Artificially controlled synthesis of graphene intramolecular heterojunctions for phonon engineering

Because phonons are the main carriers for graphene heat transfer, modifying the dynamic properties of the crystal lattice by isotopes modulates the phonon behavior and alters the thermal properties. Here we demonstrate an artificially controlled texture synthesis of ¹²C‐graphene/¹³C‐graphene heterostructures via chemical vapor deposition and an O₂ plasma etching. The electrical and thermal properties of the graphene across the heterojunction show that ¹²C‐graphene and ¹³C‐ graphene are electronically connected as resistors in series, while the thermal conductivity across the junction is dramatically reduced due to the suppressed phonon propagation, which causes the conductivity across the junction to be lower than that of graphene sheets with randomly mixed isotopes. These findings should help realize novel two‐dimensional graphene thermoelectric devices where phonon modulation controls the electrons and heat transport independently. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Fabrication and performance evaluation of ultraviolet photodetector based on organic /inorganic heterojunction

Organic/inorganic ultraviolet photodetector was fabricated using thermal evaporation technique. Organic/inorganic heterojunction based on thermally evaporated copper (II) acetylacetonate thin film of thickness 200 nm deposited on an n-type silicon substrate is introduced. I–V characteristics of the fabricated heterojunction were investigated under UV illumination of intensity 65 mW/cm². The diode parameters such as ideality factor, n, barrier height, Φ_B, and reverse saturation current, I_s, were determined using thermionic emission theory. The series resistance of the fabricated diode was determined using modified Nord's method. The estimated values of series resistance and barrier height of the diode were about 0.33 KΩ and 0.72 eV, respectively. The fabricated photodetector exhibited a responsivity and specific detectivity about 9 mA/W and 4.6 × 10⁹ Jones, respectively. The response behavior of the fabricated photodetector was analyzed through ON-OFF switching behavior. The estimated values of rise and fall time of the present architecture under UV illumination were about 199 ms and 154 ms, respectively. Finally, enhancing the photoresponsivity of the fabricated photodetector, post-deposition plasma treatment process was employed. A remarkable modification of the device performance was noticed as a result of plasma treatment. These modifications are representative in a decrease of series resistance and an increase of photoresponsivity and specific detectivity. The process of plasma treatment achieved an increment of external quantum efficiency from 5.53% to 8.34% at −3.5 V under UV illumination.     

基于PdSe2/GaAs异质结的高灵敏近红外光伏型探测器的制备和图像传感的应用

本文制备了一种基于PdSe₂/GaAs异质结的高灵敏近红外光电探测器,该探测器是通过将多层PdSe₂薄膜转移到平面GaAs上制成的. 所制备的PdSe₂/GaAs异质结器件在808 nm光照下表现出明显的光伏特性,这表明近红外光电探测器可以用作自驱动器件. 进一步的器件分析表明,这种杂化异质结在零偏电压和808 nm光照下具有1.16×10⁵的高开关比. 光电探测器的响应度和比探测度分别约为171.34 mA/W和2.36×10¹¹ Jones. 而且,该器件显示出优异的稳定性和可靠的重复性. 在空气中2个月后,近红外光电探测器的光电特性几乎没有下降,这归因于PdSe₂的良好稳定性. 最后,基于PdSe₂/GaAs的异质结器件还可以用作近红外光传感器.     

Current transport in ZnO/Si heterostructure grown by laser molecular beam epitaxy

The n-ZnO/p-Si heterojunction was fabricated by depositing high quality single crystalline aluminium-doped n-type ZnO film on p-type Si using the laser molecular beam epitaxy technique. The heterojunction exhibited a good rectifying behavior. The electrical properties of the heterojunction were investigated by means of temperature dependence current density-voltage measurements. The mechanism of the current transport was proposed based on the band structure of the heterojunction. When the applied bias V is lower than 0.15 V, the current follows the Ohmic behavior. When 0.15V 0.6 V), the space charge limited effect becomes the main transport mechanism. The current-voltage characteristic under illumination was also investigated. The photovoltage and the short circuit current density of the heterojunction aproached 270 mV and 2.10 mA/cm 2 , respectively.     

