Stretched exponential kinetics for photoinduced birefringence in azo dye doped PVA films

We fabricated azo dye (methylorange) doped poly vinyl alcohol (MO/PVA) thin films and measured the photoinduced birefringence (PIB) kinetics for several pump beam intensities and for various MO concentrations by using the pump-probe technique. A novel approach to explain the transient behaviors of the photoinduced anisotropy is presented by employing an empirical stretched exponential time response in the course of the trans-cis-trans photoisomerization of azo molecules and is compared with the experimental data, showing excellent agreement. The stretched exponent is estimated to be β = 0.34 ± 0.04, revealing amorphous nature of the MO/PVA system.     

Effects of annealing on properties of ZnO thin films prepared by electrochemical deposition in chloride medium

The development of cost-effective and low-temperature synthesis techniques for the growth of high-quality zinc oxide thin films is paramount for fabrication of ZnO-based optoelectronic devices, especially ultraviolet (UV)-light-emitting diodes, lasers and detectors. We demonstrate that the properties, especially UV emission, observed at room temperature, of electrodeposited ZnO thin films from chloride medium (at 70 °C) on fluor-doped tin oxide (FTO) substrates is strongly influenced by the post-growth thermal annealing treatments. X-ray diffraction (XRD) measurements show that the films have preferably grown along (0 0 2) direction. Thermal annealing in the temperature range of 150-400 °C in air has been carried out for these ZnO thin films. The as-grown films contain chlorine which is partially removed after annealing at 400 °C. Morphological changes upon annealing are discussed in the light of compositional changes observed in the ZnO crystals that constitute the film. The optical quality of ZnO thin films was improved after post-deposition thermal treatment at 150 °C and 400 °C in our experiments due to the reducing of defects levels and of chlorine content. The transmission and absorption spectra become steeper and the optical bandgap red shifted to the single-crystal value. These findings demonstrate that electrodeposition have potential for the growth of high-quality ZnO thin films with reduced defects for device applications.     

液相激光烧蚀合成ZnO及Zn/ZnO纳米颗粒及其光致发光性能

利用532 nm脉冲激光对沉浸在去离子水及十二烷基硫酸钠(SDS)水溶液中的金属锌靶进行液相激光烧蚀,合成了ZnO纳米颗粒和Zn/ZnO核壳结构的纳米粒子. 应用X射线衍射仪,透射电子显微镜,紫外可见光分光光度计和荧光光度计表征产物的微观结构和光学性能,并探讨其形成机理. 结果表明:在去离子水中分别烧蚀2 h和4 h生成的ZnO纳米粒子的平均粒径分别为43 nm和19 nm. 激光的长时间作用可以使纳米粒子粒径减小. 在0.005 mol/L的SDS水溶液中合成了Zn/ZnO核壳结构的纳米粒子,这是由于S 关键词： 脉冲激光烧蚀 ZnO纳米粒子 核壳结构 光致发光     

Spectral features and antibacterial properties of Cu-doped ZnO nanoparticles prepared by sol-gel method

Zn_(1-x)Cu_x O(x=0.00, 0.01, 0.03, and 0.05) nanoparticles are synthesized via the sol-gel technique using gelatin and nitrate precursors. The impact of copper concentration on the structural, optical, and antibacterial properties of these nanoparticles is demonstrated. Powder x-ray diffraction investigations have illustrated the organized Cu doping into ZnO nanoparticles up to Cu concentration of 5%(x = 0.05). However, the peak corresponding to CuO for x= 0.01 is not distinguishable. The images of field emission scanning electron microscopy demonstrate the existence of a nearly spherical shape with a size in the range of 30–52 nm. Doping Cu creates the Cu–O–Zn on the surface and results in a decrease in the crystallite size. Photoluminescence and absorption spectra display that doping Cu causes an increment in the energy band gap. The antibacterial activities of the nanoparticles are examined against Escherichia coli(Gram negative bacteria)cultures using optical density at 600 nm and a comparison of the size of inhibition zone diameter. It is found that both pure and doped ZnO nanoparticles indicate appropriate antibacterial activity which rises with Cu doping.     

