行波偏转器前置短磁聚焦条纹变像管理论设计与实验研究

条纹变像管因其超高时间分辨特性而成为实现皮秒至飞秒量级时间分辨的重要测量仪器.本文设计了一种同时兼顾高时空分辨的行波偏转器前置短磁聚焦条纹变像管.该管型通过减小电子渡越时间以抑制空间电荷效应、采用偏转器前置以及行波偏转方式提高偏转灵敏度,实现整管时空分辨率的大幅提升.利用CST微波工作室有限元法数值计算条纹变像管行波偏转器的通频带宽、偏转灵敏度,结果表明:本设计中的行波偏转器因其较高的通频带宽特性实现了偏转器上的电磁波相速度在很宽频率范围内与电子轴向群速度匹配,产生更有效偏转.利用CST粒子工作室模拟追踪光电子的运行轨迹,通过最佳像面上的时间调制传递函数和空间调制传递函数,计算得到其理论时间分辨率可达220 fs,空间分辨率高于100 lp/mm.同时根据像差定义给出追踪实际电子轨迹的像差计算方法,实现对变像管成像质量评价.最后利用紫外灯对其进行静态测试,获得静态空间分辨率优于35 lp/mm的结果.     

高时间分辨率条纹变像管的动态特性研究

针对高时空分辨的设计要求,分析影响条纹相机中条纹变像管的物理时间弥散、技术时间弥散和扫描电路触发晃动的因素,优化设计了行波偏转前置磁透镜聚焦的条纹变像管系统.利用CST仿真软件研究了行波偏转器内部的时变电磁场分布,计算了行波偏转器内电磁波的传播速度.结果表明,行波偏转器的指长为8mm、指宽为1mm、指间距为0.24mm、管脚长为2.5mm、板厚为1mm及总长度为17.12mm时,实现了电子团的飞行速度与扫描电脉冲沿行波偏转器的传输速度的匹配.采用电子追迹法和瑞利判据分析了条纹变像管的动态时间和空间特性,得到单次扫描动态时间分辨率为200fs、同步扫描时间分辨率为208fs、动态空间分辨率优于20lp/mm.     

基于电子轰击式CCD的大动态条纹相机研究

为了实现对更弱、以及物理量跨度更大的信号探测, 满足材料、生物、信息、半导体物理以及能源等重大科学领域对诊断精密化的进一步需求, 需要提高条纹相机的动态范围、空间分辨率和信噪比. 为此, 本文研制了基于电子轰击式CCD(EBCCD)的大动态条纹相机, 条纹变像管采用时间和空间方向分别聚焦的矩形框电极和电四极透镜结构, 可降低空间电荷效应. 并提高电子加速电压, 减小电子渡越时间以降低空间电荷相互作用时间. 采用基于电子轰击读出技术的背照式CCD(BCCD)作为读出器件, 取代传统的像增强CCD(ICCD)以缩短图像转换链, 较大地降低了超快诊断设备转换过程中的图像衰减, 从而提高条纹相机图像的信噪比、空间分辨率和动态范围. 实验得到静态空间分辨率高于35 lp/mm, 动态空间分辨率达到20 lp/mm, 偏转灵敏度为60.76 mm/kV, 动态范围达到2094:1, 扫描速度非线性为5.04%, 条纹相机的电子轰击半导体(EBS)增益达到3000以上.     

全光扫描装置设计及实验研究

针对惯性约束聚变研究中高时间分辨测量的需求,详细分析并设计了一种新型的高时间分辨的全光扫描装置。该装置根据光生载流子效应、波导传输和棱镜色散原理,采用全光学元件,实现了全光器件的类条纹相机扫描功能。设计制作了具有棱镜结构和光偏转功能的全光扫描模块。以1053 nm激光为传输光,527 nm激光为泵浦光,完成了脉宽为8 ps的脉冲激光信号作用下的光偏转实验。从技术上验证了全光扫描技术的可行性。     

新型双环腔结构可调谐全光波长转换器的实验研究

利用周期性畴反转铌酸锂光波导级联和频与差频的二阶非线性效应，提出并实验验证了一种新颖的基于无源光波导双环腔结构的可调谐全光波长转换方案，实现了皮秒脉冲从信号光波长到空闲光波长的转换.采取的脉冲信号光脉宽为1.57ps，重复频率为40GHz，抽运光和控制光由双环腔激光器提供，无需任何外界注入连续光. 关键词： 全光波长转换器 双环腔 周期性畴反转铌酸锂 级联和频与差频二阶非线性效应     

