光刻胶匀胶厚度为2.1μm、紫外曝光剂量为200 mJ/cm²、显影时间为45 s的条件下会留存约为220 nm厚的光致保护层,该条件下保护层均匀性较好,且在刻蚀阶段可以完全去除。实验表明利用此保护层制备的As₂S₃脊型波导具有良好的形貌特征,波导脊宽约为3μm、脊高约为800 nm的As₂S₃脊型波导的传输损耗约为0.74 dB/cm@1 550 nm。     

用高压显微光谱系统研究(Zn0.85Cd0.15)S:Cu,Al磷光体在流体静压力下施主-受主对的发光

用金刚石对顶砧高压显微光谱系统在室温和1bar—66kbar的流体静压力范围内研究了(Zn_0.85Cd_0.15)S:Cu,Al磷光体的发光峰位置和相对发光强度随压力而变化的规律。随着压力的增加,发射峰值波长迅速移向短波方向,而发射峰值对应的光子能量随压力增加的速率为4.7meV/kbar(38cm^-1/kbar)。这个值比该材料的吸收边随压力增加的速率要小。随着压力的增加,该磷光体的发光峰值相对强度急骤下降,当压力从常压升到66kbar时,发光峰值相对强度下降到原值的6％。这些结果可以用Al³⁺-Cu⁺的施主-受主对模型来解释。本文还估计施主(Al³⁺)和受主(Cu⁺)的激活能之和随压力增加的速率为3.7meV/kbar(30cm^-1/kbar)。 关键词：     

Na2CO3的高压拉曼光谱研究

碳酸盐是碳在地球内部的重要载体之一,其在地幔高温高压条件下的晶体化学是理解地球深部碳的赋存状态和循环过程的关键,而结构稳定性和相变是晶体化学最基本的研究内容。碳酸钠（Na₂CO₃）是一种常见的碱性碳酸盐矿物,在产自地幔过渡带-下地幔的金刚石中已发现含钠的碳酸盐矿物包裹体,这成为碳酸钠能够俯冲进入地幔深部的直接矿物学证据。前人利用拉曼光谱技术研究了Na₂CO₃在常温常压下的晶格振动模式,但其在高压下的稳定性和结构变化却鲜有报道。利用金刚石压腔装置结合先进的共聚焦拉曼光谱技术,以硅油作为传压介质,在准静水压力条件下,在0.001～27.53 GPa压力区间对Na₂CO₃粉末在600~1 200 cm-1波段的振动特征进行了细致地分析。本次实验重点分析了[CO₃]2-基团振动模式在升压和卸压过程中的行为。结果表明,在0.001～11.88 GPa压力范围内,[CO₃]2-基团对称伸缩振动γ₁（1 088.06和1 070.76 cm-1）、反对称伸缩振动γ₃（865.10和797.50 cm-1）和面内弯曲振动γ₄（720.10和696.71 cm-1）都出现了振动峰的分裂。随着压力增加,所有振动峰都向高频率漂移,半高宽也逐渐增加。在13.40 GPa时,Na₂CO₃发生结构相变,具体表现为690.08 cm-1处出现1条新的拉曼峰,并且随着压力升高该峰的强度逐渐增大。同时反对称伸缩振动峰γ₃以及面内弯曲振动峰γ₄的强度持续减弱,半高宽也继续变大。这些现象表明Na₂CO₃结构相变源于[CO₃]2-内部晶格变化。当压力卸载到4.18 GPa时,[CO₃]2-的振动模式与常温常压下的完全吻合,相变出现的新峰也已经消失,表明该相变是由[CO₃]2-基团畸变引起的并且具有可逆性。继续升压至27.53 GPa,拉曼光谱继续蓝移,Na₂CO₃的拉曼谱线再没有变化,说明高压相在这一压强范围内保持稳定。在整个加压过程中,反对称伸缩振动γ₃和面内弯曲振动γ₄处的拉曼峰出现强度减弱现象。同时也计算了各个峰频率对压力的依赖系数dγ/dP,结果显示[CO₃]2-基团内各个振动模式对压力的响应是不同的,这很可能与Ｃ-Ｏ键的键长有关。最后,对比发现,对称伸缩振动γ₁峰的强度比反对称伸缩振动γ₃和面内弯曲振动γ₄峰的强度大,并且[CO₃]2-基团对称伸缩振动γ₁受压力影响相对较小,可以用来区别不同种类的碳酸盐矿物。     

