Atomic-scale surface science phenomena studied by scanning tunneling microscopy

Following the development of the scanning tunneling microscope (STM), the technique has become a very powerful and important tool for the field of surface science, since it provides direct real-space imaging of single atoms, molecules and adsorbate structures on surfaces. From a fundamental perspective, the STM has changed many basic conceptions about surfaces, and paved the way for a markedly better understanding of atomic-scale phenomena on surfaces, in particular in elucidating the importance of local bonding geometries, defects and resolving non-periodic structures and complex co-existing phases. The so-called “surface science approach”, where a complex system is reduced to its basic components and studied under well-controlled conditions, has been used successfully in combination with STM to study various fundamental phenomena relevant to the properties of surfaces in technological applications such as heterogeneous catalysis, tribology, sensors or medical implants. In this tribute edition to Gerhard Ertl, we highlight a few examples from the STM group at the University of Aarhus, where STM studies have revealed the unique role of surface defects for the stability and dispersion of Au nanoclusters on TiO₂, the nature of the catalytically active edge sites on MoS₂ nanoclusters and the catalytic properties of Au/Ni or Ag/Ni surfaces. Finally, we briefly review how reaction between complex organic molecules can be used to device new methods for self-organisation of molecular surface structures joined by comparatively strong covalent bonds.     

Real-time STM observation of molecular dynamics on a metal surface

Dynamic processes of molecular assembly on a metal surface were examined using scanning tunneling microscopy (STM). Molecules of a porphyrin derivative were deposited on a Cu(1 1 1) surface and were found to be highly mobile at room temperature. The real-time STM observation enabled visualization of molecular activity such as surface diffusion, domain formation and phase transition. The high mobility of the molecules caused build-up and break-down of molecular domains. Metastability of the molecular assembly caused various domain formations with different molecular alignments, including square and hexagonal motifs. A phase transition from a hexagonal to a square domain structure was successfully observed by sequential STM imaging.     

Time-dependent tunneling spectroscopy for studying surface diffusion confined in nanostructures

By confining a diffusion atom in a nanometer region using surface potential heterogeneity, we have successfully employed a time-dependent tunneling spectroscopy to quantitatively study its random motion. A hopping rate in the range of 1-10(4) Hz, approximately 3 orders of magnitude faster than those accessible by the existing diffusion methods based on scanning tunneling microscopy, was demonstrated for single Cu atoms diffusing in the faulted half unit cell of Si(111)-(7 x 7). Our technique is potentially useful to detect fast diffusion processes such as H quantum diffusion at atomic scale.     

Atomic diffusion inside a STM junction: simulations by kinetic Monte Carlo coupled to tunneling current calculations

The influence of a static scanning tunneling microscope (STM) tip on the diffusion of xenon atoms adsorbed on a Cu(1 1 0) stepped surface is studied. Semi-empirical potentials for the Xe-surface interaction and a N-body energy based method for the Xe-tip contribution are used to calculate the adsorption energy of adsorbates in the STM junction. First, we analyse the variation of this energy when the adatom is placed near a step edge and for different tip positions. When the tip is situated in the neighbourhood of the step edge, the Ehrlich-Schwoebel barrier experienced by the adatom is lowered. This opens a specific diffusion channel, allowing a possible crossing of the step edge. Second, through a kinetic Monte Carlo approach coupled to the elastic scattering quantum chemistry method, the noisy tunneling current created by the random motion of diffusing atoms in the vicinity of the tip can be analyzed. We show that, by counting the number of diffusion events, we can determine effective barriers related to the most dominant processes contributing to the diffusion at a particular temperature. We also demonstrate that the interaction mode of the tip (attractive or imaging) greatly modifies the diffusion processes.     