A self-powered β-Ga2O3/CsCu2I3 heterojunction photodiode responding to deep ultraviolet irradiation

In this paper, a lead-free halide perovskite CsCu₂I₃ film with high stability was prepared by the anti-solvent assisted crystallization method. Then, we coupled it with Ga₂O₃ to prepare a corresponding heterojunction deep ultraviolet (UV) photodetector. After testing, we concluded that the photodetector is sensitive to 254 nm UV light. The photodetector has good reproducibility, and has an ultra-high photo-to-dark current ratio (PDCR) of more than 10⁵. In addition, under a bias of 10 V and an illuminated intensity of 200 μW/cm², the responsivity (R) and specific detectivity (D*) reached 20 mA/W and 10⁷ cm Hz^1/2 W⁻¹ (Jones), and the external quantum efficiency (EQE) is 10%. Meanwhile, the prepared photodetector could operate at zero bias, i.e., self-powered operation, along with a photocurrent of about 1 nA under illumination with UV light intensity of 200 μW/cm².     

Self-standing polyvinyl chloride film as flexible substrate for WSe2 based photodetector

Self-standing polymer materials have gained recognition as a flexible substrate for various optoelectronic devices. Here, we incorporated polyvinyl chloride (PVC) with tungsten diselenide (WSe₂) microcrystals. The WSe₂ microcrystals are added to PVC by solution mixing process. The WSe₂-PVC composite film possess excellent flexibility, electrical conductivity of 20 kΩsq⁻¹ at room temperature, high photoresponsivity of 0.3310 mAW⁻¹, detectivity of 1.527 x 10⁹ Jones and external quantum efficiency up to 8.7%. The free-standing WSe₂-PVC photodetectors show durability and reproducibility even after 7 months and show stable photoresponse in the bent state. The visible light WSe₂-PVC photodetector is sensitive to different monochromatic radiations (470 nm, 540 nm and 670 nm) and demonstrates potential applications in next-generation wearable optoelectronic devices.     

Narrowband ultraviolet photodetector based on MgZnO and NPB heterojunction

An ultraviolet photodetector was fabricated based on Mg_0.07Zn_0.93O heterojunction. N, N'-bis (naphthalen-1-y1)-N, N'-bis(pheny) benzidine was selected as the hole transporting layer. I-V characteristic curves of the device were measured in the dark and under the illumination of 340?nm UV light with density of 1.33 mW/cm². The device showed a low dark current of about 3×10^-10 A and a high photo-dark current ratio of 1×10⁵ at -2 V bias. A narrowband photoresponse was observed from 300 to 400?nm and centered at 340?nm with a full width at half-maximum of only 30?nm. The maximum peak response is at 340?nm, which is 0.192 A/W at the bias of -1 V.     

Study on the n-β-FeSi2/p-Si solar cells under different illuminated directions

The n-β-FeSi₂/p-Si heterojunction solar cells can be used under illumination of β-FeSi₂ side or Si side. In this work, the effects of illuminated direction on the photovoltaic properties of n-β-FeSi₂/p-Si heterojunction solar cells were analyzed by numerical methods. The calculated results show that the n-β-FeSi₂/p-Si heterojunction solar cell under illumination of β-FeSi₂ side has superior photovoltaic properties, which is consisting with the experimental reports. For the illumination of Si side, the photo-generated carriers in the back surface of Si substrate are far from the built-in electric field, resulting in the reduced conversion efficiency. The calculated results indicate that we should choose the illumination of β-FeSi₂ side for n-β-FeSi₂/p-Si heterojunction solar cell application.     

掺铒的纳米相氟氧化物玻璃陶瓷的多光子红外量子剪裁

研究了掺铒的纳米相氟氧化物玻璃陶瓷(Er(3):FOV)的红外量子剪裁现象,测量了红外和可见的Er(3):FOV的荧光光谱.结果发现光激发²H_11/2能级的⁴ I_13/2→⁴I_15/2荧光跃迁的近似量子剪裁效率已达约186.28%.计算了有关的无辐射弛豫速率、自发辐射速率和能量传递速率,分析了有关的能量传递动力学过程,发现     

