Spatially-separated and photo-enhanced semiconductor corrosion processes for high-efficient and contamination-free electrochemical nanoimprint lithography

Free of any thermoplastic or photocuring resists, electrochemical nanoimprint lithography(ECNL) has emerged as an alternative nanoimprint way to fabricate three-dimensional micro/nano-structures(3D-MNSs) directly on a semiconductor wafer by a spatially-confined corrosion reaction induced by the metal/semiconductor contact potential. However, the consumption of electron acceptors in the ultrathin electrolyte between imprint mold and semiconductor wafer will slow down or even cease the corrosion r...     

Modelling of solid state voltammetry of immobilized microcrystals assuming an initiation of the electrochemical reaction at a three-phase junction

The electrochemical reduction of a solid compound characterized by mixed ionic/electronic conductivity, immobilized on an electrode surface and in contact with an electrolyte solution, has been studied theoretically. The uptake or expulsion of electrons and electrolyte cation is coupled to maintain electroneutrality and is assumed to obey Fick's law of diffusion. Starting with the fully oxidized species, the simultaneous uptake of cations and electrons will be possible at the three-phase junction only, where electrode, solid and electrolyte solution meet. From this point, electrons and cations diffuse perpendicularly into the crystal lattice. The reaction zone grows owing to the formation of the electronically and ionically conducting reduced product. Two- and three-dimensional models have been utilized to simulate the diffusion and the current flow in response to an applied potential step. The resulting chronoamperometric curves have been analyzed with the help of fitting procedures. Under certain conditions, a transition of the three-phase reaction to a pure two-phase reaction occurs. This transition to a two-phase condition is the reason that a number of equations for the exhaustive conversion are similar to those known for planar diffusion, for example. To illustrate this, and for a better understanding of the phenomena, concentration profiles are presented for different degrees of the reaction and for varied simulation conditions. It is demonstrated how geometrical properties like crystal shape (cuboid with x ≠ y ≠ z) and crystal size as well as physical properties, e.g. the diffusion coefficients, govern the electrochemical behavior of mixed ionic/electronic conductors and form the basis of the current-time functions. The numerical simulation of a two-dimensional semi-infinite model of the reaction at the three-phase junction gives results comparable to an algebraical approach. The finite-difference method turned out to be suitable to solve the problems arising from the three-dimensional and finite diffusion conditions and from different crystal shapes. Received: 24 November 1999 / Accepted: 22 February 2000     

Clarification by TEM and SIMS of abnormal Ti depth distribution in chemical solution-deposited SrTiO3/La0.5Sr0.5CoO3

A chemical solution-deposited multilayer system of SrTiO3 ("STO")/La0.5Sr0.5CoO3 ("LSCO") on a platinized wafer with a layer sequence Pt/TiO2/SiO2/Si(bulk) has been investigated by dynamic SIMS (secondary ion mass spectroscopy) and TEM (transmission electron microscopy); element determination was performed with EELS (electron energy-loss spectroscopy). The STO layer is intended to serve as a dielectric layer for a microelectronic capacitor; the conducting LSCO layer is a buffer layer intended to eliminate fatigue effects which usually occur at the STO/Pt interface. The SIMS depth profiles obtained for the main components revealed intense diffusion processes which must have occurred during the deposition/crystallization processes. Ti is found to diffuse from the (insulating) STO layer into the conductive LSCO layer where a region of constant concentration is observable. TEM-EELS experiments showed that these Ti plateaus are caused by precipitates approximately 20-80 nm in diameter.     

Electron-stimulated reactions in thin D2O films on Pt(111) mediated by electron trapping

We have measured the electron-stimulated desorption (ESD) of D(2), O(2), and D(2)O, the electron-stimulated dissociation of D(2)O at the D(2)O/Pt interface, and the total electron-stimulated sputtering in thin D(2)O films adsorbed on Pt(111) as a function of the D(2)O coverage (i.e., film thickness). Qualitatively different behavior is observed above and below a threshold coverage of approximately 2 monolayers (ML). For coverages less than approximately 2 ML electron irradiation results in D(2)O ESD and some D(2) ESD, but no detectible reactions at the water/Pt interface and no O(2) ESD. For larger coverages, electron-stimulated reactions at the water/Pt interface occur, O(2) is produced and the total electron-stimulated sputtering of the film increases. An important step in the electron-stimulated reactions is the reaction between water ions (generated by the incident electrons) and electrons trapped in the water films to form dissociative neutral molecules. However, the electron trapping depends sensitively on the water coverage: For coverages less than approximately 2 ML, the electron trapping probability is low and the electrons trap preferentially at the water/vacuum interface. For larger coverages, the electron trapping increases and the electrons are trapped in the bulk of the film. We propose that the coverage dependence of the trapped electrons is responsible for the observed coverage dependence of the electron-stimulated reactions.     

