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1.
为提升隧穿氧化层钝化接触(TOPCon)电池光电转换效率,本文通过高温扩散在n型TOPCon电池正面制作p型隧穿氧化层钝化接触结构,提升发射极钝化性能,减少正面金属复合。本文研究了不同沉积时间、推进温度、推进时间等工艺参数对实验样品钝化性能及掺杂曲线的影响。实验结果表明,当沉积时间为1 500 s,推进温度为920℃,推进时间为20 min时,掺硼多晶硅层可获得较优的钝化性能及掺杂浓度,其中样品多晶硅层硼掺杂浓度达到1.40×1020 cm-3,隐开路电压(iVoc)大于720.0 mV。依据该参数制备的TOPCon电池光电转换效率可达23.89%,对应的短路电流密度为39.36 mA/cm2,开路电压(Voc)达到726.4 mV,填充因子(FF)为83.54%。  相似文献   

2.
Ga2O3是一种新兴的宽带隙半导体,在电力和射频电子系统中具有潜在的应用前景。前期研究以β-Ga2O3为主,并且已经对β-(AlxGa1-x)2O3/Ga2O3异质结构中的二维电子气(2DEG)进行了理论计算,本文主要研究ε-(AlxGa1-x)2O3作为势垒层对ε-(AlxGa1-x)2O3/ε-Ga2O3异质结电子输运性质的影响,首先介绍了ε-(AlxGa1-x)2O3/ε-Ga2O3异质结的结构和性质,分析计算了由于ε-(AlxGa1-x)2O3/ε-Ga2O3异质结的自发极化和压电极化所产生的极化面电荷密度,以及极化对2DEG浓度产生的影响,接着分析了在不同Al摩尔组分下,ε-(AlxGa1-x)2O3势垒层厚度与合金无序散射、界面粗糙度散射和极性光学声子散射之间的关系。最后通过计算得出结论:界面粗糙度散射和极性光学声子散射对ε-(AlxGa1-x)2O3/ε-Ga2O3异质结的电子输运性质有重要影响,合金无序散射对异质结的输运性质影响较小;2DEG浓度、合金无序散射、界面粗糙度散射和极性光学声子散射的电子迁移率强弱由ε-(AlxGa1-x)2O3势垒层的厚度和Al摩尔组分共同决定。  相似文献   

3.
以纳米η-Al2O3粉和工业铬绿为原料,以摩尔比1:1配比制备Al2O3-Cr2O3固溶体,以TiO2为烧结助剂,在还原气氛下经1400 ℃、1500 ℃和1600 ℃固相烧结.研究了TiO2的加入对纳米η-Al2O3制备Al2O3-Cr2O3固溶体的致密度、线收缩率、相组成、晶胞参数、互扩散程度和微观结构的影响.结果表明:TiO2的加入能促进Al2O3-Cr2O3固溶体的致密化;当温度为1600 ℃,TiO2的添加量为2wt;时,试样的体积密度最大为4.57 g·cm-3,线收缩率为19.8;;TiO2的加入能使Al2O3-Cr2O3固溶体中Al3+和Cr3+的互扩散程度增加;微观结构表明,TiO2的加入能使Al2O3-Cr2O3固溶体晶粒之间结合更紧密,实验温度范围内,随着TiO2添加量的增加晶粒从沿晶断裂向穿晶断裂转变,只在晶间和晶内存在极少量气孔,当温度为1600 ℃,TiO2的添加量为2wt;时,晶粒大小较均匀,平均晶粒尺寸约10μm.  相似文献   

4.
采用光学浮区法制备了不同Cr3+掺杂浓度的Cr∶Al2O3晶体,并根据需要制备了不同直径(2 mm至13 mm)的长度大于100 mm的圆柱状Cr∶Al2O3晶体。测量了在制备Cr∶Al2O3晶体不同阶段所获得的粉末料棒、陶瓷料棒和晶体的密度,分别为0.928、2.230和4.051 g/cm3。XRD图谱显示,Cr∶Al2O3晶体为α-Al2O3相。透射光谱表明,Cr∶Al2O3晶体可见光非特征吸收波段透过率大于80%。吸收光谱和光致激发光谱(监测669 nm光)均显示,Cr∶Al2O3晶体在418及559 nm处有较强吸收带,分别对应Cr3+4A24  相似文献   

