Electronic structure of the Ge/RbF/GaAs(100) heterostructure: LCAO calculations

The electronic structure of Ge/RbF/GaAs(100) system has been calculated using a slab model and the LCAO method. This system, with possible applications in microelectronics, is a model one with perfectly epitaxial interfaces, little is known however about their reactivity. In these calculations the reactive contacts were postulated and modelled. The obtained results, compared with those of trial calculations for similar non-interacting system, show the appearance of a rich spectrum of interface states at the contacts. They are compared with known experimental results and their possible effects are discussed.     

Double-step excitation in spin polarized photoemission from NEA GaAs(100)

Spin polarized photoelectrons emitted from a NEA GaAs(100)-photocathode, which is activated in a special way with oxygen and cesium, can have a broad energy distribution with a maximum energy higher than expected for an one-photon excitation process within the bulk from the valence band edge into the conduction band. Also the shape of the energy distribution curves of the emitted electrons depends on the intensity of the incident light. This double-step excitation process is observed for aged and/or oxidized activation layers, especially for surfaces with a strongly developed, negative electron affinity. To give an explanation of these effects, it is suggested that excited conduction electrons absorb a further photon within the band bending region. This second photoemission excitation step seems to be enhanced by an interfacial barrier between the band bending region and the cesium-oxygen activation layer as well as by the existence of two-dimensional surface subbands.     

Time-resolved two-photon photoemission of buried interface states in Ar/Cu(100)

We demonstrate the existence of buried image-potential states at the interface between thick Ar films and a Cu(100) substrate. The electron dynamics of these solid-solid interface states, energetically located above the vacuum level in the band gaps of both materials, could be investigated with time-resolved two-photon photoemission for an Ar layer thickness up to 200 A. Relaxation on time scales between 40 and 200 fs occurs via two distinct channels, resonant tunneling through the insulating layer into the vacuum and electron-hole pair decay in the metal.     

Low-energy electron energy-loss spectroscopy with Ge:GaAs (110) heterostructures

Electronic properties and chemical composition of Ge films grown by molecular beam epitaxy on GaAs (110) surfaces were studied in situ by electron energy-loss spectroscopy. The loss peaks involving core-level excitations proved that As atoms segregate at the surface of the growing film. The well known 20 eV loss peak of the clean GaAs (110) surface, being attributed to transitions from Ga(3d) to Frenkel-type excitons of dangling-bond surface states, was found to persist, slightly shifted to 19.7 eV, with the growing Ge (110) film. Since the Ga coverage amounts to below approximately 0.05 of a monolayer this transition seems to contain a strong intraatom contribution.     

Photoelectron spectroscopy of Ar/Cu(100) interface states

Buried interface states in Ar/Cu(100) were studied by means of one- and two-photon photoemission experiments. With increasing Ar overlayer thickness, a transition from broad electron scattering resonances in the Ar conduction band into a hydrogen-like series of quasi-bound states at the Ar/Cu interface was observed. The thickness dependence of energies and lifetimes is compared to theoretical resonance positions and linewidths derived from a parameterized one-dimensional potential. PACS 73.20.-r; 73.40.Ns; 79.60.-i; 78.47.+p     

Strained germanium films in Ge/InGaAs/GaAs heterostructures: Formation of edge misfit dislocations at the Ge/InGaAs interface

Heterostructures of the “strained Ge film/artificial InGaAs layer/GaAs substrate” type have been grown by molecular beam epitaxy. A specific feature of these structures is that the plastically relaxed (buffer) InGaAs layer has the density of threading dislocations on a level of 10⁵–10⁶ cm⁻². These dislocations penetrate into the strained Ge layer to become sources of both 60° and 90° (edge) misfit dislocations (MDs). Using the transmission electron microscopy, both MD types have been found at the Ge/InGaAs interface. It has been shown that the presence of threading dislocations inherited from the buffer layer in a tensile-strained Ge film favors the formation of edge dislocations at the Ge/InGaAs interface even in the case of small elastic deformations in the strained film. Possible mechanisms of the formation of edge MDs have been considered, including (i) accidental collision of complementary parallel 60° MDs propagating in the mirror-tilted {111} planes, (ii) induced nucleation of a second 60° MD and its interaction with the primary 60° MD, and (iii) interaction of two complementary MDs after a cross-slip of one of them. Calculations have demonstrated that a critical layer thickness (h _c ) for the appearance of edge MDs is considerably smaller than h _c for 60° MDs.     

Angle-resolved polarization-dependent photoemission from Cu(100) and Cu(111): experiment and theory

Experimental angle-resolved photoemission spectra from Cu(111) and Cu(001) excited by linearly polarized light (21.2 eV) are compared with intensity results calculated by the “one step model” theory. Good overall agreement is obtained both for s- and p-polarized light assuming a classical macroscopic radiation field inside the crystal.     

