Band structures in73Se

Excited states of⁷³Se have been investigated up to spin, 21/2 using techniques of in-beamγ-ray spectroscopy in connection with the⁷⁰Ge(α, n) reaction. Mean lifetimes of 12 levels have been determined applying Doppler-shift andγ-RF-methods. Five different bands have been identified that reflect a variety of different excitation modes. The decoupled 9/2⁺ band is likely to correspond to an oblate deformation while the 5/2⁺ band is interpreted as a strongly coupled prolate band built on the Nilsson configuration [422] 5/2⁺. The 3/2^? band is a strongly coupled band built on the [301] 3/2^} configuration.Nuclear reactions:⁷⁰Ge(α,n),E=14, 16, 18, 19, 20MeV; measuredE _γ,I _γ,σ(E _γ,θ),γγ-coin, linear polarization, DSA,γ(t).⁷⁵Se deduced levels,I, π, τ, δ(E2/M1), B(σλ). Enriched targets, Ge detectors.     

The refractive index dispersion of Hg1−xCdxTe by infrared spectroscopic ellipsometry

The refractive indices of Hg_1−xCd_xTe (x=0.276, 0.309, and 0.378) bulk samples in the region below, in, and above the fundamental band gap have been measured by infrared spectroscopic ellipsometry at room temperature. A refractive index peak, in which the corresponding energy equals approximately the band gap energy, is observed for each refractive index spectrum with different compositions. Above the band gap, the refractive index drops quickly near the gap, then decreases slowly as photon energy increases. The refractive index n above the band gap is found to follow the Sellmeier dispersion relationship n²(λ)=A+B/λ²+C/λ⁴+D/λ⁶ as a function of the wavelength of light λ.     

Evidence for fast decay dynamics of the photoluminescence from Ge nanocrystals embedded in SiO2

We have investigated the origin of room temperature photoluminescence from ion-beam synthesized Ge nanocrystals (NCs) embedded in SiO₂ using steady state and time-resolved photoluminescence (PL) measurements. Ge NCs of diameter 4-13 nm were grown embedded in a thermally grown SiO₂ layer by Ge⁺ ion implantation and subsequent annealing. Steady state PL spectra show a peak at ∼2.1 eV originating from Ge NCs and another peak at ∼2.3 eV arising from ion-beam induced defects in the SiO₂ matrix. Time-resolved PL studies reveal double exponential decay dynamics on the nanoseconds time scale. The faster component of the decay with a time constant τ₁∼3.1 ns is attributed to the nonradiative lifetime, since the time constant reduces with increasing defect density. The slower component with time constant τ₂∼10 ns is attributed to radiative recombination at the Ge NCs. Our results are in close agreement with the theoretically predicted radiative lifetime for small Ge NCs.     

Electrophysical properties and energetical spectrum of heteroepitaxial germanium films

An epitaxial growth of Ge films from molecular beam is characterized by thermodynamical nonequilibrium. This leads to formation of numerous structural defects connected with local levels in the band gap (mainly acceptor-type). Depending on the deposition temperature the density of such levels may change in wide range (10¹⁶–10¹⁸ cm^?3). This determines various mechanisms of impurity conduction. The tails of the density of states in the band gap are also connected with the defect structure of the films. Stresses in heteroepitaxial Ge films result in the splitting of the valence band atk = 0 and in a change of the band gap. Thus, these stresses have influence on the electrical and optical properties of the films.     

Indirekte Band-Band-Stoßrekombination in Germanium

Photoemission from Ge, caused by carrier injection via ap-n-junction was observed at a wavelength about 1 μm at room temperature. The dependence on energy, temperature and carrier density shows, that there appears a high energy tail of a radiative band to band recombination, which cannot be the tail of the usual radiative recombination in Ge. The intensity of the photoemission is proportional ton ² p ². The experimental results are explained as follows: Via indirect band to band Auger-recombination a hole is brought into the split-off band. In this band, the hole reaches thermal equilibrium with the lattice. While it remains in this band, it is able to recombine radiatively with electrons of the conduction band.     

A study of branching ratios of cross sections in the charge symmetric reactions10B(d,p)11B and10B(d,n)11C

High-spin states in¹⁵⁶Er have been populated using the (α, 8n) and (¹⁶O, 4n) reactions. In the ground state band a strong backbending effect was observed atI ^π=12⁺. Four states of a secondK=0 band with spins 9, 11, 13 and 15 were found. This second band depopulates completely into the 8⁺ and 10⁺ members of the ground state band. This is explained by the fact that the upper states of this second band are yrast states and that this band crosses the (gsb)-line atI ?11.     

