Potentiometric determination of boron in silicon with an ion-selective electrode

A potentiometric method is proposed for the determination or boron in silicon, based on dissolution of silicon by treatment with hydrofluoric acid and ammonium fluoride in the presence of hydrogen peroxide, and conversion of boron to fluoroborate ion. The fluoroborate activity is measured with the Orion fluoroborate-selective electrode. Some important points, such as the effect of various interfering ions and the hydrolysis of fluoroborate ion, are described in detail. The method is applied to the determination of boron in silicon containing at least 10 p.p.m. of boron, with a relative standard deviation of ±4%.     

Improved sensitivity for boron and silicon in flame spectrometry by a fluoride evolution technique

Improved sensitivity can be achieved for boron and silicon by the introduction of their volatile fluorides into chemical combustion flames. The fluorides are produced by reaction with copper hydroxyfluoride. The apparatus consists of a graphite crucible, a resistance furnace and a water jet pump modified to operate with air. The feasibility of this technique for the determination of boron by flame emission, and silicon by atomic absorption, has been demonstrated for solutions and solids.     

Effects of double promoters on direct synthesis of triethoxysilane in gas–solid stirred fluidized bed

The reaction of silicon with ethanol was carried out in a gas–solid stirred fluidized bed, with cuprous chloride prepared by a wet process as the catalyst. The effect of hydrogen fluoride and ethyl chloride addition on formation of triethoxysilane in the direct process was described and discussed. The catalytic activity was evaluated using online gas chromatography, X‐ray diffraction and scanning electron microscopy to study the contact mass. The results show that the promoters hydrogen fluoride and ethyl chloride not only supplemented anions, but also depressed the catalytic activity of metallic copper. The comparison of technical‐grade silicon and polycrystalline silicon showed many differences in reactivity, reaction rate and induction period. Furthermore, the yield, selectivity of triethoxysilane and reaction rate were improved significantly with additions of hydrogen fluoride and ethyl chloride. Copyright © 2011 John Wiley & Sons, Ltd.     

Novel Electroless Deposition of Cu<Subscript>3</Subscript>Se<Subscript>2</Subscript> Film on Silicon Substrate by a Simple Galvanic Displacement Process

A novel electroless deposition method for depositing highly uniform adhesive thin films of copper selenide (Cu₃Se₂) on silicon substrates from aqueous solutions is described. The deposition is carried out by two coupled galvanic reactions in a single deposition bath containing copper cations, hydrogen fluoride, and selenous acid: the galvanic deposition of copper on silicon and the subsequent galvanic reaction between the deposited copper with selenous acid in the deposition bath. The powder X-ray diffraction and scanning electron microscopy are used to characterize and examine the deposited films.     

Impact sensitivity of energy systems based on nanoporous silicon and oxidant: influence of the hydrogen content and specific surface

The impact sensitivity of the energy systems based on nanoporous silicon, obtained by electrochemical etching of monocrystalline silicon wafers in an HF-containing electrolyte, and calcium perchlorate was studied using a modified Weller—Ventselberg technique (estimation of the impact sensitivity of initiating explosives). The impact sensitivity of these systems is shown to be determined by both the presence of hydrogen, which is stored on the porous silicon surface during the preparation of the latter, and also the influence of other factors, including the specific surface of porous silicon. The composition, amount of the generated gas, and gas evolution rate during nonisothermal and isothermal calcination of porous silicon in a temperature range of 60—120 °С were determined using methods of thermal gravimetry (TG), measurement of the gas volume, and mass spectrometry. The generated gas almost completely consists of hydrogen, and its content in the studied samples of porous silicon achieved ~3.8 wt.%. The calculated activation energy of the hydrogen evolution process in vacuo was 103.7±3.3 kJ mol^–1. The dependences of the impact sensitivity of the energy composition based on porous silicon and heat of combustion of porous silicon on oxygen on the hydrogen content were established. The impact sensitivity of the energy system decreases with a decrease in the hydrogen content in porous silicon and its specific surface.     

Complexometric determination of copper and iron in silicon with a cupric ion-selective electrode

A method is described for the complexometric determination of copper(II) and iron(III) in silicon with the cupric ion-selective electrode as endpoint detector. The sample is dissolved with hydrogen fluoride, hydrogen peroxide, and gold(III) as catalyst. The silicon matrix is then removed distilling off the azeotropic mixture containing hydrofluorosilicic acid. The residue is dissolved with 0.5 M sulfuric acid and the resulting solution divided into two parts. Copper is determined over the first by TETREN at pH 5.0–6.0. The copper-iron sum is determined over the second part, by EDTA at pH 1.0–1.5. The effect of Al(III), Mn(II), and Zn(II) ions is investigated. Applications of the method of the determination of copper and iron in silicon samples from different manufacturers, is illustrated. Copper at level of 10 ppm was analyzed with a relative standard deviation of 6%. Iron at level of 5000 ppm was analyzed with a relative standard deviation of about 2.5%.     

