氧含量对BiFeOδ多晶陶瓷介电特性的影响

采用固相反应法制备了不同含氧量的BiFeO_δ多晶陶瓷样品，利用HP4294A阻抗分析仪测量了样品的介电特性随频率和氧含量的变化，用正电子湮没寿命谱学的方法研究了样品中因氧含量的变化所引起的结构缺陷. 实验结果表明：引入氧空位和氧填隙离子缺陷都会使介电常数减小，而介电损耗则随氧含量的增加而增加，二者的变化范围均在10%—35%之间；对不同氧含量的BiFeO_δ样品，介电常数和介电损耗随测量频率的增加而减小. 氧空位的引入使得局域电子密度变小，正电子平均寿命τ_m增加. 在氧含量δ=2.99时电子密度最大(n_e=3.90×10²³/cm³)，继续增加氧含量对正电子寿命与局域电子密度的影响不大. BiFeO_δ样品的介电常数和介电损耗随氧含量的变化可以在空间电荷限制电导的框架下来理解.     

Effect of Ba and Ho co-doping on crystal structure,phase transformation,magnetic properties and dielectric properties of BiFeO3

Multiferroics having composition Bi_0.80-xBa_0.20Ho_xFeO₃ (BBFO, BBHFO5, BBHFO10, BBHFO15 and BBHFO20 for x?=?0.0, 0.05, 0.10, 0.15 and 0.20 respectively) were synthesized by method of solid state reaction. The crystal structure has been studied using X-ray diffraction technique. The X-ray patterns show enormous transform in crystal structure at concentration x?=?0.20. The Rietveld refinement of XRD patterns indicates that at concentration x?=?0.0 sample have rhombohedral structure with R3c space group while for the concentration x?=?0.05, 0.10, 0.15 and 0.20, the mixed phase including rhombohedral R3c and triclinic P1 space groups were obtained with best fitting. This phase transformation in crystal structure is observed due to mismatching of ionic radii of doped ions and parent ions. Magnetic properties of all samples were carried out by using vibrating sample magnetometry. M-H hysteresis loops shows that with doping of Ba and Ho antiferromagnetic BiFeO₃ (BFO) transforms into ferromagnetic. The dielectric and ferroelectric measurements were carried out which shows that dielectric constant, dielectric loss and ferroelectric properties are enhanced with co-doping of Ho in comparison of the pristine BFO due to structure deformation and decrease in oxygen vacancies with higher concentration of Ho. Significant improvement has been observed in dielectric constant and remnant magnetization values with increasing content of Ho and decrease in the dielectric loss.     

Effect of BiFeO3 addition on Bi2O3–ZnO–Nb2O5 based ceramics

In this paper, low temperature sintering of the Bi₂(Zn_1/3Nb_2/3)₂O₇ (β-BZN) dielectric ceramics was studied with the use of BiFeO₃ as a sintering aid. The effects of BiFeO₃ contents and the sintering temperature on the phase structure, density and dielectric properties were investigated. The results showed that the sintering temperature could be decreased and the dielectric properties could be retained by the addition of BiFeO₃. The structure of BiFeO₃ doped β-BZN was still the monoclinic pyrochlore phase. The sintering temperature of BiFeO₃ doped β-BZN ceramics was reduced from 1000 °C to 920 °C. In the case of 0.15 wt.% BiFeO₃ addition, the β-BZN ceramics sintered at 920 °C exhibited good dielectric properties, which were listed as follows: ε_r = 79 and tan δ = 0.00086 at a frequency of 1 MHz. The obtained properties make this composition to be a good candidate for the LTCC application.     

Oxygen vacancy in LiTiPO5 and LiTi2(PO4)3: A first-principles study

The structures of LiTiPO₅ and LiTi₂(PO₄)₃, as well as the possibility of oxygen vacancies formation in the systems are studied by first-principles calculations. It is found that oxygen vacancies can be formed in LiTiPO₅ and LiTi₂(PO₄)₃ under oxygen poor condition. The formation of oxygen vacancies introduce a defect band within their band gaps, which is expected to improve the electronic conductivity of LiTiPO₅ and LiTi₂(PO₄)₃ significantly. Meanwhile, a great concentration of oxygen vacancies may increase the discharge voltage of LiTiPO₅ and LiTi₂(PO₄)₃.     

