含有五边形—七边形缺陷的单壁纳米碳管的输运性质研究

运用第一性原理的密度泛函理论结合非平衡格林函数研究了含有五边形—七边形拓扑缺陷的纳米碳管异质结的输运性质.结果发现：拓扑缺陷对碳管的输运性质有很大影响；另外，不同类型的碳管形成的异质结的输运性质也有明显的差异. 关键词： 纳米碳管 输运性质 异质结 透射系数     

拓扑缺陷的不同分布对单壁碳纳米管电学性能的影响

在紧束缚近似基础上,利用扩展的Su-Schriffer-Heeger(SSH)模型,在实空间研究了在完整的"zigzag"碳纳米管中分别引入5/7,5/6/7,5/6/6/7拓扑缺陷所构成的(9,0)-(8,0),(9,0)-(7,0)和(9,0)-(6,0)三种异质结的电学性能.通过研究表明:这些拓扑缺陷不仅改变碳管的直径,而且支配费米能级附近的电学行为.并计算了(9,0)-(8,0),(9,0)-(7,0)和(9,0)-(6,0)系统的电子态密度,对这3种异质结的能带结构和电子态密度进行了比较.结果表明:五边形和七边形在碳管中分布的不同对碳管电学性能的影响明显不同.因此,可以研制出基于这些异质结的不同的电子器件基元.     

拓扑缺陷对单壁碳纳米管电子结构及其光学光谱的影响

应用密度泛函理论计算了半导体型单壁碳纳米管(7,0)和(8,0)以及其发生镜像对称和非镜像对称Stone-Wales形变、形成异质结(7,0)—(8,0)情况下的能带结构、吸收光谱、反射光谱,并对计算结果进行了比较。研究发现： 引入拓扑缺陷态后,碳纳米管的能带结构发生了明显的变化,费米能级在不同缺陷情况下移动方向不一致;碳管的吸收和反射明显减弱且吸收峰和反射峰在低能区发生红移现象;在光子能量约为E=13 eV处各碳管的吸收谱和反射谱中均出现一特征峰,并且在引入缺陷以后该特征峰向高能区移动。文章对计算结果进行了分析和探讨,可望利用这种拓扑缺陷的引入而产生的光电特性来设计碳管光电器件。     

硼烯/石墨烯异质结缺陷态电子结构的第一性原理研究

采用密度泛函理论系统研究了硼烯-石墨烯异质结中缺陷态对体系电子结构特性的影响.发现缺陷态存在于石墨烯一侧时会破坏异质结结构;但缺陷态存在于硼烯一侧时异质结结构仍然会稳定存在,并且体系电子结构随缺陷态密度改变而发生明显变化:从无缺陷态时的金属特性变为多缺陷态时的半导体特性.常温下的分子动力学模拟进一步验证了相关体系的动力学稳定性.     

Na或Cu掺杂对Si/NiO异质结的光电性能影响

利用磁控溅射方法制备了引入Na或Cu元素前后Si/NiO异质结。实验结果表明,Na元素引入后的Si/NiO：Na异质结的整流特性最佳。此时,Si/NiO：Na异质结光学透过率可以达到70%,这可能是由于Si/NiO：Na异质结的结晶质量较优、薄膜内缺陷少所致。Si/NiO：Na异质结I-V曲线的拟合结果显示界面态状态也会影响其整流特性。而Si/NiO和Si/NiO：Cu异质结都没能获得较好的整流特性,可能是薄膜内缺陷增多所致。这一结论得到了XRD、SEM、AFM和UV结果的支持。     

碳纳米管对接成异质结器件的计算模拟

基于Stone-Wales缺陷演变理论与分子动力学、Monte Carlo计算方法, 进行了碳纳米管(CNTs)对接成异质结器件的计算模拟.首先, 提出了一种模拟CNTs端帽位置变化的新算法, 并计算模拟了单根CNT的端帽从开口到闭合的过程. Stone-Wales缺陷演变被设计模拟这些端帽变化的跃变过程, 以模拟C–C键的生成与断裂, 而分子动力学则作为跃变后构型弛豫的渐变模拟. 同时, 研究了不同管型CNTs的端帽打开并对接形成异质结的过程.研究结果显示, 对接初期在对接处先产生大量的缺陷, 以促进反应的发生. 这些缺陷趋向于演变成稳定的六元环结构, 或者五元环/七元环的结构, 使异质结趋于稳定. 关键词： 碳纳米管 Monte Carlo Stone-Wales缺陷 分子动力学     