Electronic structure of graphene/Y2C heterostructure and related doping effect

Until now, many attempts have been made to dope graphene in various ways, but each method turned out to have pros and cons. In this study, to overcome the limitations of doping methods, yttrium hypocarbide (Y₂C) is investigated as one prospective material to dope graphene, using density functional theory calculations. In monolayer Y₂C, the anionic electrons localized away from Y atomic layers are confirmed to contribute to occupied states near the Fermi level. Next, we investigate the electronic structure of graphene in heterojunction with Y₂C. Anionic electrons of Y₂C occupy the empty states of graphene in graphene/Y₂C heterostructure, which makes the Dirac cone of graphene located at about 1.7 eV below the Fermi level. Such charge transfer of anionic electrons to graphene and the flatness of electric cloud of anionic electrons leads to evenly n-doped graphene in graphene/Y₂C heterostructure. This suggests that Y₂C is a good candidate to dope graphene.     

Er3+离子掺杂钡镓锗玻璃上转换发光机理研究

研究了Er³⁺离子掺杂钡镓锗玻璃的吸收光谱、拉曼光谱和上转换光谱.分析了Er³⁺离子在钡镓锗玻璃中的上转换发光机理.结果表明：玻璃的最大声子能量为828cm^-1，紫外截止波长为275nm.采用800nm和980nmLD激发玻璃样品，在室温下观察到强烈的上转换绿光和红光发射.随着Er³⁺离子浓度的增加，绿光发光强度先增加后减小，而红光发光强度呈单调递增趋势.能量分析表明：800nmLD激发产生的绿光主要源于Er³⁺离子4I_13/2能级的激发态吸收过程；红光发射主要源于Er³⁺离子4I_13/2能级与4I_11/2能级之间的能量转移过程.980nmLD激发产生的绿光主要源于Er³⁺离子4I_11/2能级之间的能量转移过程；而红光发射主要源于Er³⁺离子4I_13/2能级与4I_11/2能级之间的能量转移过程和4I_13/2能级的激发态吸收过程.通过量子效率分析，发现采用800nmLD激发Er³⁺离子掺杂浓度为1mol% 的样品时，上转换绿光发光效率最高. 关键词： 上转换发光机理 3+离子掺杂')" href="#">Er³⁺离子掺杂 钡镓锗玻璃     

Fabrication and efficient visible light-induced photocatalytic activity of Bi2MoO6/BiPO4 composite

Novel Bi₂MoO₆/BiPO₄ composites with heterojunction structure were fabricated by a one-step hydrothermal method. The photocatalytic properties of Bi₂MoO₆/BiPO₄ composites were evaluated by photocatalytic degradation of rhodamine B (Rh B) under visible light irradiation (λ>420 nm). The results showed that Bi₂MoO₆/BiPO₄ photocatalysts showed much higher photocatalytic activity for the Rh B degradation than the pure BiPO₄ and Bi₂MoO₆ under visible light. The best photocatalytic performance of Bi₂MoO₆/BiPO₄ with about 98.0% Rh B degradation located at molar ratio of 2:1 under visible light illumination for 30 min. The enhanced photocatalytic activity could be mainly ascribed to the formation of heterojunction interface in Bi₂MoO₆/BiPO₄ composites, which is beneficial to the transfer and separation of photogenerated electron–hole pairs, as well as the strong visible light absorption resulting from the sensitization role of Bi₂MoO₆ to BiPO₄. It was also observed that the photodegradation of Rh B is chiefly attributed to the oxidation action of the generated O₂⁻ radicals and the action of h_vb⁺ through direct hole oxidation process.     

Photoluminescence of Er-doped Si-SiO2 and Al–Si-SiO2 sputtered thin films

Er-doped Si-SiO₂ and Al–Si-SiO₂ films have been deposited by rf-sputtering being annealed afterwards. Annealing behavior of the Er³⁺: ⁴I_13/2→⁴I_15/2 emission of Er-doped Si-SiO₂ yields a maximum intensity for annealing at 700–800 °C. ⁴I_13/2→⁴I_15/2 peak emission for Er-doped Al–Si-SiO₂ at 1525 nm is shifted from that for Er-doped Si-SiO₂ at 1530 nm and the bandwidth increases from 29 to 42 nm. ⁴I_13/2→⁴I_15/2 emission decays present a fast decaying component related to Er ions coupled to Si nanoparticles, defects, or other ions, and a slow decaying component related to isolated Er ions. Excitation wavelength dependence and excitation power dependence for the ⁴I_13/2→⁴I_15/2 emission correspond with energy transfer from Si nanoparticles. Populating of the ⁴I_11/2 level in Er-doped Si-SiO₂ involves branching and energy transfer upconversion involving two or more Er ions. Addition of Al reduces the populating of this level to an energy transfer upconversion involving two ions.     