Electronic structure of strained Sin/Gen(001) superlattices

Using the empirical tight binding method we have investigated the electronic properties of the Si_n/Ge_n(001) strained superlattices as a function of the superlattice periodicity and the band misfit. For n ≥ 4 we have found that first and second conduction band states are localized in Si. The hole states localized in Ge appear for n ≥ 4. The difference between the direct and indirect band gaps is reduced from 2.01 eV for bulk Si to 0.01 eV for n=6 which can be considered to be quasi-direct. For the cases n=6 and n=8, the band gap might become direct for large values of band misfit.     

Recoil distance lifetime measurements in82Kr

The lifetimes τ=124±12, 6 _?2 ⁺⁴ and 380±100 ps of theE _x (I ^π )=3.46(8⁺), 2.92(6⁺) and 3.04(6^?) MeV states, respectively, populated by the reaction⁷⁶Ge(¹²C,α2n) were measured with the recoil distance method. In addition upper lifetime limits were obtained for nine states. The measured lifetimes and energies indicate a band crossing at aboutI ^π =8⁺, probably arising from the alignment of twog _9/2 neutrons. For the 3.04 MeV 6^? state as a second member of a band built on the 2.65 MeV 4^? state the measured lifetime points to a two-quasiparticle configuration. The positive-parity states have been discussed in the frame of the interacting boson approximation, nuclear field theory and the cranked shell model.     

High spin states in75Se populated by the72Ge(α,n) and73Ge(α, 2n) reaction

The⁷²Ge(α, n)⁷⁵Se and⁷³Ge(α, 2n)⁷⁵Se reactions have been studied at bombarding energies of 15 MeV and 22.5 MeV respectively using Ge(Li)-detectors.γ-singles spectra,γ-γ-coincidences,γ-angular distributions and excitation functions have been taken. A level scheme has been constructed, which contains a stretched spin and a normal rotational band. Nuclear reactions⁷²Ge(α, n)⁷⁵Se,⁷³Ge(α, 2n)⁷⁵Se; measuredE _γ ,I _γ ,γ-γ-coincidences,γ-angular distribution,γ-excitation function.⁷⁵Se deduced levels,J, π, γ-multipolarity. Enriched target, Ge(Li).     

Light absorption in Ge nanoclusters embedded in SiO2: comparison between magnetron sputtering and sol–gel synthesis

SiGeO films have been produced by a sol–gel derived approach and by magnetron sputtering deposition. Post-thermal annealing of SiGeO films in forming gas or nitrogen atmosphere between 600 and 900 °C ensured the phase separation of the SiGeO films and synthesis and growth of Ge nanoclusters (NCs) embedded in SiO₂. Rutherford backscattering spectrometry analysis evidenced a similar Ge concentration (~12 %), but a different Ge out-diffusion after annealing between the two types of techniques with the formation of a pure SiO₂ surface layer (~30 nm thick) in sol–gel samples. The thermal evolution of Ge NCs has been followed by transmission electron microscopy and Raman analysis. In both samples, Ge NCs form with similar size increase (from ~3 up to ~7 nm) and with a concomitant amorphous to crystalline transition in the 600–800 °C temperature range. Despite a similar Ge concentration, a significant lower NCs density is observed in sol–gel samples attributed to an incomplete precipitation of Ge, which probably remains still dispersed in the matrix. The optical absorption of Ge NCs has been measured by spectrophotometry analyses. Ge NCs produced by the sol–gel method evidence an optical band gap of around 2 eV, larger than that of NCs produced by sputtering (~1.5 eV). These data are presented and discussed also considering the promising implications of a low-cost sol–gel based technique towards the fabrication of light harvesting devices based on Ge nanostructures.     

Structures,Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

The doping of semiconductor nanocrystals (NCs) is crucial for the optimization of the performance of devices based on them. In contrast to recent progress on the doping of compound semiconductor NCs and silicon NCs, the doping of germanium (Ge) NCs has lagged behind. Here it is shown that Ge NCs can be doped with phosphorus (P) during synthesis by a nonthermal plasma. It is found that there are more P atoms in the NC near‐surface region than in the NC core. P doping modifies the surface state of Ge NCs. Compressive strain can be incuced in Ge NCs by P which can explain the P‐doping‐enhanced oxidation resistance of Ge NCs. Stable dispersions of P‐doped Ge NCs in acetonitrile can be cast to produce films for field‐effect transistors (FETs). FET analysis shows that the electrical conductivity and electron mobility of a Ge‐NC film increase with the increase of the P doping level, although the electrical activation efficiency of P in the Ge‐NC film is low. Finally, atomic layer deposition of aluminum oxide at the surface of P‐doped Ge NCs is shown to improve the performance of the FETs.     

