Cs2LiGdCl6 (Ce): New scintillation material

We investigated the scintillation properties of Cs₂LiGdCl₆:Ce³⁺ as a function of the Ce concentration. X-ray excited luminescence spectra of the scintillation material showed broad emission bands between 360 and 460 nm, with two overlapping peaks, due to the d→f transitions on Ce³⁺ ions. The samples provide good scintillation results. The energy resolution was found to be 5.0% (FWHM) at 662 keV for 10% Ce sample. Under γ-ray excitation, Cs₂LiGdCl₆:Ce³⁺ showed three exponential decay time components of about 130–200 ns decay time constant. The light output of the investigated samples was 20,000 photons/MeV for a 10% Ce concentration. The light output deviation from the linear response is within 7% between the energy range of 31 and 1333 keV. Overall, the scintillation properties confirm that Cs₂LiGdCl₆:Ce³⁺ single crystal is a promising candidate for medical imaging and radiation detection.     

Optical properties of Cr ion in lithium metasilicate Li2O · SiO2 transparent glass-ceramics

The optical properties of Cr³⁺ ions in lithium metasilicate (Li₂O · SiO₂) transparent glass-ceramics were investigated. The main crystalline phase precipitated was the lithium metasilicate (Li₂O · SiO₂) crystal. The percent crystallinity and crystalline size were ranging 65-75% and 20-35 nm, respectively. The color changes drastically to deep pink from emerald green upon crystallization. New and strong absorption bands appeared and the absorption intensity increases by about 10 times that in glass. These new absorption bands are found to be derived from Cr³⁺ ions in octahedral sites in the lithium metasilicate crystal lattice. Cr³⁺ ions substitute for three Li⁺ ions and occupy the distorted octahedral site between single [SiO₄]_n chains of lithium metasilicate crystal. The ligand field parameters can be estimated: 10Dq = 13 088 cm⁻¹, B = 453 cm⁻¹, Dq/B = 2.89 and C = 2036 cm⁻¹. The near-infrared luminescence centered at 1250 nm was not detected in the deep pink glass-ceramics unlike emerald green glass.     

Crystal growth and spectroscopic properties of erbium doped Lu2SiO5

A high optical quality erbium doped Lu₂SiO₅ single crystal has been grown by the Czochralski method. The distribution coefficient of Er³⁺ was measured to be ∼0.926. The absorption and emission spectra as well as the fluorescence decay curve of the excited state ⁴I_13/2 were measured at room temperature. The spectroscopic parameters were calculated using the Judd–Ofelt theory, and the J–O parameters Ω₂, Ω₄ and Ω₆ were found to be 4.451×10^-20, 1.614×10^-20 and 1.158×10^-20 cm², respectively. The room-temperature fluorescence lifetime of the Er³⁺⁴I_13/2→⁴I_15/2 transition was measured to be 7.74 ms. The absorption and emission cross-section as well as the gain cross-section in the eye-safe regime of 1400–1700 nm were also determined and discussed.     

Preparation and optical properties of nanoscale MgAl2O4 powders doped with Co ions

Co²⁺-doped MgAl₂O₄ nanocrystalline powders were prepared by co-precipitation method. The gels and/or calcined samples were characterized by means of thermogravimetry and differential scanning calorimetry (TG/DSC), X-ray diffraction (XRD), transmission electron microscope (TEM), Fourier transform infrared (FTIR) spectrum and near-infrared absorption spectrum. MgAl₂O₄ nanocrystals were produced by calcining the gel above 800 °C, with the crystallite size of 10-30 nm in the temperature range of 800-1100 °C. The influence of pH value of precipitant solution on the dispersing of powders was studied and the result showed that Co:MgAl₂O₄ nanocrystalline powders exhibited good dispersion when pH = 11. The absorption spectrum of Co²⁺-doped MgAl₂O₄ exhibited a broad absorption band in the wavelength range of 1200-1600 nm, which indicated that Co²⁺ ions substituted for the tetrahedrally coordinated Mg²⁺ ions in the MgAl₂O₄ lattice.     