磁控溅镀法制备Al掺杂ZnO薄膜的特性分析

以射频磁控溅镀法在柔性聚碳酸酯基板上成长Al掺杂ZnO薄膜,利用XRD、AES、霍尔效应测试仪及单色分光计测量分析Al靶功率对薄膜光电特性的影响. XRD分析表明所有薄膜的衍射峰皆以(002)面为主,Al靶功率为25 W时(002)面衍射峰强度最大,此时薄膜结晶性最佳; AES分析表明随着Al靶功率的增大,Al含量由0 at.%增至18.01 at.%,Zn含量则由72.51 at.%降至38.39 at.%,而O含量没有太大变化,这说明Al可以取代ZnO中Zn的位置;霍尔效应测量表明Al靶功率为25 W时电阻率最小,约为7.75×10~(-4)Ω·cm,而载子浓度及其迁移率则达到最大,分别约为9.35×10~(20) cm~(-3)与8.64 cm~2/(V·s);分光计测量表明薄膜在可见光区的平均透射率可约达90%以上,说明本研究制备的Al掺杂ZnO薄膜是具有高透射率的透明导电薄膜.     

Effect of annealing temperature on photocatalytic activity of ZnO thin films prepared by sol-gel method

Zinc oxide thin films are deposited on Si and quartz substrates using the sol-gel method. The thin films, annealed at 400, 600 and 800 °C respectively, are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), ultraviolet-visible spectrophotometer (UV-Vis), fluorescence spectrometer (FL) and the photocatalytic activity is tested by the decomposition of methyl orange dye under UV illumination. The results show that the mean grain size, surface-to-volume ratio, rms roughness and degradation efficiency of the thin films increases with increasing annealing temperature. In particular, ZnO thin film annealed at 800 °C exhibits the highest photocatalytic activity, degrading methyl orange by almost 88% in 180 min. Photocatalytic reaction mechanism of the ZnO thin films is discussed in detail, and the oxygen defects are proposed to be the active sites of the ZnO photocatalyst.     

Luminescence from ZnO/MgO nanoparticle structures prepared by solution techniques

The optical and structural properties of mixed ZnO/MgO particles prepared by solution techniques are investigated by the cathodoluminescence and electron microscopy techniques. The samples annealed at 400–1000 °C show well crystalline wurtzite structure of the ZnO (MgZnO) particles with the size in range of 10–100 nm. Annealing at high temperatures (>700 °C) leads to Mg diffusion in ZnO and Mg_xZn_1−xO alloy formation. The blue shifts of the near-band-edge emission as a result of the alloy band gap widening and quantum confinement effect for the small size particles are demonstrated.     

退火对ZnO:Al薄膜光致发光性能的影响

 采用溶胶-凝胶工艺在石英衬底上制备ZnO:Al（AZO）薄膜,通过不同温度的退火处理,研究了退火对AZO薄膜结构和光致发光特性的影响。XRD图谱表明：所制备的薄膜具有c轴高度择优取向,随着退火温度的升高,(002)峰的强度逐渐增强,同时(002)峰的半高宽逐渐减小,表明晶粒在不断增大。未退火样品的光致发光（PL）谱由361 nm附近的紫外带边发射峰和500 nm附近的深能级发射峰组成。样品经退火后,以500 nm为中心的绿带发射逐渐减弱,而带边发射强度有所增强,并且逐渐红移到366 nm附近,与吸收边移动的测试结果相吻合。对经过不同时间退火的样品分析表明,AZO薄膜的发光特性与退火时间也有很大关系,时间过短可见波段的发射较强,但时间过长会使晶粒发生团聚,导致紫外发射峰强度减弱。     

Annealing effects on electrical and optical properties of ZnO thin films synthesized by the electrochemical method

Microstructural and electrical properties of potentiostatically electrodeposited ZnO thin films from an aqueous bath were investigated after annealing at different temperatures in Ar and 5% H₂/Ar atmospheres. It is confirmed that the bandgap energy of ZnO thin films decreased with annealing from 3.42 to 3.27-3.29 eV by calculating the wavelength of the absorption region. The annealing at temperatures as low as 200 °C decreased the sheet resistance of ZnO thin films because of the extinction of Zn(OH)₂ in the atmosphere. In addition, the sheet resistance of ZnO thin films decreased by annealing in a 5% H₂ atmosphere, which caused an increase of carrier concentration by hydrogen reduction.     