A new synthetic procedure for the preparation of pyridinium tetrafluoroborate and hexafluorosilicate

Pyridinium tetrafluoroborate (C₅H₅NHBF₄) and pyridinium hexafluorosilicate [(C₅H₅NH)₂SiF₆] have been prepared in good yields and high purity by the reaction of pyridinium poly(hydrogen fluoride) with oxides and acids of boron and silicon respectively. The salts have been characterised by melting points, IR, ¹H and ¹⁹F NMR spectroscopy and chemical analysis.     

Spectrochemical determination of tungsten and boron in mineral matrix

The spectrochemical behavior of nonvolatile tungsten and boron was tested by adding different buffers and using 12 A ac arc excitation. The oxidization and sulfidization processes were found to be most effective for facilitating the volatilization. The optimal admixture was the copper oxide buffer for both the detection limit and the precision of the method. The reference values of the background or a palladium line blackening were used.     

火焰原子吸收光谱法测定铜冶炼渣中镍

通过对铜冶炼渣化学组成和性质的研究,确定了测定镍的实验方法。铜冶炼渣中二氧化硅含量在20%~40%,硫含量10%~20%,样品的分解具有一定的难度,必然影响镍的测定结果,因此需在样品分解过程中加入一定量的氟化氢铵、溴使二氧化硅生成四氟化硅、硫生成硫化氢挥发除去,溶液中其余共存元素主要有铜、银、铁、锌等元素不干扰测定结果,在硝酸(5%)介质中,用火焰原子吸收光谱法测定镍的含量,测定范围为0.01%~1%,加标回收率在99.5%~100.4%,测定结果的相对标准偏差(n=7)在0.61%~1.18%,检出限为0.004μg/mL,方法快速,简捷,能够满足日常生产检测需要。     

Quantum-chemical study of interaction of dipyrrolylmethenes with boron trifluoride and other lewis acids

The geometric parameters and energies of the products of donor-acceptor interaction of dipyrrolylmethenes with BF₃ and other inorganic Lewis acids were calculated by quantum-chemical methods. The bond nature and the energies of formation of the donor-acceptor complexes under consideration were analyzed. It was shown that the complexes with p-element fluorides are noticeably stabilized by hydrogen bonds involving the hydrogen atom of the NH group of dipyrrolylmethene and the nearest fluorine atom of a Lewis acid. Hydrogen bonding promotes further elimination of HF in the synthesis of boron fluoride complexes of dipyrrolylmethenes. The energy profile was calculated for the reaction of formation of the boron fluoride complex with dipyrrolylmethene through the intermediate donor-acceptor complex.     

火焰原子吸收光谱法测定铜原尾矿中铅量的研究

铜原尾矿中硅含量较高,针对这一特性,本文提出了试样采用饱和氟化氢铵、盐酸、硝酸溶解,在5%的硝酸介质中,于原子吸收光谱仪上,使用空气—乙炔火焰进行铅的测定,建立了铜原尾矿中铅的测定方法。研究结果表明铅的质量浓度在0.05～3μg/mL范围内与吸光度A有良好的线性关系,方法的相对标准偏差0.92%到2.39%,加标回收率96.0%到106.0%,方法以三倍的空白溶液11次测定值的标准偏差作为检出限,检出限0.08μg/mL。     

Spectrophotometric determination of traces of boron in silicon by means of solvent extraction

A spectrophotometric method for the determination of boron in silicon based on the extraction of the methylene blue-fluoroborate complex has been improved. Some important points, such as the dissolution of silicon with hydrofluoric acid and hydrogen peroxide, the effect of various anions on the blank absorbance and the best working conditions for forming and extracting the complex, have been studied. The method is applied to the determination of boron in silicon containing at least 1 p.p.m. of boron, with a relative standard deviation of ±5%.     

