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1.
Ternary polycrystalline Zn1−xCdxO semiconductor films with cadmium content x ranging from 0 to 0.23 were obtained on quartz substrate by pulse laser deposited (PLD) technique. X-ray diffraction measurement revealed that all the films were single phase of wurtzite structure grown on c-axis orientation with its c-axis lattice constant increasing as the Cd content x increasing. Atomic force microscopy observation revealed that the grain size of Zn1−xCdxO films decreases continuously as the Cd content x increases. Both photoluminescence and optical measurements showed that the band gap decreases from 3.27 to 2.78 eV with increasing the Cd content x. The increase in Cd content x also leads to the broadening of the emission peak. The resistivity of Zn1−xCdxO films decreases evidently for higher values of Cd content x. The shift of PL emission to visible light as well as the decrease of resistivity makes the Zn1−xCdxO films potential candidate for optoelectronic device.  相似文献   

2.
A series of ZnO1−xSx alloy films (0 ≤ x ≤ 1) were grown on quartz substrates by radio-frequency (rf) magnetron sputtering of ZnS ceramic target, using oxygen and argon as working gas. X-ray diffraction measurement shows that the ZnO1−xSx films have wurtzite structure with (0 0 2) preferential orientation in O-rich side (0 ≤ x ≤ 0.23) and zinc blende structure with (1 1 1) preferential orientation in S-rich side (0.77 ≤ x ≤ 1). However, when the S content is in the range of 0.23 < x < 0.77, the ZnO1−xSx film consists of two phases of wurtzite and zinc blende or amorphous ZnO1−xSx phase. The band gap energy of the films shows non-linear dependence on the S content, with an optical bowing parameter of about 2.9 eV. The photoluminescence (PL) measurement reveals that the PL spectrum of the wurtzite ZnO1−xSx is dominated by visible band and its PL intensity and intensity ratio of UV to visible band decrease greatly compared with undoped ZnO. All as-grown ZnO1−xSx films behave insulating, but show n-type conductivity for w-ZnO1−xSx and maintain insulating properties for β-ZnO1−xSx after annealed. Mechanisms of effects of S on optical and electrical properties of the ZnO1−xSx alloy are discussed in the present work.  相似文献   

3.
BiFeO3/Zn1−xMnxO (x = 0-0.08) bilayered thin films were deposited on the SrRuO3/Pt/TiO2/SiO2/Si(1 0 0) substrates by radio frequency sputtering. A highly (1 1 0) orientation was induced for BiFeO3/Zn1−xMnxO. BiFeO3/Zn1−xMnxO thin films demonstrate diode-like and resistive hysteresis behavior. A remanent polarization in the range of 2Pr ∼ 121.0-130.6 μC/cm2 was measured for BiFeO3/Zn1−xMnxO. BiFeO3/Zn1−xMnxO (x = 0.04) bilayer exhibits a highest Ms value of 15.2 emu/cm3, owing to the presence of the magnetic Zn0.96Mn0.04O layer with an enhanced Ms value.  相似文献   

4.
The band structure and optical properties of the CdSexTe1−x ternary mixed crystals have been studied using the pseudopotential formalism under an improved virtual crystal approximation approach. Quantities such as, energy gaps, band-gap bowing parameters, electron effective mass and dielectric constants are calculated. Our results agree well with the available data in the literature. The composition dependence of all studied quantities has been expressed by quadratic polynomial forms.  相似文献   

5.
Bi5GexSe95−x (30, 35, 40 and 45 at.%) thin films of thickness 200 nm were prepared on glass substrates by the thermal evaporation technique. The influence of composition and annealing temperature, on the structural and electrical properties of Bi5GexSe95−x films was investigated systematically using X-ray diffraction (XRD), energy dispersive X-ray analysis (EDX). The XRD patterns showed that the as-prepared films were amorphous in nature with few tiny crystalline peaks of relatively low intensity for 30 and 45 at.% and the Bi5Ge40Se55 annealed film was polycrystalline. The chemical composition of the Bi5Ge30Se65 film has been checked using energy dispersive X-ray spectroscopy (EDX). The electrical conductivity was measured in the temperature range 300-430 K for the studied compositions. The effect of composition on the activation energy (ΔE) and the density of localized states at the Fermi level N(EF) were studied, moreover the electrical conductivity was found to increase with increasing the annealing temperature and the activation energy was found to decrease with increasing the annealing temperature. The results were discussed on the basis of amorphous-crystalline transformations.  相似文献   

