电化学法涂层导体CeO_2缓冲层外延生长研究

电化学沉积法制备高温超导YBa2Cu3O7-δ涂层导体缓冲层具有工艺简单、设备要求低、易于连续化批量制备等优点。采用电化学沉积法,在双轴织构的Ni-5at.%W(Ni-5W)金属基带上成功制备出了具有良好c轴取向的CeO2缓冲层薄膜。利用X射线衍射、极图、扫描电子显微镜和原子力显微镜等对上述氧化物薄膜的织构、表面形貌等进行表征。重点研究了薄膜厚度、退火温度、退火时间等工艺对薄膜外延生长及其表面形貌的影响,结果表明:电化学沉积方法制备的CeO2缓冲层具有很好的双轴织构、表面平整、均一,粗糙度低,表现出良好的缓冲层性质。结合金属有机化学溶液超导层的制备技术,本工作展示了一条全化学法制备第二代高温超导带材的技术路线,具有很好的应用前景。     

锗基底7～11.5μm高性能红外宽带减反射膜的研究

为了提高锗基底的透过率和膜层的机械强度，对锗基底上高性能的红外宽带减反射膜的设计与制备工艺进行了研究。介绍了红外宽带减反射膜的膜料选择、膜系设计以及采用 离子束辅助沉积该膜系的过程。给出了用该方法制备的7～11.5μm波段宽带减反射膜的实测光谱曲线，其峰值透过率高达99.5％以上，在设计波段范围内平均透过率大于97.5％， 膜层附着性能好，光机性能稳定。这对于红外光学系统的应用具有十分重要的意义。     

Highly flexible transparent and conductive ZnS/Ag/ZnS multilayer films prepared by ion beam assisted deposition

ZnS/Ag/ZnS (ZAZ) multilayer films were prepared on polyethene terephthalate (PET) by ion beam assisted deposition at room temperature. The structural, optical and electrical characteristics of ZAZ multilayers dependent on the thickness of silver layer were investigated. The ZAZ multilayers exhibit a low sheet resistance of about 10 Ω/sq., a high transmittance of 92.1%, and the improved resistance stabilities when subjected to bending. When the inserted Ag thickness is over 12 nm, the ZAZ multilayers show good resistance stabilities due to the existence of a ductile Ag metal layer. The results suggest that ZAZ film has better optoelectrical and anti-deflection characteristics than conventional indium tin oxide (ITO) single layer.     

Effects of assisting and sputtering ion current on ion beam assisted deposition textured yttria stabilized zirconia buffer layers of coated conductors

Biaxially textured yttria stabilized zirconia (0 0 1) thin films were fabricated on untextured hastelloy substrates by ion beam assisted deposition method. The effects of assisting beam current density J_a and sputtering beam current density J_s on the textures of the films were studied. The results indicate that as J_a or J_s increase, both the out-of-plane and the in-plane textures are improved initially, and then degrade. The results can be attributed to anisotropic damage and selective sputtering effect of assisting ions. At the same ion-to-atom arrival ratio r, which is reflected with J_a/J_s value, lower deposition rate can enhance the biaxial texture.     

Optical and electrical properties of Y2O3 thin films prepared by ion beam assisted deposition

Y₂O₃ thin films were deposited by ion beam assisted deposition (IBAD) and the effects of fabrication parameters such as substrate temperature and ion energy on the structure, optical and electrical properties of the films were investigated. The results show that the deposited Y₂O₃ films had less optical absorption, larger refractive index, and better film crystallinity with the increase of substrate temperature or ion energy. The as-deposited Y₂O₃ films without ion-beam bombardment had larger relative dielectric constant (?_r) and the ?_r decreased with time even over by 40%, while the ?_r of films prepared with high ion energy had less changes, only less than 3%. Also, with the increase of ion energy, the electrical breakdown strength and the figure of merit increased.     

用离子束增强沉积从V2O5粉末制备高热电阻温度系数VO_2薄膜

采用了一种用离子束增强沉积从V2O5粉末直接制备VO2薄膜的新方法,将纯度为997%的V2O5粉末压成溅射靶,在用Ar离子束溅射的同时,用氩氢混合束对沉积膜作高剂量离子注入,使沉积膜中V2O5的V—O键断裂,进而被注入的氢还原,退火后获得热电阻温度系数(TCR)高达4%的VO2薄膜.高剂量的氩氢混合束注入对薄膜引入应力,使薄膜的转换温度降低、电阻温度曲线斜率变大,是薄膜TCR增大的原因 关键词： 离子束增强沉积 VO2薄膜 热电阻温度系数     

In-situ growth of a CdS window layer by vacuum thermal evaporation for CIGS thin film solar cell applications

Highly crystalline and transparent CdS films are grown by utilizing the vacuum thermal evaporation （VTE） method. The structural, surface morphological, and optical properties of the films are studied and compared with those prepared by chemical bath deposition （CBD）. It is found that the films deposited at a high substrate temperature （200 ℃） have a preferential orientation along （002） which is consistent with CBD-grown films. Absorption spectra reveal that the films are highly transparent and the optical band gap values are found to be in a range of 2.44 eV-2.56 eV. Culnl_xGaxSe2 （CIGS） solar cells with in-situ VTE-grown CdS films exhibit higher values of Voc together with smaller values of Jsc than those from CBD. Eventually the conversion efficiency and fill factor become slightly better than those from the CBD method. Our work suggests that the in-situ thermal evaporation method can be a competitive alternative to the CBD method, particularly in the physical- and vacuum-based CIGS technology.