Study of CO diffusion on stepped Pt(1 1 1) surface by scanning tunneling microscopy

We have used a time-dependent tunneling current mode based on scanning tunneling microscopy/spectroscopy (STM/STS) to study the tracer diffusion of CO molecules along steps and on terraces of Pt(1 1 1). The results show that the hopping rate of CO molecules along steps is about 10 times faster than that on terraces in the measured temperature range. The diffusion activation energies are 5.1 kcal/mol and 3.8 kcal/mol on terraces and along steps, respectively. The lower activation energy and faster hopping rate for CO molecules diffusing along steps provide evidence that steps provide fast diffusion channels for CO molecules on stepped Pt(1 1 1) surfaces.     

Structural change of radiation defects in graphite crystals induced by STM probing

It was found that STM (scanning tunneling microscopy) images of defects in highly oriented pyrolytic graphite introduced by bombardment of 400 eV Ar⁺ ions in ultra-high vacuum exhibit substantial changes in the course of STM probing. Detailed examination of abrupt changes in the tunneling current measured at defect sites during voltage scans shows that the primary cause of the defect-image change was found to be neither the injected current nor the injected power but the absolute value of the voltage applied between the probe tip and the sample. We propose that an electric polarization induced force attracting the sample surface toward the probe tip widens the layer spacing of the graphite surface, leading to an acceleration of the lateral diffusion of interstitial atoms introduced by the ion irradiation, which results in a change in the defect structures and the accompanying electronic structures sensible in the STMimaging. Received: 14 June 2001 / Accepted: 7 September 2001 / Published online: 20 December 2001     

利用STM和CV方法测定有机发光材料的能带参数

利用扫描隧道显微镜/扫描隧道谱(STM/STS)的技术,研究了有机发光材料Alq₃、DPN-2CN和DNP-2CN的表面电子结构。将材料DPN-2CN和DNP-2CN的表面电子结构与Alq₃的表面电子结构进行对比,判定了DPN-2CN和DNP-2CN的最低空轨道(LUMO)能级。通过电化学循环伏安(CV)法,对DPN-2CN和DNP-2CN的LUMO能级和最高占有轨道(HOMO)能级进行了表征。两种测试方法所得到的LUMO能级参数基本一致。     

Bistability of single 1,5 cyclooctadiene molecules on Si(001)

The adsorption and current-induced bistability of single 1,5 cyclooctadiene molecules on Si(001) were studied in ultrahigh vacuum by low-temperature scanning tunneling microscopy (STM). After a dosage of ≈0.05 L at room temperature followed by cooling to the measuring temperature of 7 K, we find that the cyclic alkene molecule preferably adsorbs in the bridge structure with both C=C double bonds reacting with two adjacent Si dimers via [2+2] cycloaddition reaction. The time-dependent current measured upon tunneling through the adsorbed molecule at fixed STM tip height displays a switching between two current levels with the same mean residence time in each level. Higher bias and/or reduced tip height—and therefore higher current—increase the switching rate, suggesting that the reversible switching is due to inelastic electron tunneling. The observed bistability is interpreted as a dynamic interconversion between two degenerate conformations of the adsorbed molecule.     

铁氧化物中电子隧道现象的扫描隧道显微术研究

报道了利用扫描隧道显微术(STM)对金属表面氧化物层进行电子隧道谱研究的结果。在对两类铁晶体表面氧化层进行的隧道谱和势垒高度测量结果进行分析后表明,常温条件下形成的氧化层(Ⅰ类)应主要是Fe₃O₄;而在高温氧化条件下形成的表面层(Ⅱ类)的主要成分则应是Fe₂O₃。从而表明(STM)可用于研究铁表面氧化过程的不同阶段,并且由Ⅰ类氧化层的低势垒特性说明STM还可以用于观测此类氧化层的内部结构。类似研究方法还可应用到对一系列 关键词：     

STM simulation of molecules on ultrathin insulating overlayers using tight-binding: Au-pentacene on NaCl bilayer on Cu

We present fast and efficient tight-binding (TB) methods for simulating scanning tunneling microscopy (STM) imaging of adsorbate molecules on ultrathin insulating films. Due to the electronic decoupling of the molecule from the metal surface caused by the presence of the insulating overlayer, STM can be used to image the frontier molecular orbitals of the adsorbate. These images can be simulated with a very efficient scheme based on hopping integrals which also enables the analysis of phase shifts in the STM current. Au-pentacene complex adsorbed on a NaCl bilayer on Cu substrate provides an intricate model system which has been previously studied both experimentally and theoretically. Our calculations indicate that the complicated shape of the molecular orbitals may cause multivalued constant current surfaces - leading to ambiguity of the STM image. The results obtained using the TB methods are found to be consistent with both DFT calculations and experimental data.     