电泳法制备ZnO/YBCO异质结及电学性质研究

采用电泳方法及高温煅烧工艺制备ZnO/YBCO异质结,XRD图谱显示ZnO具有c轴方向的择优取向。在SEM的截面图中可观察到ZnO与YBCO结合致密,放大500倍的表面形貌图呈现织构(textured)的微结构特征,放大5000倍的表面形貌图中可观察微米量级的六方晶粒。通过对ZnO/YBCO异质结的电学性质进行测试,结果显示整流特性。     

Fe掺杂对溶胶凝胶法制备的ZnO: Ni薄膜结构及发光特性的影响

采用溶胶凝胶法在玻璃基片上制备了ZnO及Ni, Fe共掺杂的Zn_0.95-xNi_0.05Fe_xO (x=0, 0.005, 0.01, 0.03, 0.05) 薄膜. 通过扫描电镜(SEM) 和X射线衍射(XRD) 研究了薄膜样品的表面形貌和晶体结构. 结果表明所有样品都具有(002) 择优取向, Fe掺杂导致ZnO: Ni薄膜的晶体质量变差, 晶粒尺寸减小, 但适当的Fe掺杂有利于获得致密、 均匀的薄膜. XPS测试结果表明样品中Ni离子的价态为+2价, Fe离子的价态为+2价和+3价.室温光致发光(PL) 测量表明, 所有样品均观察到较强的紫外发光峰, 蓝光双峰和绿光发光峰. ZnO: Ni薄膜的发光强度可以通过Fe掺杂进行有效调节. 进而我们讨论了Ni, Fe共掺杂ZnO样品的发光机理.     

磁控溅射法制备ZnO/YBCO异质结及电学特性

利用磁控溅射技术在YBCO上沉积ZnO薄膜,获得ZnO/YBCO异质结.测量其不同温度下的电学性质,样品显示良好的整流特性,并且随着温度的升高,ZnO/YBCO异质结电流逐渐增大.     

Influence of glucose on the structural and optical properties of ZnO thin films prepared by sol-gel method

In this work, ZnO thin films were prepared by sol-gel method on glass substrates followed by calcinations at 500 °C for an hour. The effect of glucose on the structure and optical properties of the films was studied. The structural characteristics of the samples were analyzed by X-ray diffractometer (XRD) and atomic force microscope (AFM). The optical properties were studied by a UV-visible spectrophotometer. The results show that some of the prepared ZnO thin films have a high preferential oriented c-axis orientation with compact hexagonal wurtzite structure due to a proper amount of glucose introducing. After introducing the glucose additive in ZnO colloids, the intensity of (002) peak, the transmittance, and the optical band gap of the ZnO thin films increases because of the enhanced ZnO crystallization. On the contrary, the absorbance, the film thickness, and the surface root-mean-square (RMS) roughness of the ZnO thin films decreases. The glucose additive could not only improve the surface RMS roughness and microstructure of ZnO thin films, but also enhance the transmittance and the energy band gap more easily.     

Red luminescence in ZnO films prepared by a glycol-based Pechini method

ZnO thin films on fused quartz substrates were prepared by a glycol-based Pechini method. The structural and optical properties were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), optical transmittance spectrum, and photoluminescence (PL) spectrum. A red emission around 700 nm was found in PL spectrum, and its peak intensity gained a strong enhancement (140%) while annealing temperature increased from 700 °C to 800 °C. The red emission was ascribed to the possible high defect density in boundary layers of nanocrystalline grains.     

Co/Ni多层膜垂直磁各向异性的研究

采用直流磁控溅射法在玻璃基片上制备了Pt底层的Co/Ni多层膜样品, 对影响样品垂直磁各向异性的各因素进行了调制, 通过样品的反常霍尔效应系统的研究了Co/Ni多层膜的垂直磁各向异性. 结果表明, 多层膜中各层的厚度及周期数对样品的反常霍尔效应和磁性有重要的影响. 通过对多层膜各个参数的调制优化, 最终获得了具有良好的垂直磁各向异性的Co/Ni多层膜最佳样品Pt(2.0)/Co(0.2)/Ni(0.4)/Co(0.2)/Pt(2.0), 经计算, 该样品的各向异性常数K_eff 达到了3.6×10⁵ J/m³, 说明样品具备良好的垂直磁各向异性. 最佳样品磁性层厚度仅为0.8 nm, 样品总厚度在5 nm以内, 可更为深入的研究其与元件的集成性.     