YAl3(BO3)4: Crystal growth and characterization

The growth and characterization of YAl₃(BO₃)₄ (YAB), a potential nonlinear optical crystal for the fourth harmonic generation of Nd:YAG laser, was reported. Using top-seeded solution growth method, a YAB crystal with the dimensions of 16×16×18 mm³ was obtained from B₂O₃–Li₂O flux system. The advantages of this flux system and the growth process were discussed in detail. The as-grown YAB crystal was verified by powder X-ray diffraction. The transparency spectra indicated that the cut-off edge of the as-grown YAB was 170 nm. The fourth harmonic generation of a frequency doubled Nd:YAG laser, from 532 to 266 nm, was carried out with a YAB crystal doubler for the first time. Output pulse power obtained was 2.4 mW at 266 nm and the conversion efficiency from 532 to 266 nm was about 15.6%.     

Structure and growth morphology of Gd2O3-doped CeO2 thin films

Gd₂O₃-doped CeO₂ (Gd_0.1Ce_0.9O_1.95, GDC) thin films were synthesized on (1 0 0) Si single crystal substrates by a reactive radio frequency magnetron sputtering technique. Structures and surface morphologies were characterized by X-ray diffraction (XRD), Atomic Force Microscopy (AFM) and one-dimensional power spectral density (1DPSD) analysis. The XRD patterns indicated that, in the temperature range of 200–700 °C, f.c.c. structured GDC thin films were formed with growth orientations varying with temperature—random growth at 200 °C, (2 2 0) textures at 300–600 °C and (1 1 1) texture at 700 °C. GDC film synthesized at 200 °C had the smoothest surface with roughness of R_rms=0.973 nm. Its 1DPSD plot was characterized with a constant part at the low frequencies and a part at the high frequencies that could be fitted by the f^−2.4 power law decay. Such surface feature and scaling behavior were probably caused by the high deposition rate and random growth in the GDC film at this temperature. At higher temperatures (300–700 °C), however, an intermediate frequency slope (−γ₂≈−2) appeared in the 1DPSD plots between the low frequency constant part and the high frequency part fitted by f⁻⁴ power law decay, which indicated a roughing mechanism dominated by crystallographic orientation growth that caused much rougher surfaces in GDC films (R_rms>4 nm).     

Crystal growth of KInO2 from a hydroxide flux

Single crystals of KInO₂ were obtained from a reactive potassium hydroxide flux at 700 °C. KInO₂ crystallizes in the R-3m crystal system with a=3.2998(10) Å, c=18.322(10) Å and V=172.78(12) Å³. The crystal structure is isotypic with that of α-NaFeO₂ and consists of the (1 1 1) layers being occupied alternately by KO₆ and InO₆ octahedra. Three different AInO₂ structure types are discussed.     

Submicron rectangular hollow tube crystals of rutile-type GeO2

Single crystals of rutile-type GeO₂ having a structure equivalent to that of TiO₂, a well-known photocatalyst, have been grown for the first time in supercritical oxygen at approximately 5 GPa and 3000 K. The obtained crystals exhibit a rectangular hollow tube structure with submicron size (cross section with sides of ∼500 nm, wall thickness of ∼20 nm, and longitudinal length of ∼5 μm). These single crystals were grown within 1 s and along the c-axis surrounded by the (1 1 0) faces. The crystal growth mechanism strongly depends on the growth mechanism of rutile-type oxides, and the extremely short growing time is an important factor in the formation of hollow tube crystals.     

Room-temperature template-free synthesis of dumbbell-like SrSO4 with hierarchical architecture

Novel dumbbell-like SrSO₄ with hierarchical architecture was fabricated with a facile template-free aqueous solution method at room temperature. The crystallographic morphology of SrSO₄ products depends mainly on the pH value of the reaction solution. The SrSO₄ products exhibit a dumbbell-like hierarchical architecture at pH=3 and 5, and have a tablet-like crystallographic morphology at pH=1 when keeping other reaction parameters unchanged. The dumbbell-like SrSO₄ synthesized at pH=3 has a length of 8–14 μm, and is composed of numerous well-aligned single crystalline nanoplates with an average width of 140 nm and a length of 0.7–1 μm. The Brunauer–Emmett–Teller (BET) surface area of the crystallized SrSO₄ products is about 2.8 m² g⁻¹. A formation mechanism is proposed for the evolution process of dumbbell-like SrSO₄ with hierarchical architecture.     