6.
Bulk InxSe1−x (with x=5-25 at%) glasses were prepared using the melt-quench technique. Short range order(SRO) was examined by the X-ray diffraction using Cu(kα) radiation in the wave vector interval 0.28≤k≤6.5 A0−1.The SRO parameters have been obtained from the radial distribution function. The inter-atomic distance obtained from the first and second peak are r1=0.263 and r2=0.460 nm, which is equivalent In-Se and Se-Se bond length. The fundamental structural unit for the studied glasses is In2Se3 pyramid. Using the differential scanning calorimetry (DSC), the crystallization mechanism of InxSe1−x chalcogenide glass has been studied. The glass transition activation energy (Eg) is 289±0.3 kj/mol.There is a correlation amongst the glass forming ability, bond strength and the number of lone pair electrons. The utility of the Gibbs-Di Marzio relation was achieved by estimating Tg theoretically.  相似文献   

7.
We have deposited germanium carbide (Ge1−xCx) films on Si(1 0 0) substrate via radio-frequency (RF) reactive magnetron sputtering in a CH4/Ar mixture discharge, and explored the effects of carbon content (x) on the chemical bonding and hardness for the obtained films. We find that x significantly influences the chemical bonding, which leads to a pronounced change in the hardness of the film. To reveal the relationship between the chemical bonding and hardness, first-principles calculations have been carried out. It is shown that as x increases from 0 to 0.33, the fraction of sp3 C-Ge bonds in the film increases at the expense of Ge-Ge bonds, which promotes formation of a strong covalently bonded network, and thus enhances the hardness of the film. However, as x further increases from 0.33 to 0.59, the fraction of sp3 C-Ge bonds in the film gradually reduces, while that of sp3 C-H and graphite-like sp2 C-C bonds increases, which damages the compact network structure, resulting in a sharp decrease in the hardness. This investigation suggests that the medium x (0.17<x<0.40) is most favorable to the preparation of hard Ge1−xCx films due to the formation of dominant sp3 C-Ge bonds.  相似文献   

8.
Thin films of samples of the glassy SxSe100−x system with 0 ≤ x ≤ 7.28 have been prepared by thermal evaporation technique at room temperature (300 K). X-ray investigations show that the structure of pure selenium (Se) does change seriously by the addition of small amount of sulphur S ≤7.28%. The lattice parameters were determined as a function of sulphur content. Results of differential thermal analysis (DTA) of the glassy compositions of the system SxSe100−x were discussed. The characteristic temperatures (Tg, Tc and Tm) were evaluated. Dark electrical resistivities, ρ, of SxSe100−x thin films with different thicknesses from 100 to 500 nm, were measured in the temperature range from 300 to 423 K. Two distinct linear parts with different activation energies were observed. The variation of electrical resistivity of examined compositions has been discussed as a function of the film thickness, temperature and the sulphur content. The application of Mott model for the phonon assisted hopping of small polarons gave the same two activation energies obtained from the resistivity temperature calculations.  相似文献   

9.
This work is concerned with the dependence of the electronic energy band structures for GaAs1−xPx alloys on temperature and pressure that is based on local empirical pseudo-potential method. The band structures of GaAs1−xPx alloys were calculated in the virtual crystal approximation using the EPM which incorporates compositional disorder as an effective potential.  相似文献   

10.
The index dispersion at UV–VIS range for polycrystalline MgxZn1−xO films on silicon with different Mg concentration was obtained by spectroscopic ellipsometry (SE) method. It decreases with the increase of the Mg content. Above the relative peak wavelength, they are well fitted by the first-order Sellmeier relation. The band gap of films on sapphire of different Mg content was determined from transmission measurements. Photoluminescence (PL) illustrated that for MgxZn1−xO films every PL peak corresponded to a special excitation wavelength. The wavelength of the PL peak was proportional to the special excitation wavelength. A strong peak was obtained in the blue band for the films due to the large amount of oxygen vacancies caused by excess Zn and Mg atoms, while weak peak at ultraviolet band.  相似文献   