基于有机硼化合物的氟离子化学传感器的研究进展

有机硼化合物中硼原子空的pπ轨道使其作为路易斯酸能够选择性的结合氟离子,其与氟离子的结合破坏了硼中心与芳香取代基的pπ-π共轭,引起有机硼化合物光物理性质的变化。因此,有机硼化合物能够用作高选择性的氟离子化学传感器材料。本文从具有三芳基硼结构及硼酸或硼酸酯结构的这两类有机硼化合物出发,综述了它们在氟离子化学传感器领域的研究进展。     

The possibility of separating hydrogen fluoride from its gaseous mixture with silicon tetrafluoride

We report in this paper investigations of the conditions necessary to effect the selective absorption of hydrogen fluoride from its gaseous mixture with silicon tetrafluoride when that mixture is brought into contact with solid sodium fluoride. Thus, when an anhydrous HF-SiF₄ gas mixture is brought into contact with granular NaF at room temperature only hydrogen fluoride is absorbed (giving NaF·HF), while silicon tetrafluoride remains in the gaseous state. In this way it is possible to separate HF from SiF₄. The hydrogen fluoride may subsequently be regenerated by heating the sodium hydrogen fluoride at 350–400°¹. If, however, the gaseous mixture contains only small traces of water vapor then SiF₄ also reacts with NaF to give Na₂SiF₆ in addition to NaF·HF. Under these circumstances it is not possible to effect a separation.     

A method for the simultaneous detection of hydrogen fluoride and fluorine

A relatively simple and rapid method for detecting hydrogen fluoride and elemental fluorine is described. A solution containing sodium bicarbonate and potassium bromide is treated with the gas. Hydrogen fluoride immediately liberates carbon dioxide from the bicarbonate; elemental fluorine immediately colours the solution and then causes the evolution of oxygen, hydrogen peroxide and hydrogen fluoride. A mixture of fluorine and hydrogen fluoride simultaneously colours the solution and evolves carbon dioxide.     

Nuclear reaction analysis of boron and oxygen in silicon

The main characteristics of analysis by the nuclear method at low energy are summarized. The experimental set-up, and especially the target chamber arrangement are shown. Nuclear analyses of boron and oxygen in a silicon substrate are presented; sensitivity, accuracy and competing reactions have been studied. The analysis of boron and oxygen is possible, although these elements give interfering reactions. Results concerning homogeneity in the sample surface (for diffused or implanted boron), a diffusion study (SiO₂−Si exchange) and profile measurements are presented.     

Asymmetric Catalysis with Silicon‐Based Cuprates: Enantio‐ and Regioselective Allylic Substitution of Linear Precursors

An enantio‐ and regioselective allylic silylation of linear allylic phosphates that makes use of catalytically generated cuprate‐type silicon nucleophiles is reported. The method relies on soft bis(triorganosilyl) zincs as silicon pronucleophiles that are prepared in situ from the corresponding hard lithium reagents by transmetalation with ZnCl₂. With a preformed chiral N‐heterocyclic carbene–copper(I) complex as catalyst, exceedingly high enantiomeric excesses are achieved. The new method is superior to existing ones using a silicon–boron reagent as the source of the silicon nucleophile.     

Neutron activation analysis of the process of metal gettering in silicon slices

Neutron activation analysis is used to study the process of Cu gettering in a silicon wafer in which differently doped and disordered regions are present. The results show a strong preference of the copper atoms to be concentrated in the n⁺(p⁺) and in the n⁺ regions. The effectivity of the gettering process can be increased by thermal growth of the defects present in the boron implanted layers.     

Highly selective two-photon chemosensors for fluoride derived from organic boranes

[reaction: see text] Three organoboron compounds are shown to be two-photon fluorescent sensors for fluoride anion with high sensitivity and selectivity. The recognition mechanism is attributed to the unique steric structure of the bulky dimesitylboryl group and the Lewis acid-base interaction between trivalent boron atom and fluoride anion.     

The morphology of ceramic phases in BxC-SiC-Si infiltrated composites

The present communication is concerned with the effect of the carbon source on the morphology of reaction bonded boron carbide (B₄C). Molten silicon reacts strongly and rapidly with free carbon to form large, faceted, regular polygon-shaped SiC particles, usually embedded in residual silicon pools. In the absence of free carbon, the formation of SiC relies on carbon that originates from within the boron carbide particles. Examination of the reaction bonded boron carbide revealed a core-rim microstructure consisting of boron carbide particles surrounded by secondary boron carbide containing some dissolved silicon. This microstructure is generated as the outcome of a dissolution-precipitation process. In the course of the infiltration process molten Si dissolves some boron carbide until its saturation with B and C. Subsequently, precipitation of secondary boron carbide enriched with boron and silicon takes place. In parallel, elongated, strongly twinned, faceted SiC particles are generated by rapid growth along preferred crystallographic directions. This sequence of events is supported by X-ray diffraction and microcompositional analysis and well accounted for by the thermodynamic analysis of the ternary B-C-Si system.