Impact of annealing atmosphere on the multiferroic and dielectric properties of BiFeO3/Bi3.25La0.75Ti3O12 thin films

Multiferroic BiFeO₃/Bi_3.25La_0.75Ti₃O₁₂ films annealed in different atmospheres (N₂ or O₂) were prepared on Pt/Ti/SiO₂/Si substrates via a metal organic decomposition method. Based on our experimental results, it is considered that, in the films annealed in N₂, fewer Fe²⁺ ions while more oxygen vacancies are involved. As a result, at room temperature, predominated by the reduced Fe²⁺ fraction, lower leakage current and dielectric loss, better ferroelectric property while reduced magnetization are observed. However, the oxygen vacancies might be thermally activated at elevated temperature; thus, more strongly temperature-dependent leakage current and a higher dielectric relaxation peak are observed for the films annealed in N₂.     

Na0.25K0.25Bi0.5TiO3无铅压电陶瓷的介电特性研究

用固相反应法制备了Na_0.25K_0.25Bi_0.5TiO₃ (NKBT50)陶瓷，研究了该陶瓷在室温至400℃温度范围内的介电性能.发现该陶瓷的介电温谱与烧结气氛、极化状态有关.在空气中烧结的未极化样品在70℃附近存在介电和损耗峰，而极化后及在氧气氛中烧结的样品并不存在该介电、损耗峰.分析认为70℃的介电和损耗峰与氧空位形成的缺陷偶极子的极化弛豫有关.热激电流显示，陶瓷的去极化温度为225℃，与此相对应的介电、损耗峰也 关键词： 介电性能 氧空位 极化弛豫 钛酸铋钠钾     

Vibrational and dielectric properties of La2Hf2O7 : Experiment and theory

The physical origin of the static dielectric constant and its relationship with lattice dynamics of La₂Hf₂O₇are studied by combining infrared spectroscopy and density functional perturbation theory (DFPT). Both La and Hf show obvious effective charge anomaly which is attributed to the hybridization between 2p states of the oxygen and 5d states of the cations, indicating a mixed covalent-ionic bonding between the cations and the oxygen. The dielectric response is determined by seven infrared phonon modes and the static dielectric constant extracted from infrared reflection spectrum is in close agreement with DFPT calculation. Both experiment and theory reveal that most of the contributions to the static dielectric constant are dominated by three infrared phonon modes at 137, 172 and 297 cm⁻¹. Two of them (172 and 297 cm⁻¹) are from the displacements of oxygen atoms inside HfO₆ octahedra and the other one (137 cm⁻¹) is from the bending of La₂O′ chain. This result indicates that the origin of the static dielectric constant of La₂Hf₂O₇ is directly connected with the two interpenetrating sub-networks of pyrochlore structure (HfO₆ octahedra and La₂O′ chain).     

氧含量对CaCu3Ti4O12巨介电常数和介电过程的影响

本文研究了在真空、空气和氧气中烧结制备的三种 CaCu₃Ti₄O₁₂陶瓷材料的介电特性. 交流阻抗测量结果表明在10—300 K温度范围, 三种样品的介电温谱中均出现三个平台, 其电阻实部和电容虚部在相应温度出现损耗峰, 真空条件烧结的样品具有较高的介电平台和较明显的电阻实部与电容虚部峰值, 表明氧含量和氧空位对CaCu₃Ti₄O₁₂的介电性质具有重要影响, 介电温谱出现的三个平台分别源于晶粒、晶界及氧空位陷阱.温谱分析表明晶粒的激活能与烧结气氛有较大关系,氧空位引起的电子短程跳跃及跳跃产生的极化子是晶粒电导和电容的主要起源.氧空位陷阱的激活能基本与烧结气氛无关,约为0.46 eV. 氧空位对载流子的陷阱作用是CaCu₃Ti₄O₁₂ 低频高介电常数的重要起源.     

Effects of O2/Ar ratio and annealing temperature on electrical properties of Ta2O5 film prepared by magnetron sputtering

The effects of the oxygen-argon ratio on electric properties of Ta2O5 film prepared by radio-frequency magnetron sputtering were investigated.The Ta2O5 partially transforms from the amorphous phase into the crystal phase when annealing temperatures are 800℃ or higher.The lattice constant of Ta2O5 decreases with the increase of the O2/Ar ratio,which indicates that oxygen gas in the working gas mixture contributes to reducing the density of oxygen vacancies during the deposition process.For the films deposited in working gas mixtures with different O2/Ar ratios and subsequently annealed at 700℃,the effective dielectric constant is increased from 14.7 to 18.4 with the increase of the O2/Ar ratio from 0 to 1.Considering the presence of an SiO2 layer between the film and the silicon substrate,the optimal dielectric constant of Ta2O5 film was estimated to be 31.Oxygen gas in the working gas mixture contributes to reducing the density of oxygen vacancies,and the oxygen vacancy density and leakage current of Ta2O5 film both decrease with the increase of the O2/Ar ratio.The leakage current decreases after annealing treatment and it is minimized at 700℃.However,when the annealing temperature is 800℃ or higher,it increases slightly,which results from the partially crystallized Ta2O5 layer containing defects such as grain boundaries and vacancies.     