Growth and microstructural features of laser ablated LiCoO2 thin films

Thin films of LiCoO₂ were prepared by pulsed laser deposition technique and the properties were studied in relation to the deposition parameters. The films deposited from a sintered composite target (LiCoO₂+Li₂O) in an oxygen partial pressure of 100 mTorr and at a substrate temperature of 300 °C exhibited preferred c-axis (0 0 3) orientation perpendicular to the substrate surface. The AFM data demonstrated that the films are composed of uniform distribution of fine grains with an average grain size of 80 nm. The grain size increased with an increase in substrate temperature. The (0 0 3) orientation decreased with increase in (1 0 4) orientation for the films deposited at higher substrate temperatures (>500 °C) indicating that the films’ growth is parallel to the substrate surface. The composition of the experimental films was analyzed using X-ray photoelectron spectroscopy (XPS). The binding energy peaks of Co(2p_3/2) and Co(2p_1/2) are, respectively, observed at 779.3 and 794.4 eV, which can be attributed to the Co³⁺ bonding state of LiCoO₂. The electrochemical measurements were carried out on Li//LiCoO₂ cells with a lithium metal foil as anode and LiCoO₂ film as cathode of 1.5 cm² active area using a Teflon home-made cell hardware. The Li//LiCoO₂ cells were tested in the potential range 2.6-4.2 V. Specific capacity as high as 205 mC/cm² μm was measured for the film grown at 700 °C. The growth of LiCoO₂ films were studied in relation to the deposition parameters for their effective utilization as cathode materials in solid-state microbattery application.     

Growth and scintillation properties of the Na2W2O7 crystal

The growth and scintillation properties of the Na₂W₂O₇ crystal are reported. The solid reaction between Na₂CO₃ and WO₃ is used to synthesise the Na₂W₂O₇ material. The Na₂W₂O₇ single crystal has been grown by the Bridgman method. And the Na₂W₂O₇ single crystal with sizes 14×7×6 mm³ has been achieved. The transmission spectra, the Ultraviolet fluorescence spectra and the X-ray excited luminescence spectra of the Na₂W₂O₇ crystal are measured. The measurement results show that the Na₂W₂O₇ crystal is a promising intrinsic scintillator.     

Thermal-induced phase transition and assembly of hexagonal metastable In2O3 nanocrystals: A new approach to In2O3 functional materials

This paper reports on the thermal-induced performance of hexagonal metastable In₂O₃ nanocrystals involving in phase transition and assembly, with particular emphasis on the assembly for the preparation of functional materials. For In₂O₃ nanocrystals, the metastable phase was found to be thermally unstable and transform to cubic phase when temperature was higher than 600 °C, accompanied by assembly as well as evolution of optical properties, but the two polymorphs coexisted at the temperature ranging from 600 to 900 °C, during which the content of product phase and crystal size gradually increased upon increasing temperature. The assembly of In₂O₃ nanocrystals can be developed to fabricate In₂O₃ functional materials, such as various ceramic materials, or even desired nano- or micro-structures, by using metastable In₂O₃ nanocrystals as precursors or building blocks. The electrical resistivity of In₂O₃ conductive film fabricated by a hot-pressing route was as low as 3.72×10⁻³ Ω cm, close to that of In₂O₃ single crystal, which is important for In₂O₃ that is always used as conductive materials. The findings should be of importance for both the wide applications of In₂O₃ in optical and electronic devices and theoretical investigations on crystal structures.     