含有Stone-Wales缺陷的碳纳米管的热导率模拟

本文以Stone-Wales(SW)缺陷对碳纳米管热导率的影响为研究内容,采用非平衡态分子动力方法,模拟计算存在一个或多个SW缺陷的碳纳米管的轴向温度分布和热导率,并与无缺陷完整碳纳米管进行比较,开展缺陷效应分析,考察了缺陷浓度、碳管长度、碳管手性以及环境温度等因素的影响。模拟结果表明,由于缺陷存在,碳管轴向温度分布在缺陷处产生非线性的间断性跳跃,局部热阻增大。相对完整无缺陷碳管,含有SW缺陷的碳管热导率显著下降;随着缺陷数目的增加,碳管热导率下降的幅度增大。无论是否存在缺陷,锯齿型碳管的热导率通常小于扶手椅型的碳管,而长碳管的热导率通常大于短碳管;相对于锯齿型/长碳管,扶手椅型碳管/短碳管对SW缺陷更为敏感。     

氧气含量对射频磁控溅射方法制备的NiO∶Cu/ZnO异质pn结的光电性能的影响

利用磁控溅射方法改变氧气含量制备了一系列NiO∶Cu/ZnO异质pn结。实验结果表明,氧含量对NiO∶Cu/ZnO异质pn结电学影响很大。相对于纯氩溅射,引入一定氧气(O2/(Ar+O2)比例为30%)后,NiO∶Cu/ZnO异质pn结的整流特性明显得到改善。与此同时,NiO∶Cu/ZnO异质pn结的光透过率也从40%增大到80%。这可能是由于氧气的轻量引入致使NiO∶Cu/ZnO异质pn结的结晶得到改善,薄膜内缺陷减少所致。进一步提高氧气含量,直到O2/(Ar+O2)比例至80%后,异质结的整流特性有所削弱,这可能是由于过多氧气的引入造成薄膜缺陷再次增多,进而影响到异质结的整流特性。这一结论得到了EDS、XRD、AFM和UV结果的支持。     

模板法合成金属-分子-金属异质结及表面增强拉曼光谱研究

采用交流电沉积技术在阳极氧化铝(AAO)模板中沉积不同的金属纳米线, 以对巯基苯(1,4-BDT)为耦联分子, 通过自组装在模板内组装金属纳米粒子, 由此构建金属纳米线-分子-金属纳米粒子的异质结。以异质结内的分子为探针, 采用表面增强拉曼光谱(SERS)研究了异质结的增强行为,通过探针分子的SERS信号表达异质结的组成,并以异质结作为模型研究其SERS机理。研究结果表明该方法可成功构建异质结, 同一取向的异质结的SERS信号较随机取向的SERS信号强。     

C/SiC纳米管异质结电子结构的第一性原理研究

采用基于密度泛函理论的第一性原理计算,对扶手椅型(4,4)和(6,6)及锯齿型(8,0)和(10,0)C/SiC纳米管异质结的电子结构进行了研究.结果表明两类异质结结构都表现为半导体特性.扶手椅型纳米管异质结形成了Ⅰ型异质结,电子和空穴都限制在碳纳米管部分.锯齿型纳米管异质结中价带顶主要分布在碳纳米管部分及C/SiC界面处,而导带底均匀分布在整个纳米管异质结上.这两种异质结结构在未来纳米器件中具有潜在的应用价值. 关键词： C/SiC纳米管异质结 第一性原理 电子结构     

缺陷对碳纳米管摩擦与运动行为的影响

本文采用分子动力学方法研究了公度、无公度情况下含空位、Stone-Thrower-Wales(STW)型缺陷的单壁碳纳米管(SWCNT)在石墨基底上的摩擦与运动行为.结果表明,公度时缺陷的存在导致了界面局部无公度,减小了摩擦.随着碳纳米管底部STW缺陷的增多,碳纳米管变形增大,侧向力波动的幅值减小,局部无公度性增强,摩擦减小.含空位缺陷的碳纳米管所受的摩擦力明显大于含STW缺陷的碳纳米管,原因在于含空位缺陷的碳纳米管在运动的后期出现了明显的翻转现象,增大了能量耗散.无公度时,碳纳米管与石墨基底间的摩擦力很小,缺陷对其摩擦力影响不大,原因在于无论是否含有缺陷,碳纳米管与石墨组成的界面的无公度性差别不大.     

Frequency and field dependent conductivity of carbon nanotube networks

The measured resistance of carbon nanotube networks is often dominated by defects, inter-tube and inter-rope contacts. We show that the peak reported in the frequency-dependent conductivity of single-wall carbon nanotube networks is consistent with metallic conduction interrupted by nonmetallic defects that act as barriers. Such barriers also contribute to the electric field dependence of the conductivity. Using Sheng's model, we calculate the field dependence of fluctuation-assisted tunnelling conduction between metallic regions separated by an insulating barrier, obtaining nonlinearities consistent with our experimental data on carbon nanotube networks.     