Influence of surface recombination and interface states on the performance of β-FeSi2/c-Si heterojunction solar cells

To explore the origin of low conversion efficiency for novel β-FeSi₂/c-Si heterojunction solar cells, the effect of surface recombination and interface states on the cell performance has been investigated by numerical simulation. The present results show that surface recombination of β-FeSi₂ film plays an important role in limiting the cell property since the photovoltaic behavior of β-FeSi₂ is quite sensitive to surface recombination due to its especial characteristic of very high optical absorption coefficient. Surface quality of β-FeSi₂ film should be much improved for better cell performance. In addition, it is shown that interface states between β-FeSi₂ film and crystalline silicon are critical to device characterization. Interface states should be minimized to obtain higher conversion efficiency. If surface recombination and interface states can be best suppressed, potential conversion efficiency for the cell may be up to 28.12% at 300 K under illumination of AM 1.5, 100 mW/cm².     

A hybrid photodiode with planar heterojunction structure consisting of ZnO nanoparticles and CuPc thin film

A photodiode with planar heterojunction was fabricated using copper (II) phthalocyanine (CuPc) organic semiconductor and zinc oxide (ZnO) inorganic nanoparticles (NPs, ～5 nm). The current–voltage (I–V) characteristics of ITO/ZnO NPs/CuPc/Ag device in dark and under illumination with a solar simulator were investigated in detail. The measurement results showed that the device exhibited good rectifying behavior in dark and under illumination. A rectification ratio (RR) of 15.44 at 1.95 V was achieved for the device under 100 mW/cm² illumination power. Also, the RR of the device as a function of light intensity was observed. The photoresponsive mechanism of the photodiode was illuminated in term of its energy band diagram.     

Utilization of surface plasmon resonance of Au/Pt nanoparticles for highly photosensitive ZnO nanorods network based plasmon field effect transistor

Hydrothermally processed highly photosensitive ZnO nanorods based plasmon field effect transistors (PFETs) have been demonstrated utilizing the surface plasmon resonance coupling of Au and Pt nanoparticles at Au/Pt and ZnO interface. A significantly enhanced photocurrent was observed due to the plasmonic effect of the metal nanoparticles (NPs). The Pt coated PFETs showed I_on/I_off ratio more than 3 × 10⁴ under the dark condition, with field-effect mobility of 26 cm² V⁻¹ s⁻¹ and threshold voltage of −2.7 V. Moreover, under the illumination of UV light (λ = 350 nm) the PFET revealed photocurrent gain of 10⁵ under off-state (−5 V) of operation. Additionally, the electrical performance of PFETs was investigated in detail on the basis of charge transfer at metal/ZnO interface. The ZnO nanorods growth temperature was preserved at 110 °C which allowed a low temperature, economical and simple method to develop highly photosensitive ZnO nanorods network based PFETs for large scale production.     

Illumination dependence of I-V and C-V characterization of Au/InSb/InP(1 0 0) Schottky structure

The effects of surface preparation and illumination on electric parameters of Au/InSb/InP(100) Schottky diode were investigated, in the later diode InSb forms a fine restructuration layer allowing to block In atoms migration to surface. In order to study the electric characteristics under illumination, we make use of an He-Ne laser of 1 mW power and 632.8 nm wavelength. The current-voltage I(V_G), the capacitance-voltage C(V_G) measurements were plotted and analysed. The saturation current I_s, the serial resistance R_s and the mean ideality factor n are, respectively, equal to 2.03 × 10⁻⁵ A, 85 Ω, 1.7 under dark and to 3.97 × 10⁻⁵ A, 67 Ω, 1.59 under illumination. The analysis of I(V_G) and C(V_G) characteristics allows us to determine the mean interfacial state density N_ss and the transmission coefficient θ_n equal, respectively, to 4.33 × 10¹² eV⁻¹ cm⁻², 4.08 × 10⁻³ under dark and 3.79 × 10¹² eV⁻¹ cm⁻² and 5.65 × 10⁻³ under illumination. The deep discrete donor levels presence in the semiconductor bulk under dark and under illumination are responsible for the non-linearity of the C⁻²(V_G) characteristic.     