11.
A series of CdxZn1−xS thin films have been deposited on glass substrates using spray pyrolysis technique. The crystallinity and microstructure of CdxZn1−xS thin films have been investigated by X-ray diffraction (XRD). Based on the results of Hall measurements, the films obtained were an n-type semiconductor. The X-ray data analysis of CdxZn1−xS thin films showed that the grain size of the CdxZn1−xS increased with increase in Cd composition. It is observed that the band gap increases as the Cd composition decreases. The results also showed a blue shift of absorption edge of optical transmission spectra is increases as Zn ratio increases. The effects of Cd composition on the structural and optical properties of CdxZn1−xS thin films were related to their grain size, stress and carrier concentration.  相似文献   

12.
Intense red phosphors, AgGd1−xEux(W1−yMoy)2O8 (x=0.0-1.0, y=0.0-1.0), have been synthesized through traditional solid-state reaction and characterized by X-ray diffraction (XRD) and photoluminescence (PL). XRD results reveal that AgGd1−xEuxW2O8 synthesized at 1000 °C has a tetragonal crystal structure, which is named as high temperature phase (HTP) AgGdW2O8. All phosphors compositions with Eu3+ show red and green emission on excitation either in the charge-transfer or Eu3+ levels. Analysis of the emission spectra with different Eu3+ concentrations reveal that the optimum dopant concentration for Eu3+ is x=0.6 in the HTP AgGd1−xEuxW2O8 (x=0.0-1.0). Studies on the AgGd0.4Eu0.6(W1−yMoy)2O8 (y=0.0-1.0) and AgGd1−xEux(W0.7Mo0.3)2O8 (x=0.0-1.0) show that the emission intensity is maximum for compositions with y=0.3 and x=0.5, respectively, and a decrease in emission intensity is observed for higher y or x values. The Mo6+ and Eu3+ co-doped AgGd(WO4)2 phosphors show higher emission intensity in comparison with the singly Eu3+-doped AgGd(WO4)2 in UV region. The intense emission of the tungstate/molybdate phosphors under 394 and 465 nm excitations, respectively, suggests that these materials are promising candidates as red-emitting phosphors for near-UV/blue GaN-based white LED for white light generation.  相似文献   

13.
Bismuth layer-structured (Bi7−xSrx)(Fe3−xTi3+x)O21 (BSFT) ceramics were synthesized and the ferroelectric properties and crystal structure were investigated. X-ray powder diffraction profiles and refinement of the lattice parameters indicated single phase BSFT was obtained in the composition range 0-1.5. The lattice parameter b of BSFT remained almost constant, while a slight decrease in the lattice parameter a was observed by the Sr and Ti substitution for Bi and Fe, respectively, which indicated an increase in the orthorhombicity. The dependence of the BSFT lattice parameter on temperature implied a phase transition from the orthorhombic to the tetragonal phase, which was in good agreement with the Curie temperature. The remnant polarization Pr, of BSFT was significantly improved by the Sr and Ti substitution for Bi and Fe, and ranged from 9 to 16 μC/cm2, although no remarkable variation in the coercive field Ec was observed. As a result, a well-saturated P-E hysteresis loop of BSFT ceramic was obtained at x=0.5 with a Pr of 30 μC/cm at an applied voltage of 280 kV/cm.  相似文献   

14.
We investigated the hardness enhancement in titanium carbonitrides (TiCxN1−x) by the population analysis method based on first-principles calculations. Populations for bonds TiC and TiN in TiCxN1−x (0.25<x<0.75) are all positive. The enhanced hardness for titanium carbonitrides is well explained by overlap population analysis. Intrinsic hardness of TiCxN1−x has been calculated based on the obtained overlap populations. The calculated results are in good agreement with the available experimental data.  相似文献   

15.
MgxZn1−xO alloy films were prepared on sapphire substrates using Ar and N2 as the sputtering gases. The effect of the sputtering gas on the structural, optical and electrical properties of the MgxZn1−xO films was studied. By using N2 as the sputtering gas, the MgxZn1−xO film shows p-type conductivity and the band gap is larger than that employing Ar as the sputtering gas. The reason for this phenomenon is thought to be related to the reaction between N-O or N-Zn, and the N-doping.  相似文献   