5.
稀土共晶闪烁体是通过定向凝固晶体生长技术,将具有不同折射率的两相制备成具有射线探测功能的共晶材料,其中含有激活离子的闪烁体相的折射率高于基质相。在高能射线辐照下,闪烁体相将入射高能射线转换成荧光,然后,荧光在闪烁体相和基底相的界面以全反射的形式实现定向输出,从而有效提高辐射探测成像的空间分辨率。本工作采用微下降法成功生长得到φ3 mm×117.0 mm 的1.0%(原子数分数)Ce∶GdLu2Al5O12/Al2O3闪烁共晶样品。通过切割抛光加工得到φ3 mm×2.0 mm的共晶薄片,并将该共晶薄片进行微观结构、能谱分析和荧光性能等表征和测试,结果表明所得到的共晶样品由Ce∶GdLuAG和Al2O3两晶相构成,微观结构呈现出“中国结”结构,并在生长方向呈现出一定的有序排列。荧光光谱测试表明该共晶材料存在Gd3+-Ce3+间的能量传递,具有典型的Ce3+辐射跃迁,其中双宽峰发射峰最强位于560 nm。此外,根据生长速率对共晶样品发射峰强、峰位以及荧光寿命影响,优化出最佳下拉生长速率为4.0 mm/min。  相似文献   

6.
为提升n型叉指背接触(IBC)太阳电池的光电转换效率,采用丝网印刷硼浆和高温扩散的方式形成选择性发射极结构,研究了硼扩散和硼浆印刷工艺对电池发射极钝化性能和接触性能的影响。实验结果表明,在硼扩散沉积时间和退火时间一定的条件下,硼扩散通源(BBr3)流量为100 mL/min,沉积温度为830 ℃,退火温度为920 ℃时,发射极轻掺杂(p+)区域的隐开路电压达到710 mV,暗饱和电流密度为12.2 fA/cm2。发射极局部印刷硼浆湿重为220 mg时,经过高温硼扩散退火,重掺杂(p++)区域的隐开路电压保持在683 mV左右,该区域方块电阻仅46 Ω/□,金属接触电阻为2.3 mΩ·cm2. 采用该工艺方案制备的IBC电池最高光电转换效率达到24.40%,平均光电转换效率达到24.32%,相比现有IBC电池转换效率提升了0.28个百分点。  相似文献   

7.
复合氧化物界面性质与CO2加氢制甲醇反应的催化性能有着重要的关系。本文对比考察了物理共混法、浸渍法、传统共沉淀法和微流控连续共沉淀法对Al2O3-CeO2复合氧化物界面性质和催化性能的影响。浸渍作用尽管使Al2O3/CeO2界面产生了一定的结构性质调变,但贫瘠的氧空位缺陷导致催化反应效率低。共沉淀样品中固溶结构的存在增强了Al2O3/CeO2界面的相互作用,增大了电子结合能,形成的大量氧空位缺陷有利于CO2活化转化。而微流控连续共沉淀法合成样品因具有更小的晶粒尺寸、均匀的复合相结构和丰富的氧空位缺陷,表现出更为优异的催化性能。在原料气配比为V(H2)∶V(CO2)∶V(N2)=72∶24∶4,反应温度为320 ℃,反应压力为3 MPa,体积空速为9 000 mL·g-1·h-1的条件下,Al2O3-CeO2复合氧化物的CO2转化率、甲醇选择性及甲醇时空产率分别达到15.3%,86.4%和0.076 g·mL-1·h-1。  相似文献   

8.
本文以Al(OH)3、煅烧Al2O3和纳米Al2O3为铝源,在KCl和LiCl的混合熔盐介质中,800~1 200 ℃温度范围内保温3 h合成超细ZnAl2O4粉体。采用XRD、SEM、激光粒度仪和比表面分析仪等重点分析了铝源种类对ZnAl2O4粉体合成温度、产物物相组成以及显微形貌的影响。在此基础上探讨了反应温度、熔盐与原料的质量比(Ws/Wr)对粉体合成的影响。结果表明:铝源种类显著影响ZnAl2O4的开始形成温度和粉体性能,相比于煅烧Al2O3,以Al(OH)3和纳米Al2O3为铝源生成ZnAl2O4的速率较快,在900 ℃时即可合成出单相ZnAl2O4。以煅烧Al2O3粉为铝源,当Ws/Wr为3∶1时,在1 000 ℃合成ZnAl2O4粉体的分散性最佳,而温度过高易造成粉体团聚长大。适当的Ws/Wr有利于ZnAl2O4的生成,当Ws/Wr为4∶1时合成的ZnAl2O4粒径最小。ZnAl2O4粉体均在一定程度保持着初始铝源的尺寸和形貌,表明熔盐法合成ZnAl2O4的机理主要遵循着“模板合成机理”。  相似文献   