Crystallization kinetics of the Zr61Al7.5Cu17.5Ni10Si4 alloy using isothermal DSC and TEM observation

The crystallization behavior and microstructure development of the Zr₆₁Al_7.5Cu_17.5Ni₁₀Si₄ alloy during annealing were investigated by isothermal differential scanning calorimetry, X-ray diffractometry and transmission electron microscopy. During isothermal annealing of the Zr₆₁Al_7.5Cu_17.5Ni₁₀Si₄ alloy at 703 K, Zr₂Cu crystals with an average size of about 5 nm were first observed during the early stages (30% crystallization) of crystallization by TEM. The Zr₂Cu crystal size increased with annealing time and attained an average size of 20 nm corresponding to the stage of 80% crystallization. In addition, the change in particle size with increasing annealing time exhibited a linear relationship between grain growth time and the cube of the particle size for the Zr₂Cu type crystalline phase. This indicates that the crystal growth of the Zr₆₁Al_7.5Cu_17.5Ni₁₀Si₄ alloy belongs to a thermal activated process of the Arrhenius type. The activation energy for the grain growth of Zr₂Cu is 155 ± 20 kJ/mol in the Zr₆₁Al_7.5Cu_17.5Ni₁₀Si₄ amorphous alloy. The lower activation energy for grain growth in compared to that for crystallization in Zr₆₅Cu₃₅ 440 kJ/mol crystal corresponds to the rearrangement of smaller atoms in the metallic glass, Al or Si (compare to Zr).     

Spectroscopic properties of Er-doped Na2O-Sb2O3-B2O3-SiO2 glasses

Spectroscopic properties of Er³⁺-doped Na₂O-Sb₂O₃-B₂O₃-SiO₂ glasses have been investigated for developing 1.5-μm broadband fiber amplifiers. An intense 1.5-μm near infrared emission with a broad full width at half maximum (FWHM) of 88 nm has been obtained for Er³⁺-doped 5Na₂O-20Sb₂O₃-35B₂O₃-40SiO₂ glass upon excitation with a 980 nm laser diode. The obtained emission cross-section of the ⁴I_13/2 → ⁴I_15/2 transition and the lifetime of the ⁴I_13/2 level of Er³⁺ ions are 6.8 × 10⁻²¹ cm² and 0.36 ms, respectively. It is noted that the product of the emission cross-section and the FWHM of the glass, σ_e × FWHM, is as great as 598.4 × 10⁻²¹ cm² nm, which is comparable or higher than that of Er³⁺-doped bismuth-based and tellurite-based glasses. These special optical properties encourage in identifying them as important materials for potential applications in high performance optics and optical communication networks.     

Nucleation-growth process of scale electrodeposition – influence of the magnesium ions

Electrodeposition of CaCO₃ was studied under the influence of magnesium ions present in a carbonically pure water. The investigation was performed using electrochemical, gravimetric and optical methods. The chronoamperometric measurements confirmed the inhibiting property of Mg²⁺ when its concentration is higher than 120 mg L⁻¹ in a solution containing 160 mg L⁻¹ of Ca²⁺. The optical technique led the nucleation-growth process to be accessed by means of an optical microscope positioned behind a transparent electrode. The increase of Mg²⁺ concentration changed drastically the calcite morphology. At 360 mg L⁻¹ of Mg²⁺, the calcite morphology was optically amorphous but the Raman spectrum confirmed its structure. The crystal growth was recorded in situ and the image analysis software characterised the nucleation process as well as the growth rate of the crystals. It allowed the influence of the Mg²⁺ ions on the crystallisation process of CaCO₃ to be quantified.     

Growth,thermal and optical properties of a new nonlinear optical crystal: ZnBi2B2O7

Single crystals of ZnBi₂B₂O₇ (ZBBO) have been successfully grown by the top-seeded growth method from a high-temperature melt. The crystal was colorless and transparent with size of 15×10×5 mm³. The orientation of ZBBO crystal has been discussed. The melting point, molar enthalpy of fusion, and molar entropy of fusion of the crystal were determined to be 964.02 K, 110680.36 J mol⁻¹, and 113.92 J K⁻¹ mol⁻¹, respectively. The transparency range of the crystal extends from 370 to 2100 nm.     