Double Fluorescence Conversion in Ultraviolet and Visible Region for Some Praseodymium Complexes of Aromatic Carboxyates

Four praseodymium complexes of aromatic carboxylates (benzoate, 4-tert-butylbenzoate, 2-benzoylbe-noate, and benzimidazole-5-carboxylate) have been synthesized and characterized, whose photophysical properties have been studied with ultraviolet spectra, phosphorescence spectra, and fluorescence spectra. The fluorescent emission spectra of all praseodymium complexes show two emission peaks under the excitation band of 245 nm at about 395 and 595 nm respectively, while one peak under 415 nm at about 595 nm, which attributed to be ¹S₀ → ¹I₆ (395 nm) transition and the characteristic emission ¹D₂ → ³H₄ (595 nm) transition of Pr³⁺ ion. The ¹S₀ → ¹I₆ transition can be ascribed as the transition of charge transfer state, and the ¹D₂ → ³H₄ can be further proved that there exists an antenna effect in the fluorescence of praseodymium with aromatic carboxylic acids. In conclusion, the praseodymium complexes systems can realize the double fluorescent conversion in both ultraviolet and visible region and can be further studied the application of this conversion.     

Mn<Subscript>4</Subscript>Si<Subscript>7</Subscript>-Si〈Mn〉-Mn<Subscript>4</Subscript>Si<Subscript>7</Subscript> and Mn<Subscript>4</Subscript>Si<Subscript>7</Subscript>-Si〈Mn〉-<Emphasis Type="Italic">M</Emphasis> photodiodes

The current-voltage characteristics of Mn₄Si₇-Si〈Mn〉-Mn₄Si₇ and Mn₄Si₇-Si〈Mn〉-M photodiodes are studied experimentally. The current passage mechanism under illumination with hν ≥ E _g is considered. The role of a contact to Mn₄Si₇ in the provision of high photosensitivity under illumination of the base by light with hν ≥ 1.14 eV at low temperatures, 77–220 K, is analyzed. From electrical measurements, electron microscopic data for the Mn₄Si₇-Si〈Mn〉 interface, and photocurrent-voltage characteristics, a band diagram under the conditions of photocurrent passage is constructed. The high low-temperature photosensitivity of the diodes (I _ph/I _d ≥ 10⁹) is explained by the impact-ionization-induced modulation of the base conductivity and injection amplification of holes in the transition layer.     

Electrical and photovoltaic characteristics of sodium copper chlorophyllin/n-type silicon heterojunctions

Heterojunctions of p-type sodium copper chlorophyllin (p-SCC)/n-type silicon (n-Si) were prepared by deposition of p-SCC film on n-Si wafers using spray-pyrolysis technique. Current-voltage and capacitance-voltage measurements of Au/p-SCC/n-Si/In heterojunctions were performed to discuss the electrical properties of these heterostructures. Rectifying characteristics were observed, which are definitely of the diode type. The current-voltage measurements suggest that the forward current in these junctions involves tunnelling and the results showed that the forward current can be explained by a multi-tunnelling capture-emission model in which the electron emission process dominates the carrier transport mechanism. On the other hand, the reverse current is probably limited by the same conduction process. The capacitance-voltage behavior indicates an abrupt heterojunction model is valid for Au/p-SCC/n-Si/In heterojunctions and the junction parameters such as, built-in potential, V_D, carrier concentration, N, the width of depletion layer, W, were obtained. The temperature and frequency dependence of the measured capacitance were also studied. The loaded I-V characteristics under white illumination provided by tungsten lamp (80 mW/cm²) give values of 400 mV, 0.9 mA, 0.38 and 1.7% for the open-circuit voltage, V_oc, the short-circuit current, I_sc, the fill factor, FF, and conversion efficiency, η, respectively.