Effect of KNbO<Subscript>3</Subscript> modification on structural,electrical and magnetic properties of BiFeO<Subscript>3</Subscript>

The polycrystalline samples of (Bi_1?x K _x ) (Fe_1?x Nb _x ) O₃ (BKFN) for x = 0.0, 0.1, 0.2 and 0.3 were synthesized by a solid-state reaction method. The X-ray diffraction patterns of BKFN exhibit that the addition of KNbO₃ in BiFeO₃ gradually changes its structure from rhombohedral to pseudocubic. The analysis of scanning electron micrograph clearly showed that the sintered samples have well-defined and uniformly distributed grains. Addition of KNbO₃ to BiFeO₃ enhances the dielectric, ferroelectric and ferromagnetic properties of BiFeO₃. Detailed studies of impedance and related parameters of BKFN using the complex impedance spectroscopic technique exhibit the significant contributions of grain and grain boundaries in the resistive and transport properties of the materials. Some oxygen vacancies created in the ceramic samples during high-temperature processing play an important role in the conduction mechanism. The leakage current or tangent loss of BiFeO₃ is greatly reduced on addition of KNbO₃ to the parent compound BiFeO₃. Preliminary studies of ferroelectric and magnetic characteristics of the samples reveal the existence of ferroelectric, and weak ferromagnetic ordered ceramics.     

高氧空位简并锐钛矿TiO2半导体电子寿命的第一性原理研究

为了研究锐钛矿TiO₂晶体中高氧空位浓度对电子寿命的影响,利用基于局域密度泛函理论框架下的广义梯度近似平面波超软赝势方法, 用第一性原理对含高氧空位浓度的锐钛矿TiO₂晶体进行了结构优化处理、能带分布和态密度分布计算, 表明在温度一定和高氧空位浓度的条件下, 锐钛矿TiO₂的电子寿命随氧空位浓度的增大而减小;电子浓度的大小对电子寿命无影响.同时,锐钛矿TiO₂晶体中高氧空位浓度时,发现有莫特相变的现象. 关键词： 高氧空位 2半导体')" href="#">锐钛矿TiO₂半导体 电子寿命 第一性原理     

Preparation of Nd-doped BiFeO3 films and their electrical properties

The Nd-doped BiFeO₃ thin films were prepared on SnO₂(FTO) substrates spin-coated by the sol–gel method using Nd(NO₃)₃·6H₂O, Fe(NO₃)₃·9H₂O and Bi(NO₃)₃·5H₂O as raw materials. The microstructure and electric properties of the BiFeO₃ thin films were characterized and tested. The results indicate that the diffraction peak of the Nd-doped BiFeO₃ films is shifted towards right as the doping amounts are increased. The structure is transformed from the rhombohedral to pseudotetragonal phase. The crystal grain is changed from an elliptical to irregular polyhedron. Structure transition occurring in the Bi_0.85Nd_0.15FeO₃ films gives rise to the largest Pr of 64 μC/cm². The leakage conductance of the Nd doped thin films is reduced. The dielectric constant and dielectric loss of Bi_0.85Nd_0.15FeO₃ thin film at 10 kHz are 190 and 0.017 respectively.     

The coexistence of ferroelectricity and ferromagnetism in Mn-doped BaTiO3 thin films

Due to the fault of the first author, this article entitled “The coexistence of ferroelectricity and ferromagnetism in Mn-doped BaTiO3 thin films”, published in “Chinese Physics B”, 2011,Vol.20, Issue 12, Article No. 127701, has been found to copy from the article entitled“Decisive role of oxygen vacancy in ferroelectric versus ferromagnetic Mn-doped BaTiO3 thin films”, published in “Journal of Applied Physics”, 2011,Vol.109, Issue 8, article No. 084105. So the above article in “Chinese Physics B” has been withdrawn from the publication.<     

Atomic and electronic structures of Mg-doped perfect SrTiO3 and crystals containing oxygen vacancies from first principles

The electronic properties of Mg-doped perfect SrTiO₃ and crystals containing oxygen vacancies systems are investigated by first principles calculation. Dopant formation energy results show that the Mg atoms preferentially enter the Sr site in SrTiO₃. Substitution of Ti by Mg brings some acceptor levels, which introduces the p-type conductivity of SrTiO₃. Creation of oxygen vacancies in SrTiO₃ introduces donor levels, which can contribute to the n-type conductivity. In SrTiO₃ containing oxygen vacancies system, a self-compensation effect will occur when Ti is substituted by Mg, and the system undergoes n-type to p-type transition.     