Propagations of Rayleigh and Love waves in ZnO films/glass substrates analyzed by three-dimensional finite element method

Propagation characteristics of surface acoustic waves(SAWs) in ZnO films/glass substrates are theoretically investigated by the three-dimensional(3D) finite element method. At first, for(11ˉ20) ZnO films/glass substrates, the simulation results confirm that the Rayleigh waves along the [0001] direction and Love waves along the [1ˉ100] direction are successfully excited in the multilayered structures. Next, the crystal orientations of the ZnO films are rotated, and the influences of ZnO films with different crystal orientations on SAW characterizations, including the phase velocity, electromechanical coupling coefficient, and temperature coefficient of frequency, are investigated. The results show that at appropriate h/λ, Rayleigh wave has a maximum k~2 of 2.4% in(90°, 56.5°, 0°) ZnO film/glass substrate structure; Love wave has a maximum k~2 of 3.81% in(56°, 90°, 0°) ZnO film/glass substrate structure. Meantime, for Rayleigh wave and Love wave devices, zero temperature coefficient of frequency(TCF) can be achieved at appropriate ratio of film thickness to SAW wavelength. These results show that SAW devices with higher k~2 or lower TCF can be fabricated by flexibly selecting the crystal orientations of ZnO films on glass substrates.     

水热法制备In2O3/ZnO异质结及其高的光催化性能

采用简单的两步水热法合成了不同In₂O₃质量比的In₂O₃/ZnO异质结复合材料．通过X射线衍射仪(XRD)、紫外-可见分光光度计(UV-vis)和扫描电子显微镜(SEM)对复合材料的结构、形貌和性能进行了表征．同时还使用UV-vis分光光度计测试了异质结降解罗丹明B(RhB)的光催化活性．实验结果表明,与纯ZnO和In₂O₃相比,In₂O₃的引入将ZnO的吸收光谱扩展到可见光区域,从而提高了其光生电子和空穴的分离．此外,In₂O₃/ZnO异质结在可见光照射对RhB具有较高的光催化活性．5 wt%-In₂O₃/ZnO异质结对RhB的降解率为84.3%,且具有良好的光催化稳定性．In₂O₃/ZnO异质结复合材料在有机染料废水的降解中有更广阔的应用前景．     

LP-MOCVD异质外延ZnO薄膜中的应力及对缺陷的影响

利用低压金属有机化学气相淀积(LP-MOCVD)在Si基片上外延生长ZnO薄膜，制备了两类样品 ：一类是在Si上直接外延ZnO，另一类是在Si上通过SiC过渡层来外延ZnO.根据两类样品的拉 曼光谱、x射线衍射、原子力显微图和光致发光的结果，表明ZnO外延薄膜中的张应力对薄膜 的结晶状况有着重要的影响，使用SiC过渡层能够有效缓解ZnO薄膜中的张应力，减小缺陷浓 度，提高ZnO外延层的质量；然后根据缺陷的形成机制进一步提出，对于ZnO/Si，其中较大 的张应力导致了高浓度的非辐射复合缺陷的形成，使得样品的紫外和绿峰的发射强度均大大 降低；对于ZnO/SiC/Si，其中较小的张应力导致ZnO薄膜中主要形成氧替位缺陷O_{Zn，从而使发光中的绿峰增强. 关键词： ZnO薄膜 应力 缺陷 拉曼光谱}     

Synthesis and structural investigation of Pd/Ag bimetallic nanoparticles prepared by the solvothermal method

Pd/Ag bimetallic nanoparticles have been synthesized successfully by reducing PdCl₂ and AgNO₃ mixture in ethylene glycol solution using the solvothermal method. The prepared samples have been characterized by UV–vis, XRD, TEM, HRTEM, EDS, and XPS, respectively. Moreover, the bimetallic particles possess alloy and core-shell structure from the HRTEM images. Here, the lattice fringe spacing of Pd/Ag bimetallic nanoparticles corresponds to its (111) plane, which is between that of the Pd and Ag nanoparticles prepared under the same conditions. Furthermore, the possible formation mechanism and factors influencing the formation of Pd/Ag bimetallic nanoparticles, such as reaction temperature and time, have also been investigated.     

Current transport in ZnO/Si heterostructure grown by laser molecular beam epitaxy

The n-ZnO/p-Si heterojunction was fabricated by depositing high quality single crystalline aluminium-doped n-type ZnO film on p-type Si using the laser molecular beam epitaxy technique. The heterojunction exhibited a good rectifying behavior. The electrical properties of the heterojunction were investigated by means of temperature dependence current density-voltage measurements. The mechanism of the current transport was proposed based on the band structure of the heterojunction. When the applied bias V is lower than 0.15 V, the current follows the Ohmic behavior. When 0.15V 0.6 V), the space charge limited effect becomes the main transport mechanism. The current-voltage characteristic under illumination was also investigated. The photovoltage and the short circuit current density of the heterojunction aproached 270 mV and 2.10 mA/cm 2 , respectively.