高性能石墨烯/金字塔硅异质结近红外光探测器

石墨烯具有优异的光学性质和电学性质,在快速宽光谱光电探测方面有极大的潜力。本文设计并制备一种高性能石墨烯/n型金字塔硅异质结近红外光探测器。高质量石墨烯是采用化学气相沉积法制备的,通过湿法转移将其转移到n型金字塔硅表面,从而获得具有垂直结构的石墨烯/金字塔硅异质结器件。测试结果表明,在无光照条件下,器件的整流比达到了6.9×10⁵;在970 nm近红外光的照射下,电流开关比高达5.3×10⁴,电流响应度、外量子效率、光电压响应度和比探测率分别可达577.6 mA·W^-1、73.97%、1.26×10⁶V·W^-1和4.92×10¹²Jones。此外,器件具有快的响应速度,上升和下降时间分别为22μs和14.5μs。最后,还对器件稳定性进行研究,在空气环境中放置3个月后,光电流基本没有衰减,表明了器件具有优异的空气稳定性。     

高性能石墨烯/硅纳米线阵列异质结光探测器

设计了基于石墨烯/硅纳米线阵列异质结的高灵敏度自驱动光探测器。该探测器中的纳米线阵列为直径约为100 nm的周期性结构,表面纳米结构的光捕获效应可以有效地抑制入射光的反射,增加了有效光照面积,增强了异质结的吸收,从而提高了器件的光电检测性能。实验制备出的异质结在±3 V偏压下表现出明显的电流整流特性,整流比为6.93×10⁵。此外,由于纳米线阵列的光捕获效应增强了探测器在紫外到近红外的吸收,所以该探测器的探测范围可以从紫外到近红外光。在入射波长810 nm、光强为90μW/cm²的光照下,光探测器的光电流响应度可以达到0.56 A·W^-1,光电压响应度达1.24×10⁶ V·W^-1,探测率为1.18×10¹² Jones。更重要的是,该器件具有30/32μs的快速升/降响应速度。     

石墨烯/硅异质结光电导型探测器光电响应及噪声

设计并制备了石墨烯/硅异质结光电导型光电探测器,重点分析了光电响应与噪声性能。相比纯硅光电导探测器,石墨烯/硅异质结光电导探测器对635 nm波长激光的净光电流从20μA提升至260μA,与此同时,其1 Hz噪声幅值从3.2×10^-17 A²/Hz增加至2.1×10^-16 A²/Hz。进一步比较两种探测器的相对信噪比(净光电流/1 Hz噪声幅值),发现石墨烯/硅异质结探测器的相对信噪比(1.2×10¹⁸)优于纯硅探测器的(6.3×10¹⁷)。此外,探究了石墨烯条带尺寸对于光电响应及噪声的影响,发现随着石墨烯条带长度的增加,探测器的光电响应与噪声呈下降趋势;随着石墨烯条带宽度的增加,探测器的光电响应与噪声呈上升趋势。进一步比较了不同石墨烯条带长宽比探测器的净光电流与相对信噪比,发现净光电流随着长宽比的增大而减小,而相对信噪比随着长宽比的增大而增加。此外,通过沉积Al₂O₃对探测器的噪声进行了抑制。最后,利用栅压调制...     

基于碳管/石墨烯/GaAs双异质结自驱动的近红外光电探测器

基于单壁碳纳米管(SWCNT)/单层石墨烯/GaAs双异质结结构构筑了自驱动近红外光电探测器,利用GaAs优异的光电特性和石墨烯的高载流子迁移率特点,该光电探测器在无偏压情况下光电响应率可达393.8mA/W,比探测率达到6.48×1011 Jones,开关比为103。而且,利用半导体性SWCNT对近红外光子的高吸收特性以及SWCNT/石墨烯异质结对SWCNT产生光生载流子进行有效分离,使得该双异质结光电器件的光谱响应可拓展至1 064nm,突破了GaAs自身的响应极限860nm。     

石墨烯/硅基异质集成光电子器件

石墨烯/硅基异质集成的光子器件研究在近年来取得了巨大进展,因石墨烯所具有的诸多独特的物理性质如超高载流子迁移率、超高非线性系数等,石墨烯/硅基异质集成器件展现出了诸如超大带宽、超低功耗等优异性能。文章介绍了近年来报道的典型石墨烯/硅基异质集成器件,包括石墨烯/硅基电光调制器、石墨烯/硅基热光调制器和石墨烯/硅基光电探测器,简要阐述了其原理与性能,并对其未来的应用与发展做出了展望。     

