Vortex lattice ordering in the flux flow state of Nb thin films

We measure current–voltage characteristics at high driving currents for different magnetic fields and temperatures in Nb thin films of rather strong pinning. In a definite range of the B–T phase diagram we find that a current induced transition occurs in the flux flow motion of the vortex lattice, namely a dynamic ordering (DO). Contrary to the case of weaker pinning materials, DO is observed only at low fields, due to the stronger intrinsic disorder that can deform plastically the moving vortex lattice even for small applied fields.     

Commensurability effects in magnetic properties of superconducting Nb thin films with periodic submicrometric pores

Pinning properties in 100 nm thick continuous and porous superconducting Nb films are examined by ac susceptibility and dc magnetization measurements. The Nb film was deposited on a smooth Si substrate, while the porous film, Nb_P, was deposited on an anodized Al oxide substrate. Pores or “antidots” 40 nm in diameter, 100 nm apart, form a triangular array. The porous film presents commensurate or matching field effects for applied magnetic fields where the magnetic flux threading each unit cell is an integer number of the flux quantum, where ac shielding capability and dc diamagnetic magnetization show an abrupt increase. The response to ac fields as a function of temperature and dc field provided a way to determine that Nb_P sample has higher pinning than the continuous one, and that T_C suppression due to fluxoid quantization is not relevant for the investigated temperature range.     

Vortex pinning in superconducting Nb thin films deposited on nanoporous alumina templates

We present a study of magnetization and transport properties of superconducting Nb thin films deposited on nanoporous aluminium oxide templates. Periodic oscillations in the critical temperature vs. field, matching effects in fields up to 700 mT and strongly enhanced critical currents were observed. These fields are considerably higher than those typical for periodic pinning arrays made by lithographic techniques, which reflects the benefits of nanostructuring superconductors by using self-organized growth. This method provides a periodic pinning potential with sub-100 nm spacing between the pinning centers, which enhances vortex pinning in broad field and temperature ranges.     

Pinning effects on the vortex critical velocity in type-II superconducting thin films

We study the influence of artificial pinning centers on the vortex critical velocity in Al thin films deposited on top of a periodic array of Permalloy (FeNi) square rings. We demonstrate that the field dependence of the flux flow velocity strongly depends on the particular magnetic state of the rings. In particular, we find that, even when the rings are in a flux closure state, i.e. with little stray field, the vortex critical velocity shows a non-monotonic magnetic field dependence. This behaviour is in sharp contrast with the results obtained in a reference plain film, with no rings underneath. A comparison with the intrinsic strong pinning Nb films previously studied, suggests an interpretation in terms of a channel-like motion of vortices, here induced by the artificial pinning structure.     

Hall effect and pinning regimes in thin films doped with nanoparticles

Hall effect and flux pinning in YBa₂Cu₃O_6+x (YBCO) thin films doped with BaZrO₃ (BZO) nanoparticles is investigated. The results show that sign reversal of the Hall coefficient from positive hole-like to negative electron-like occurs in vortex-liquid regime of undoped and BZO-doped YBCO films. With increasing BZO concentration the amplitude of the negative Hall effect is suppressed while the temperature position of the anomalous Hall effect does not depend significantly on doping level. In addition, it is shown that Hall conductivity increases non-monotonically with increasing BZO doping. These results support a model where BZO at low doping concentration induces point pinning centres turning to strong columnar pinning defects in films doped with 4% BZO.     

Effects of surface damage on critical current density in MgB2 thin films

We investigated the influence of surface damage on the critical current density (J_c) of MgB₂ thin films via 140-keV Co-ion irradiation. The J_c(H) of the surface-damaged MgB₂ films was remarkably improved in comparison with that of pristine films. The strong enhancement of J_c(H) caused by a surface damage in MgB₂ films can be ascribed to additional point defects along with an atomic lattice displacement introduced through low-energy Co-ion irradiation, which is consistent with the change in the pinning mechanism, from weak collective pinning to strong plastic pinning. The irreversible magnetic field (H_irr) at 5 K for surface-damaged MgB₂ films with a thickness of 850 and 1300 nm was increased by a factor of approximately 2 compared with that of a pristine film. These results show that the surface damage produced by low energy ion irradiation can serve as an effective pinning source to improve J_c(H) in a MgB₂ superconductor.     

Temporal chaotic behaviour of vortex motion in a type-II superconductors with periodically-distributed pinning centres

Temporal chaotic character of vortex motion in systems where defects are arranged in periodic arrays has been investigated by computer simulation. Due to the high nonlinearity of the vortex–defect interaction, the temporal evolution of the vortex motion is chaotic with a power spectrum similar to what have been observed in the experiments. It is found that the strength of both the vortex–vortex and vortex–defect interactions have no significant effects on the chaotic motion of the vortices, however, the mismatch between these two interactions causes attractor crisis of the system. Different from them, the Lorentz force is not the origin of the attractor crisis, but it causes a divergent motion of the vortex (i.e., the flux flow).     