9.
为了研究载流子选择性接触结构在N型晶硅电池钝化特性,本文设计了专门的材料结构.分析对比了不同掺杂浓度分布的材料结构在退火后、沉积SiNx:H薄膜后及烧结后隐开路电压值的变化,并对其钝化机理进行了分析.研究结果表明隐开路电压值对掺杂浓度分布非常敏感.随着掺杂浓度分布进入硅基体的"穿透"深度增加,相对应地退火后、SiNx:H薄膜沉积后及烧结后隐开路电压值均呈现先增加后减小的趋势,且样片沉积SiNx:H薄膜后隐开路电压的增加幅度也逐渐减小,而样片烧结后隐开路电压值又出现不同幅度的下降,且隐开路电压值的下降幅度逐渐减小.通过适当的掺杂工艺,可以使得烧结后的隐开路电压均值达到738 mV.  相似文献   

10.
BixOyBrz光催化剂在有机药物废水处理领域有着非常广阔的潜在应用价值,但因光生电子和空穴的快速复合而表现出较低的光催化效率,进而限制了其应用范围。通过简易的水解-焙烧法原位制得一种新型的Bi3O4Br/Bi12O17Br2复合光催化剂,并以磺胺甲噁唑(SMX)为模拟药物污染物进行了光催化性能测试,对所制催化剂进行了X射线衍射(XRD)、X射线光电子能谱(XPS)、扫描电子显微镜(SEM)、紫外可见漫反射光谱(UV-Vis DRS)、电化学阻抗(EIS)、光致发光光谱(PL)等表征。结果表明所制备的Bi3O4Br/Bi12O17Br2复合光催化剂具有较强的光生载流子分离率、较低的界面电荷转移电阻,进而展示出优异的光催化降解SMX性能,在模拟太阳光下照射30 min,SMX降解率达到87%,相较于纯的Bi3O4Br和Bi12O17Br2催化剂,降解率分别提升了30%和24%。最后基于自由基捕获实验和催化剂能带结构分析了所制催化剂的降解机理。  相似文献   

11.
Glasses of compositions 5ZrO2·5SiO2(ZS), 5ZrO2·Al2O3·4SiO2(ZAS) and 5 5ZrO2·0.5Al2O3·0.5Na2O·4SiO2(ZANS) were prepared by the sol-gel process from metal alkoxides and sintered to make glass-ceramics. Tetragonal ZrO2 was precipitated by heat treatment at 900 to 1300°C. The activation energy for tetragonal ZrO2 crystal growth was extremely high in Al2O3 containing glasses. ZAS and ZS were sintered to the near theoretical densities above 1200°C, at which the predominant phase was tetragonal ZrO2. On the other hand, for ZANS, high densification was not attained owing to the large pores enclosed by the glass phase. Strength and fracture toughness increased with the densification and the crystal growth of tetragonal ZrO2, reaching 450 MPa and 9 MN/m1.5, respectively.  相似文献   

12.
Raman spectra of ternary sodium aluminosphosphate glasses indicate that for glasses with Al2O3/P2O5<0.63, the glass network is mainly built up of (PO3)nn- chains and rings or different kinds of phosphate groups and AlO4 tetrahedra; for glasses with Al2O3/P2O5>0.63, the glass network is mainly built up of AlPO4 groups.  相似文献   

13.
The effect of alumina on the phase separation and the crystallization of the glasses of composition (mol%) 18ZnO·30B2O3·52SiO2 and O-40 Al2O3 was studied using an electron microscope and IR spectroscopy. The main crystalline phase appears in the microphase for which the compositions are not nearer to the crystal stoichiometry than the mean. The addition of Al2O3 suppresses the immiscibility but enhances the crystallizability.  相似文献   

14.
We investigated the dependence of the Y2O3 film growth on Si surface at initial growth stage. The reflection high-energy electron diffraction, X-ray scattering, and atomic force microscopy showed that the film crystallinity and morphology strongly depended on whether Si surface contained O or not. In particular, the films grown on oxidized surfaces revealed significant improvement in crystallinity and surface smoothness. A well-ordered atomic structure of Y2O3 film was formed on 1.5 nm thick SiO2 layer with the surface and interfacial roughness markedly enhanced, compared with the film grown on the clean Si surfaces. The epitaxial film on the oxidized Si surface exhibited extremely small mosaic structures at interface, while the film on the clean Si surface displayed an island-like growth with large mosaic structures. The nucleation sites for Y2O3 were provided by the reaction between SiO2 and Y at the initial growth stage. The SiO2 layer known to hinder crystal growth is found to enhance the nucleation of Y2O3, and provides a stable buffer layer against the silicide formation. Thus, the formation of the initial SiO2 layer is the key to the high-quality epitaxial growth of Y2O3 on Si.  相似文献   