Area-selective formation of macropore array by anisotropic electrochemical etching on an n-Si(100) surface in aqueous HF solution

A photoassisted anodization process to fabricate arrays of uniform and straight macropores at selected areas of a Si wafer surface was developed. The front- and backside surfaces of n-type Si(100) wafers were coated with a thin Si(3)N(4) layer, and the frontside layer was micro-patterned using photolithography and reactive ion etching to form an array of microscopic openings at selected areas. The inverted pyramid-shape micropits were formed at these openings by anisotropic etching using aqueous KOH solution; these pits act as the initiation sites for the anodization to form macropores. The electrochemical etching was carried out in aqueous HF solution under illumination from the backside of the wafer, on which Au/Cr electric contact was formed following removal of the Si(3)N(4) layer. To improve the uniformity of the formation condition of the macropores at the selected area, holes were area-selectively generated by controlling the illumination condition during the anodization. For this, micropatterns were formed on the Au/Cr layer at the backside surface, which were aligned to those at the frontside surface. The parameters, such as HF concentration, current density, and wafer thickness, i.e., hole diffusion length, were optimized, and the arrays of uniform and high-aspect-ratio macropores were formed at the selected area of the domain at the silicon surface.     

A surface science approach to cathode/electrolyte interfaces in Li-ion batteries: Contact properties,charge transfer and reactions

Reactions and charge transfer at cathode/electrolyte interfaces affect the performance and the stability of Li-ion cells. Corrosion of active electrode material and decomposition of electrolyte are intimately coupled to charge transfer reactions at the electrode/electrolyte interfaces, which in turn depend on energy barriers for electrons and ions. Principally, energy barriers arise from energy level alignment at the interface and space charge layers near the interface, caused by changes of inner electric (Galvani) potential due to interfacial dipoles and concentration profiles of electronic and ionic charge carriers.In this contribution, we introduce our surface science oriented approach using photoemission (XPS, UPS) to investigate cathode/electrolyte interfaces in Li-ion batteries. After an overview of the processes at cathode/electrolyte interfaces as well as currently employed analysis methods, we present the fundamentals of contact potential formation and energy level alignment (electrons and ions) at interfaces and their analysis with photoemission. Subsequently, we demonstrate how interface analysis can be employed in Li-ion battery research, yielding new and valuable insights, and discuss future benefits.     

Preparation of Barium Titanate with Patterned Microstructure by a Novel Electrophoretic Deposition Method

In order to prepare barium titanate (BaTiO₃) with patterned microstructure, a novel electrophoretic method that uses a partially hydrolyzed highly concentrated solution of barium and titanium alkoxides was developed. By using electron beam lithography, a micro-patterned mold, that is a mold with an array of air holes of 250 nm arranged in a triangular lattice with a lattice constant of 500 nm was prepared on a Pt/Ti/SiO₂/Si substrate. Electrophoretic deposition of BaTiO₃ gel was carried out by negatively biasing the Pt/Ti/SiO₂/Si substrate as cathode which had the resist mold on the surface. Removal of the resist mold left a gel material with a patterned structure that was transferred from the pattern of the mold. The gel material was confirmed by ICP-AES to have nearly the stoichiometric composition of BaTiO₃, that is, a composition in which Ba:Ti = 1:1 in molar ratio.     