In-plane magnetoresistance of electron-doped superconducting thin films Pr0.9LaCe0.1CuO4

We measured the in-plane magnetoresistance of Pr_0.9LaCe_0.1CuO₄ (PLCCO) epitaxial thin films under various magnetic fields H applied parallel to the tetragonal c-axis. The measurements were performed at the superconducting state as well as the normal state. As the magnetic field is between the low critical field H_c1 and upper critical field H_c2, a critical scaling behavior of electrical resistivity is found. We analyze the electrical transport properties and show the magnetic field H dependence of glass transition temperature T_g and the characteristic temperature T^* for the PLCCO film, which may shed some light on vortex behavior in electron-doped superconductors.     

Crystal orientation dependence of the critical current density in a-axis- and c-axis-oriented MgB2 films

We have investigated the critical current density for MgB₂ films having various crystal orientations prepared by using a hybrid physical-chemical vapor deposition system. An enhancement of the critical current density is clearly presented in MgB₂ films with an a-axis or a b-axis orientation rather than a c-axis orientation. X-ray diffraction patterns reveal a suppression of c-axis orientations while a (100) orientation becomes dominant, and the surface morphology of the a-axis-oriented film shows that the orientation of the c-axis-oriented MgB₂ grains parallel to the plane of the substrate. As the a-axis orientation becomes more dominant in the MgB₂ films, the field performance of the critical current density clearly becomes better. These results suggest that the synthesis of MgB₂ with high ab-plane orientations is one of the keys to enhancing the critical current density in MgB₂.     

高压下 MgB2 超导的涡旋动力学研究*

我们首次通过磁弛豫的方法系统研究了高压下 MgB2 样品的磁通钉扎以及涡旋动力学, 测量了其在不同温度和磁场下的磁化强度 M 随时间t 的衰变, 即 M(t) . 根据集体蠕动理论, 明确了高压效应在低磁场时抑制了磁衰变速率, 但在高场下大大的加快了磁衰变. 高压降低了临界电流密度J c 和钉扎能. 另外, 在 MgB2 样品里低场下没有观测到弹性蠕变向塑性蠕变的转变.     

Multicolor photon emission from organic thin films on different substrates

Thin films of 1-pentyl-2^/,3^/-difluoro-3^///-methyl-4^////-octyl-p-quinquephenyl and 9,10-Bis (4-pentylphenylethynyl)antracene organic molecules were grown on optical glass, silicon and porous silicon substrates. First optical and luminescent properties of such hybrid composites are thoroughly studied using spectroscopic techniques. The strong decrease of aggregation in thin films of 1-pentyl-2^/,3^/-difluoro-3^///-methyl-4^////-octyl-p-quinquephenyl on porous silicon was observed. The possibility of simultaneous red, green and blue tunable photon emission from organic film/porous silicon hybrid structure is demonstrated.     

Magnetic properties of thin epitaxial Gd films on Nb

We investigated the magnetic properties of Gd films by magnetization measurements with the transverse magnetooptic Kerr effect in the temperature range from 2 to 295 K and for magnetic field up to 0.3 T. The thicknessd _Gd of the Gd films was varied between 11 and 1000 Å. For thick films (d _Gd500 Å) the form of the hysteresis curves and especially the nonmonotonic temperature dependence of remanence and coercivity can be qualitatively reproduced with a simple model employing theT dependence of the easy-axis direction. TheT dependence of the saturation magnetizationM _s of the thick films (d _Gd>=150 Å) strongly resembles the behavior of bulk crystals, whereas for the thinnest filmsM _s approximately depends linearly onT up to the Curie temperatureT _C . The thickness dependence ofT _C follows approximately a power law with an exponent 1.6 close to the theoretical value.     

Simulation study for the orientation of the driven vortex lattice in an amorphous superconductor

We investigate the orientation of the vortex lattice driven by an applied current by means of numerical simulations based on the time-dependent Ginzburg–Landau (TDGL) theory. A lattice order is restored by a current driving of vortices under the influence of random vortex pinnings. The orientation of the moving vortex lattice is different between the presence and the absence of vortex pinnings. We show results of TDGL simulations for these phenomena.     

Transport and dielectric properties of thin polycrystalline CoO films

Transport and dielectric properties of polycrystalline CoO films were studied as functions of the applied field, frequency and temperature. TheI–V plots showed that the Poole-Frenkel field emission mechanism is responsible for conduction at fields>10⁵ V/cm. The ac conductivity σ(ω), the imaginary part of the dielectric constantε ₂, and tan δ plots as functions of frequency revealed three dispersion regions. The σ(ω) andε ₂ frequency dependence indicates a non-adiabatic hopping of charge carriers at low frequencies and adiabatic hopping at high frequencies. The activation energy of a dielectric oscillator is 0.15 eV. Work supported by the Office of Naval Research.     