光折变法制备的As2S8条形波导的光阻断效应

实验研究了As₂S₈薄膜光折变现象.提出并采用紫外光激励的方法试制了As₂S₈条形波导，导模激励显示该波导具有良好的导波特性.在此基础上，考察了As₂S₈条波导的光阻断效应，实现了光-光效应的开关功能. 关键词： 光波导技术 2S₈条形波导')" href="#">As₂S₈条形波导 光阻断效应 光激励法     

Structural and electrical investigation of (Ag3AsS3)x(As2S3)1?x superionic glasses

Structural studies of (Ag₃AsS₃) _x (As₂S₃)_1−x chalcogenide superionic glasses in the compositional range x = 0.3–0.9 were performed by scanning electron microscopy. Temperature and compositional dependences of transmission coefficient, electrical conductivity, and activation energy were investigated     

Photo-synthesis of As3S2 crystal from AsAs2S2 mixture

Existence of As₃S₂ compound which is stable in a certain temperature range higher than room temperature has been confirmed in AsAs₂S₂ system. Photo-synthesis effect of As₃S₂ crystal from As and As₂S₂ mixture, namely light induced conversion from a crystalline state to another crystalline state, has also been investigated.     

Thermally and photo-induced changes in the valence states of vapour-deposited As2S3 films: A comparative photoemission study of As2S3 and As4S4

During thermal annealing or light irradiation, the changes in the valence states of vapour-deposited As₂S₃ and As₄S₄ films were observed by UPS. The experimental results reveal that an as-deposited As₂S₃ film contains considerable numbers of As₄S₄ molecular units, which polymerize or cross link to form a As₂S₃ glassy network on annealing or irradiation.     

Photoelastic properties of amorphous As2S3

The piezobirefringence of amorphous As₂S₃ was measured in the wavelength range 0.69 to 1.15 μ, and the pressure dependence of the index of refraction was determined at 0.633 and 1.15μ. The dispersion of the photoelastic constants of As₂S₃ is discussed using a one-oscillator model, and compared with the results of a similar analysis performed on GaAs.     

Raman spectra of As4S4 polymorphs: Structural implications for amorphous As2S3 films

Raman-scattering spectra of α-As₄S₄ and β-As₄S₄ have been determined at 300 and 10 K. Although similar in overall aspect, the spectral signatures of the two polymorphs are clearly distinct. We have made a careful comparison of these first-order crystal line spectra to the sharp features reported in the Raman spectra of freshly-deposited films of amorphous As₂S₃. Prior proposals for the presence of As₄S₄ molecules in the unannealed films are supported by these comparisons, but recent contentions that actual microcrystals of β-As₄S₄ are present in the as-deposited material are clearly contradicted by the absence of any of the lattice-phonon lines which are prominent in the crystals at frequencies below 70 cm^-1.     

Photodarkening in glassy As2S3 under pressure

Photodarkening phenomena have been studied in glassy As₂S₃ films under pressure up to 3 kbar. A remarkable shift of the absorption edge to lower energy by the band gap illumination is observed under pressure. The shift is quenched even after releasing pressure. X-ray diffraction studies have also been performed at various pressures. The first sharp diffraction peak disappears at 50 kbar. The origin of the observed enhancement of the photodarkening may be associated with the increase in the interlayer correlation by application of pressure.     

Conductivity of the chalcogenide semi-insulator system: As2S3Sb2S3

The conductivities of mixed As₂S₃Sb₂S₃ thin films are discussed. Temperature independent a.c. data are interpreted in terms of a hopping mechanism where correlation effects are important. Excepting As₂S₃, which exhibits extrinsic behaviour, the dielectric constant, a.c. conductivity and d.c. conductivity pre-exponential factor, all scale approximately linearly with composition.     

非晶锂离子电导率的压力效应

 本文准确测量了0~2.21 GPa流体静压力下整体片状非晶B₂O₃-0.7Li₂O-0.7LiCl-0.10Al₂O₃及其粉末样品的离子电导率和激活体积。对整片非晶锂离子电导率的压力效应应用离子迁移通道的物理图象给出初步的微观解释。对非晶粉末样品离子电导率的压力效应，则发现是由体电导率、接触电导率及同相界面电导率变化的综合结果。高压实验表明，同相界面效应可使离子电导率提高2.5~16倍，该非晶材料还有潜力可进一步提高其离子电导率。     

Resonance Raman scattering from amorphous As2S3

Resonance Raman scattering from amorphous As₂S₃, obtained by temperature tuning the band edge through the He-Ne 6328 Å laser line, is reported.