Effect of sp-hybridized defects on the oscillatory behavior of carbon nanotube oscillators

Using molecular dynamics simulations, we investigate the oscillatory behaviors of carbon nanotube oscillators containing sp³-hybridized defects formed by hydrogen chemisorption. It is found that the presence of these defects significantly affects the kinetic and potential energies of the nanotube systems, which in turn affects their oscillation periods and frequencies. We have also studied the oscillatory characteristics of the oscillators containing sp³-hybridized Stone-Wales defects. Our results show that it is possible to control the motion of the inner nanotube by introducing sp³-hybridized defects on the outer nanotube, which provides a potential way to tune the oscillatory behavior of nanotube oscillators.     

STM/STS investigation of carbon nanotube junctions

In this paper we present scanning tunneling microscopy/spectroscopy investigations of multiwall carbon nanotube junctions. We concentrated on bent and narrowing junctions, which my be formed by introducing pentagon–heptagon defects into a hexagonal network of a carbon nanotube. It was expected that the defects introduced to the nanotube could cause changes in the local density of states. The scanning tunneling spectroscopy results were used to search for and identify these defects. We also discuss a hypothesis for a combination of a telescope junction and a pentagon–heptagon induced junction. PACS 68.37.Ef; 73.22.–f; 61.46.Fg; 71.20.Tx     

Effect of uniaxial tensile strength on the electrical properties of doped carbon nanotubes: Density functional theory

We investigated the effect of uniaxial tensile strength on a pristine carbon nanotube, boron-doped carbon nanotube, nitrogen-doped carbon nanotube and co-doped carbon nanotube with boron and nitrogen atoms. To achieve our goal, we performed our calculations with the aid of density functional theory. We studied the changes in the electrical properties after the atomic substitution of a carbon atom by boron, nitrogen, and boron and nitrogen in pristine carbon nanotubes. We also applied uniaxial tensile strength to doped structures as well as pristine one. In addition to studying the band gap, we studied the changes in the Fermi energy, valence bands, and conduction bands. We found that defects as well as stress and strain play a crucial rule on modifying the electrical properties of carbon nanotubes.     

Influence of topological defects on the structure of G and D spectral bands of a single-layer carbon nanotube

A topological defect in a carbon nanotube grown by chemical vapor deposition from methane onto a silicon substrate with thermal oxide has been investigated and visualized (with a resolution of about 1.5 μm) by confocal Raman spectroscopy. Vibrational Raman spectra of molecular fragments of a single-wall carbon nanotube (SWCNT) without a defect and with Stone–Wales defects (two pentagonal and two heptagonal cells) are calculated. The influence of defects on the shape of G-band components (G⁺ and G^–), which makes it possible to determine the nanotube conductivity type, is considered.     

多壁碳纳米管束储氢机理的X射线吸收谱研究

采用X射线吸收精细结构光谱探索性地研究了多壁碳纳米管束.在多壁碳纳米管束不同入射角的X射线吸收精细结构光谱中，观察到C—H σ^*共振峰强度随入射角的变化而发生变化.在常温常压下出现C—H键可能与多壁碳纳米管束中存在缺陷有关，缺陷数量越大C—H σ^*共振峰的强度越大.光谱中C—C π^*和C—C σ^*共振峰强度的变化趋势都不同于C—H σ^*共振峰，这有力地证明了在常温常压条件下氢原子是吸附在多壁碳纳米 关键词： X射线吸收精细结构光谱 碳纳米管 储氢 化学吸附     

First-principles study of electronic and elastic properties of Stone–Wales defective zigzag carbon nanotubes

The interaction and coupling between the electrical, mechanical properties and formation energy for SW defective (10,0) carbon nanotube is studied in density functional theory. The investigated configurations include the axial and circumferential orientations for single defect as well as four distribution types for double ones. The more stable defective configurations, namely, SW-I configurations for single SW defective carbon nanotube and II–II-(2) and I–I ones for double SW defective tubes are related to high symmetry distribution of the defects. Moreover, we found that the σ^?–π^* hybridization induced by curvature effect causes the semiconductor to metal transition for double axial SW defects case. Young's modulus reduction of SW defective carbon nanotube with respect to defect-free one is less than 8%. The energy bands and Young's moduli of double SW defective tubes are mostly affected by the defect distribution and concentration but insensitive to the circumferential distance between the double defects.     

Electron diffraction on graphite nanocrystals in the walls of carbon nanotubes

The structure and defects in the walls and cavities of carbon nanotubes were examined by electron diffraction, transmission electron microscopy, energy dispersive X-ray analysis and Raman spectroscopy. The predominating defects in the walls of the nanotubes are graphite nanocrystals having a preferential orientation in the direction of the nanotube axis, and another significant type of defects are particles of the catalyst in the nanotube cavities. In the cavities, also the presence of molybdenum was proved having its origin in the catalyst.