Measurement of gold surface self-diffusion by scanning tunneling microscopy

Measurement of gold surface self-diffusion by the method of surface profile decay, using a scanning tunneling microscope (STM) have been done on a polycrystalline gold film deposited on a glass substrate. The peak-to-peak surface roughness was measured as a function of annealing time after annealing at 170 °C with a special pan-cake furnace in the STM. The gold surface diffusion coefficient at 170 °C can then be extracted from these measurements.     

扫描隧道显微镜针尖调制的薄膜表面的原子扩散

采用原子尺度的模拟方法,探讨了在零偏压下扫描隧道显微镜(STM)针尖调制的金属表面岛上原子运动及岛边的层间质量输运. 研究结果显示STM的移动对岛上及岛边的原子扩散有重要的影响. 针尖与吸附原子的交互作用及岛和基体中强的形状变化影响了岛上吸附原子的跳跃扩散及岛边的跳下扩散和交换扩散过程. 研究发现,通过调节针尖与基体的垂直距离及针尖与吸附原子的水平距离,可以降低岛上吸附原子的跳跃扩散能垒及岛边的跳下扩散和交换扩散能垒,从而实现薄膜由三维生长模式向二维生长模式的转变. 关键词： 扫描隧道显微镜 原子运动 质量输运     

Continuous-time observation of pseudo-vacancy diffusion at Si(111)-7 × 7 surfaces

Scanning tunneling microscopy (STM) is used to study surface diffusion of a special type of point defects at Si(111)-7 × 7 surfaces. These defects survive even after annealing up to 1250°C. They appear darker than Si adatoms at the tunneling biases ranging from −3 to +3 V, but they are not true vacancies. We found that these vacancy-like defects (hereafter, we refer to them as pseudo-vacancies) are not caused by adsorption of major contaminants in the vacuum chamber, nor by dopants. We also observed migration of pseudo-vacancies between nearest neighboring Si adatom sites at temperatures above 500°C. Most of the jumps are within a half of the 7 × 7 unit cell. Thousands of STM images were recorded from 520 to 610°C and the activation energies and frequency factors were determined. Varying the tunneling current produces almost no effect on the diffusion, but varying the scanning speed produces a small effect.     

Stochastic switching of subphthalocyanine arrays triggered by scanning tunneling microscopy

Single-molecular switching phenomena in monolayer arrays of subphthalocyanine adsorbed on Cu(1 0 0) surface were investigated by scanning tunneling microscopy (STM) under ultrahigh vacuum. The molecules evaporated on the surface arranged in a square lattice taking the Cu(1 0 0)SubPc(5 × 5) epitaxy. During continuous STM imaging at fixed tunneling conditions the topography of the individual molecules spontaneously changed between the high and low states. This topographic change was attributed to orientational switching between the upward and downward adsorption of the axial Cl atom of the molecule on the Cu surface. Molecular energy calculations and statistical thermodynamic evaluation concluded that the tip-triggered disturbance in the close-packed molecular array induced the molecular rearrangement accompanied with the stochastic orientational switching.     

Nonlocal dissociative chemistry of adsorbed molecules induced by localized electron injection into metal surfaces

We present a novel approach to surface chemistry studies using scanning tunneling microscopy (STM), where dissociation of molecules adsorbed on metal surfaces is induced nonlocally in a 10-100 nm radius around the STM tip by hot electrons that originate from the STM tip and transport on the surface. Nonlocal molecular excitation eliminates the influence of the STM tip on the outcome of the electron-induced chemical reaction. The spatial attenuation of the nonlocal reaction is used as a direct measure of hot-electron transport on the surface.     