脱氧La0.5Ca0.5MnO3样品的铁磁-反铁磁转变和电阻率变化

研究了氧空位对La_0.5Ca_0.5MnO₃ （LCMO）多晶块材的电输运和磁性质的影响. 随着氧空位的增加, 样品在高温段的电阻率一直增加, 并满足绝热小极化子模型, 而低温段的电阻率先下降后上升, 并出现明显的dR/dT>0的行为, 直至最后变为绝缘的. 氧空位的增加抑止了反铁磁相的出现, 使得脱氧的LCMO样品不发生反铁磁转变, 进一步增加氧空位则会抑制铁磁相. 关键词： 0.5Ca_0.5MnO₃')" href="#">La_0.5Ca_0.5MnO₃ 反铁磁相变 铁磁相变 脱氧     

Ab initio study on phase transition and magnetism of BiFeO3 under pressure

In this paper the first-principles calculations within local spin density approximation (LSDA)+U show that BiFeO3 experiences a mixed phase state with P4mm structure being the intermediate phase before the pressure of phase transition is reached. The critical pressure for the insulator-metal transition (IMT) is found to be about 50 GPa. A pressure induced crossover of high-spin states and low-spin states is observed close to the IMT pressure in R3c structure. The LSDA+U calculations account well for the mechanism of the IMT and crossover of spin states predicted in recent experiment (Ref.[1]).     

Antiresonant dielectric spectra: Theory and experiment

It is established that, in ceramics based on solid solutions of BiFeO₃–SrTiO₃ and BiFeO₃–BaTiO₃ multiferroics, antiresonant dielectric spectra—a kind of spectra not described in literature—are possible in addition to relaxation and resonant spectra. Antiresonant dielectric spectra are simulated, and experimental data confirming the simulation results are obtained. It is shown that the antiresonant spectra are characterized by a large activation energy (U > 1 eV). A relationship between the antiresonant spectra and hopping conductivity is supposed.     

Electrical behavior of high resistivity Ce-doped BiFeO3 multiferroic

Bi_1+xCe_xFeO₃ (Ce–BFO) for x=0, 0.05, 0.1, and 0.15 monophasic ceramic samples were successfully synthesized by conventional solid-state reaction routes. The influences of Ce doping on structural, dielectric, ferroelectric, leakage current and capacitive properties of BiFeO₃ ceramics were investigated intensively. At higher concentrations of x (x=0.1 and 0.15) the samples showed good crystallinity with almost impurity free phases. No structural phase transformation took place after partial doping of Ce ions and all ceramic bulk samples remain in their rhombohedral structure with space group R3c. The dielectric behavior of the samples improved significantly and the ferroelectric hysteresis loops changed their shape from rounded to a strongly nonlinear typical ferroelectric feature mainly originating from the domain switching and became enhanced with increase in doping concentration of cerium (Ce). Experimental results also suggested that partial doping of higher valence, smaller ionic radius Ce ions in BiFeO₃ forces the reduction of oxygen vacancies, resulting in a great suppression of leakage current. It is found that the sharp capacitance peak/discontinuity present in the C–V characteristics of Ce–BFO for different Ce doping concentrations is directly associated with the polarization reversal. Incorporation of excess bismuth in the presence of Ce in BiFeO₃ is expected to compensate Bi loss during high temperature sintering and caused structural distortion which also favors enhancement of ferroelectric properties in Ce-doped BFO.     

First-principles study of native defects in rutile TiO2

Native point defects in the rutile TiO₂ are studied via first-principles pseudopotential calculations. Except for the two antisite defects, all the native point defects have low formation energies. Under the Ti-rich growth condition, high concentrations of titanium interstitials and oxygen vacancies would form spontaneously in p-type samples; whereas high concentrations of titanium vacancies would form spontaneously in n-type samples regardless of the oxygen partial pressure.     

Doping strategies for increased performance in BiFeO3

Investigation of crystal structure, dielectric, magnetic and local ferroelectric properties of the diamagnetically substituted Bi_1−xA_xFeO_3−x/2 (A=Ca, Sr, Pb, Ba; x=0.2, 0.3) polycrystalline samples has been carried out. It has been shown that the heterovalent A²⁺ substitution result in the formation of oxygen vacancies in the host lattice. The solid solutions have been found to possess a rhombohedrally distorted perovskite structure described by the space group R3c. Piezoresponse force microscopy has revealed signs of existence of the ferroelectric polarization in the samples at room temperature. Magnetization measurements have shown that the magnetic state of these compounds is determined by the ionic radius of the substituting elements. A-site substitution with the biggest ionic radius ions has been found to suppress the spiral spin structure of BiFeO₃ giving rise to the appearance of room-temperature weak ferromagnetism.