Effects of Pt diffusion barrier layer on the interface reaction and electric properties of PZT film/Si (111) sample

The effects of the Pt diffusion barrier layer on the interface diffusion and reaction, crystallization, dielectric and ferroelectric properties of the PZT/Si(111) sample have been studied using XPS, AES and XRD techniques. Hie results indicate that the Pt diffusion barrier layer between the PZT layer and the Si substrate prohibits the formation of TiCx TiSix and SiO2 species in the PZT layer. The Pt barrier layer also completely interrupts the diffusion of Si from the Si substrate into the PZT layer and impedes the diffusion of oxygen from air to the Si substrate greatly. Although the Pt layer can not prevent completely the diffusion and reaction between oxygen and silicon, it can prevent the formation of a stable SiO2 interface layer on the interface of PZT/Si. The Pt layer reacts with silicon to form PtSix species on the interface of Pt/Si, which can intensify the chemical binding strength between the Pt layer and the Si substrate. To play a good role as a diffusion barrier layer, the Pt barrier layer     

The enhancement of photoluminescence of n-type porous silicon by Hall-effect assistance during electrochemical anodization

In this study, n-type porous silicon (n-PS) films with high-aspect-ratio Si-tips are formed with the assistance of Hall-effect during the electrochemical anodization. Lorentz force sweeps down the majority carriers (electrons) in n-type Si to enhance the anodization etching. Surface layers are inverted from n-type to p-type, so sufficient holes can continuously appear on the surface to participate in chemical reaction during the etching process. Illumination is not necessary in this process, so the problem of illumination-depth limitation is solved. The etching current, morphology, and photoluminescence of the n-PS prepared in this way are investigated. Strong visible photoluminescence emissions at room temperature are demonstrated on n-PS.     

High sensitivity Schottky junction diode based on monolithically grown aligned polypyrrole nanofibers: Broad range detection of m-dihydroxybenzene

Aligned p-type polypyrrole (PPy) nanofibers (NFs) thin film was grown on n-type silicon (100) substrate by an electrochemical technique to fabricate Schottky junction diode for the efficient detection of m-dihydroxybenzene chemical. The highly dense and well aligned PPy NFs with the average diameter (∼150–200 nm) were grown on n-type Si substrate. The formation of aligned PPy NFs was confirmed by elucidating the structural, compositional and the optical properties. The electrochemical behavior of the fabricated Pt/p-aligned PPy NFs/n-silicon Schottky junction diode was evaluated by cyclovoltametry (CV) and current (I)-voltage (V) measurements with the variation of m-dihydroxybenzene concentration in the phosphate buffer solution (PBS). The fabricated Pt/p-aligned PPy NFs/n-silicon Schottky junction diode exhibited the rectifying behavior of I–V curve with the addition of m-dihydroxybenzene chemical, while a weak rectifying I–V behavior was observed without m-dihydroxybenzene chemical. This non-linear I–V behavior suggested the formation of Schottky barrier at the interface of Pt layer and p-aligned PPy NFs/n-silicon thin film layer. By analyzing the I–V characteristics, the fabricated Pt/p-aligned PPy NFs/n-silicon Schottky junction diode displayed reasonably high sensitivity ∼23.67 μAmM⁻¹cm⁻², good detection limit of ∼1.51 mM with correlation coefficient (R) of ∼0.9966 and short response time (10 s).     

Kinetics of processes occurring at a H<Subscript>3</Subscript>PW<Subscript>12</Subscript>O<Subscript>40</Subscript>/Pt,H<Subscript>2</Subscript> interface depending on the platinum content on the electrode

Kinetics of processes occurring at H⁺/solid electrolyte/Pt, H₂ three-phase interface are studied subject to the platinum content on the electrode. The study was performed with model electrochemical cells PbO₂/H₃PW₁₂O₄₀/Pt with different platinum content at the working electrode that consisted of platinum deposited onto the E-Tek LT1200-N carbon-nanotubes paper. On the basis of the obtained results, the occurring processes were practically fully separated. It is shown by the analyzing of relaxation curves that there exist at least two processes in the system: the faster one corresponds to the hydrogen reaction; the slower, to the oxygen one. The rates of both processes depend on the platinum content at the working electrode; they have an extreme at the platinum concentration of 0.5 mg/cm². Impedance data allowed revealing the processes’ limiting stages. The experimental data allowed suggesting that at low platinum content the relaxation time is determined by the electrochemical reaction rate; at higher content, by gas diffusion through the platinum dense layer.     