Collective excitations in145Ba

High-spin levels in¹²⁵Ba have been produced in the¹¹⁶Sn(¹² C, 3n) reaction and studied by in-beam spectroscopic methods. Two strongly populated band structures are observed. The odd-parity one is based on a 7/2^? state and can be explained as the result of the coupling between anh _11/2 neutron-hole and a prolate type triaxial core. The even-parity band, built on a 7/2⁺ state, corresponds to collective excitations associated with a neutron-hole in theg _7/2 shell. Comparisons with heavier odd-A Ba isotopes and discussions are made in the frame work of the triaxial core model. Nuclear Reactions¹¹⁶Sn(¹²C, 3nγ), E=45–55 MeV; measuredσ(E;E _γ,θ),γγ-coinc,γ-γ delay. Enriched target, Ge(Li) detectors.¹²⁵Ba deduced levels,J,π,γ-mixing.     

Optical transitions in Ge nanocrystals formed by high-pressure annealing of Ge ion implanted SiO2 films

Optical transitions in Ge nanocrystals formed by high-pressure annealing of the Ge⁺ ion implanted SiO₂ films have been studied by Raman and photoluminescence spectroscopy. It has been found that the E₁,E₁+Δ₁ Raman resonance shift observed from the unstrained and hydrostatically compressed nanocrystals corresponds to the quantization of the electron-hole state spectrum of the Ge band. It has also been established that the appearance of a green photoluminescence band centered at 420-520 nm correlates with the formation of strained nanocrystals. Comparisons of the PL data with HRTEM results have been made, which suggest that the green PL arises from strained Ge nanocrystals of a radius of less than 5 nm. The direct electron-hole recombination at Γ is discussed as a possible origin of the observed photoluminescence band.     

Study of low-lying states in151Eu via (n,n′γ) reaction

The levels of¹⁵¹Eu have been investigated in the (n,n′γ) reaction using nuclear reactor fast neutrons. The energies, intensities and angular distributions of theγ-rays have been measured with the Ge(Li) spectrometer. Four rotational bands with the following band heads and Nilsson configurations have been identified: ground state band, 5/2⁺ [402]; 21.5 keV, 7/2⁺[404]; 196.5 keV, 3/2⁺[411]; 260.5 keV, 5/2⁺[413]. The low spin states at 332.2 and 336.2 keV have been tentatively assigned to the l/2⁺[411] Nilsson orbital, but 522.8, 580.0 and 587.0 keV states to the 1/2⁺[420] Nilsson orbital. The negative parity levels at 353.7, 522.1 and probably 546.2 keV have been proposed basing on theh _11/2 proton state.     

First-principles study on the structural and electronic properties of LiB and its hydrides (Li2BnHn, n=5, 8, 12, LiBH4)

Structural, electronic and vibrating properties of LiB and its hydrides (Li₂B_nH_n, n=5, 8, 12, LiBH₄) were calculated by the first-principles using density functional theory in its generalized gradient approximation. The calculated results are in good agreement with experimental studies. The deviation between theory and experimental results are also discussed. With the increasing of H atoms in range of 5-12, the band gap energy increases and the width of the conduction band decreases. Comparing with LiB, the band gap of LiBH₄ is broadened, which indicates the enhancement of Li-B and Li-H bond strength. Valence electrons mainly transfer from Li atoms to B and H atoms. As a result, Li atoms are thought to be partially ionized as Li⁺ cations. There is little contribution of Li orbital to the occupied states, resulting in Li-H and Li-B bond exhibiting an ionic nature, and B-H bond showing a covalent nature.     