一种新型加速结构飞秒条纹相机的设计

为提高飞秒条纹相机的性能,设计了一种新型加速结构的条纹相机,它具有加速栅网和加速狭缝通道,平行平板电极结构。考虑实际惯性约束核聚变(ICF)实验中X射线入射Cs I光阴极,光电子能量弥散较大和空间电荷效应作用下,用蒙特卡罗方法抽样2000个光电子能量角度分布值,用四阶龙格-库塔法计算了电子在条纹相机中的飞行轨迹。在成像面上统计电子时空分布得到该条纹相机的时间和空间分辨特性,结果显示使用该加速结构的飞秒条纹相机空间分辨率达到21l lp/mm,时间分辨率达到508.4fs,对比传统平行平板相机,分别提高了90%和29%左右,性能提高明显。该新型条纹相机加速结构简单,具有实用性。     

基于InP的全光高速相机的理论和实验研究

为了评估基于瞬态光栅的全光高速相机系统中激发光强与图像信号之间的对应关系,验证基于磷化铟（InP）建立该相机的可行性。针对InP材料从理论上分析了从光子入射激发载流子,到载流子影响折射率,再到折射率影响衍射效率过程中各物理量值之间的关系;并建立了基于衍射光收集的图像探测系统获取InP内部的瞬态光栅分布图像。理论结果给出了针对InP材料的激发光强与载流子浓度的关系,探针激光为 1064 nm时载流子浓度与折射率之间的关系,以及瞬态光栅为矩形光栅时折射率与衍射效率之间的关系,特别指出在基于InP和1064 nm探针激光的高速相机系统中,若时间分辨为1 ps量级,对于532 nm激发光,系统的灵敏度为1.3105 Wcm-2量级。实验结果证明了基于InP和1064 nm探针光可以建立全光高速相机系统,并根据所获得图像得出系统的空间分辨好于5.04 lp/mm。     

小型条纹管时空分辨及增益特性研究

围绕小型条纹变像管,数值研究了光电阴极发射的光电子的初始能量及球面阴极曲率半径对物理时间分辨率及时间畸变的影响.结果表明:物理时间分辨率受光电子初始能量影响较大,受阴极曲率半径及离轴距离影响较小;离轴距离越大,时间畸变越大;平面型光电阴极在离轴8mm的物点处,时间畸变大于40ps;随着阴极曲率半径的减小,时间畸变逐渐由正值变为负值;当阴极曲率半径为70mm时,条纹管在整个阴极工作狭缝16mm内的时间畸变小于8ps;同时,在4.3ns全屏扫描时间条件下,光电阴极发射的狭缝像在荧光屏上几乎没有弯曲,且即使在离轴8mm的物点处,光电阴极空间分辨率仍可高达25lp/mm@MTF=10%.此外,实验测试了条纹变像管的静态空间分辨率、阴极积分灵敏度及条纹变像管的亮度增益特性.测试结果显示:光电阴极中心处空间分辨率高于28lp/mm,边缘处高于18lp/mm;阴极灵敏度为178μA/lm,亮度增益高于12,远高于具有相同探测面积的皮秒条纹变像管的亮度增益(亮度增益仅为0.5),在条纹管激光雷达领域具有较强的弱信号探测能力.     

小型条纹管数值模拟及实验研究

针对无人机载及星载激光成像雷达系统对条纹管的小型化、高空间分辨率与大探测面积的应用需求,研制了一台具有高边缘空间分辨能力、高亮度增益的小型条纹相机.采用球面光电阴极、球面荧光屏技术提高了条纹相机的边缘空间分辨率和探测面积,有利于增大激光成像雷达的探测视场;采用狭缝型加速电极代替传统栅网电极,有利于提高条纹相机的电耐性和可靠性;设计了加载高达-15 kV工作电压的像缩小型条纹管,增大了条纹管的亮度增益,有助于增大激光雷达系统的探测距离.测试结果显示：在有效工作面积16 mm×2 mm内,条纹管静态空间分辨率高于29.3 lp/mm@MTF=5%（MTF表示调制传递函数）,亮度增益高达39.4.条纹相机光电阴极处静态空间分辨率高于15 lp/mm@CTF=11.64%（CTF表示对比度传递函数）;边缘动态空间分辨率高于9.8 lp/mm@CTF=5.51%;时间分辨率优于54.6 ps@T_screen=4.3 ns（T_screen为全屏时间）且在整个工作面积内具有较高的一致性;动态范围为345：1@54.6 ps.同时,为满足不同的景深及探测精度需求,相机设置六个扫描档位,可以实现不同扫速下的超快速目标诊断.该条纹相机在无人机载及星载激光成像雷达探测中具有潜在的实用价值.     