Oxygen and nitrogen tailoring carbon fiber aerogel with platinum electrocatalysis interfaced lithium/sulfur (Li/S) batteries

Sluggish kinetics of lithium/sulfur (Li/S) conversion chemistry and the ion channels formation in the cathode is still a bottleneck for developing future Li/S batteries with high-rate, long-cycling and high-energy. Here, a rational cathode structure design of an oxygen (O) and nitrogen (N) tailoring carbon fiber aerogel (OCNF) as a host material integrated with platinum (Pt) electrocatalysis interface is employed to regulate Li/S conversion chemistry and ion channel. The Pt nanoparticles were uniformly sprayed onto the S surface to construct the electrocatalysis interface (Pt/S/OCNF) for generating ion channels to promote the effective penetration of electrolyte into the cathode. This Pt/S/OCNF gives the cathode a high sulfur utilization of 77.5%, an excellent rate capacity of 813.2 mAh/g (2 C), and an outstanding long-cycling performance with a capacitance retention of 82.6% and a decay of 0.086% per cycle after 200 cycles at 0.5 C. Density functional theory (DFT) calculations reveal that the Pt electrocatalysis interface makes the cathode a high density of state (DOS) at Fermi level to facilitate the electrical conductivity, charge transfer kinetics and electrocatalysis to accelerate the lithium polysulfides (LiPSs) electrochemical conversion. Furthermore, the unique chemisorption structure and adsorption ability of Li₂S_n (n = 1, 2, 4, 6, 8) and S₈ on OCNF are attributed to the bridging effects of interfacial Pt and the bonding of N-Li. The Pt electrocatalysis interface combined with the unique 3D hierarchical porous structure and abundant functional active sites at OCNF guarantee strong adsorption confinement, fast Li/S electrocatalytic conversion and unblocked ion channels for electrolyte permeation in cathode.     

Delivering octadecylphosphonic acid self-assembled monolayers on a Si wafer and other oxide surfaces

We describe a simple experimental approach for delivering self-assembled monolayers (SAMs) of octadecylphosphonic acid (OPA) on many oxide surfaces using a nonpolar medium with a dielectric constant around 4 (e.g., trichloroethylene). This approach readily results in the formation of full-coverage OPA SAMs on a wide variety of oxide surfaces including cleaved mica, Si wafer, quartz, and aluminum. Especially, the availability of delivering full-coverage OPA SAM on a Si wafer is unique, as no OPA SAMs at all could be formed on a Si wafer when using a polar OPA solution. The reason a nonpolar solvent is superior lies in the very fact that the hydrophilic OPA headgroup tends to escape from the nonpolar solution and is thus enriched at the medium-air interface. It is these OPA headgroups seeking a hydrophilic surface that make possible the well-controlled OPA monolayer on an oxide surface.     

Calculation of the surface potential and surface charge density by measurement of the three-phase contact angle

The silica/silicon wafer is widely used in the semiconductor industry in the manufacture of electronic devices, so it is essential to understand its physical chemistry and determine the surface potential at the silica wafer/water interface. However, it is difficult to measure the surface potential of a silica/silicon wafer directly due to its high electric resistance. In the present study, the three-phase contact angle (TPCA) on silica is measured as a function of the pH. The surface potential and surface charge density at the silica/water surface are calculated by a model based on the Young-Lippmann equation in conjunction with the Gouy-Chapman model for the electric double layer. In measurements of the TPCA on silica, two distinct regions were identified with a boundary at pH 9.5-showing a dominance of the surface ionization of silanol groups below pH 9.5 and a dominance of the dissolution of silica into the aqueous solution above pH 9.5. Since the surface chemistry changes above pH 9.5, the model is applied to solutions below pH 9.5 (ionization dominant) for the calculation of the surface potential and surface charge density at the silica/aqueous interface. In order to evaluate the model, a galvanic mica cell was made of a mica sheet and the surface potential was measured directly at the mica/water interface. The model results are also validated by experimental data from the literature, as well as the results obtained by the potentiometric titration method and the electro-kinetic measurements.     

Electrochemistry at conductor/insulator/electrolyte three-phase interlines: A thin layer model

A thin layer model is proposed to assist in the understanding of the electrochemical conversion of insulator to conductor at the conductor/insulator/electrolyte three-phase interline (3PI) when the influence of mass diffusion in the electrolyte phase is negligible. The model predicts, under potentiostatic conditions, a linear variation of the current or the length of the 3PI with time. When polarization is sufficiently large, the logarithm of the current/time ratio or the 3PI-length/time ratio, according to the model, increases linearly with the applied potential. These predictions were tested against and agreed very well with two practical systems: the electroreduction of solid AgCl to Ag in aqueous KCl and of solid SiO2 to Si in molten CaCl2. Kinetic parameters were derived from experimental data using the model. Particularly, the electron transfer coefficient, alpha, was found to be about 0.29 for the reduction of AgCl to Ag in the aqueous KCl solution at room temperature but about 10(-2) for the reduction of SiO2 to Si in molten CaCl2 at 850 degrees C.     