Study of band structures and crossings in179Re

High-spin states in¹⁷⁹Re have been populated by the¹⁶⁵Ho(¹⁸O, 4n) and¹⁷⁰Er(¹⁴N,5n) reactions. A level scheme is constructed from the studies ofγγ-coincidences using anti-Compton spectrometer arrays. The previously known 5/2⁺[402], 1/2^? [541] and 9/2^? [514] bands have been extended to 35/2⁺, 45/2^? and 39/2^?, respectively. In addition a 1/2⁺ [660] band, a three-quasiparticle band and two isomers were established. Furthermore several level sequences were identified decaying into the 5/2⁺ [402] and 1/2^? [541] bands. This allowed to determine the excitation energy of the 9/2^? member of the latter band. The band crossing features of the bands have been explained as the rotation alignment of ani _13/2 quasineutron pair taking into account shape changes.     

Band gap tuning of Ge/SiC bilayers under an electric field: a density functional study

The structure and electronic properties of Ge/SiC van der Waals (vdW) bilayer under the influence of an electric field have been investigated by the first-principles method. Without an electric field, the system shows a small band gap of 126 meV at the equilibrium state. Interestingly, by applying a vertical external electric field, the results present a parabola-like relationship between the band gap and the strength. As the negative E-field changes from 0.0 to ?0.40 V/Å, the band gap first increases to a maximum of about 378 meV and then decreases to zero. A similar trend is exhibited for the positive E-field, ranging from 0.0 to +0.40 V/Å. The band gap reaches a maximum of about 315 meV at +0.10 V/Å. The significant variations of band gap are owing to different states of Ge, Si, and C atoms in conduction band and valence band. The predicted electric field tunable band gap of the Ge/SiC vdW heterostructures is very promising for its potential use in nanodevices.     

Scattering and resonance properties of the interaction of slow neutrons with the isotopes of silicon and sulfur

In¹¹⁷Te,¹¹⁹Te and¹²¹Te isomeric states withJ ^π=5/2⁺, 5/2⁺ and 7/2⁺ and half-lives of 19.1(9)ns, 2.2(2) ns and 86(6) ns, respectively, have been identified at low excitation energies using (α, 2n) reactions on enriched^115–119Sn targets. Positive parityΔJ=1 bands built on these isomeric states have been observed up to 17/2⁺. The states are interpreted as members of rotational bands built on deformation driving 5/2⁺ [402] and 7/2⁺ [404] Nilsson orbitals which overcome theN=64 subshell gap. The irregular level spacings and electromagnetic properties of the bands are well explained in Coriolis calculations. The moment of inertia parameter as function of collective angular momentum has been derived from the doubly even Te cores. The hindrance of the band head deexcitation may be caused by shape fluctuations of these transitional nuclei.     

Multipolarities of prompt transitions in 156Dy and spin-parities of the upper band levels

The prompt γ-ray and conversion-electron spectra following the ¹⁵⁹Tb(p, 4n)¹⁵⁶Dy and ¹⁵⁶Gd(α, 4n)¹⁵⁶Dy reactions have been measured with, respectively, a Ge(Li)-NaI(Tl) Compton suppression device and a mini-orange spectrometer. On the basis of the deduced multipolarities, earlier spin-parity assignments for levels in ¹⁵⁶Dy have been confirmed. Furthermore, the recently reported upper band levels could be divided into a negative-parity band up to 11^? or maybe 13^?, and a positive-parity band with tentative K = 0 character and spins 4⁺, 6⁺, 8⁺, 10⁺ and maybe 2⁺. The negative-parity band is described as an aligned-octupole band; the positive-parity band may possibly represent the low-spin extension of the superband responsible for backbending in the β- and ground-state bands in this nucleus.     

Decay of three-particle high spin states in85Y

High spin states in⁸⁵Y have been excited in the reaction⁷²Ge(¹⁶O,p2n) at 48–60 MeV beam energy. From measurements ofnγ andγγ coincidences, excitation functions and angular distributions, the high spin spectrum of⁸⁵Y has been established up to 5.4 MeV excitation energy and spinI≦29/2. Lifetimes or limits of lifetimes have been determined for 14 levels via the recoil distance and Doppler shift attenuation method. Theg _9/2 decoupled proton band is found to backbend atI ^π=17/2⁺ as also seen in the reduction of the 17/2⁺→13/2⁺ and 21/2⁺→17/2⁺ E2 transition strengths. The lowest (3qp) positive parity band has predominantly aν ² g _9/2×πg _9/2 structure. The observed negative parity yrast states in the spin range 15/2^?≦I≦29/2^? are most probably of (g _9/2)² ×(f _5/2,p _1/2) (3qp) nature as suggested by a comparison of the⁸⁴Sr and⁸⁵Y level structures and electromagnetic transition strengths.