15.
The surface morphology of Na2O–B2O3–Al2O3–SiO2 vitrified bond with and without calcium oxide was studied by soaking vitrified bonded microcrystalline alumina composites in water. The content of water introduced to the vitrified bond was determined by thermal gravity analysis, and the effects of water and calcium on the phase separation and nucleation of the vitrified bond were investigated using scanning electron microscope and energy-dispersive X-ray spectrometer. Soaked in water for 72 h, the Na2O–B2O3–Al2O3–SiO2 vitrified bond presented a porous surface, and its bending strength declined with increasing sintering temperature. However, the Na2O–CaO–B2O3–Al2O3–SiO2 vitrified bond was more durable against aqueous coolant even needle-shape crystals were found clustered on the surface of the vitrified bond. The crystals were enriched with aluminosilicate tested by energy-dispersive X-ray spectrums. The appearance of crystals lessened the dissolution of the vitrified bond and made the bending strength increase in the sintering temperature region between 870 °C and 930 °C.  相似文献   

16.
The colorless and transparent glasses in the Al2O3---B2O3---SiO3 system with high B2O3 and SiO2 content were prepared from gels at low temperature. Their IR spectra not only revealed the evolution of the gel to glass conversion, but also showed that the formation of mixed bonds in the glasses obtained did not show any effect due to the B2O3 content. The accuracy of the glass composition is dependent upon the SiO2/B2O3 molar ratio. The higher the ratio, the less the deviation of the analyzed compositions of the resulting glasses from their original calculated values. It is obvious that the higher the ratio, the lower the thermal expansion coefficient and the higher the transformation temperature of the glass, and the temperature at which the thermal contraction reaches an equilibrium is higher.  相似文献   

17.
Binary glasses containing no modifying oxides, such as SiO2---GeO2, SiO2---B2O3, SiO2---P2O5, GeO2---B2O3, Al2O3---P2O5 and ternary glasses SiO2---GeO2---P2O5, Al2O3---B2O3---P2O5, B2O3---SiO2---P2O5, Al2O3---ZrO2---P2O5 have been prepared by melting and CVD methods. The Raman spectra have also been measured. Structural characteristics of SiO2, GeO2, B2O3, P2O5 in different glass systems are analysed. There exist coordination number changes in B2O3- and GeO2-containing glasses and linkage changes between tetrahedra (SiO4) and (PO4) in SiO2 and P2O5 containing glasses. The structure of Al2O3 containing glasses is homogeneous and the structure of B2O3 containing glasses is inhomogeneous. These experimental results are in coincidence with the X-ray small angle scattering analysis.  相似文献   

18.
The 11B, 27Al, 29Si and 31P magic angle spinning (MAS) NMR spectra of MO–P2O5, MO–SiO2–P2O5 and MO(M2O)–SiO2–Al2O3–B2O3 (M=Mg, Ca, Sr and Ba, M=Na) glasses were examined. In binary MO–P2O5 (M=Ca and Mg) glasses, the distributions of the phosphate sites, P(Qn), can be expressed by a theoretical prediction that P2O5 reacts quantitatively with MO. In the ternary 0.30MO–0.05SiO2–0.65P2O5 glasses, the 6-coordinated silicon sites were detected, whose population increases in the order of MgOxCaO–0.05SiO2–(0.95−x)P2O5 glasses, its population increases with an increase in f (=([P2O5]−[MO]−[B2O3]−[Na2O])/[SiO2]) and has maximum at f=9. The signal due to the 5-coordinated silicon atoms is also observed when x is smaller than 0.45. When three network-forming oxides such as SiO2, Al2O3 and B2O3 coexist, Al2O3 reacts preferably with MO. The populations of 4-coordinated boron atoms, N4, are expressed well with r/(1−r), where r=([Na2O]−[Al2O3])/([Na2O]−[Al2O3]+[B2O3]). The correlation of the Raman signal at 1210 and 1350 cm−1 with the NMR signal of Si(Q6) at −215 ppm is also seen.  相似文献   

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