Pt/CeO2/SBA-15催化剂上Pt-CeO2接触界面的相互作用

通过沉积沉淀法(Deposition precipitation, DP)将CeO2纳米粒子高度分散在SBA-15分子筛上, 进一步采用浸渍法负载Pt后制备了 Pt/CeO2/SBA-DP催化剂. 紫外-可见漫反射光谱分析表明, 在Pt/CeO2/SBA-DP催化剂上可以形成更多的Pt-CeO2接触界面, 有利于从CeO2到Pt的电子转移过程. CO程序升温还原(CO-TPR)测试证实, Pt/CeO2/SBA-DP催化剂上CeO2表面氧物种具有较高的还原能力.     

Single crystalline ordered silicon wire/Pt nanoparticle hybrids for solar energy harvesting

In this work, we developed a method combining lithography and metal-catalyzed Si etching to fabricate highly ordered Si wire arrays with uniform coverage over an entire 4 in. wafer. The wire periodicity and dimensions depend on the lithography and the etching conditions. Photoelectrochemical measurements show that the as-prepared Si wire samples are photoactive owing to surface enhancement and become especially effective in solar-to-electrical conversion and water splitting after surface modification with Pt nanoparticles.     

利用强度调制光电流/光电压谱研究碳点/KOH电解液界面的动力学行为

通过强度调制光电流谱(IMPS)和强度调制光电压谱(IMVS)技术研究在光电分解水制氢体系中碳点光阳极与KOH电解液界面的动力学行为。结果表明,光强在30–90 m W·cm~(-2)范围内,界面的电子传输时间(τ_d)、电子寿命(τ_n)、电子扩散系数(D_n)、电子扩散长度(L_n)均没有变化;当光强增加到110和130 m W·cm~(-2)时,τ_d和τ_n延长,而D_n减小。实验表明,不同于Ti O_2/电解液等界面,碳点光电极/电解液界面中碳点电极存在的缺陷少,因此电子主要以无陷阱限制扩散方式传输为主。且在30–130 m W·cm~(-2)的光强范围内,与τ_d和τ_n相关的载流子收集效率(η_(cc))相近。     

A comparative study on electrochemical micromachining of n-GaAs and p-Si by using confined etchant layer technique

The confined etchant layer technique has been applied to achieve effective three-dimensional (3D) micromachining on n-GaAs and p-Si. This technique operates via an indirect electrochemical process and is a maskless, low-cost technique for microfabrication of arbitrary 3D structures in a single step. Br(2) was electrogenerated at the mold surface and used as an efficient etchant for n-GaAs and p-Si; l-cystine was used as a scavenger, for both substrates. The resolution of the fabricated microstructure depended strongly on the composition of the electrolyte, and especially on the concentration ratio of l-cystine to Br(-). A well-defined, polished Pt microcylindrical electrode was employed to examine the deviation of the size of the etched spots from the real diameter of the microelectrode. The thickness of the confined etchant layer can be estimated, and thus the composition of the electrolyte can be optimized for better etching precision. The etched patterns were approximately negative copies of the mold, and the precision of duplication could reach the micrometer level for p-Si and the submicrometer level for n-GaAs. Although the same etchant (Br(2)) and scavenger (l-cystine) were used in the etching solutions for GaAs and Si, the etching process, or mechanism, is completely different in the two cases. Compared with the fast etching process on GaAs in an etching solution with a concentration ratio of 3:1 of l-cystine to Br(-), the concentration ratio needs to be 50:1 for etching of Si. For the micromachining of Si, the addition of a cationic surfactant (cetyltrimethylammonium chloride, CTACl) is necessary to reduce the surface tension of the substrate and hence reduce the influence of evolution of the byproduct H(2). The function of the surfactant CTACl in comparison with an anionic surfactant (sodium dodecyl sulfate) was studied in contact-angle experiments and micromachining experiments and then is discussed in detail.