First-principles theory of scanning tunneling microscopy

Scanning tunneling microscopy/spectroscopy (STM/STS), which has been so epoch-making in surface science experiments introduced many challenging problems also to the theory of condensed matter physics. Recent progress in theories of STM/STS contributed to revealing the relation between the atomic structure of the tip and the STM/STS data, and to clarify various strange phenomena observed. The present article reviews various important issues of the fundamentals of STM/STS from theoretical view points.

After surveying the so far presented theoretical approaches, the first-principles simulation method based on the microscopic electronic state of both the sample surface and the tip is introduced. Several examples of the simulation such as graphite and Si surfaces, are described. Some novel phenomena of the microscopic tunnel system of STM such as the negative differential resistance in STS and single electron tunneling through fine supported particles are also discussed, as well as the many-body effect or electron-phonon coupling effect on STM/STS.     

Optical pump-probe scanning tunneling microscopy for probing ultrafast dynamics on the nanoscale

The development of a method for exploring the ultrafast transient dynamics in small organized structures with high spatial resolution is expected to be a basis for further advances in current science and technology. Recently, we have developed a new microscopy technique by combining scanning tunneling microscopy (STM) with ultrashort-pulse laser technology, which enables the visualization of ultrafast carrier dynamics even on the single-atomic level. A nonequilibrium carrier distribution is generated using ultrashort laser pulses and its relaxation processes are probed by STM using the optical pump-probe method realized in STM by the pulse-picking technique. In this paper, the fundamentals of the new microscopy technique are overviewed.     

The effect of the surface enhanced polariton field on the tunneling current of a STM

The influence of surface polaritons (SPs), excited on the external (fast mode) and internal (slow mode) surfaces of a gold film, on the tunneling current of a STM is investigated. The role of the surface polaritons is directly demonstrated by the angular excitation spectra of the induced tunneling current. Possible mechanisms which might give rise to the SP induced change in the tunneling current are discussed. An electromagnetic field of SPs within a tunneling gap is estimated to be surface enhanced in order to explain the value of the induced tunneling current. Images of the polariton induced signal distribution over the sample surface taken by means of different SP modes are compared in order to obtain information on the structure of the internal surface of the film.     

FOURIER ANALYSIS OF TEMPORAL AND SPATIAL OSCILLATIONS OF TUNNELING CURRENT IN SCANNING TUNNELING MICROSCOPY

Partially oxidized Si(111) surfaces and surfaces of highly oriented pyrolytic graphite (HOPG) were studied by two different ultrahigh vacuum scanning tunneling microscope (UHV-STM) systems and by an STM system working under ambient conditions, respectively. The STM current images of partially oxidized Si(111) surfaces and HOPG surfaces were analyzed by one/two-dimensional fast Fourier transformation (1D-FFT/2D-FFT). The phenomenon of temporal oscillations of tunneling current on the partially oxidized Si(111) surfaces was detected with both UHV-STM systems. Temporal as well as spatial oscillations of tunneling current appeared in highly resolved STM current images of the Si(111) surfaces simultaneously, but both kinds of oscillations could be discriminated according to their different influence on the 2D-FFT spectra of the current images, while varying the scanning range and rate. On clean HOPG surfaces only spatial oscillations of tunneling current induced by the surface structure were observed.     

Tunneling current oscillations excited by DC voltage

Investigating a polycrystalline gold layer on glass by a scanning tunneling microscope in air, tunneling current oscillations were found, which are excited by the DC voltage across the gap. The oscillation amplitude is dependent on the place on the surface of the sample and correlates with its topography. The frequency spectra of these oscillations are influenced by resonances of the mechanical system (z-piezo/sample holder/transducer/sample). A piezoelectric transducer is able to detect alternating forces originating from the tunnel junction. The resonances in the spectrum of the AC tunneling current and the mechanical resonances of the STM system seem to be related. Trapping and subsequent delayed desorption of charge carriers at localized surface states could play a role in generating the observed time-dependent forces across the gap and thereby creating tunneling current oscillations.