金属氧化物异质结光电探测器研究进展

金属氧化物（metal oxide,MO）因其具有易于制备、高稳定性、对载流子的选择性传输等优点,被广泛应用于光电探测领域。MO材料具有较强的光吸收,但表面效应和缺陷态等问题导致了MO光电探测器响应速度低和暗电流较大的问题。异质结中的内建电场可以有效促进光生电子-空穴对的分离,从而提升器件响应速度和降低器件暗电流。因此,构建金属氧化物异质结光电探测器（heterojunction photodetectors,HPDs）,对于MO在光电子领域的进一步应用具有重要的意义。本文先介绍了MO的界面性质,然后围绕PN、PIN和同型异质结3种结构,对金属氧化物HPDs的工作机制进行了阐述。接着对响应波段在紫外-可见-近红外光区的、具有不同结构的MO/MO和MO/Si HPDs的性能参数进行了分析和比较,并讨论了金属氧化物HPDs的性能优化方法,最后对金属氧化物HPDs的发展进行了展望。     

基于石墨烯/铟砷量子点/砷化镓异质结新型光电探测器

研究了一种石墨烯/铟砷量子点/砷化镓界面形成的异质结探测器的暗电流特性以及光电响应性质.虽然石墨烯具有很高的电子迁移率,但受限于较低的光子吸收率,使其在光电探测领域的应用受到了限制.而半导体量子点具有量子效率高,光吸收能力强等独特优点.于是利用石墨烯-砷化铟量子点-砷化镓异质结结构制备了一种新型光电探测器.并对该探测器的响应率、I-V特性曲线、暗电流特性、探测率、开关比等关键性能进行了研究.其在637 nm入射光情况下的响应率、探测率以及开关比可分别达到为17. 0 m A/W、2. 3×10~(10)cm Hz~(1/2)W~(-1)和1×10~3.而当入射光为近红外波段的940纳米时,响应率进一步增加到了207 m A/W.同时,还证实了该器件的暗电流、肖特基势垒高度和理想因子对温度的都具有较高的依赖性都较强.     

硅异质结和赝异质结双极器件研究进展

本文作者结合自己的工作，综述了硅异质结和赝异质结双极器件的研究进展，指出ＧｅＳｉ ＨＢＴ将成为双极结构的主流技术，硅赝异质结器件也将在低温应用等方面显示出优势。     

硅基异质结光电探测器用材料的应用研究进展

综述当前ＧｅＳｉ／Ｓｉ、ＧａＡｓ／ＧａＡｌＡｓ、ＨｇＣｄＴｅ、ＰｔＳｉ和ＧａＮ光电探测器用材料的工作原理、特点、研究现状及发展趋势。以新型薄膜外延技术－分子束外延制备的ＧｅＳｉ／Ｓｉ等人工超晶格材料倍受关注,硅基异质子阱材料成为新一代光电探测材料的发展方向。     

Si电光调制器与GeSi／Si异质结探测器的集成

提出了一种调制器与探测器集成的方案。它是在＜１００＞ｎ＾＋－Ｓｉ衬底上用外延、两次扩散等常规工艺先制作Ｓｉ脊表波导光调制器，接着在调制器光输出端的波导上用分子束外延和反应离子刻蚀制作ｐ－Ｇｅ０．６Ｓｉ０．４／ｐ－Ｓｉ探测器。     

基于石墨烯纳米条带阵列的光电探测器模型

提出了一种基于石墨烯纳米条带阵列的光电探测器(GNR-PD)结构,讨论了器件的解析模型.基于二维泊松方程,在弱非局域近似条件下建立了GNR-PD的器件模型,推导了其I-V特性和光响应特性.结果表明,GNR-PD具有极高量子效率和光电增益,可以获得高达150 A/W以上的光响应度.     

Amorphous Silicon 16—bit Array Photodetector^①

An amorphous silicon 16-bit array photodetector with the a-SiC/a -Si heterojunction diode is presented. The fabrication processes of the device were studied systematically. By the optimum of the diode structure and the preparation procedures, the diode with Id< 10 -12 A/mm2 and photocurrent Ip^0.35 A/W has been obtained at the wavelength of 632 nm.     

Amorphous Silicon 16—bit Array Photodetector

Abstract: An amorphous silicon 16 - bit array photodetector with the a - SiC/a -Si heterojunction diode is presented. The fabrication processes of the device were studied systematically. By the optimum of the diode structure and the preparation procedures, the diode with Id< 10 -12 A/mm2 and photocurrent Ip^0.35 A/W has been obtained at the wavelength of 632 nm.     

High-Performance Near-Infrared Photodetectors Based on Surface-Doped InSe

2D InSe is one of the semimetal chalcogenides that has been recently given attention thanks to its excellent electrical properties, such as high mobility near 1000 cm² V⁻¹ s⁻¹ and moderate band gap of ≈1.26 eV suitable for IR detection. Here, high-performance visible to near-infrared (470–980 nm wavelength (λ)) photodetectors using surface-doped InSe as a channel and few-layer graphenes (FLG) as electrodes are reported, where the InSe top region is relatively p-doped using AuCl₃. The surface-doped InSe photodetectors show outstanding performance, achieving a photoresponsivity (R) of ≈19 300 A W⁻¹ and a detectivity (D*) of ≈3 × 10¹³ Jones at λ = 470 nm, and R of ≈7870 A W⁻¹ and D* of ≈1.5 × 10¹³ Jones at λ = 980 nm, superior to previously reported 2D material-based IR photodetectors operating without an applied gate bias. Surface doping using AuCl₃ renders a band bending at the junction between the InSe surface and the top FLG contact, which facilitates electron-hole pair separation and immediate photodetection. Multiple doped or undoped InSe photodetectors with different device structures are investigated, providing insight into the photodetection mechanism and optimizing performance. Encapsulation with hexagonal boron nitride dielectric also allows for 3-month stability.     