Hydride-assisted growth of GaN nanowires on Au/Si(0 0 1) via the reaction of Ga with NH3 and H2

High quality, straight GaN nanowires (NWs) with diameters of 50 nm and lengths up to 3 μm have been grown on Si(0 0 1) using Au as a catalyst and the direct reaction of Ga with NH₃ and N₂:H₂ at 900 °C. These exhibited intense, near band edge photoluminescence at 3.42 eV in comparison to GaN NWs with non-uniform diameters obtained under a flow of Ar:NH₃, which showed much weaker band edge emission due to strong non-radiative recombination. A significantly higher yield of β-Ga₂O₃ NWs with diameters of ≤50 nm and lengths up to 10 μm were obtained, however, via the reaction of Ga with residual O₂ under a flow of Ar alone. The growth of GaN NWs depends critically on the temperature, pressure and flows in decreasing order of importance but also the availability of reactive species of Ga and N. A growth mechanism is proposed whereby H₂ dissociates on the Au nanoparticles and reacts with Ga giving Ga_xH_y thereby promoting one-dimensional (1D) growth via its reaction with dissociated NH₃ near or at the top of the GaN NWs while suppressing at the same time the formation of an underlying amorphous layer. The higher yield and longer β-Ga₂O₃ NWs grow by the vapor liquid solid mechanism that occurs much more efficiently than nitridation.     

Growth rate of α-calcium sulfate hemihydrate in K–Ca–Mg–Cl–H2O systems at elevated temperature

Kinetics of calcium sulfate hemihydrate (HH) crystal growth plays an important role in mineralization of calcium sulfate phases in nature. HH crystal growth and the conversion of calcium sulfate phases form the basis for the production and application of gypsum based building material. α-HH crystals have been grown in 3.74 M CaCl₂ solutions at a fixed initial ratio of calcium to sulfate under atmospheric pressure. The variations of sulfate ions were determined to obtain the α-HH crystal growth kinetics information. Effects of Mg²⁺ and K⁺ ions on α-HH growth were investigated to find an optimal composition of solution for α-HH preparation. The orders of α-HH growing in the CaCl₂ solution were found, in most cases, to be near 2.0 in presence or in absence of Mg²⁺ and K⁺ ions. Mg²⁺ ions enhance the growth of α-HH in CaCl₂ solution mainly due to initial supersaturation enhancing effects. K⁺ ions also improve the growth rate, which has been attributed to the reduction of interfacial energy. In a Ca (3.74 M)–Mg (0.20 M)–K (0.09 M) chlorides solution, the growth rate of α-HH increases with temperature from 80 to 100 °C, and the activation energy was calculated to be 40 kJ/mol.     

Nano-scale structural inhomogeneities of CuI-Cu2MoO4 superionic conducting glass observed by high resolution transmission electron microscopy

Nano-meter sized structural inhomogeneities of (CuI)_0.52-(Cu₂MoO₄)_0.48 superionic conducting glass were investigated by high resolution transmission electron microscopy. The as-quenched sample of CuI-Cu₂MoO₄ is a homogeneous glass, in which the CuI component is finely and uniformly dispersed among the oxyanions of Cu₂MoO₄ glassy matrix. A two-step crystallization, starting at 440 and 495 K, was observed in the glass. After the first step crystallization, precipitating nano-crystalline cubic CuI 2-3 nm in diameter, the electrical conductivity increases by about 50%. On the other hand, the electrical conductivity decreases with the second crystallization event forming crystalline phases of CuI, Cu₂O and others 20-30 nm in diameter.     

Growth and characterization of nanostructured Al2O3/YAG/ZrO2 hypereutectics with large surfaces under laser rapid solidification

The preparation of large bulk oxide eutectics with homogeneous and dense structure in nano-scale by melt growth method is a difficult challenge. Fully dense, homogeneous and crack-free ternary nanostructured Al₂O₃/YAG/ZrO₂ hypereutectic plate with large surface is successfully obtained by laser remelting. The hypereutectic in selected composition presents an ultra-fine eutectic-like microstructure consisting of alternating interpenetrating Al₂O₃, YAG and ZrO₂ lamellae with mean interphase spacing of about 150 nm, which is much smaller than the ternary eutectic composition grown at the same growth conditions. With the increase of laser scanning rate, the lamellar spacing is rapidly decreased. The minimum value obtained is 50 nm. The analysis indicates that the strong faceted growth behavior and cooperative branching of the component phases related with high entropies of fusion and large kinetic undercooling during laser rapid solidification are the primary formation reasons for the irregular eutectic growth morphology. Furthermore, the unique cellular microstructure with complex structure is also observed at high growth rate, and their formation mechanism and effect of the composition on the microstructure are discussed.