同步扫描管时空分辨特性研究

设计了一种具有高空间分辨率、高时间分辨率和大工作面积的同步扫描条纹管.建立三维模型,系统地分析了物理时间分辨率与加速电压、空间分辨率与偏转系统-光电阴极的距离、动态空间分辨率和时间分辨率与扫描速度的关系.给出最优化结构参数和电气参数:d_DC=100 mm,U_g=700 V,T_screen=0.5 ns.数值模拟结果表明,在光电阴极有效工作面积18 mm×2 mm范围内,静态和动态空间分辨率分别高于25 lp/mm@MTF=10%和16 lp/mm@MTF=10%.在T_screen=0.5 ns时,同步条纹管的时间分辨率优于5.6 ps.此外,实验测试得到在400 nm波长处,光电阴极的辐射灵敏度为51 mA/W,光电阴极有效面积内的静态空间分辨率高于25 lp/mm@CTF=13%.     

内嵌InAs量子点的δ掺杂GaAs/AlxGa1-xAs二维电子气特性分析

采用分子束外延技术对δ掺杂GaAs/Al_xGa_1-xAs二维电子气(2DEG)样品进行了生长. 在样品生长过程中, 分别改变掺杂浓度(N_d)、空间隔离层厚度(W_d) 和Al_xGa_1-xAs中Al组分(x_Al)的大小, 并在双温(300 K, 78 K)条件下对生长的样品进行了霍尔测量; 结合测试结果, 分别对N_d, W_d及x_Al与GaAs/Al_xGa_1-xAs 2DEG的载流子浓度和迁移率之间的关系规律进行了细致的分析讨论. 生长了包含有低密度InAs量子点层的δ掺杂GaAs/Al_xGa_1-xAs 2DEG 样品, 采用梯度生长法得到了不同密度的InAs量子点. 霍尔测量结果表明, 随着InAs量子点密度的增加, GaAs/Al_xGa_1-xAs 2DEG的迁移率大幅度减小, 实验中获得了密度最低为16×10⁸/cm²的InAs量子点样品. 实验结果为内嵌InAs量子点的δ掺杂GaAs/Al_xGa_1-xAs 2DEG的研究和应用提供了依据和参考. 关键词： 二维电子气 InAs量子点 载流子浓度 迁移率     

Fractional-dimensional approach for excitons in GaAsfilms on AlxGa1-xAs substrates

Binding energies of excitons in GaAs films on Al_xGa_1-xAs substrates are studied theoretically with the fractional-dimensional approach. In this approach, the real anisotropic “exciton+film” semiconductor system is mapped into an effective fractional-dimensional isotropic space. For different aluminum concentrations and substrate thicknesses, the exciton binding energies are obtained as a function of the film thickness. The numerical results show that, for different aluminum concentrations and substrate thicknesses, the exciton binding energies in GaAs films on Al_xGa_1-xAs substrates all exhibit their maxima with increasing film thickness. It is also shown that the binding energies of heavy-hole and light-hole excitons both have their maxima with increasing film thickness.     

Physical characterization of OMVPE-grown AlxGa1-xAs multi-layer films by means of non-destructive optical reflectometry

A novel Fourier transform technique which was developed by us previously, is applied in this work for non-destructive determination of thickness and refractive index steps of experimental multilayer heteroepitaxial structures. No time consuming least-squares curve-fits are required and theoretically there is no limit on the number of layers which can be analyzed. In order to demonstrate the above method experimentally, multilayer structures of Al_xGa_1-xAs containing up to five layers on GaAs substrates, were grown by organometallic vapour phase epitaxy (OMVPE). For calibration purposes, initial experiments involved the growth of Al_xGa_1-xAs single epilayers on GaAs substrates by the same technique. Layers were grown at five different compositions from x = 0.1 to x = 0.5. Both photoluminescence (at 12 K) and double-crystal X-ray diffraction measurements were undertaken on the single layers in order to establish the composition of the material. The results show excellent correspondence with each other. These results were also compared to secondary ion mass spectrometry data. The agreement between the optical technique developed by us and the other analytical methods was excellent.     

GaAs薄膜的有效量子限制长度及其极化子特性

本文用分数维方法研究Al_xGa_1-xAs衬底上GaAs薄膜中的极化子特性, 提出了确定GaAs薄膜的有效量子限制长度的一个新方法, 解决了原来方法中在衬底势垒处有效量子限制长度发散的困难, 得到了Al_xGa_1-xAs衬底上GaAs薄膜中的极化子的维数和结合能. 关键词： 分数维方法 极化子 GaAs薄膜     

Charge trapping in n-AlxGa1-xAs “insulators” and related device instabilities

In some devices based on GaAs/Al_xGa₁-_xAs heterostructures, the Al_xGa₁-_xAs plays the role of a wide band gap “insulator”. These devices are therefore excellent systems for studying charge trapping in Al_xGa₁-_xAs. It is a poorly understood property of Al_xGa₁-_xAs that incorporation of any n-type dopant results in the formation of a deep electron trap, the DX center. Recent experiments on heterostructure devices have probed both thermal and athermal (hot electron) capture and emission by the DX center. By observing the trapping behavior as the composition (Al mole fraction) of the alloy is varied, the relationship between the trap level and the band structure of the host material has been clarified. A remarkable result is the observation of electron trapping at alloy compositions where the trap state is resonant with the conduction band.     