16.
Herein is a report of a study on a Cd1−xZnxS thin film grown on an ITO substrate using a chemical bath deposition technique. The as-deposited films were annealed in air at 400 °C for 30 min. The composition, surface morphology and structural properties of the as-deposited and annealed Cd1−xZnxS thin films were studied using EDX, SEM and X-ray diffraction techniques. The annealed films have been observed to possess a crystalline nature with a hexagonal structure. The optical absorption spectra were recorded within the range of 350-800 nm. The band gap of the as-deposited thin films varied from 2.46 to 2.62 eV, whereas in the annealed film these varied from 2.42 to 2.59 eV. The decreased band gap of the films after annealing was due to the improved crystalline nature of the material.  相似文献   

17.
Zn1−xCoxO thin films with c-axis preferred orientation were deposited on sapphire (0 0 0 1) by pulsed laser deposition (PLD) technique at different substrate temperatures in an oxygen-deficient ambient. The effect of substrate temperature on the microstructure, morphology and the optical properties of the Zn1−xCoxO thin films was studied by means of X-ray diffraction (XRD), atomic force microscopy (AFM), UV-visible-NIR spectrophotometer, fluorescence spectrophotometer. The results showed that the crystallization of the films was promoted as substrate temperature rose. The structure of the samples was not distorted by the Co incorporating into ZnO lattice. The surface roughness of all samples decreased as substrate temperature increased. The Co concentration in the film was higher than in the target. Emission peak near band edge emission of ZnO from the PL spectra of the all samples was quenched because the dopant complexes acted as non-radiative centers. While three emission bands located at 409 nm (3.03 eV), 496 nm (2.5 eV) and 513 nm (2.4 eV) were, respectively, observed from the PL spectra of the four samples. The three emission bands were in relation to Zn interstitials, Zn vacancies and the complex of VO and Zni (VOZni). The quantity of the Zn interstitials maintained invariable basically, while the quantity of the VOZni slightly decreased as substrate temperature increased.  相似文献   

18.
We report the growth of cubic MgxZn1−xO alloy thin films on quartz by electron beam evaporation. It can be found that all the samples have sharp absorption edges by the absorption measurements. X-ray diffraction measurements indicate the MgxZn1−xO films are cubic phase with preferred orientation along the (1 1 1) direction. Energy dispersive spectrometry (EDS) demonstrates that the Mg concentration in MgxZn1−xO films is much higher than the ceramic target used, and the composition can be tuned in a small scope by varying the substrate temperature and the beam electric current. The reasons of this phenomenon are also discussed.  相似文献   

19.
Based on the pseudopotential method under the virtual crystal approximation that takes into account the effect of compositional disorder, the electron and heavy-hole effective masses and the dielectric constants in GaxIn1−xAs (0≤x≤1) have been calculated. The results are firstly used in the Wannier equation, which allowed the determination of the exciton reduced mass, binding energy and Bohr radius; then, the polaron properties have been investigated. In this respect, the Fröhlich coupling parameter, Debye temperature and polaron effective mass are calculated and their dependence on the Ga concentration is examined. For InAs and GaAs, our results are generally in reasonable agreement with the known data in the literature, while for compositions x in the range 0-1, our treatment represents the first theoretical predictions. It is found that the exciton and polaron properties for compositions 0<x<1 differ from those of the parent compounds suggesting thus more diverse opportunities to describe most exciton and polaron properties in ternary mixed crystals of interest.  相似文献   

20.
The structural and optical properties of an InxGa1−xN/GaN multi-quantum well (MQW) were investigated by using X-ray diffraction (XRD), atomic force microscopy (AFM), spectroscopic ellipsometry (SE) and photoluminescence (PL). The MQW structure was grown on c-plane (0 0 0 1)-faced sapphire substrates in a low pressure metalorganic chemical vapor deposition (MOCVD) reactor. The room temperature photoluminescence spectrum exhibited a blue emission at 2.84 eV and a much weaker and broader yellow emission band with a maximum at about 2.30 eV. In addition, the optical gaps and the In concentration of the structure were estimated by direct interpretation of the pseudo-dielectric function spectrum. It was found that the crystal quality of the InGaN epilayer is strongly related with the Si doped GaN layer grown at a high temperature of 1090 °C. The experimental results show that the growth MQW on the high-temperature (HT) GaN buffer layer on the GaN nucleation layer (NL) can be designated as a method that provides a high performance InGaN blue light-emitting diode (LED) structure.  相似文献   

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