100 keV质子辐照对空间GaAs/Ge太阳电池光电效应的影响

利用空间环境模拟设备,用固定能量为100keV、注量为1×10⁹—3×10¹²cm^-2的质子,对空间实用GaAs/Ge太阳电池进行了辐照试验.利用伏安(I-V)特性、光谱响应和光致发光(PL)光谱测试,研究分析了电池的光电效应.试验表明,电池的各种电性能参数如短路电流(I_sc)、开路电压(V_oc)、最大输出功率(P_{m< 关键词： GaAs/Ge太阳电池 质子辐照 光电效应}     

利用飞秒双光子光电子发射研究GaAs(100)的自旋动力学过程

超短激光技术的发展为研究材料中的超快光动方学过程提供了重要的实验手段，也使得人们 能够更为深入地研究电子的自旋动力学行为.GaAs(100)表面由于费米钉扎而会导致能带弯曲 ，位于该区域的电子及其自旋特性将会明显不同于体相材料中的情况.利用时间分辨和自旋 分辨的双光子光电子发射技术研究了p型掺杂GaAs(100)表面的电子极化动力学过程.结果表 明，由费米钉扎而引起的能带弯曲明显影响电子的自旋弛豫过程，从实验上观察到了GaAs(1 00)表面能带弯曲区域的电子自旋翻转时间存在近2个量级的差异(从几纳秒到几十皮秒)，基 于电子-自旋交换相互作用的BAP机理在自旋弛豫过程中起着主导作用. 关键词： 光物理 自旋极化 双光子光电子发射 砷化镓     

Tracking the excitation dynamics in the Mn:Ge(111) metallic interface by resonant electron spectroscopy

Resonant photoemission from the valence band of a (√3 × √3)R30° reconstructed Mn:Ge(111) metallic interface has been carefully analyzed with the aim to track the transition from resonant Raman to normal Auger emission. The transition energy has been compared with the Mn 2p binding energy, as well as with the Mn L(3) absorption edge energy. Close similarities emerge with respect to the case of elemental Mn thin films, suggesting that the excitation dynamics is dominated by the electronic properties of Mn 3d states, in spite of the bonding with Ge atoms. The switching from the resonant Raman Auger (RRAS) to the normal Auger regime is found about 2 eV below the Mn L(3) absorption edge. A change of the lineshape due to the transition from an overall N - 1 electron final state (RRAS channel) to an N - 2 electron final state (normal Auger channel) is evidenced by the analysis of the experimental data, which also allowed the ratio to be tracked between charge delocalization and core-hole time scales as the photon energy is tuned across the Mn L(3) edge.     

Valence band photoemission from in-situ grown GaAs(100)-c(4 × 4)

The electron structure of GaAs(100)-c(4 × 4) has been studied by means of angular-resolved photoelectron spectroscopy for photon energies (20–40) eV. The sample was prepared by molecular beam epitaxy in-situ at the BL41 beamline of the MAX I storage ring of the Max-lab in Lund. Photon energy variation helped in separating dispersing bulk features from nondispersing surface features in the energy distribution curves recorded at normal emission. Two sets of peaks were related to bulk transitions from the two topmost E(k _⊥) branches of the valence band of GaAs and one more set came from the surface state in the center of the 2D Brillouin zone. Good agreement was found between experimental bulk dispersion branches and theoretical calculations based on realistic final state dispersion. The surface state peak, hardly visible at 20 and 22 eV photon excitations, gets clearly enhanced at higher excitation energies. In contrast to earlier measurements of this kind, two major differences have been found: (i) clearly developed surface state peak just below the top of the v alence band, (ii) absence of a large peak in the electron energy distribution at around −6.5eV below the valence band top. Presented at the X-th Symposium on Suface Physics, Prague, Czech Republic, July 11–15, 2005.     

The photon angle dependence of photoemission from a Cu(100) crystal

The symmetry properties of direct interband transitions are shown to have important consequences for angle-resolved u.v. photoemission. Predictions are made regarding the photon incidence angle dependence of Ar I (11.7 eV) excited photoemission from a Cu(100) single crystal surface, and these are shown to be in close agreement with the experimental results.     

Bulk,surface and thermal effects in inverse photoemission spectra from Cu(100), Cu(110) and Cu(111)

We have performed a study of empty electronic bulk and surface states on the three low indexed copper surfaces employing momentum resolved inverse photoemission. The bulk electronic features may be well understood in the frame work of the bulk direct transition model using state of the art band structure calculations. Surface states of both, the crystal derived and the image potential induced type have been identified and were found to agree with previous work. Several radiative transitions into unoccupied bands were also investigated at elevated temperatures. Characteristic temperatures of an exponential attenuation law are distinctly different between surface and bulk transitions. However, no systematic behaviour of bulk transitions at different points of the Brillouin zone could be established.     

Inverse photoemission spectroscopy of the unoccupied electronic structure of Na/Cu(110)

The unoccupied electronic states of Na thin films on a Cu(110) substrate have been measured by inverse photoemission spectroscopy (IPES). The IPES spectrum provides the intensity of the unoccupied states, which decreases with increasing Na coverage at off-normal incidence of the electron beam. The IPES spectra at 17 and 19 eV incident electron energies show a shift towards the Fermi level with increasing Na coverage for the peak at ∼7.8 eV.     

Photoinduced interface charging in multiphoton photoemission from ultrathin Ag films on Si(100)

The fluence dependence of two-photon photoemission and time resolved two-color pump–probe photoemission spectroscopy of a 25 ML thick Ag-film grown on n-doped Si(100) reveal a photoinduced work function reduction that is attributed to a reduction of the surface dipole. Time-resolved two-color pump–probe spectroscopy shows that this reduction persists for at least several microseconds. This and the pump-induced modification of the 4.65 eV two-photon photoemission spectrum indicate that the excitation of long-lived trap states at the Ag-Si interface affects the charge distribution in the Ag film and consequently is responsible for the reduction of the surface dipole. PACS 79.60.Bm; 79.60.-i; 82.50.Nd, 73.50.-h