Structural and optical properties study of nanocrystalline Si (nc-Si) thin films deposited on porous aluminum by plasma enhanced chemical vapor deposition

In this paper we report detail investigation and correlation between micro-structural and optical properties of nanocrystalline silicon (nc-Si) deposited by plasma enhancement chemical vapor deposition (PECVD) on porous aluminum structure. The influence of the microstructure of the nc-Si thin films on their optical properties was investigated through an extensive characterization. The effect of anodisation currents on the microstructure of aluminum surface layer and nc-Si films was systematically studied by atomic force microscopy (AFM) and transmission electron microscopy (TEM), Raman spectroscopy and X-ray diffraction (XRD). The optical constants (n and k as a function of wavelength) of the films were obtained using variable angle spectroscopic ellipsometry (SE) in the UV-vis-NIR regions. The silicon layer (SL) was modeled as a mixture of void, crystalline silicon and aluminum using the Bruggeman approximation. Based on this full characterization, it is demonstrated that the optical characteristics of the films are directly correlated to their micro-structural properties. A very bright photoluminescence (PL) was obtained and find to depend on anodisation current.     

Morphological and optical properties of silicon thin films by PLD

Silicon thin films have been prepared on sapphire substrates by pulsed laser deposition (PLD) technique. The films were deposited in vacuum from a silicon target at a base pressure of 10⁻⁶ mbar in the temperature range from 400 to 800 °C. A Q-switched Nd:YAG laser (1064 nm, 5 ns duration, 10 Hz) at a constant energy density of 2 J × cm⁻² has been used. The influence of the substrate temperature on the structural, morphological and optical properties of the Si thin films was investigated.Spectral ellipsometry and atomic force microscopy (AFM) were used to study the thickness and the surface roughness of the deposited films. Surface roughness values measured by AFM and ellipsometry show the same tendency of increasing roughness with increased deposition temperature.     

Direct visualization of the vortex distributions in a superconducting film with a Penrose array of magnetic pinning centers: Symmetry induced giant vortex state

Using scanning Hall probe microscopy a direct visualization of the flux distribution in a Pb film covering a fivefold Penrose array of Co dots is obtained. We demonstrate that stable vortex configurations can be found for fields H ∼ 0.8H₁, H₁ and 1.6H₁, where H₁ corresponds to one flux quantum per pinning site. The vortex pattern at 0.8H₁ corresponds to one vacancy in one of the vertices of the thin tiles whereas at 1.6H₁ the vortex structure can be associated with one interstitial vortex inside each thick tile. Strikingly, for H = 1.6H₁ interstitial and pinned vortices arrange themselves in ring-like structures (“vortex corrals”) which favor the formation of a giant vortex state at their center.     

Structural and superconducting properties of ion beam sputtered Nb thin films and Nb/Cu bilayers

We present the results of a study of structural and superconducting properties of polycrystalline Nb thin films (200 Å, 300 Å, 400 Å, 700 Å and 1000 Å) and Nb/Cu bilayers (300 Å/300 Å and 400 Å/300 Å) prepared on Si substrates by ion beam sputtering at room temperature. The thicknesses, roughnesses at the surfaces and interfaces were determined by X-ray reflectivity whereas the grain sizes were determined from grazing incidence X-ray diffraction and transmission electron microscopic studies. The superconducting transition temperature (T_C) of Nb thin films are smaller than T_C of bulk Nb. The Nb-200 Å sample does not show T_C down to 2.3 K. The average size of the grains varies from 42 Å for Nb-200 Å sample to 69 Å for Nb-1000 Å sample. Our results show that the T_C in these polycrystalline films is not only limited by its thickness but also by the size of the grains. The Nb films deposited in situ on the Cu layer (Nb/Cu) show a marginal increase in average sizes of the grains as compare to their respective values in Nb films of same thicknesses. As a result a marginal increase in T_C of these films is also observed. The maximum decrease in T_C due to oxygen intake during deposition should be about 0.5 K from its bulk value (9.28 K). We have attributed the large decrease in T_C in our case on the basis of decrease in the Debye temperature and density of states at the Fermi level for Nb thin films as compared to their respective values for bulk Nb.     

A possible role of amorphous regions at grain-boundary vertex points as linear defects on flux pinning in MgB2 films with columnar grain structure

We measured the transport properties of MgB₂ films having columnar grain structure with their axis normal to the substrate. When an external magnetic field was applied parallel to the grain axis, an enhanced critical current density has been observed, and this result has been ascribed to flux pinning induced by grain boundaries. The shape of the angular dependence of critical current density and its magnetic field dependence showed a quite similar resemblance to those of YBa₂Cu₃O_x films containing columnar defects, implying a possible existence of linear defects in MgB₂ films of columnar structure. We propose that the amorphous regions at the vertex points of three or more grain boundaries observed in microstructural studies correspond to the linear defects and these linear defects anchor the end points of the flux line dislocations of Frank-Read sources, by which the shear in the flux line lattice is actuated. This assumed mechanism is found to reasonably explain the magnetic field dependence of the flux pinning force density of MgB₂ films with columnar grain structure.