An Interface Engineered Multicolor Photodetector Based on n‐Si(111)/TiO2 Nanorod Array Heterojunction

A multicolor photodetector based on the heterojunction of n‐Si(111)/TiO₂ nanorod arrays responding to both ultraviolet (UV) and visible light is developed by utilizing interface engineering. The photodetector is fabricated via a consecutive process including chemical etching, magnetron sputtering, hydrothermal growth, and assembling. Under a small reverse bias (from 0 to ≈?2 V), only the photogenerated electrons in TiO₂ are possible to tunnel through the low barrier of ΔE_C, and the device only responses to UV light; as the reverse bias increases, the photogenerated holes in Si also begin to tunnel through the high barrier of ΔE_V. As a result, the device is demonstrated to have the capacity to detect both UV and visible lights, which is useful in the fields of rapid detection and multicolor imaging. It has been also observed that the crystal orientation of Si affects the characteristics of bias‐controlled spectral response of the n‐Si/TiO₂ heterojunctions.     

聚合物半导体PAn/Si异质结(英文)

The P type semiconducting polymer polianiline (PAn) films have been prepared on n and p type si chips by photo-electrochemical and electrochemical polymerization, and so the semiconducting polymer PAn/silicon heterojunctions have been fabricated. The I dark-V and I photo-V curves, as well as C-V curves at different frequencies have been measured and the energy band diagrams, the distributions of impurity density and the interface states have been analyzed for the heterojunctions. It is demonstrated experimentally that the n-p Si-PAn heterojunction possesses fine photoelectrical characteristics.     

基于顶栅调控界面的石墨烯高增益光电探测器

利用Silvaco TCAD软件对石墨烯作为新一代二维半导体材料具有的光学电学特性进行仿真建模,计算得到了不同掺杂类型石墨烯的转移特性曲线.进而对基于顶栅调控的石墨烯-硅光电导型光电探测器进行了建模与仿真,发现顶栅电压可以通过调控石墨烯载流子类型及浓度来改变石墨烯与硅异质结的内建电势,实现提高增益的目的.基于此制备了栅控石墨烯-硅光电探测器并测得与仿真结果一致的规律,实验中该器件在1 550 nm波段展现出良好的光电性能.研究结果对红外光电探测器的性能优化具有指导意义.     

Flexible and Self‐Powered Lateral Photodetector Based on Inorganic Perovskite CsPbI3–CsPbBr3 Heterojunction Nanowire Array

Self‐powered perovskite photodetectors mainly adopt the vertical heterojunction structure composed of active layer, electron–hole transfer layers, and electrodes, which results in the loss of incident light and interfacial accumulation of defects. To address these issues, a self‐powered lateral photodetector based on CsPbI₃–CsPbBr₃ heterojunction nanowire arrays is designed on both a rigid glass and a flexible polyethylene naphthalate substrate using an in situ conversion and mask‐assisted electrode fabrication method. Through adding the polyvinyl pyrrolidone and optimizing the concentration of precursors under the pressure‐assisted moulding process, both the crystallinity and stability of perovskite nanowire array are improved. The nanowire array–based lateral device shows a high responsivity of 125 mA W^?1 and a fast rise and decay time of 0.7 and 0.8 ms under a self‐powered operation condition. This work provides a new strategy to fabricate perovskite heterojunction nanoarrays towards self‐powered photodetection.     

基于湿法腐蚀工艺的高性能黑硅光电探测器

采用基于硝酸/氢氟酸/磷酸/硫酸混合液的湿法腐蚀工艺,实现了高吸收效率的黑硅结构的制备与工艺集成,获得了具有近红外响应增强效果的黑硅PIN光电探测器,并与未集成黑硅的PIN光电探测器的性能参数进行了对比测试.测试结果显示,黑硅光电探测器在1 060 nm波长下的响应度达到0.69 A/W(量子效率80.7％),较未集成黑硅的器件提高了 116％;黑硅探测器暗电流小于8 nA,响应时间小于8 ns,电容小于9 pF,与未集成黑硅的器件相当.得益于工艺兼容性,所采用的黑硅技术具有广泛应用于硅基近红外PIN,APD,SPAD,SPM等光电探测器的潜力,可显著提高器件的响应率、量子效率、响应速度、击穿电压温度系数等性能.