Fractal dimension study of polaron effects in cylindrical GaAs/AlxGa1−xAs core–shell nanowires

Polaron effects in cylindrical GaAs/Al_xGa_1−xAs core–shell nanowires are studied by applying the fractal dimension method. In this paper, the polaron properties of GaAs/AlxGa1-xAs core–shell nanowires with different core radii and aluminum concentrations are discussed. The polaron binding energy, polaron mass shift, and fractal dimension parameter are numerically determined as functions of shell width. The calculation results reveal that the binding energy and mass shift of the polaron first increase and then decrease as the shell width increases. A maximum value appears at a certain shell width for different aluminum concentrations and a given core radius. By using the fractal dimension method, polaron problems in cylindrical GaAs/Al_xGa_1-xAs core–shell nanowires are solved in a simple manner that avoids complex and lengthy calculations.     

Electrically-manipulable electron-momentum filter based on antiparallel asymmetric double δ-magnetic-barrier semiconductor microstructure

We theoretically investigate the wave-vector filtering(WVF) effect for electrons in an antiparallel asymmetric doubleδ-magnetic-barrier microstructure under a bias, which can be fabricated experimentally by patterning two asymmetric ferromagnetic(FM) stripes on the top and the bottom of GaAs/Al_xGa_(1-x) As heterostructure, respectively. It is found that an appreciable WVF effect appears because of an essentially two-dimensional(2D) process for electrons across this microstructure. WVF effect is found to be sensitive to the applied bias. WVF efficiency can be tuned by changing bias,which may lead to an electrically-controllable momentum filter for nanoelectronics device applications.     

Formation of AlxGa1−xAs periodic array of micro-hexagonal pillars and air holes by selective area MOVPE

A two-dimensional (2D) periodic array having air/semiconductor interfaces can be applied to photonic crystals (PCs), which are expected to control spontaneous emission and optical transports in the next-generation devices. In this paper, we report on the selective area metal-organic vapor phase epitaxial (SA-MOVPE) growth of a Al_xGa_1−xAs 2D periodic array on a GaAs (1 1 1)B substrate for application to 2DPCs having GaAs/AlGaAs heterostructures. Al_xGa_1−xAs (x=0, 0.25 and 0.50) growth was carried out on triangular lattice array of hexagonal GaAs openings and hexagonal SiN_x masks. A uniform Al_0.50Ga_0.50As hexagonal pillar array and a GaAs hexagonal air-hole array with a 1 μm-period were successfully obtained. The important growth parameter for uniform 2DPC structure formation by SA-MOVPE was clarified. Furthermore, we describe the successful demonstration of a 400 nm-period pillar array and an air-hole array, which corresponds to the optical communication wavelength λ=1.3–1.55 μm. The results indicate that SA-MOVPE method is very promising for the formation of uniform semiconductor 2DPCs without the occurrence of process-induced damages.     

Characteristics of cylindrical surrounding-gate GaAs_xSb_(1-x)/In_yGa_(1-y)As heterojunction tunneling field-effect transistors

A Ⅲ-Ⅴ heterojunction tunneling field-effect transistor(TFET) can enhance the on-state current effectively,and GaAs_xSb_1_x/In_yGa_1_yAs heterojunction exhibits better performance with the adjustable band alignment by modulating the alloy composition.In this paper,the performance of the cylindrical surrounding-gate GaAs_xSb_1_x/In_yGa_1_yAs heterojunction TFET with gate-drain underlap is investigated by numerical simulation.We validate that reducing drain doping concentration and increasing gate-drain underlap could be effective ways to reduce the off-state current and subthreshold swing(SS),while increasing source doping concentration and adjusting the composition of GaAs_xSb_1_xIn_yGa_1_yAs can improve the on-state current.In addition,the resonant TFET based on GaAs_xSb_1_x/In_yGa_1_yAs is also studied,and the result shows that the minimum and average of SS reach 11 mV/decade and 20 mV/decade for five decades of drain current,respectively,and is much superior to the conventional TFET.     

BxGa1-xAs合金电子结构与光学性质的第一性原理计算

基于密度泛函理论的第一性原理和特殊准随机近似方法,建立64原子的超胞并且对结构进行几何优化.计算和讨论具有闪锌矿结构的三元合金B_xGa_1-xAs的结构参数、电子结构和光学性质.结果表明：B_xGa_1-xAs的晶格常数与使用Vegard定理计算得到的值有微弱的偏离,键长存在明显的弛豫;计算得到的合金带隙弯曲参数变化较小（2.57 eV-5.01 eV）而且对组分变化的依赖很弱;最后分析硼的并入对GaAs光学参数包括介电函数、反射率、折射率、吸收系数和能量耗散函数的影响.